Product Folder Sample & Buy Support & Community Tools & Software Technical Documents DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 DS125BR800 Low-Power 12.5-Gbps 8-Channel Repeater With Input Equalization and Output De-Emphasis 1 Features 3 Description • The DS125BR800 is an extremely low-power highperformance multiprotocol repeater/redriver designed to support eight channels of PCIe Gen-3/2/1, 10GKR, and other high-speed interface serial protocols up to 12.5 Gbps. The continuous time linear equalizer (CTLE) of the receiver provides a boost of up to +30 dB at 6.25 GHz (12.5 Gbps) in each of its eight channels and can open an input eye that is completely closed due to inter symbol interference (ISI) induced by interconnect medium such as 30in+ backplane traces or 8m+ copper cables, hence enabling host controllers to ensure an error-free endto-end link. The transmitter provides a de-emphasis boost of up to –12 dB and output voltage amplitude control from 700 mV to 1300 mV to allow maximum flexibility in the physical placement within the interconnect channel. 1 • • • • • • • • • Comprehensive Family, Proven System InterOperability – DS125BR111: One-Lane Repeater – DS125BR401: Four-Lane Repeater – DS125BR800: Eight-Channel Repeater – DS125MB203: Two-Port 2:1/1:2 Mux/Switch – DS125DF410: Four-Channel Retimer With CDR Low 65-mW/Channel (Typ) Power Consumption, With Option to Power Down Unused Channels "Non-Limiting" Output for PCIe and 10G-KR Link Training Support Advanced Signal Conditioning Features – Receive Equalization up to 30 dB at 6.25 GHz – Transmit De-emphasis up to –12 dB – Transmit Output Voltage Control: 700 mV to 1300 mV Programmable Via Pin Selection, EEPROM, or SMBus Interface Single Supply Voltage: 2.5 V or 3.3 V (Selectable) −40°C to 85°C Operating Temperature Range 3-kV HBM ESD Rating Flow-Thru Pinout: 54-Pin WQFN (10-mm × 5.5mm, 0.5-mm Pitch) Supported Protocols – sRIO, Infiniband, Interlaken, CPRI, OBSAI – Other Proprietary Interface up to 12.5 Gbps Device Information(1) PART NUMBER DS125BR800 PACKAGE BODY SIZE (NOM) WQFN (54) 10.00 mm × 5.50 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Typical Application 8 TX Connector ASIC or PCIe EP 8 RX DS125BR800 8 RX 2 Applications System Board Root Complex DS125BR800 Connector 8 • • SAS/SATA (up to 6 Gbps), Fibre Channel (up to 10GFC) PCIe Gen-3/2/1, 10G-KR, 10GbE, XAUI, RXAUI TX ard Bo ce Tra 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Description (Continued) ........................................ Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 6 7.1 7.2 7.3 7.4 7.5 7.6 Absolute Maximum Ratings ...................................... 6 ESD Ratings.............................................................. 6 Recommended Operating Conditions....................... 6 Thermal Information .................................................. 6 Electrical Characteristics........................................... 7 Electrical Characteristics: Serial Management Bus Interface .................................................................... 9 7.7 Timing Requirements ................................................ 9 7.8 Typical Characteristics ............................................ 11 8 Detailed Description ............................................ 12 8.1 Overview ................................................................. 12 8.2 Functional Block Diagram ....................................... 12 8.3 8.4 8.5 8.6 9 Feature Description................................................. Device Functional Modes........................................ Programming........................................................... Register Maps ......................................................... 12 15 15 25 Application and Implementation ........................ 44 9.1 Application Information............................................ 44 9.2 Typical Application ................................................. 44 10 Power Supply Recommendations ..................... 48 10.1 3.3-V or 2.5-V Supply Mode Operation................. 48 10.2 Power Supply Bypassing ...................................... 49 11 Layout................................................................... 49 11.1 Layout Guidelines ................................................. 49 11.2 Layout Example .................................................... 50 12 Device and Documentation Support ................. 51 12.1 12.2 12.3 12.4 Documentation Support ........................................ Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 51 51 51 51 13 Mechanical, Packaging, and Orderable Information ........................................................... 51 4 Revision History Changes from Revision D (March 2013) to Revision E • 2 Page Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 5 Description (Continued) When operating in 10G-KR and PCIe Gen-3 mode, the DS125BR800 transparently allows the host controller and the end point to optimize the full link and negotiate transmit equalizer coefficients. This seamless management of the link training protocol ensures system-level interoperability with minimum latency. With a low power consumption of 65 mW per channel (typ) and option to turn-off unused channels, the DS125BR800 enables energy efficient system design. A single supply of 3.3 V or 2.5 V is required to power the device. The programmable settings can be applied easily via pins, software (SMBus or I2C) or loaded through an external EEPROM. When operating in the EEPROM mode, the configuration information is automatically loaded on power up, which eliminates the need for an external microprocessor or software driver. 6 Pin Configuration and Functions PWDN VDD DEMA1/SCL DEMA0/SDA ENSMB EQB1/AD2 EQB0/AD3 51 50 49 48 47 46 DEMB0/AD1 53 52 DEMB1/AD0 54 DS125BR800 54-Pin Top View SMBUS AND CONTROL INB_0+ 1 45 OUTB_0+ INB_0- 2 44 OUTB_0- INB_1+ 3 43 OUTB_1+ INB_1- 4 42 OUTB_1- INB_2+ 5 41 VDD INB_2- 6 40 OUTB_2+ INB_3+ 7 39 OUTB_2- INB_3- 8 38 OUTB_3+ DAP = GND OUTA_1- INA_2+ 15 31 OUTA_2+ INA_2- 16 30 OUTA_2- INA_3+ 17 29 OUTA_3+ INA_3- 18 28 OUTA_3- 27 32 ALL_DONE 14 26 VDD SD_TH/READ_EN INA_1- OUTA_1+ 25 OUTA_0- 33 VDD_SEL 34 13 24 12 VIN INA_1+ 23 OUTA_0+ RESERVED 35 22 11 RXDET INA_0- 21 VDD 20 INA_0+ EQA0 OUTB_3- 36 MODE 37 19 9 10 EQA1 VDD Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 3 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Pin Functions (1) PIN NAME TYPE NO. DESCRIPTION DIFFERENTIAL HIGH SPEED I/O'S INB_0+, INB_0-, INB_1+, INB_1-, INB_2+, INB_2,INB_3+, INB_3-, 1, 2, 3, 4, 5, 6, 7, 8, I Inverting and non-inverting CML differential inputs to the equalizer. Onchip 50 Ω termination resistor connects INB_n+ to VDD and INB_n- to VDD when enabled. AC coupling required on high-speed I/O INA_0+, INA_0-, INA_1+, INA_1-, INA_2+, INA_2,INA_3+, INA_3- 10, 11, 12, 13, 15, 16, 17, 18 I Inverting and non-inverting CML differential inputs to the equalizer. Onchip 50 Ω termination resistor connects INA_n+ to VDD and INA_n- to VDD when enabled. AC coupling required on high-speed I/O OUTB_0+, OUTB_1+, OUTB_2+, OUTB_3+, OUTB_0-, OUTB_1-, OUTB_2-, OUTB_3-, 45, 44, 43, 42, 40, 39, 38, 37 O Inverting and non-inverting 50 Ω driver outputs with de-emphasis. Compatible with AC coupled CML inputs. AC coupling required on high-speed I/O OUTA_0+, OUTA_1+, OUTA_2+, OUTA_3+, OUTA_0-, OUTA_1-, OUTA_2-, OUTA_3- 35, 34, 33, 32, 31, 30, 29, 28 O Inverting and non-inverting 50 Ω driver outputs with de-emphasis. Compatible with AC coupled CML inputs. AC coupling required on high-speed I/O I, 4-LEVEL, LVCMOS System Management Bus (SMBus) Enable pin Tie 1 kΩ to VDD = Register Access SMBus Slave Mode FLOAT = Read External EEPROM (Master SMBUS Mode) Tie 1 kΩ to GND = Pin Mode CONTROL PINS — SHARED (LVCMOS) ENSMB 48 ENSMB = 1 (SMBUS MODE) SCL 50 I, 2-LEVEL, LVCMOS, O, OPEN Drain Clock output when loading EEPROM configuration, reverting to SMBus clock input when EEPROM load is complete (ALL_DONE = 0). External 2 kΩ to 5 kΩ pull-up resistor to VDD (2.5-V Mode) or VIN (3.3-V Mode) recommended as per SMBus interface standards. SDA 49 I, 2-LEVEL, LVCMOS, O, OPEN Drain In both SMBus Modes, this pin is the SMBus data I/O. Data input or open drain output. External 2 kΩ to 5 kΩ pull-up resistor to VDD (2.5-V Mode) or VIN (3.3-V Mode) recommended as per SMBus interface standards. AD0-AD3 54, 53, 47, 46 I, 4-LEVEL, LVCMOS ENSMB Master or Slave mode SMBus Slave Address Inputs. In SMBus mode, these pins are the user set SMBus slave address inputs. There are 16 addresses supported by these pins. Pins must be tied LOW or HIGH when used to define the device SMBus address. READ_EN 26 I, 2-LEVEL, LVCMOS When using an External EEPROM, a transition from high to low starts the load from the external EEPROM EQA0, EQA1, EQB0, EQB1 20, 19, 46, 47 I, 4-LEVEL, LVCMOS EQA[1:0] and EQB[1:0] control the level of equalization on the input pins. The pins are active only when ENSMB is de-asserted (low). The 8 channels are organized into two banks. Bank A is controlled with the EQA[1:0] pins and bank B is controlled with the EQB[1:0] pins. When ENSMB goes high the SMBus registers provide independent control of each channel. The EQB[1:0] pins are converted to SMBUS AD2/AD3 inputs. See Table 2. DEMA0, DEMA1, DEMB0, DEMB1 49, 50, 53, 54 I, 4-LEVEL, LVCMOS DEMA[1:0] and DEMB[1:0] control the level of de-emphasis of the output driver. The pins are only active when ENSMB is de-asserted (low). The 8 channels are organized into two banks. Bank A is controlled with the DEMA[1:0] pins and bank B is controlled with the DEMB[1:0] pins. When ENSMB goes high the SMBus registers provide independent control of each channel. The DEMA[1:0] pins are converted to SMBUS SCL/SDA and DEMB[1:0] pins are converted to AD0, AD1 inputs. See Table 3. ENSMB = 0 (PIN MODE) (1) 4 LVCMOS inputs without the FLOAT conditions must be driven to a logic low or high at all times or operation is not guaranteed. Input edge rate for LVCMOS/FLOAT inputs must be faster than 50 ns from 10–90%. For 3.3-V Mode operation, VIN pin = 3.3 V and the VDD for the 4-level input is 3.3 V. For 2.5-V Mode operation, VDD pin = 2.5 V and the VDD for the 4-level input is 2.5 V. