MJD44H11 MJD45H11 ® COMPLEMENTARY SILICON PNP TRANSISTORS ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIER ■ DESCRIPTION The MJD44H11 is a Silicon Multiepitaxial Planar NPN transistor mounted in DPAK plastic package. It is inteded for various switching and general purpose applications. The complementary PNP type is MJD45H11 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN MJD44H11 PNP MJD45H11 Unit V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 8 A IC 80 V I CM Collector Peak Current 16 A P tot Total Dissipation at T c ≤ 25 o C 20 W T stg Storage Temperature Tj Max. Operating Junction Temperature -55 to 150 o C 150 o C For PNP types the values are intented negative. May 2003 1/5 MJD44H11 / MJD45H11 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 6.25 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter V CEO(sus) ∗ Collector-Emitter Sustaining Voltage Test Conditions I C = 30 mA Min. Typ. Max. 80 Unit V I CES Collector Cut-off Current V CB = rated V CEO V BE = 0 10 µA I EBO Emitter Cut-off Current V EB = 5V 50 µA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 8 A I B = 0.4 A 1 V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 8 A I B = 0.8 A 1.5 V DC Current Gain IC = 2 A IC = 4 A V CE = 1 V V CE = 1 V h FE ∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % ∗ For PNP types the values are intented negative. Safe Operating Area 2/5 Derating Curves 60 40 MJD44H11 / MJD45H11 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) 3/5 MJD44H11 / MJD45H11 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 4/5 MJD44H11 / MJD45H11 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5