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Pin Functions(1) (continued) PIN NAME TYPE NO. DESCRIPTION MODE 21 I, 4-LEVEL, LVCMOS MODE control pin selects operating modes. Tie 1 kΩ to GND = PCIe Gen-1 or PCIe Gen-2 and SAS/SATA (up to 6 Gbps) FLOAT = AUTO Rate Select (for PCIe) Tie 20 kΩ to GND = PCIe Gen-3 without De-emphasis Tie 1 kΩ to VDD = PCIe Gen-3 with De-emphasis See Table 6 SD_TH 26 I, 4-LEVEL, LVCMOS Controls the internal Signal Detect Threshold. For datarates above 8 Gbps the Signal Detect function should be disabled to avoid potential for intermittent data loss. See Table 5 for additional information. CONTROL PINS — BOTH PIN AND SMBus MODES (LVCMOS) RXDET 22 I, 4-LEVEL, LVCMOS The RXDET pin controls the receiver detect function. Depending on the input level, a 50 Ω or >50 kΩ termination to the power rail is enabled. See Table 4. RESERVED 23 I, FLOAT Float (leave pin open) = Normal Operation VDD_SEL 25 I, LVCMOS Controls the internal regulator FLOAT = 2.5-V mode Tie GND = 3.3-V mode PWDN 52 I, LVCMOS Tie High = Low power - power down Tie GND = Normal Operation See Table 4. OUTPUTS ALL_DONE 27 O, LVCMOS Valid Register Load Status Output HIGH = External EEPROM load failed LOW = External EEPROM load passed VIN 24 Power In 3.3-V mode, feed 3.3 V to VIN In 2.5-V mode, leave floating VDD 9, 14, 36, 41, 51 Power Power supply pins CML/analog 2.5-V Mode, connect to 2.5-V supply 3.3-V mode, connect 0.1-µF cap to each VDD pin See Power Supply Recommendations for proper power supply decoupling. GND DAP Power Ground pad (DAP - die attach pad) POWER Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 5 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings (1) (2) MIN MAX UNIT Supply Voltage (VDD - 2.5-V mode) –0.5 2.75 V Supply Voltage (VIN - 3.3-V mode) –0.5 4.0 V LVCMOS Input/Output Voltage –0.5 4.0 V CML Input Voltage –0.5 VDD + 0.5 V CML Input Current –30 30 mA Junction Temperature 125 °C Lead Temperature Range Soldering (4 sec.) 260 °C 125 °C For soldering specifications: see product folder at SNOA549 Storage Temperature (1) (2) –40 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute Maximum Numbers are specified for a junction temperature range of –40°C to +125°C. Models are validated to Maximum Operating Voltages only. If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for availability and specifications. 7.2 ESD Ratings VALUE Electrostatic discharge V(ESD) (1) (2) Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±3000 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) ±1000 Machine model, STD - JESD22-A115-A ±200 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions MIN TYP MAX UNIT Supply voltage (2.5-V mode) 2.375 2.5 2.625 V Supply voltage (3.3-V mode) 3.0 3.3 3.6 V Ambient temperature –40 25 85 °C SMBus (SDA, SCL) 3.6 V Supply noise up to 50 MHz (1) 100 mVp-p (1) Allowed supply noise (mVp-p sine wave) under typical conditions. 7.4 Thermal Information DS125BR800 THERMAL METRIC (1) WQFN UNIT 54 PINS RθJA Junction-to-ambient thermal resistance 26.6 RθJC(top) Junction-to-case (top) thermal resistance 10.8 RθJB Junction-to-board thermal resistance 4.4 ψJT Junction-to-top characterization parameter 0.2 ψJB Junction-to-board characterization parameter 4.3 RθJC(bot) Junction-to-case (bottom) thermal resistance 1.5 (1) 6 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 7.5 Electrical Characteristics (1) (2) (3) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VDD = 2.5-V supply, EQ Enabled, VOD = 1.0 Vp-p, RXDET = 1, PWDN = 0 500 700 mW VIN = 3.3-V supply, EQ Enabled, VOD = 1.0 Vp-p, RXDET = 1, PWDN = 0 660 900 mW POWER PD Power Dissipation LVCMOS / LVTTL DC SPECIFICATIONS VIH25 High Level Input Voltage 2.5 V-Mode 2.0 VDD V VIH33 High Level Input Voltage 3.3 V-Mode 2.0 VIN V VIL Low Level Input Voltage 0 0.8 V VOH High Level Output Voltage (ALL_DONE pin) Ioh= –4 mA VOL Low Level Output Voltage (ALL_DONE pin) Iol= 4 mA IIH Input High Current (PWDN pin) VIN = 3.6 V, LVCMOS = 3.6 V 2.0 Input High Current with internal resistors (4-level input pin) IIL Input Low Current (PWDN pin) VIN = 3.6 V, LVCMOS = 0 V Input Low Current with internal resistors (4-level input pin) V 0.4 V –15 15 µA 20 150 µA –15 15 µA –160 –40 µA CML RECEIVER INPUTS (IN_n+, IN_n-) RLRX-DIFF RX Differential return loss 0.05 - 7.5 GHz –15 dB 7.5 - 15 GHz -5 dB –10 RLRX-CM RX Common mode return loss 0.05 - 5 GHz ZRX-DC RX DC common mode impedance Tested at VDD = 2.5 V 40 50 60 dB Ω ZRX-DIFF-DC RX DC differential mode impedance Tested at VDD = 2.5 V 80 100 120 Ω VRX-DIFF-DC Differential RX peak to peak voltage (VID) Tested at pins 1.2 V VRX-SIGNAL-DET- Signal detect assert level for active data signal DIFF-PP SD_TH = float, 0101 pattern at 8 Gbps 180 mVp-p VRX-IDLE-DET- SD_TH = float, 0101 pattern at 8 Gbps 110 mVp-p DIFF-PP Signal detect de-assert level for electrical idle HIGH SPEED OUTPUTS VTX-DIFF-PP Output Voltage Differential Swing Differential measurement with OUT_n+ and OUT_n-, terminated by 50 Ω to GND, AC-Coupled, VID = 1.0 Vp-p, DEM0 = 1, DEM1 = 0 (4) VTX-DE- TX de-emphasis ratio VOD = 1.0 Vp-p, DEM0 = 0, DEM1 = R PCIe Gen-1 or PCIe Gen-2 and SAS/SATA (up to 6 Gbps) RATIO_3.5 (1) (2) (3) (4) 0.8 1.0 1.2 –3.5 Vp-p dB Typical values represent most likely parametric norms at VDD = 2.5 V, TA = 25°C., and at the Recommended Operating Conditions at the time of product characterization and are not guaranteed. The Electrical Characteristics tables list specified specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed. Specified by device characterization. In PCIe Gen-3 mode, the output VOD level is not fixed. It will be adjusted automatically based on the VID input amplitude level. The output VOD level set by DEMA/B[1:0] in this MODE is dependent on the VID level and the frequency content. The DS125BR800 repeater is designed to be non-limiting in this MODE, so the TX-FIR (de-emphasis) is passed to the RX to support the handshake negotiation link training. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 7 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Electrical Characteristics(1)(2)(3) (continued) PARAMETER TEST CONDITIONS VTX-DE-RATIO_6 TX de-emphasis ratio VOD = 1.0 Vp-p, DEM0 = R, DEM1 = R PCIe Gen-1 or PCIe Gen-2 and SAS/SATA (up to 6 Gbps) TTX-DJ Deterministic Jitter VID = 800 mV, PRBS15 pattern, 8.0 Gbps, VOD = 1.0 V, EQ = 0x00, DE = 0 dB, (no input or output trace loss) 0.05 UIpp TTX-RJ Random Jitter VID = 800 mV, 0101 pattern, 8.0 Gbps, VOD = 1.0 V, EQ = 0x00, DE = 0 dB, (no input or output trace loss) 0.3 ps RMS TTX-RISE-FALL TX rise/fall time 20% to 80% of differential output voltage TRF-MISMATCH TX rise/fall mismatch 20% to 80% of differential output voltage 0.01 RLTX-DIFF TX Differential return loss 0.05 - 7.5 GHz –15 dB 7.5 - 15 GHz –5 dB RLTX-CM TX Common mode return loss 0.05 - 5 GHz –10 dB ZTX-DIFF-DC DC differential TX impedance VTX-CM-AC-PP TX AC common mode voltage VOD = 1.0 Vp-p, DEM0 = 1, DEM1 = 0 ITX-SHORT TX short circuit current limit Total current the transmitter can supply when shorted to VDD or GND VTX-CM-DC- Absolute delta of DC common mode voltage during L0 and electrical idle 100 mV VTX-CM-DC-LINE- Absolute delta of DC common mode voltgae between TX+ and TXDELTA 25 mV ACTIVE-IDLEDELTA MIN TYP MAX -6 35 UNIT dB 45 ps 0.1 UI Ω 100 100 mVp-p 20 mA TTX-IDLE-DATA Max time to transition to differential DATA signal after IDLE VID = 1.0 Vp-p, 8 Gbps 3.5 ns TTX-DATA-IDLE Max time to transition to IDLE after differential DATA signal VID = 1.0 Vp-p, 8 Gbps 6.2 ns TPLHD/PHLD Differential Propagation Delay EQ = 00 (5) 200 ps TLSK Lane to lane skew T = 25°C, VDD = 2.5 V 25 ps TPPSK Part to part propagation delay skew T = 25°C, VDD = 2.5 V 40 ps EQUALIZATION DJE1 Residual deterministic jitter at 12 Gbps 30in 5mils FR4, VID = 0.6 Vp-p, PRBS15, EQ = 0x07, DEM = 0 dB 0.18 UIpp DJE2 Residual deterministic jitter at 8 Gbps 30in 5mils FR4, VID = 0.6 Vp-p, PRBS15,EQ = 0x07, DEM = 0 dB 0.11 UIpp DJE3 Residual deterministic jitter at 5 Gbps 30in 5mils FR4, VID = 0.6 Vp-p, PRBS15, EQ = 0x07, DEM = 0 dB 0.07 UIpp DJE4 Residual deterministic jitter at 12 Gbps 5m 30 awg cable, VID = 0.6 Vp-p, PRBS15, EQ = 0x07, DEM = 0 dB 0.25 UIpp DJE5 Residual deterministic jitter at 5 Gbps 0.33 UIpp 0.1 UIpp 8m 30 awg cable, VID = 0.6 Vp-p, PRBS15, EQ = 0x0F, DEM = 0 dB DE-EMPHASIS — PCIe Gen-1 or PCIe Gen-2 and SAS/SATA (up to 6 Gbps) DJD1 (5) 8 Residual deterministic jitter at 12 Gbps Input Channel: 20in 5mils FR4, Output Channel: 10in 5mils FR4 VID = 0.6 Vp-p, PRBS15, EQ = 0x03, VOD = 1.0 Vp-p, DEM = –3.5 dB Propagation Delay measurements will change slightly based on the level of EQ selected. EQ = 00 will result in the longest propagation delays. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 7.6 Electrical Characteristics: Serial Management Bus Interface over recommended operating supply and temperature ranges unless other specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SERIAL BUS INTERFACE DC SPECIFICATIONS VIL Data, Clock Input Low Voltage VIH Data, Clock Input High Voltage IPULLUP Current Through Pull-Up Resistor or Current Source VDD Nominal Bus Voltage ILEAK-Bus Input Leakage Per Bus Segment ILEAK-Pin Input Leakage Per Device Pin CI Capacitance for SDA and SCL (1) (2) RTERM External Termination Resistance pull to VDD = 2.5 V ± 5% or 3.3 V ± 10% Pullup VDD = 3.3 V (1) (2) (3) 2000 Ω Pullup VDD = 2.5 V (1) (2) (3) 1000 Ω (1) (2) (3) 2.1 High Power Specification 0.8 V 3.6 V 4 (1) mA 2.375 3.6 V –200 200 µA –15 µA 10 pF Recommended value. Recommended maximum capacitance load per bus segment is 400 pF. Maximum termination voltage should be identical to the device supply voltage. 7.7 Timing Requirements MIN TYP 280 400 MAX UNIT 400 kHz 520 kHz SERIAL BUS INTERFACE TIMING SPECIFICATIONS FSMB TBUF ENSMB = VDD (Slave Mode) Bus Operating Frequency (1) ENSMB = FLOAT (Master Mode) Bus Free Time Between Stop and Start Condition 1.3 µs 0.6 µs TSU:STA Repeated Start Condition Setup Time 0.6 µs TSU:STO Stop Condition Setup Time 0.6 µs THD:DAT Data Hold Time 0 ns TSU:DAT Data Setup Time 100 ns TLOW Clock Low Period 1.3 µs THIGH Clock High Period THD:STA Hold time after (Repeated) Start Condition. After this period, the first clock is generated. At IPULLUP, Max (2) 0.6 50 µs 300 ns tF Clock/Data Fall Time (2) tR Clock/Data Rise Time (2) 300 ns tPOR Time in which a device must be operational after power-on reset (2) (3) 500 ms (1) (2) (3) In Master Mode, a serial EEPROM with a minimum rating of 520 KHz is required. Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1 SMBus common AC specifications for details. Specified by Design. Parameter not tested in production. 80% VOD = [Out+ - Out-] 80% 0V 20% tRISE 20% tFALL Figure 1. CML Output and Rise and FALL Transition Time Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 9 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com + IN 0V tPLHD tPHLD + OUT 0V - Figure 2. Propagation Delay Timing Diagram + IN 0V DATA tIDLE-DATA tDATA-IDLE + OUT 0V DATA IDLE IDLE Figure 3. Transmit IDLE-DATA and DATA-IDLE Response Time tLOW tR tHIGH SCL tHD:STA tBUF tHD:DAT tF tSU:STA tSU:DAT tSU:STO SDA SP ST SP ST Figure 4. SMBus Timing Parameters 10 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 7.8 Typical Characteristics 640.0 1021 VDD = 2.625V 620.0 T = 25°C VDD = 2.5V 600.0 1019 VDD = 2.375V 560.0 VOD (mVp-p) PD (mW) 580.0 540.0 520.0 500.0 1016 1013 480.0 1010 T = 25oC 460.0 440.0 1007 2.375 420.0 0.8 0.9 1 1.1 1.2 1.3 2.5 VOD (Vp-p) 2.625 VDD (V) Figure 5. Power Dissipation (PD) vs Output Differential Voltage (VOD) Figure 6. Output Differential Voltage (VOD = 1.0 Vp-p) vs Supply Voltage (VDD) 1020 VDD = 2.5 V VOD (mVp-p) 1018 1016 1014 1012 - 40 -15 10 35 60 85 TEMPERATURE (°C) Figure 7. Output Differential Voltage (VOD = 1.0 Vp-p) vs. Temperature Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 11 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com 8 Detailed Description 8.1 Overview The DS125BR800 compensates for lossy printed circuit board backplanes and balanced cables. The DS125BR800 operates in 3 modes: Pin Control Mode (ENSMB = 0), SMBus Slave Mode (ENSMB = 1) and SMBus Master Mode (ENSMB = float) to load register information from external EEPROM; refer to SMBUS Master Mode for additional information. 8.2 Functional Block Diagram VDD Auto/Manual RXDET INx_n+ RATE DET VOD/DeEMPHASIS CONTROL DEMA/B SMBus EQ OUTBUF INx_n- OUTx_n+ OUTx_n- EQA/B IDLE DET SMBus TX Idle Enable SMBus Figure 8. Block Diagram - Detail View Of Channel (1 of 8) 8.3 Feature Description 8.3.1 4-level Input Configuration Guidelines The 4-level input pins use a resistor divider to help set the 4 valid levels and provide a wider range of control settings when ENSMB=0. There is an internal 30-kΩ pull-up and a 60-kΩ pulldown connected to the package pin. These resistors, together with the external resistor connection combine to achieve the desired voltage level. Using the 1-kΩ pull-up, 1-kΩ pull-down, no connect, and 20-kΩ pull-down provide the optimal voltage levels for each of the four input states. Table 1. 4-Level Input Voltage • • • LEVEL SETTING 3.3-V MODE 0 Tie 1 kΩ to GND 0.10 V 2.5-V MODE 0.08 V R Tie 20 kΩ to GND 1/3 x VDD 1/3 x VDD Float Float (leave pin open) 2/3 x VDD 2/3 x VDD 1 Tie 1 kΩ to VDD VIN - 0.05 V VIN - 0.04 V Level 1 - 2 = 0.2 × VIN or VDD Level 2 - 3 = 0.5 × VIN or VDD Level 3 - 4 = 0.8 × VIN or VDD In order to minimize the startup current associated with the integrated 2.5-V regulator the 1 kΩ pullup and pulldown resistors are recommended. If several 4-level inputs require the same setting, it is possible to combine two or more 1-kΩ resistors into a single lower value resistor. As an example; combining two inputs with a single 500-Ω resistor is a good way to save board space. 12 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 8.3.2 PCIe Signal Integrity When using the DS125BR800 in PCIe Gen-3 systems, there are specific signal integrity settings to ensure signal integrity margin. The settings were achieved with completing extensive testing. Contact your field representative for more information regarding the testing completed to achieve these settings. For tuning the in the downstream direction (from CPU to EP). • EQ: use the guidelines outlined in Table 2. • De-Emphasis: use the guidelines outlined in Table 3. • VOD: use the guidelines outlined in Table 3. For tuning in the upstream direction (from EP to CPU). • EQ: use the guidelines outlined in Table 2. • De-Emphasis: – For trace lengths < 15" set to -3.5 dB – For trace lengths > 15" set to -6 dB • VOD: set to 900 mV Table 2. Equalizer Settings Level EQA1 EQB1 1 2 3 (1) Suggested Use (1) EQA0 EQB EQ – 8 bits [7:0] dB at 1.5 GHz dB at 2.5 GHz dB at 4 GHz dB at 6 GHz 0 0 0000 0000 = 0x00 2.5 3.5 3.8 3.1 FR4 < 5 inch trace 0 R 0000 0001 = 0x01 3.8 5.4 6.7 6.7 FR4 5-10 inch trace 0 Float 0000 0010 = 0x02 5.0 7.0 8.4 8.4 FR4 10 inch trace 4 0 1 0000 0011 = 0x03 5.9 8.0 9.3 9.1 FR4 15-20 inch trace 5 R 0 0000 0111 = 0x07 7.4 10.3 12.8 13.7 FR4 20-30 inch trace 6 R R 0001 0101 = 0x15 6.9 10.2 13.9 16.2 FR4 25-30 inch trace 7 R Float 0000 1011 = 0x0B 9.0 12.4 15.3 15.9 FR4 25-30 inch trace 8 R 1 0000 1111 = 0x0F 10.2 13.8 16.7 17.0 8m, 30awg cable 9 Float 0 0101 0101 = 0x55 8.5 12.6 17.5 20.7 > 8m cable 10 Float R 0001 1111 = 0x1F 11.7 16.2 20.3 21.8 11 Float Float 0010 1111 = 0x2F 13.2 18.3 22.8 23.6 12 Float 1 0011 1111 = 0x3F 14.4 19.8 24.2 24.7 13 1 0 1010 1010 = 0xAA 14.4 20.5 26.4 28.0 14 1 R 0111 1111 = 0x7F 16.0 22.2 27.8 29.2 15 1 Float 1011 1111 = 0xBF 17.6 24.4 30.2 30.9 16 1 1 1111 1111 = 0xFF 18.7 25.8 31.6 31.9 Cable and FR4 lengths are for reference only. FR4 lengths based on a 100 Ω differential stripline with 5-mil traces and 8-mil trace separation. Optimal EQ setting should be determined via simulation and prototype verification. Table 3. Output Voltage and De-Emphasis Settings (1) (2) Level DEMA1 DEMB1 DEMA0 DEMB0 VOD Vp-p DEM dB (1) Inner Amplitude Vp-p Suggested Use (2) 1 0 0 0.8 0 0.8 FR4 < 5 inch 4–mil trace 2 0 R 0.9 0 0.9 FR4 < 5 inch 4–mil trace 3 0 Float 0.9 - 3.5 0.6 FR4 10 inch 4–mil trace 4 0 1 1.0 0 1.0 FR4 < 5 inch 4–mil trace 5 R 0 1.0 - 3.5 0.7 FR4 10 inch 4–mil trace 6 R R 1.0 -6 0.5 FR4 15 inch 4–mil trace 7 R Float 1.1 0 1.1 FR4 < 5 inch 4–mil trace The VOD output amplitude and DEM de-emphasis levels are set with the DEMA/B[1:0] pins. The de-emphasis levels are available in PCIe Gen-3 modes when MODE = 1 (tied to VIN) FR4 lengths are for reference only. FR4 lengths based on a 100 Ω differential stripline with 5-mil traces and 8-mil trace separation. Optimal DEM settings should be determined via simulation and prototype verification. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 13 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Table 3. Output Voltage and De-Emphasis Settings (continued) DEMA1 DEMB1 DEMA0 DEMB0 VOD Vp-p DEM dB (1) Inner Amplitude Vp-p Suggested Use (2) 8 R 1 1.1 - 3.5 0.7 FR4 10 inch 4–mil trace 9 Float 0 1.1 -6 0.6 FR4 15 inch 4–mil trace 10 Float R 1.2 0 1.2 FR4 < 5 inch 4–mil trace 11 Float Float 1.2 - 3.5 0.8 FR4 10 inch 4–mil trace 12 Float 1 1.2 -6 0.6 FR4 15 inch 4–mil trace 13 1 0 1.3 0 1.3 FR4 < 5 inch 4–mil trace 14 1 R 1.3 - 3.5 0.9 FR4 10 inch 4–mil trace 15 1 Float 1.3 -6 0.7 FR4 15 inch 4–mil trace 16 1 1 1.3 -9 0.5 FR4 20 inch 4–mil trace Level Table 4. RX-Detect Settings PWDN (PIN 52) RXDET (PIN 22) SMBus REG bit [3:2] 0 0 00 Hi-Z X 0 Tie 20 kΩ to GND 01 Pre Detect: Hi-Z Post Detect: 50 Ω PCIe Only Input Termination Recommeded Use Comments Manual RX-Detect, input is high impedance mode Auto RX-Detect, outputs test every 12 msec for 600 msec then stops; termination is Hi-Z until detection; once detected input termination is 50 Ω. Reset function by pulsing PWDN high for 5 µsec then low again 0 Float (Default) 10 0 1 11 1 X Pre Detect: Hi-Z Post Detect: 50 Ω PCIe Only Auto RX-Detect, outputs test every 12 msec until detection occurs; termination is Hi-Z until RX detection; once detected input termination is 50 Ω. 50 Ω All Others Manual RX-Detect, input is 50 Ω. High Impedance X Power down mode, input is Hi-Z, output drivers are disabled. Used to reset RX-Detect State Machine when held high for 5 µsec. 8.3.2.1 RX-Detect in SAS/SATA (up to 6 Gbps) Applications Unlike PCIe systems, SAS/SATA (up to 6 Gbps) systems use a low speed Out-Of-Band or OOB communications sequence to detect and communicate between Controllers/Expanders and target drives. This communication eliminates the need to detect for endpoints like PCIe. For SAS/SATA systems, it is recommended to tie the RXDET pin high. This will ensure any OOB sequences sent from the Controller/Expander will reach the target drive without any additional latency due to the termination detection sequence defined by PCIe. Table 5. Signal Detect Threshold Level (1) (1) SD_TH (PIN 26) SMBus REG Bit [3:2] and [1:0] Assert Level (typ) De-assert Level (typ) 0 10 210 mVp-p 150 mVp-p R 01 160 mVp-p 100 mVp-p F (default) 00 180 mVp-p 110 mVp-p 1 11 190 mVp-p 130 mVp-p VDD = 2.5 V, 25°C and 0101 pattern at 8 Gbps 8.3.2.1.1 Signal Detect Control for Datarates above 8 Gbps Signal detect bandwidth limitations combined with high levels of signal attenuation can result in intermittent data loss above 8 Gbps. This data loss can be eliminated by disabling automatic detection and forcing the Signal Detect function to be always "on". This programming requires SMBus control over the DS125BR800 to be present. The Signal Detect function is controlled for each channel independently. The register programming sequence is shown below: 1. Write register 0x06 = 0x18 //* Enable SMBus register programming 14 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 2. Write registers 0x0D[1]= 1'b, 0x14[1] = 1'b, 0x1B[1] = 1'b, 0x22[1] = 1'b //* CH0 - CH3 3. Write registers 0x2A[1]= 1'b, 0x31[1] = 1'b, 0x38[1] = 1'b, 0x3F[1] = 1'b //* CH4 - CH7 Table 6. MODE Operation With Pin Control MODE (PIN 21) Driver Characteristics 0 Limiting R Transparent without DE F (default) Automatic 1 Transparent with DE PCIe SAS SATA 10G-KR X 10GbE CPRI OBSAI SRIO (R)XAUI Interlaken Infiniband X X X X X X NOTE: Automatic operation allows input to sense the incoming data-rate and utilize a "Transparent" output driver for operation at or above 8 Gbps. NOTE: SAS/SATA up to 6 Gbps. 8.3.2.2 MODE Operation with SMBus Registers When in SMBus mode (Slave or Master), the MODE pin retains control of the output driver characteristics. In order to override this control function, Register 0x08[2] must be written with a "1". Writing this bit enables MODE control of each channel individually using the channel registers defined in Table 10. 8.4 Device Functional Modes 8.4.1 Pin Control Mode When in pin mode (ENSMB = 0), equalization and de-emphasis can be selected via pin for each side independently. When de-emphasis is asserted VOD is automatically adjusted per Table 3. For PCIe applications, the RXDET pins provides automatic and manual control for input termination (50 Ω or >50 kΩ). MODE setting is also pin controllable with pin selections (PCIe Gen-1, PCIe Gen-2, auto detect, and PCIe Gen-3). The receiver electrical idle detect threshold is also adjustable via the SD_TH pin. 8.4.2 SMBus Mode When in SMBus mode (ENSMB = 1), the VOD (output amplitude), equalization, de-emphasis, and termination disable features are all programmable on a individual lane basis, instead of grouped by A or B as in the pin mode case. Upon assertion of ENSMB, the EQx and DEMx functions revert to register control immediately. The EQx and DEMx pins are converted to AD0-AD3 SMBus address inputs. The other external control pins (MODE, RXDET and SD_TH) remain active unless their respective registers are written to and the appropriate override bit is set, in which case they are ignored until ENSMB is driven low (pin mode). On power-up and when ENSMB is driven low all registers are reset to their default state. If PWDN is asserted while ENSMB is high, the registers retain their current state. Equalization settings accessible via the pin controls were chosen to meet the needs of most high speed applications. If additional fine tuning or adjustment is needed, additional equalization settings can be accessed via the SMBus registers. Each input has a total of 256 possible equalization settings. 4-level Input Configuration Guidelines shows the 16 setting when the device is in pin mode. When using SMBus mode, the equalization, VOD and de-Emphasis levels are set by registers. 8.5 Programming 8.5.1 SMBus Master Mode The DS125BR800 devices support reading directly from an external EEPROM device by implementing SMBus Master mode. When using the SMBus master mode, the DS125BR800 will read directly from specific location in the external EEPROM. When designing a system for using the external EEPROM, the user needs to follow these specific guidelines. For additional information, refer to SNLA228. • Set ENSMB = Float — enable the SMBUS master mode. • The external EEPROM device address byte must be 0xA0 and capable of 520 kHz operation at 2.5 V and 3.3 V supply. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 15 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Programming (continued) • Set the AD[3:0] inputs for SMBus address byte. When the AD[3:0] = 0000'b, the device address byte is 0xB0. When tying multiple DS125BR800 devices to the SDA and SCL bus, use these guidelines to configure the devices. • Use SMBus AD[3:0] address bits so that each device can loaded it's configuration from the EEPROM. Example below is for 4 device. – U1: AD[3:0] = 0000 = 0xB0, – U2: AD[3:0] = 0001 = 0xB2, – U3: AD[3:0] = 0010 = 0xB4, – U4: AD[3:0] = 0011 = 0xB6 • Use a pull-up resistor on SDA and SCL; value = 2 kΩ • Daisy-chain READ_EN (pin 26) and ALL_DONE (pin 27) from one device to the next device in the sequence so that they do not compete for the EEPROM at the same time. 1. Tie READ_EN of the 1st device in the chain (U1) to GND 2. Tie ALL_DONE of U1 to READ_EN of U2 3. Tie ALL_DONE of U2 to READ_EN of U3 4. Tie ALL_DONE of U3 to READ_EN of U4 5. Optional: Tie ALL_DONE output of U4 to a LED to show the devices have been loaded successfully Below is an example of a 2 kbits (256 x 8-bit) EEPROM in hex format for the DS125BR800 device. The first 3 bytes of the EEPROM always contain a header common and necessary to control initialization of all devices connected to the I2C bus. CRC enable flag to enable/disable CRC checking. If CRC checking is disabled, a fixed pattern (8’hA5) is written/read instead of the CRC byte from the CRC location, to simplify the control. There is a MAP bit to flag the presence of an address map that specifies the configuration data start in the EEPROM. If the MAP bit is not present the configuration data start address is derived from the DS125BR800 address and the configuration data size. A bit to indicate an EEPROM size > 256 bytes is necessary to properly address the EEPROM. There are 37 bytes of data size for each DS125BR800 device. For additional information on EEPROM programming, refer to SNLA228. spacer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he maximum EEPROM size supported is 8-kbits (1024 x 8 bits). 16 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Table 7. EEPROM Register Map - Single Device with Default Value EEPROM Address Byte Description Default Value 0x00 0x00 Description Default Value 0x01 0x00 Description Default Value 0x02 0x00 Description 0x03 SMBus Register Default Value 0x00 Description 0x04 SMBus Register Default Value 00 Description 0x05 SMBus Register Default Value 04 Description 0x06 SMBus Register Default Value 07 Description 0x07 SMBus Register Default Value 00 Description 0x08 SMBus Register Default Value 2F Description 0x09 SMBus Register Default Value AD Description 0x0A SMBus Register Default Value 40 Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 BIt 0 CRC EN Address Map Present EEPROM > 256 Bytes Reserved DEVICE COUNT[3] DEVICE COUNT[2] DEVICE COUNT[1] DEVICE COUNT[0] 0 0 0 0 0 0 0 0 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved 0 0 0 0 0 0 0 0 Max EEPROM Burst size[7] Max EEPROM Burst size[6] Max EEPROM Burst size[5] Max EEPROM Burst size[4] Max EEPROM Burst size[3] Max EEPROM Burst size[2] Max EEPROM Burst size[1] Max EEPROM Burst size[0] 0 0 0 0 0 0 0 0 PWDN_ch7 PWDN_ch6 PWDN_ch5 PWDN_ch4 PWDN_ch3 PWDN_ch2 PWDN_ch1 PWDN_ch0 0x01 [7] 0x01 [6] 0x01 [5] 0x01 [4] 0x01 [3] 0x01 [2] 0x01 [1] 0x01 [0] 0 0 0 0 0 0 0 0 lpbk_1 lpbk_0 PWDN_INPUTS PWDN_OSC Ovrd_PWDN Reserved Reserved Reserved 0x02 [5] 0x02 [4] 0x02 [3] 0x02 [2] 0x02 [0] 0x04 [7] 0x04 [6] 0x04 [5] 0 0 0 0 0 0 0 0 Reserved Reserved Reserved Reserved Reserved rxdet_btb_en Ovrd_idle_th Ovrd_RES 0x04 [4] 0x04 [3] 0x04 [2] 0x04 [1] 0x04 [0] 0x06 [4] 0x08 [6] 0x08 [5] 0 0 0 0 0 1 0 0 Ovrd_IDLE Ovrd_RX_DET Ovrd_MODE Ovrd_RES Ovrd_RES rx_delay_sel_2 rx_delay_sel_1 rx_delay_sel_0 0x08 [4] 0x08 [3] 0x08 [2] 0x08 [1] 0x08 [0] 0x0B [6] 0x0B [5] 0x0B [4] 0 0 0 0 0 1 1 1 RD_delay_sel_3 RD_delay_sel_2 RD_delay_sel_1 RD_delay_sel_0 ch0_Idle_auto ch0_Idle_sel ch0_RXDET_1 ch0_RXDET_0 0x0B [3] 0x0B [2] 0x0B [1] 0x0B [0] 0x0E [5] 0x0E [4] 0x0E [3] 0x0E [2] 0 0 0 0 0 0 0 0 ch0_BST_7 ch0_BST_6 ch0_BST_5 ch0_BST_4 ch0_BST_3 ch0_BST_2 ch0_BST_1 ch0_BST_0 0x0F [7] 0x0F [6] 0x0F [5] 0x0F [4] 0x0F [3] 0x0F [2] 0x0F [1] 0x0F [0] 0 0 1 0 1 1 1 1 ch0_Sel_scp ch0_Sel_mode ch0_RES_2 ch0_RES_1 ch0_RES_0 ch0_VOD_2 ch0_VOD_1 ch0_VOD_0 0x10 [7] 0x10 [6] 0x10 [5] 0x10 [4] 0x10 [3] 0x10 [2] 0x10 [1] 0x10 [0] 1 0 1 0 1 1 0 1 ch0_DEM_2 ch0_DEM_1 ch0_DEM_0 ch0_Slow ch0_idle_tha_1 ch0_idle_tha_0 ch0_idle_thd_1 ch0_idle_thd_0 0x11 [2] 0x11 [1] 0x11 [0] 0x12 [7] 0x12 [3] 0x12 [2] 0x12 [1] 0x12 [0] 0 1 0 0 0 0 0 0 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 17 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Table 7. EEPROM Register Map - Single Device with Default Value (continued) EEPROM Address Byte Description 0x0B SMBus Register Default Value 02 Description 0x0C SMBus Register Default Value FA Description 0x0D SMBus Register Default Value 2F Description 0x0E SMBus Register Default Value 00 Description 0x0F SMBus Register Default Value 2F Description 0x10 SMBus Register Default Value AD Description 0x11 SMBus Register Default Value 40 Description 0x12 SMBus Register Default Value 02 Description 0x13 SMBus Register Default Value FA Description 0x14 SMBus Register Default Value D4 Description 0x15 SMBus Register Default Value 18 09 Bit 3 Bit 2 Bit 1 ch1_Idle_auto Bit 7 ch1_Idle_sel Bit 6 ch1_RXDET_1 Bit 5 ch1_RXDET_0 Bit 4 ch1_BST_7 ch1_BST_6 ch1_BST_5 ch1_BST_4 0x15 [5] 0x15 [4] 0x15 [3] 0x15 [2] 0x16 [7] 0x16 [6] 0x16 [5] 0x16 [4] 0 0 0 0 0 0 1 0 ch1_BST_3 ch1_BST_2 ch1_BST_1 ch1_BST_0 ch1_Sel_scp ch1_Sel_mode ch1_RES_2 ch1_RES_1 0x16 [3] 0x16 [2] 0x16 [1] 0x16 [0] 0x17 [7] 0x17 [6] 0x17 [5] 0x17 [4] 1 1 1 1 1 0 1 0 ch1_RES_0 ch1_VOD_2 ch1_VOD_1 ch1_VOD_0 ch1_DEM_2 ch1_DEM_1 ch1_DEM_0 ch1_Slow 0x17 [3] 0x17 [2] 0x17 [1] 0x17 [0] 0x18 [2] 0x18 [1] 0x18 [0] 0x19 [7] 1 1 0 1 0 1 0 0 ch1_idle_tha_1 ch1_idle_tha_0 ch1_idle_thd_1 ch1_idle_thd_0 ch2_Idle_auto ch2_Idle_sel ch2_RXDET_1 ch2_RXDET_0 0x19 [3] 0x19 [2] 0x19 [1] 0x19 [0] 0x1C [5] 0x1C [4] 0x1C [3] 0x1C [2] 0 0 0 0 0 0 0 0 ch2_BST_7 ch2_BST_6 ch2_BST_5 ch2_BST_4 ch2_BST_3 ch2_BST_2 ch2_BST_1 ch2_BST_0 0x1D [7] 0x1D [6] 0x1D [5] 0x1D [4] 0x1D [3] 0x1D [2] 0x1D [1] 0x1D [0] 0 0 1 0 1 1 1 1 ch2_Sel_scp ch2_Sel_mode ch2_RES_2 ch2_RES_1 ch2_RES_0 ch2_VOD_2 ch2_VOD_1 ch2_VOD_0 0x1E [7] 0x1E [6] 0x1E [5] 0x1E [4] 0x1E [3] 0x1E [2] 0x1E [1] 0x1E [0] 1 0 1 0 1 1 0 1 ch2_DEM_2 ch2_DEM_1 ch2_DEM_0 ch2_Slow ch2_idle_tha_1 ch2_idle_tha_0 ch2_idle_thd_1 ch2_idle_thd_0 0x1F [2] 0x1F [1] 0x1F [0] 0x20 [7] 0x20 [3] 0x20 [2] 0x20 [1] 0x20 [0] 0 1 0 0 0 0 0 0 ch3_Idle_auto ch3_Idle_sel ch3_RXDET_1 ch3_RXDET_0 ch3_BST_7 ch3_BST_6 ch3_BST_5 ch3_BST_4 0x23 [5] 0x23 [4] 0x23 [3] 0x23 [2] 0x24 [7] 0x24 [6] 0x24 [5] 0x24 [4] 0 0 0 0 0 0 1 0 ch3_BST_3 ch3_BST_2 ch3_BST_1 ch3_BST_0 ch3_Sel_scp ch3_Sel_mode ch3_RES_2 ch3_RES_1 0x24 [3] 0x24 [2] 0x24 [1] 0x24 [0] 0x25 [7] 0x25 [6] 0x25 [5] 0x25 [4] 1 1 1 1 1 0 1 0 ch3_RES_0 ch3_VOD_2 ch3_VOD_1 ch3_VOD_0 ch3_DEM_2 ch3_DEM_1 ch3_DEM_0 ch3_Slow 0x25 [3] 0x25 [2] 0x25 [1] 0x25 [0] 0x26 [2] 0x26 [1] 0x26 [0] 0x27 [7] 1 1 0 1 0 1 0 0 ch3_idle_tha_1 ch3_idle_tha_0 ch3_idle_thd_1 ch3_idle_thd_0 ovrd_fast_idle en_high_idle_th_n en_high_idle_th_s en_fast_idle_n 0x27 [3] 0x27 [2] 0x27 [1] 0x27 [0] 0x28 [6] 0x28 [5] 0x28 [4] 0x28 [3] 0 0 0 0 0 0 0 1 Submit Documentation Feedback BIt 0 Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Table 7. EEPROM Register Map - Single Device with Default Value (continued) EEPROM Address Byte Description 0x16 SMBus Register Default Value 80 Description 0x17 SMBus Register Default Value 5F Description 0x18 SMBus Register Default Value 5A Description 0x19 SMBus Register Default Value 80 Description 0x1A SMBus Register Default Value 05 Description 0x1B SMBus Register Default Value F5 Description 0x1C SMBus Register Default Value A8 Description 0x1D SMBus Register Default Value 00 Description 0x1E SMBus Register Default Value 5F Description 0x1F SMBus Register Default Value 5A Description 0x20 SMBus Register Default Value 80 Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 BIt 0 en_fast_idle_s eqsd_mgain_n eqsd_mgain_s ch4_Idle_auto ch4_Idle_sel ch4_RXDET_1 ch4_RXDET_0 ch4_BST_7 0x28 [2] 0x28 [1] 0x28 [0] 0x2B [5] 0x2B [4] 0x2B [3] 0x2B [2] 0x2C [7] 1 0 0 0 0 0 0 0 ch4_BST_6 ch4_BST_5 ch4_BST_4 ch4_BST_3 ch4_BST_2 ch4_BST_1 ch4_BST_0 ch4_Sel_scp 0x2C [6] 0x2C [5] 0x2C [4] 0x2C [3] 0x2C [2] 0x2C [1] 0x2C [0] 0x2D [7] 0 1 0 1 1 1 1 1 ch4_Sel_mode ch4_RES_2 ch4_RES_1 ch4_RES_0 ch4_VOD_2 ch4_VOD_1 ch4_VOD_0 ch4_DEM_2 0x2D [6] 0x2D [5] 0x2D [4] 0x2D [3] 0x2D [2] 0x2D [1] 0x2D [0] 0x2E [2] 0 1 0 1 1 0 1 0 ch4_DEM_1 ch4_DEM_0 ch4_Slow ch4_idle_tha_1 ch4_idle_tha_0 ch4_idle_thd_1 ch4_idle_thd_0 ch5_Idle_auto 0x2E [1] 0x2E [0] 0x2F [7] 0x2F [3] 0x2F [2] 0x2F [1] 0x2F [0] 0x32 [5] 1 0 0 0 0 0 0 0 ch5_Idle_sel ch5_RXDET_1 ch5_RXDET_0 ch5_BST_7 ch5_BST_6 ch5_BST_5 ch5_BST_4 ch5_BST_3 0x32 [4] 0x32 [3] 0x32 [2] 0x33 [7] 0x33 [6] 0x33 [5] 0x33 [4] 0x33 [3] 0 0 0 0 0 1 0 1 ch5_BST_2 ch5_BST_1 ch5_BST_0 ch5_Sel_scp ch5_Sel_mode ch5_RES_2 ch5_RES_1 ch5_RES_0 0x33 [2] 0x33 [1] 0x33 [0] 0x34 [7] 0x34 [6] 0x34 [5] 0x34 [4] 0x34 [3] 1 1 1 1 0 1 0 1 ch5_VOD_2 ch5_VOD_1 ch5_VOD_0 ch5_DEM_2 ch5_DEM_1 ch5_DEM_0 ch5_Slow ch5_idle_tha_1 0x34 [2] 0x34 [1] 0x34 [0] 0x35 [2] 0x35 [1] 0x35 [0] 0x36 [7] 0x36 [3] 1 0 1 0 1 0 0 0 ch5_idle_tha_0 ch5_idle_thd_1 ch5_idle_thd_0 ch6_Idle_auto ch6_Idle_sel ch6_RXDET_1 ch6_RXDET_0 ch6_BST_7 0x36 [2] 0x36 [1] 0x36 [0] 0x39 [5] 0x39 [4] 0x39 [3] 0x39 [2] 0x3A [7] 0 0 0 0 0 0 0 0 ch6_BST_6 ch6_BST_5 ch6_BST_4 ch6_BST_3 ch6_BST_2 ch6_BST_1 ch6_BST_0 ch6_Sel_scp 0x3A [6] 0x3A [5] 0x3A [4] 0x3A [3] 0x3A [2] 0x3A [1] 0x3A [0] 0x3B [7] 0 1 0 1 1 1 1 1 ch6_Sel_mode ch6_RES_2 ch6_RES_1 ch6_RES_0 ch6_VOD_2 ch6_VOD_1 ch6_VOD_0 ch6_DEM_2 0x3B [6] 0x3B [5] 0x3B [4] 0x3B [3] 0x3B [2] 0x3B [1] 0x3B [0] 0x3C [2] 0 1 0 1 1 0 1 0 ch6_DEM_1 ch6_DEM_0 ch6_Slow ch6_idle_tha_1 ch6_idle_tha_0 ch6_idle_thd_1 ch6_idle_thd_0 ch7_Idle_auto 0x3C [1] 0x3C [0] 0x3D [7] 0x3D [3] 0x3D [2] 0x3D [1] 0x3D [0] 0x40 [5] 1 0 0 0 0 0 0 0 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 19 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Table 7. EEPROM Register Map - Single Device with Default Value (continued) EEPROM Address Byte Description 0x21 SMBus Register Default Value 05 Description 0x22 SMBus Register Default Value F5 Description 0x23 SMBus Register Default Value A8 Description 0x24 SMBus Register Default Value 00 Description 0x25 SMBus Register Default Value 00 Description 0x26 SMBus Register Default Value 54 Description 0x27 SMBus Register Default Value 20 54 Bit 4 Bit 3 Bit 2 Bit 1 ch7_Idle_sel Bit 7 ch7_RXDET_1 Bit 6 ch7_RXDET_0 Bit 5 ch7_BST_7 ch7_BST_6 ch7_BST_5 ch7_BST_4 ch7_BST_3 0x40 [4] 0x40 [3] 0x40 [2] 0x41 [7] 0x41 [6] 0x41 [5] 0x41 [4] 0x41 [3] 0 0 0 0 0 1 0 1 ch7_BST_2 ch7_BST_1 ch7_BST_0 ch7_Sel_scp ch7_Sel_mode ch7_RES_2 ch7_RES_1 ch7_RES_0 0x41 [2] 0x41 [1] 0x41 [0] 0x42 [7] 0x42 [6] 0x42 [5] 0x42 [4] 0x42 [3] 1 1 1 1 0 1 0 1 ch7_VOD_2 ch7_VOD_1 ch7_VOD_0 ch7_DEM_2 ch7_DEM_1 ch7_DEM_0 ch7_Slow ch7_idle_tha_1 0x42 [2] 0x42 [1] 0x42 [0] 0x43 [2] 0x43 [1] 0x43 [0] 0x44 [7] 0x44 [3] 1 0 1 0 1 0 0 0 ch7_idle_tha_0 ch7_idle_thd_1 ch7_idle_thd_0 Reserved Reserved Reserved Reserved Reserved 0x44 [2] 0x44 [1] 0x44 [0] 0x47 [3] 0x47 [2] 0x47 [2] 0x47 [0] 0x48 [7] 0 0 0 0 0 0 0 0 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved 0x48 [6] 0x4C [7] 0x4C [6] 0x4C [5] 0x4C [4] 0x4C [3] 0x4C [0] 0x59 [0] 0 0 0 0 0 0 0 0 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved 0x5A [7] 0x5A [6] 0x5A [5] 0x5A [4] 0x5A [3] 0x5A [2] 0x5A [1] 0x5A [0] 0 1 0 1 0 1 0 0 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved 0x5B [7] 0x5B [6] 0x5B [5] 0x5B [4] 0x5B [3] 0x5B [2] 0x5B [1] 0x5B [0] 0 1 0 1 0 1 0 0 Submit Documentation Feedback BIt 0 Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Table 8. Example of EEPROM for Four Devices Using Two Address Maps EEPROM Address Address (Hex) EEPROM Data 0 00 0x43 Comments 1 01 0x00 2 02 0x08 EEPROM Burst Size 3 03 0x00 CRC not used 4 04 0x0B Device 0 Address Location 5 05 0x00 CRC not used 6 06 0x0B Device 1 Address Location 7 07 0x00 CRC not used 8 08 0x30 Device 2 Address Location 9 09 0x00 CRC not used 10 0A 0x30 Device 3 Address Location 11 0B 0x00 Begin Device 0, 1 - Address Offset 3 12 0C 0x00 13 0D 0x04 14 0E 0x07 15 0F 0x00 16 10 0x00 EQ CHB0 = 00 17 11 0xAB VOD CHB0 = 1.0 V 18 12 0x00 DEM CHB0 = 0 (0 dB) 19 13 0x00 EQ CHB1 = 00 20 14 0x0A VOD CHB1 = 1.0 V 21 15 0xB0 DEM CHB1 = 0 (0 dB) 22 16 0x00 23 17 0x00 EQ CHB2 = 00 24 18 0xAB VOD CHB2 = 1.0 V 25 19 0x00 DEM CHB2 = 0 (0 dB) 26 1A 0x00 EQ CHB3 = 00 27 1B 0x0A VOD CHB3 = 1.0 V 28 1C 0xB0 DEM CHB3 = 0 (0 dB) 29 1D 0x01 30 1E 0x80 31 1F 0x01 EQ CHA0 = 00 32 20 0x56 VOD CHA0 = 1.0 V 33 21 0x00 DEM CHA0 = 0 (0 dB) 34 22 0x00 EQ CHA1 = 00 35 23 0x15 VOD CHA1 = 1.0 V 36 24 0x60 DEM CHA1 = 0 (0 dB) 37 25 0x00 38 26 0x01 EQ CHA2 = 00 39 27 0x56 VOD CHA2 = 1.0 V 40 28 0x00 DEM CHA2 = 0 (0 dB) 41 29 0x00 EQ CHA3 = 00 42 2A 0x15 VOD CHA3 = 1.0 V 43 2B 0x60 DEM CHA3 = 0 (0 dB) 44 2C 0x00 45 2D 0x00 46 2E 0x54 CRC_EN = 0, Address Map = 1, >256 bytes = 0, Device Count[3:0] = 3 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 21 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Table 8. Example of EEPROM for Four Devices Using Two Address Maps (continued) EEPROM Address Address (Hex) EEPROM Data 47 2F 0x54 End Device 0, 1 - Address Offset 39 Comments 48 30 0x00 Begin Device 2, 3 - Address Offset 3 49 31 0x00 50 32 0x04 51 33 0x07 52 34 0x00 53 35 0x00 EQ CHB0 = 00 54 36 0xAB VOD CHB0 = 1.0 V 55 37 0x00 DEM CHB0 = 0 (0 dB) 56 38 0x00 EQ CHB1 = 00 57 39 0x0A VOD CHB1 = 1.0 V 58 3A 0xB0 DEM CHB1 = 0 (0 dB) 59 3B 0x00 60 3C 0x00 EQ CHB2 = 00 61 3D 0xAB VOD CHB2 = 1.0 V 62 3E 0x00 DEM CHB2 = 0 (0 dB) 63 3F 0x00 EQ CHB3 = 00 64 40 0x0A VOD CHB3 = 1.0 V 65 41 0xB0 DEM CHB3 = 0 (0 dB) 66 42 0x01 67 43 0x80 68 44 0x01 EQ CHA0 = 00 69 45 0x56 VOD CHA0 = 1.0 V 70 46 0x00 DEM CHA0 = 0 (0 dB) 71 47 0x00 EQ CHA1 = 00 72 48 0x15 VOD CHA1 = 1.0 V 73 49 0x60 DEM CHA1 = 0 (0 dB) 74 4A 0x00 75 4B 0x01 EQ CHA2 = 00 76 4C 0x56 VOD CHA2 = 1.0 V 77 4D 0x00 DEM CHA2 = 0 (0 dB) 78 4E 0x00 EQ CHA3 = 00 79 4F 0x15 VOD CHA3 = 1.0 V 80 50 0x60 DEM CHA3 = 0 (0 dB) 81 51 0x00 82 52 0x00 83 53 0x54 84 54 0x54 End Device 2, 3 - Address Offset 39 NOTE: CRC_EN = 0, Address Map = 1, >256 byte = 0, Device Count[3:0] = 3. This example has all 8 channels set to EQ = 00 (min boost), VOD = 1.0 V, DEM = 0 (0 dB) and multiple device can point to the same address map. Maximum EEPROM size is 8kbits (1024 x 8-bits). 8.5.2 Transfer of Data Via the SMBus During normal operation the data on SDA must be stable during the time when SCL is High. There are three unique states for the SMBus: START: A High-to-Low transition on SDA while SCL is High indicates a message START condition. 22 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 STOP: A Low-to-High transition on SDA while SCL is High indicates a message STOP condition. IDLE: If SCL and SDA are both High for a time exceeding tBUF from the last detected STOP condition or if they are High for a total exceeding the maximum specification for tHIGH then the bus will transfer to the IDLE state. 8.5.3 System Management Bus (SMBus) and Configuration Registers The System Management Bus interface is compatible to SMBus 2.0 physical layer specification. ENSMB = 1 kΩ to VDD to enable SMBus slave mode and allow access to the configuration registers. The DS125BR800 has the AD[3:0] inputs in SMBus mode. These pins are the user set SMBUS slave address inputs. The AD[3:0] pins have internal pull-down. When left floating or pulled low the AD[3:0] = 0000'b, the device default address byte is 0xB0. Based on the SMBus 2.0 specification, the DS125BR800 has a 7-bit slave address. The LSB is set to 0'b (for a WRITE). The device supports up to 16 address byte, which can be set with the AD[3:0] inputs. Table 9 shows the 16 addresses. Table 9. Device Slave Address Bytes AD[3:0] Settings Address Bytes (HEX) 0000 B0 0001 B2 0010 B4 0011 B6 0100 B8 0101 BA 0110 BC 0111 BE 1000 C0 1001 C2 1010 C4 1011 C6 1100 C8 1101 CA 1110 CC 1111 CE The SDA, SCL pins are 3.3 V tolerant, but are not 5 V tolerant. External pull-up resistor is required on the SDA. The resistor value can be from 1 kΩ to 5 kΩ depending on the voltage, loading and speed. The SCL may also require an external pull-up resistor and it depends on the Host that drives the bus. 8.5.4 SMBus Transactions The device supports WRITE and READ transactions. See Table 10 for register address, type (Read/Write, Read Only), default value and function information. 8.5.5 Writing a Register To 1. 2. 3. 4. 5. 6. 7. write a register, the following protocol is used (see SMBus 2.0 specification). The Host drives a START condition, the 7-bit SMBus address, and a "0" indicating a WRITE. The Device (Slave) drives the ACK bit ("0"). The Host drives the 8-bit Register Address. The Device drives an ACK bit ("0"). The Host drive the 8-bit data byte. The Device drives an ACK bit ("0"). The Host drives a STOP condition. The WRITE transaction is completed, the bus goes IDLE and communication with other SMBus devices may now occur. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 23 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com 8.5.6 Reading a Register To read a register, the following protocol is used (see SMBus 2.0 specification). 1. The Host drives a START condition, the 7-bit SMBus address, and a "0" indicating a WRITE. 2. The Device (Slave) drives the ACK bit ("0"). 3. The Host drives the 8-bit Register Address. 4. The Device drives an ACK bit ("0"). 5. The Host drives a START condition. 6. The Host drives the 7-bit SMBus Address, and a "1" indicating a READ. 7. The Device drives an ACK bit "0". 8. The Device drives the 8-bit data value (register contents). 9. The Host drives a NACK bit "1"indicating end of the READ transfer. 10. The Host drives a STOP condition. The READ transaction is completed, the bus goes IDLE and communication with other SMBus devices may now occur. 24 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 8.6 Register Maps Table 10. SMBUS Slave Mode Register Map Address Register Name Bit Field Type Default 0x00 Device Address Observation 7 Reserved R/W 0x00 EEPROM Bit Description 6:3 Address Bit AD[3:0] R Observation of AD[3:0] bit [6]: AD3 [5]: AD2 [4]: AD1 [3]: AD0 2 EEPROM Read Done R 1: Device completed the read from external EEPROM. 1:0 Reserved R/W Set bit to 0. Set bits to 0. 0x01 PWDN Channels 7:0 PWDN CHx R/W 0x00 0x02 Override PWDN Control 7:1 Reserved R/W 0x00 0 Override PWDN 0x03 Reserved 7:0 Reserved R/W 0x00 0x04 Reserved 7:0 Reserved R/W 0x00 0x05 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x05 Reserved 7:0 Reserved R/W 0x00 Reserved 0x06 Slave Register Control 7:5 Reserved R/W 0x10 4 Reserved 3 Register Enable 2:0 Reserved 7 Reserved 6 Reset Registers Self clearing bit, set to 1 to reset the register to default values 5 Reset SMBus Master Self clearing reset to SMBus master state machine 4:0 Reserved Set bits to 0 0001'b. 0x07 Digital Reset and Control Yes Power Down per Channel [7]: CH7 – CHA_3 [6]: CH6 – CHA_2 [5]: CH5 – CHA_1 [4]: CH4 – CHA_0 [3]: CH3 – CHB_3 [2]: CH2 – CHB_2 [1]: CH1 – CHB_1 [0]: CH0 – CHB_0 0x00 = all channels enabled 0xFF = all channels disabled Note: override PWDN pin. Set bits to 0. Yes 1: Block PWDN pin control 0: Allow PWDN pin control Set bits to 0 Yes Set bits to 0 Set bits to 0. Yes Set bit to 1. 1 = Enable SMBus Register Control 0 = Disable SMBus Register Control Note: In order to change VOD, DEM, and EQ of the channels in slave mode, this bit must be set to 1. Set bits to 0. R/W 0x01 Set bit to 0. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 25 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default EEPROM Bit Description 0x08 Override Pin Control 7 Reserved R/W 0x00 6 Override SD_TH Yes 1: Block SD_TH pin control 0: Allow SD_TH pin control 5 Reserved Yes Set bit to 0. 4 Override IDLE Yes 1: IDLE control by registers 0: IDLE control by signal detect 3 Override RXDET Yes 1: Block RXDET pin control 0: Allow RXDET pin control 2 Override MODE Yes 1: Block MODE pin control 0: Allow MODE pin control 1 Reserved Set bit to 0. Set bit to 0. 0 Reserved 0x09 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x0A Signal Detect Monitor 7:0 SD_TH Status R 0x00 CH7 - CH0 Internal Signal Detector Indicator [7]: CH7 - CHA_3 [6]: CH6 - CHA_2 [5]: CH5 - CHA_1 [4]: CH4 - CHA_0 [3]: CH3 - CHB_3 [2]: CH2 - CHB_2 [1]: CH1 - CHB_1 [0]: CH0 - CHB_0 0 = Signal detected at input (active data) 1 = Signal not detected at input (idle state) NOTE: These bits only function when RATE pin = FLOAT 0x0B Reserved 7 Reserved R/W 0x00 Set bits to 0 6:0 Reserved R/W 0x70 0x0C Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x0D CH0 - CHB0 Signal Detect 7:3 Reserved R/W 0x00 Set bits to 0. 2 SD Reset 1: Force signal detect "off" 0: Normal operation 1 SD Preset 1: Force signal detect "on" 0: Normal operation 0 Reserved Set bit to 0. 26 Set bit to 0. Yes Submit Documentation Feedback Set bits to 111 0000'b Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default EEPROM Bit Description 0x0E CH0 - CHB0 IDLE, RXDET 7:6 Reserved R/W 0x00 5 IDLE_AUTO Yes 1 = Allow IDLE_SEL control in bit 4 0 = Automatic IDLE detect Note: override IDLE control. 4 IDLE_SEL Yes 1: Output is MUTED (electrical idle) 0: Output is ON Note: override IDLE control. 3:2 RXDET Yes 00: Input is high-z impedance 01: Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω 10: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω 11: Input is 50 Ω Note: override RXDET pin. Set bits to 0. 1:0 Reserved 0x0F CH0 - CHB0 EQ 7:0 EQ Control R/W 0x2F Yes Set bits to 0. IB0 EQ Control - total of 256 levels. See Table 2. 0x10 CH0 - CHB0 VOD 7 Short Circuit Protection R/W 0xAD Yes 1: Enable the short circuit protection 0: Disable the short circuit protection 6 MODE_SEL Yes 1: PCIe Gen-1 or PCIe Gen-2 0: PCIe Gen-3 Note: override the MODE pin. 5:3 Reserved Yes Set bits to default value - 101. 2:0 VOD Control Yes OB0 VOD Control 000: 0.7 V 001: 0.8 V 010: 0.9 V 011: 1.0 V 100: 1.1 V 101: 1.2 V (default) 110: 1.3 V 111: 1.4 V Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 27 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default 0x11 CH0 - CHB0 DEM 7 RXDET STATUS R 0x02 6:5 MODE_DET STATUS R 4:3 Reserved R/W 2:0 DEM Control R/W 7:4 Reserved R/W 3:2 IDLE tha Yes Assert threshold 00 = 180 mVp-p (default) 01 = 160 mVp-p 10 = 210 mVp-p 11 = 190 mVp-p Note: override the SD_TH pin. 1:0 IDLE thd Yes De-Assert threshold 00 = 110 mVp-p (default) 01 = 100 mVp-p 10 = 150 mVp-p 11 = 130 mVp-p Note: override the SD_TH pin. 0x12 CH0 - CHB0 IDLE Threshold EEPROM Bit Description Observation bit for RXDET CH0 - CHB0. 1: RX = detected 0: RX = not detected Observation bit for MODE_DET CH0 - CHB0. 00: PCIe Gen-1 (2.5G) 01: PCIe Gen-2 (5G) 11: PCIe Gen-3 (8G+) Note: Only functions when MODE Pin = Automatic Set bits to 0. Yes 0x00 OB0 DEM Control 000: 0 dB 001: –1.5 dB 010: –3.5 dB (default) 011: –5 dB 100: –6 dB 101: –8 dB 110: –9 dB 111: –12 dB Set bits to 0. 0x13 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x14 CH1 - CHB1 Signal Detect 7:3 Reserved R/W 0x00 Set bits to 0. 2 SD Reset 1: Force signal detect "off" 0: Normal operation 1 SD Preset 1: Force signal detect "on" 0: Normal operation 0 Reserved Set bit to 0. 28 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default EEPROM Bit Description 0x15 CH1 - CHB1 IDLE, RXDET 7:6 Reserved R/W 0x00 5 IDLE_AUTO Yes 1 = Allow IDLE_SEL control in bit 4 0 = Automatic IDLE detect Note: override IDLE control. 4 IDLE_SEL Yes 1: Output is MUTED (electrical idle) 0: Output is ON Note: override IDLE control. 3:2 RXDET Yes 00: Input is high-z impedance 01: Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω 10: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω 11: Input is 50 Ω Note: override RXDET pin. Set bits to 0. 1:0 Reserved 0x16 CH1 - CHB1 EQ 7:0 EQ Control R/W 0x2F Yes Set bits to 0. IB1 EQ Control - total of 256 levels. See Table 2. 0x17 CH1 - CHB1 VOD 7 Short Circuit Protection R/W 0xAD Yes 1: Enable the short circuit protection 0: Disable the short circuit protection 6 MODE_SEL Yes 1: PCIe Gen-1 or PCIe Gen-2 0: PCIe Gen-3 Note: override the MODE pin. 5:3 Reserved Yes Set bits to default value - 101. 2:0 VOD Control Yes OB1 VOD Control 000: 0.7 V 001: 0.8 V 010: 0.9 V 011: 1.0 V 100: 1.1 V 101: 1.2 V (default) 110: 1.3 V 111: 1.4 V Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 29 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default 0x18 CH1 - CHB1 DEM 7 RXDET STATUS R 0x02 6:5 MODE_DET STATUS R 4:3 Reserved R/W 2:0 DEM Control R/W 7:4 Reserved R/W 3:2 IDLE tha Yes Assert threshold 00 = 180 mVp-p (default) 01 = 160 mVp-p 10 = 210 mVp-p 11 = 190 mVp-p Note: override the SD_TH pin. 1:0 IDLE thd Yes De-Assert threshold 00 = 110 mVp-p (default) 01 = 100 mVp-p 10 = 150 mVp-p 11 = 130 mVp-p Note: override the SD_TH pin. 0x19 CH1 - CHB1 IDLE Threshold EEPROM Bit Description Observation bit for RXDET CH1 - CHB1. 1: RX = detected 0: RX = not detected Observation bit forMODE_DET CH1 - CHB1. 00: PCIe Gen-1 (2.5G) 01: PCIe Gen-2 (5G) 11: PCIe Gen-3 (8G+) Note: Only functions when MODE Pin = Automatic Set bits to 0. Yes 0x00 OB1 DEM Control 000: 0 dB 001: –1.5 dB 010: –3.5 dB (default) 011: –5 dB 100: –6 dB 101: –8 dB 110: –9 dB 111: –12 dB Set bits to 0. 0x1A Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x1B CH2 - CHB2 Signal Detect 7:3 Reserved R/W 0x00 Set bits to 0. 2 SD Reset 1: Force signal detect "off" 0: Normal operation 1 SD Preset 1: Force signal detect "on" 0: Normal operation 0 Reserved Set bit to 0. 30 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default EEPROM Bit Description 0x1C CH2 - CHB2 IDLE, RXDET 7:6 Reserved R/W 0x00 5 IDLE_AUTO Yes 1 = Allow IDLE_SEL control in bit 4 0 = Automatic IDLE detect Note: override IDLE control. 4 IDLE_SEL Yes 1: Output is MUTED (electrical idle) 0: Output is ON Note: override IDLE control. 3:2 RXDET Yes 00: Input is high-z impedance 01: Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω 10: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω 11: Input is 50 Ω Note: override RXDET pin. Set bits to 0. 1:0 Reserved 0x1D CH2 - CHB2 EQ 7:0 EQ Control R/W 0x2F Yes Set bits to 0. IB2 EQ Control - total of 256 levels. See Table 2. 0x1E CH2 - CHB2 VOD 7 Short Circuit Protection R/W 0xAD Yes 1: Enable the short circuit protection 0: Disable the short circuit protection 6 MODE_SEL Yes 1: PCIe Gen-1 or PCIe Gen-2 0: PCIe Gen-3 Note: override the MODE pin. 5:3 Reserved Yes Set bits to default value - 101. 2:0 VOD Control Yes OB2 VOD Control 000: 0.7 V 001: 0.8 V 010: 0.9 V 011: 1.0 V 100: 1.1 V 101: 1.2 V (default) 110: 1.3 V 111: 1.4 V Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 31 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default 0x1F CH2 - CHB2 DEM 7 RXDET STATUS R 0x02 6:5 MODE_DET STATUS R 4:3 Reserved R/W 2:0 DEM Control R/W 7:4 Reserved R/W 3:2 IDLE tha Yes Assert threshold 00 = 180 mVp-p (default) 01 = 160 mVp-p 10 = 210 mVp-p 11 = 190 mVp-p Note: override the SD_TH pin. 1:0 IDLE thd Yes De-Assert threshold 00 = 110 mVp-p (default) 01 = 100 mVp-p 10 = 150 mVp-p 11 = 130 mVp-p Note: override the SD_TH pin. 0x20 CH2 - CHB2 IDLE Threshold EEPROM Bit Description Observation bit for RXDET CH2 - CHB2. 1: RX = detected 0: RX = not detected Observation bit for MODE_DET CH2 - CHB2. 00: PCIe Gen-1 (2.5G) 01: PCIe Gen-2 (5G) 11: PCIe Gen-3 (8G+) Note: Only functions when MODE Pin = Automatic Set bits to 0. Yes 0x00 OB2 DEM Control 000: 0 dB 001: –1.5 dB 010: –3.5 dB (default) 011: –5 dB 100: –6 dB 101: –8 dB 110: –9 dB 111: –12 dB Set bits to 0. 0x21 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x22 CH3 - CHB3 Signal Detect 7:3 Reserved R/W 0x00 Set bits to 0. 2 SD Reset 1: Force signal detect "off" 0: Normal operation 1 SD Preset 1: Force signal detect "on" 0: Normal operation 0 Reserved Set bit to 0. 32 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default EEPROM Bit Description 0x23 CH3 - CHB3 IDLE, RXDET 7:6 Reserved R/W 0x00 5 IDLE_AUTO Yes 1 = Allow IDLE_SEL control in bit 4 0 = Automatic IDLE detect Note: override IDLE control. 4 IDLE_SEL Yes 1: Output is MUTED (electrical idle) 0: Output is ON Note: override IDLE control. 3:2 RXDET Yes 00: Input is high-z impedance 01: Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω 10: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω 11: Input is 50 Ω Note: override RXDET pin. Set bits to 0. 1:0 Reserved 0x24 CH3 - CHB3 EQ 7:0 EQ Control R/W 0x2F Yes Set bits to 0. IB3 EQ Control - total of 256 levels. See Table 2. 0x25 CH3 - CHB3 VOD 7 Short Circuit Protection R/W 0xAD Yes 1: Enable the short circuit protection 0: Disable the short circuit protection 6 MODE_SEL Yes 1: PCIe Gen-1 or PCIe Gen-2 0: PCIe Gen-3 Note: override the MODE pin. 5:3 Reserved Yes Set bits to default value - 101. 2:0 VOD Control Yes OB0 VOD Control 000: 0.7 V 001: 0.8 V 010: 0.9 V 011: 1.0 V 100: 1.1 V 101: 1.2 V (default) 110: 1.3 V 111: 1.4 V Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 33 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default 0x26 CH3 - CHB3 DEM 7 RXDET STATUS R 0x02 6:5 MODE_DET STATUS R 4:3 Reserved R/W 2:0 DEM Control R/W 7:4 Reserved R/W 3:2 IDLE tha Yes Assert threshold 00 = 180 mVp-p (default) 01 = 160 mVp-p 10 = 210 mVp-p 11 = 190 mVp-p Note: override the SD_TH pin. 1:0 IDLE thd Yes De-Assert threshold 00 = 110 mVp-p (default) 01 = 100 mVp-p 10 = 150 mVp-p 11 = 130 mVp-p Note: override the SD_TH pin. 7:6 Reserved 5:4 High IDLE Yes Enable higher range of Signal Detect Thresholds [5]: CH0 - CH3 [4]: CH4 -CH7 3:2 Fast IDLE Yes Enable Fast OOB response [3]: CH0 - CH3 [2]: CH4 -CH7 1:0 Reduced SD Gain Yes Enable reduced Signal Detect Gain [1]: CH0 - CH3 [0]: CH4 -CH7 7:0 Reserved 0x27 0x28 0x29 34 CH3 - CHB3 IDLE Threshold Signal Detect Control Reserved R/W R/W EEPROM Bit Description Observation bit for RXDET CH3 - CHB3. 1: RX = detected 0: RX = not detected Observation bit for MODE_DET CH3 - CHB3. 00: PCIe Gen-1 (2.5G) 01: PCIe Gen-2 (5G) 11: PCIe Gen-3 (8G+) Note: Only functions when MODE Pin = Automatic Set bits to 0. Yes 0x00 OB3 DEM Control 000: 0 dB 001: –1.5 dB 010: –3.5 dB (default) 011: –5 dB 100: –6 dB 101: –8 dB 110: –9 dB 111: –12 dB Set bits to 0. 0x0C Set bits to 0. 0x00 Submit Documentation Feedback Set bits to 0 Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default 0x2A CH4 - CHA0 Signal Detect 7:3 Reserved R/W 0x00 2 SD Reset 1: Force signal detect "off" 0: Normal operation 1 SD Preset 1: Force signal detect "on" 0: Normal operation 0 Reserved 7:6 Reserved 5 IDLE_AUTO Yes 1 = Allow IDLE_SEL control in bit 4 0 = Automatic IDLE detect Note: override IDLE control. 4 IDLE_SEL Yes 1: Output is MUTED (electrical idle) 0: Output is ON Note: override IDLE control. 3:2 RXDET Yes 00: Input is high-z impedance 01: Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω 10: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω 11: Input is 50 Ω Note: override RXDET pin. 1:0 Reserved 0x2B CH4 - CHA0 IDLE, RXDET EEPROM Bit Description Set bits to 0. Set bit to 0. R/W 0x00 Set bits to 0. Set bits to 0. 0x2C CH4 - CHA0 EQ 7:0 EQ Control R/W 0x2F Yes IA0 EQ Control - total of 256 levels. See Table 2. 0x2D CH4 - CHA0 VOD 7 Short Circuit Protection R/W 0xAD Yes 1: Enable the short circuit protection 0: Disable the short circuit protection 6 MODE_SEL Yes 1: PCIe Gen-1 or PCIe Gen-2 0: PCIe Gen-3 Note: override the MODE pin. 5:3 Reserved Yes Set bits to default value - 101. 2:0 VOD Control Yes OA0 VOD Control 000: 0.7 V 001: 0.8 V 010: 0.9 V 011: 1.0 V 100: 1.1 V 101: 1.2 V (default) 110: 1.3 V 111: 1.4 V Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 35 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default 0x2E CH4 - CHA0 DEM 7 RXDET STATUS R 0x02 6:5 MODE_DET STATUS R 4:3 Reserved R/W 2:0 DEM Control R/W 7:4 Reserved R/W 3:2 IDLE tha Yes Assert threshold 00 = 180 mVp-p (default) 01 = 160 mVp-p 10 = 210 mVp-p 11 = 190 mVp-p Note: override the SD_TH pin. 1:0 IDLE thd Yes De-Assert threshold 00 = 110 mVp-p (default) 01 = 100 mVp-p 10 = 150 mVp-p 11 = 130 mVp-p Note: override the SD_TH pin. 0x2F CH4 - CHA0 IDLE Threshold EEPROM Bit Description Observation bit for RXDET CH4 - CHA0. 1: RX = detected 0: RX = not detected Observation bit for MODE_DET CH4 - CHA0. 00: PCIe Gen-1 (2.5G) 01: PCIe Gen-2 (5G) 11: PCIe Gen-3 (8G+) Note: Only functions when MODE Pin = Automatic Set bits to 0. Yes 0x00 OA0 DEM Control 000: 0 dB 001: –1.5 dB 010: –3.5 dB (default) 011: –5 dB 100: –6 dB 101: –8 dB 110: –9 dB 111: –12 dB Set bits to 0. 0x30 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x31 CH5 - CHA1 Signal Detect 7:3 Reserved R/W 0x00 Set bits to 0. 2 SD Reset 1: Force signal detect "off" 0: Normal operation 1 SD Preset 1: Force signal detect "on" 0: Normal operation 0 Reserved Set bit to 0. 36 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default EEPROM Bit Description 0x32 CH5 - CHA1 IDLE, RXDET 7:6 Reserved R/W 0x00 5 IDLE_AUTO Yes 1 = Allow IDLE_SEL control in bit 4 0 = Automatic IDLE detect Note: override IDLE control. 4 IDLE_SEL Yes 1: Output is MUTED (electrical idle) 0: Output is ON Note: override IDLE control. 3:2 RXDET Yes 00: Input is high-z impedance 01: Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω 10: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω 11: Input is 50 Ω Note: override RXDET pin. Set bits to 0. 1:0 Reserved 0x33 CH5 - CHA1 EQ 7:0 EQ Control R/W 0x2F Yes Set bits to 0. IA1 EQ Control - total of 256 levels. See Table 2. 0x34 CH5 - CHA1 VOD 7 Short Circuit Protection R/W 0xAD Yes 1: Enable the short circuit protection 0: Disable the short circuit protection 6 MODE_SEL Yes 1: PCIe Gen-1 or PCIe Gen-2 0: PCIe Gen-3 Note: override the MODE pin. 5:3 Reserved Yes Set bits to default value - 101. 2:0 VOD Control Yes OA1 VOD Control 000: 0.7 V 001: 0.8 V 010: 0.9 V 011: 1.0 V 100: 1.1 V 101: 1.2 V (default) 110: 1.3 V 111: 1.4 V Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 37 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default 0x35 CH5 - CHA1 DEM 7 RXDET STATUS R 0x02 6:5 MODE_DET STATUS R 4:3 Reserved R/W 2:0 DEM Control R/W 7:4 Reserved R/W 3:2 IDLE tha Yes Assert threshold 00 = 180 mVp-p (default) 01 = 160 mVp-p 10 = 210 mVp-p 11 = 190 mVp-p Note: override the SD_TH pin. 1:0 IDLE thd Yes De-Assert threshold 00 = 110 mVp-p (default) 01 = 100 mVp-p 10 = 150 mVp-p 11 = 130 mVp-p Note: override the SD_TH pin. 0x36 CH5 - CHA1 IDLE Threshold EEPROM Bit Description Observation bit for RXDET CH5 - CHA1. 1: RX = detected 0: RX = not detected Observation bit for MODE_DET CH5 - CHA1. 00: PCIe Gen-1 (2.5G) 01: PCIe Gen-2 (5G) 11: PCIe Gen-3 (8G+) Note: Only functions when MODE Pin = Automatic Set bits to 0. Yes 0x00 OA1 DEM Control 000: 0 dB 001: –1.5 dB 010: –3.5 dB (default) 011: –5 dB 100: –6 dB 101: –8 dB 110: –9 dB 111: –12 dB Set bits to 0. 0x37 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x38 CH6 - CHA2 Signal Detect 7:3 Reserved R/W 0x00 Set bits to 0. 2 SD Reset 1: Force signal detect "off" 0: Normal operation 1 SD Preset 1: Force signal detect "on" 0: Normal operation 0 Reserved Set bit to 0. 38 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default EEPROM Bit Description 0x39 CH6 - CHA2 IDLE, RXDET 7:6 Reserved R/W 0x00 5 IDLE_AUTO Yes 1 = Allow IDLE_SEL control in bit 4 0 = Automatic IDLE detect Note: override IDLE control. 4 IDLE_SEL Yes 1: Output is MUTED (electrical idle) 0: Output is ON Note: override IDLE control. 3:2 RXDET Yes 00: Input is high-z impedance 01: Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω 10: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω 11: Input is 50 Ω Note: override RXDET pin. Set bits to 0. 1:0 Reserved 0x3A CH6 - CHA2 EQ 7:0 EQ Control R/W 0x2F Yes Set bits to 0. IA2 EQ Control - total of 256 levels. See Table 2. 0x3B CH6 - CHA2 VOD 7 Short Circuit Protection R/W 0xAD Yes 1: Enable the short circuit protection 0: Disable the short circuit protection 6 MODE_SEL Yes 1: PCIe Gen-1 or PCIe Gen-2 0: PCIe Gen-3 Note: override the MODE pin. 5:3 Reserved Yes Set bits to default value - 101. 2:0 VOD Control Yes OA2 VOD Control 000: 0.7 V 001: 0.8 V 010: 0.9 V 011: 1.0 V 100: 1.1 V 101: 1.2 V (default) 110: 1.3 V 111: 1.4 V Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 39 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default 0x3C CH6 - CHA2 DEM 7 RXDET STATUS R 0x02 6:5 MODE_DET STATUS R 4:3 Reserved R/W 2:0 DEM Control R/W 7:4 Reserved R/W 3:2 IDLE tha Yes Assert threshold 00 = 180 mVp-p (default) 01 = 160 mVp-p 10 = 210 mVp-p 11 = 190 mVp-p Note: override the SD_TH pin. 1:0 IDLE thd Yes De-Assert threshold 00 = 110 mVp-p (default) 01 = 100 mVp-p 10 = 150 mVp-p 11 = 130 mVp-p Note: override the SD_TH pin. 0x3D CH6 - CHA2 IDLE Threshold EEPROM Bit Description Observation bit for RXDET CH6 - CHA2. 1: RX = detected 0: RX = not detected Observation bit for MODE_DET CH6 - CHA2. 00: PCIe Gen-1 (2.5G) 01: PCIe Gen-2 (5G) 11: PCIe Gen-3 (8G+) Note: Only functions when MODE Pin = Automatic Set bits to 0. Yes 0x00 OA2 DEM Control 000: 0 dB 001: –1.5 dB 010: –3.5 dB (default) 011: –5 dB 100: –6 dB 101: –8 dB 110: –9 dB 111: –12 dB Set bits to 0. 0x3E Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x3F CH0 - CHB0 Signal Detect 7:3 Reserved R/W 0x00 Set bits to 0. 2 SD Reset 1: Force signal detect "off" 0: Normal operation 1 SD Preset 1: Force signal detect "on" 0: Normal operation 0 Reserved Set bit to 0. 40 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default EEPROM Bit Description 0x40 CH7 - CHA3 IDLE, RXDET 7:6 Reserved R/W 0x00 5 IDLE_AUTO Yes 1 = Allow IDLE_SEL control in bit 4 0 = Automatic IDLE detect Note: override IDLE control. 4 IDLE_SEL Yes 1: Output is MUTED (electrical idle) 0: Output is ON Note: override IDLE control. 3:2 RXDET Yes 00: Input is high-z impedance 01: Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω 10: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω 11: Input is 50 Ω Note: override RXDET pin. Set bits to 0. 1:0 Reserved 0x41 CH7 - CHA3 EQ 7:0 EQ Control R/W 0x2F Yes Set bits to 0. IA3 EQ Control - total of 256 levels. See Table 2. 0x42 CH7 - CHA3 VOD 7 Short Circuit Protection R/W 0xAD Yes 1: Enable the short circuit protection 0: Disable the short circuit protection 6 MODE_SEL Yes 1: PCIe Gen-1 or PCIe Gen-2 0: PCIe Gen-3 Note: override the MODE pin. 5:3 Reserved Yes Set bits to default value - 101. 2:0 VOD Control Yes OA3 VOD Control 000: 0.7 V 001: 0.8 V 010: 0.9 V 011: 1.0 V 100: 1.1 V 101: 1.2 V (default) 110: 1.3 V 111: 1.4 V Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 41 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default 0x43 CH7 - CHA3 DEM 7 RXDET STATUS R 0x02 6:5 MODE_DET STATUS R 4:3 Reserved R/W 2:0 DEM Control R/W 7:4 Reserved R/W 3:2 IDLE tha Yes Assert threshold 00 = 180 mVp-p (default) 01 = 160 mVp-p 10 = 210 mVp-p 11 = 190 mVp-p Note: override the SD_TH pin. 1:0 IDLE thd Yes De-Assert threshold 00 = 110 mVp-p (default) 01 = 100 mVp-p 10 = 150 mVp-p 11 = 130 mVp-p Note: override the SD_TH pin. 0x44 CH7 - CHA3 IDLE Threshold EEPROM Bit Description Observation bit for RXDET CH7 - CHA3. 1: RX = detected 0: RX = not detected Observation bit for MODE_DET CH7 - CHA3. 00: PCIe Gen-1 (2.5G) 01: PCIe Gen-2 (5G) 11: PCIe Gen-3 (8G+) Note: Only functions when MODE Pin = Automatic Set bits to 0. Yes 0x00 OA3 DEM Control 000: 0 dB 001: –1.5 dB 010: –3.5 dB (default) 011: –5 dB 100: –6 dB 101: –8 dB 110: –9 dB 111: –12 dB Set bits to 0. 0x45 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x46 Reserved 7:0 Reserved R/W 0x38 Set bits to 0x38 0x47 Reserved 7:4 Reserved R/W 0x00 Set bits to 0 3:0 Reserved R/W 0x48 Reserved 7:6 Reserved R/W 5:0 Reserved R/W 0x05 Yes Set bits to 0 Yes Set bits to 0 Set bits to 00 0101'b 0x49 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x4A Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x4B Reserved 7:0 Reserved R/W 0x00 Set bits to 0 42 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Register Maps (continued) Table 10. SMBUS Slave Mode Register Map (continued) Address Register Name Bit Field Type Default EEPROM Bit Description 0x4C Reserved 7:3 Reserved R/W 0x00 Yes Set bits to 0 2:1 Reserved R/W 0 Reserved R/W Set bits to 0 Yes Set bits to 0 0x4D Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x4E Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x4F Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x50 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x51 Device ID 7:5 VERSION R 0x45 010'b 4:0 ID 00101'b 0x52 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x53 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x54 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x55 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x56 Reserved 7:0 Reserved R/W 0x10 Set bits to 0x10 0x57 Reserved 7:0 Reserved R/W 0x64 Set bits to 0x64 0x58 Reserved 7:0 Reserved R/W 0x21 Set bits to 0x21 0x59 Reserved 7:1 Reserved R/W 0x00 Set bits to 0 0 Reserved Yes Set bit to 0 0x5A Reserved 7:0 Reserved R/W 0x54 Yes Set bits to 0x54 0x5B Reserved 7:0 Reserved R/W 0x54 Yes Set bits to 0x54 0x5C Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x5D Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x5E Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x5F Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x60 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 0x61 Reserved 7:0 Reserved R/W 0x00 Set bits to 0 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 43 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The DS125BR800 is a high performance circuit capable of delivering excellent performance. Careful attention must be paid to the details associated with high-speed design as well as providing a clean power supply. Refer to Layout Guidelines and the LVDS Owner's Manual, SNLA187, for more detailed information on high speed design tips to address signal integrity design issues. 9.2 Typical Application 8 TX Connector ASIC or PCIe EP 8 RX DS125BR800 8 RX System Board Root Complex DS125BR800 Connector 8 TX ard Bo ce Tra Figure 9. Typical Application 9.2.1 Design Requirements As with any high speed design, there are many factors which influence the overall performance. Below are a list of critical areas for consideration and study during design. • Use 100 Ω impedance traces. Generally these are very loosely coupled to ease routing length differences. • Place AC-coupling capacitors near to the receiver end of each channel segment to minimize reflections. • The maximum body size for AC-coupling capacitors is 0402. • Back-drill connector vias and signal vias to minimize stub length. • Use Reference plane vias to ensure a low inductance path for the return current. 9.2.2 Detailed Design Procedure The DS125BR800 is designed to be placed at a location where the input CTLE can help to compensate for a portion of the overall channel attenuation. In order to optimize performance, the repeater requires tuning to extend the reach of the cable or trace length while also recovering a solid eye opening. To tune the repeater, the settings mentioned in Table 2 and Table 3 (for Pin Mode) are recommended as a default starting point for most applications. Once these settings are configured, additional tuning of the EQ and, to a lesser extent, VOD may be required to optimize the repeater performance for each specific application environment. Examples of the repeater performance as a generic high speed datapath repeater are illustrated in the performance curves in the next section. 44 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Typical Application (continued) Pattern Generator VID = 1.0 Vp-p DE = 0 dB PRBS15 TL Lossy Channel IN DS125BR800 OUT Scope BW = 60 GHz Figure 10. Test Setup Connections Diagram Pattern Generator VID = 1.0 Vp-p DE = –6 dB PRBS15 Tl1 Lossy Channel IN DS125BR800 OUT Tl2 Lossy Channel Scope BW = 60 GHz Figure 11. Test Setup Connections Diagram 9.2.3 Application Curves DS125BR800 settings: EQ[1:0] = 0, F = 0x02, DEM[1:0] = 0, 1 Figure 12. TL = 10 inch 5–mil FR4 trace, 5 Gbps DS125BR800 settings: EQ[1:0] = 0, F = 0x02, DEM[1:0] = 0, 1 Figure 13. TL = 10 inch 5–mil FR4 trace, 8 Gbps DS125BR800 settings: EQ[1:0] = 0, R = 0x01, DEM[1:0] = 0, 1 Figure 14. TL = 10 inch 5–mil FR4 trace, 12 Gbps DS125BR800 settings: EQ[1:0] = 0, 1 = 0x03, DEM[1:0] = 0, 1 Figure 15. TL = 20 inch 5–mil FR4 trace, 5 Gbps Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 45 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com Typical Application (continued) DS125BR800 settings: EQ[1:0] = 0, 1 = 0x03, DEM[1:0] = 0, 1 Figure 16. TL = 20 inch 5–mil FR4 trace, 8 Gbps DS125BR800 settings: EQ[1:0] = 0, 1 = 0x03, DEM[1:0] = 0, 1 Figure 17. TL = 20 inch 5–mil FR4 trace, 12 Gbps DS125BR800 settings: EQ[1:0] = R, 0 = 0x07, DEM[1:0] = 0, 1 Figure 18. TL = 30 inch 5–mil FR4 trace, 5 Gbps DS125BR800 settings: EQ[1:0] = R, 0 = 0x07, DEM[1:0] = 0, 1 Figure 19. TL = 30 inch 5–mil FR4 trace, 8 Gbps DS125BR800 settings: EQ[1:0] = R, 0 = 0x07, DEM[1:0] = 0, 1 Figure 20. TL = 30 inch 5–mil FR4 trace, 12 Gbps DS125BR800 settings: EQ[1:0] = R, 0 = 0x07, DEM[1:0] = 0, 1 Figure 21. TL1 = 5-meter 30-AWG 100 Ω Twin-axial Cable, 12 Gbps 46 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 Typical Application (continued) DS125BR800 settings: EQ[1:0] = R, 1 = 0x0F, DEM[1:0] = 0, 1 Figure 22. TL1 = 8-meter 30-AWG 100 Ω Twin-axial Cable, 12 Gbps DS125BR800 settings: EQ[1:0] = 0, 1 = 0x03, DEM[1:0] = R, 0 Figure 23. TL1 = 20 inch 5–mil FR4 trace, TL2 = 10 inch 5–mil FR4 trace, 5 Gbps DS125BR800 settings: EQ[1:0] = R, 1 = 0x0F, DEM[1:0] = R, 0 Figure 24. TL1 = 20 inch 5–mil FR4 trace, TL2 = 10 inch 5–mil FR4 trace, 8 Gbps DS125BR800 settings: EQ[1:0] = R, 1 = 0x0F, DEM[1:0] = R, 0 Figure 25. TL1 = 20 inch 5–mil FR4 trace, TL2 = 10 inch 5–mil FR4 trace, 12 Gbps Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 47 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com 10 Power Supply Recommendations 10.1 3.3-V or 2.5-V Supply Mode Operation The DS125BR800 has an optional internal voltage regulator to provide the 2.5-V supply to the device. In 3.3-V mode operation, the VIN pin = 3.3 V is used to supply power to the device. The internal regulator will provide the 2.5 V to the VDD pins of the device and a 0.1-µF cap is needed at each of the 5 VDD pins for power supply decoupling (total capacitance should be ≤0.5 µF), and the VDD pins should be left open. The VDD_SEL pin must be tied to GND to enable the internal regulator. In 2.5-V mode operation, the VIN pin should be left open and 2.5V supply must be applied to the 5 VDD pins to power the device. The VDD_SEL pin must be left open (no connect) to disable the internal regulator. The DS125BR800 has an optional internal voltage regulator to provide the 2.5 V supply to the device. In 3.3-V Mode operation, the VIN pin = 3.3 V is used to supply power to the device. The internal regulator will provide the 2.5 V to the VDD pins of the device and a 0.1-µF cap is needed at each of the 5 VDD pins for power supply decoupling (total capacitance should be ≤0.5 µF), and the VDD pins should be left open. The VDD_SEL pin must be tied to GND to enable the internal regulator. In 2.5-V Mode operation, the VIN pin should be left open and 2.5V supply must be applied to the 5 VDD pins to power the device. The VDD_SEL pin must be left open (no connect) to disable the internal regulator. 3.3-V mode 2.5-V mode VDD_SEL Enable VDD_SEL open VIN open Disable 3.3 V 1 uF VIN 10 uF Internal voltage regulator 2.5 V VDD VDD 0.1 uF 0.1 uF VDD VDD 0.1 uF 0.1 uF 1 uF 2.5V Capacitors can be either tantalum or an ultra-low ESR ceramic. 10 uF Internal voltage regulator Capacitors can be either tantalum or an ultra-low ESR ceramic. VDD VDD 0.1 uF 0.1 uF VDD VDD 0.1 uF 0.1 uF VDD VDD 0.1 uF 0.1 uF Place 0.1 uF close to VDD Pin Total capacitance should be ~ 0.5 uF Place capcitors close to VDD Pin Figure 26. 3.3-V or 2.5-V Supply Connection Diagram 48 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 10.2 Power Supply Bypassing Two approaches are recommended to ensure that the DS125BR800 is provided with an adequate power supply. First, the supply (VDD) and ground (GND) pins should be connected to power planes routed on adjacent layers of the printed circuit board. The layer thickness of the dielectric should be minimized so that the VDD and GND planes create a low inductance supply with distributed capacitance. Second, careful attention to supply bypassing through the proper use of bypass capacitors is required. A 0.1-µF bypass capacitor should be connected to each VDD pin such that the capacitor is placed as close as possible to the DS125BR800. Smaller body size capacitors can help facilitate proper component placement. Additionally, capacitor with capacitance in the range of 1 µF to 10 µF should be incorporated in the power supply bypassing design as well. These capacitors can be either tantalum or an ultra-low ESR ceramic. 11 Layout 11.1 Layout Guidelines The CML inputs and LPDS outputs have been optimized to work with interconnects using a controlled differential impedance of 85 - 100 Ω. It is preferable to route differential lines exclusively on one layer of the board, particularly for the input traces. The use of vias should be avoided if possible. If vias must be used, they should be used sparingly and must be placed symmetrically for each side of a given differential pair. Whenever differential vias are used the layout must also provide for a low inductance path for the return currents as well. Route the differential signals away from other signals and noise sources on the printed circuit board. See AN1187 for additional information on LLP packages. Figure 27 depicts different transmission line topologies which can be used in various combinations to achieve the optimal system performance. Impedance discontinuities at the differential via can be minimized or eliminated by increasing the swell around each hole and providing for a low inductance return current path. When the via structure is associated with thick backplane PCB, further optimization such as back drilling is often used to reduce the deterimential high frequency effects of stubs on the signal path. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 49 DS125BR800 SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 www.ti.com 11.2 Layout Example 20 mils EXTERNAL MICROSTRIP 100 mils 20 mils INTERNAL STRIPLINE VDD VDD 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 19 54 20 53 21 52 51 22 BOTTOM OF PKG 23 VDD 50 GND 24 49 25 48 26 47 27 46 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 VDD VDD Figure 27. Typical Routing Options 50 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 DS125BR800 www.ti.com SNLS426E – AUGUST 2012 – REVISED JANUARY 2015 12 Device and Documentation Support 12.1 Documentation Support 12.1.1 Related Documentation • • • Absolute Maximum Ratings for Soldering, SNOA549 LVDS Owner's Manual, SNLA187 Understanding EEPROM Programming for High Speed Repeaters and Mux Buffers, SNLA228 12.2 Trademarks All trademarks are the property of their respective owners. 12.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: DS125BR800 51 PACKAGE OPTION ADDENDUM www.ti.com 9-Sep-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) DS125BR800SQ/NOPB ACTIVE WQFN NJY 54 2000 Green (RoHS & no Sb/Br) CU SN Level-2-260C-1 YEAR DS125BR800SQ DS125BR800SQE/NOPB ACTIVE WQFN NJY 54 250 Green (RoHS & no Sb/Br) CU SN Level-2-260C-1 YEAR DS125BR800SQ (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 9-Sep-2014 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 9-Sep-2014 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant DS125BR800SQ/NOPB WQFN NJY 54 2000 330.0 16.4 5.8 10.3 1.0 12.0 16.0 Q1 DS125BR800SQE/NOPB WQFN NJY 54 250 178.0 16.4 5.8 10.3 1.0 12.0 16.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 9-Sep-2014 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS125BR800SQ/NOPB WQFN NJY 54 2000 367.0 367.0 38.0 DS125BR800SQE/NOPB WQFN NJY 54 250 213.0 191.0 55.0 Pack Materials-Page 2 PACKAGE OUTLINE NJY0054A WQFN SCALE 2.000 WQFN 5.6 5.4 B A PIN 1 INDEX AREA 0.5 0.3 0.3 0.2 10.1 9.9 DETAIL OPTIONAL TERMINAL TYPICAL 0.8 MAX C SEATING PLANE 2X 4 SEE TERMINAL DETAIL 3.51±0.1 19 (0.1) 27 28 18 50X 0.5 7.5±0.1 2X 8.5 1 45 54 PIN 1 ID (OPTIONAL) 46 54X 54X 0.5 0.3 0.3 0.2 0.1 0.05 C A C B 4214993/A 07/2013 NOTES: 1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance. www.ti.com EXAMPLE BOARD LAYOUT NJY0054A WQFN WQFN (3.51) SYMM 54X (0.6) 54 54X (0.25) SEE DETAILS 46 1 45 50X (0.5) (7.5) SYMM (9.8) (1.17) TYP 2X (1.16) 28 18 ( 0.2) TYP VIA 19 27 (1) TYP (5.3) LAND PATTERN EXAMPLE SCALE:8X 0.07 MIN ALL AROUND 0.07 MAX ALL AROUND METAL SOLDER MASK OPENING SOLDER MASK OPENING NON SOLDER MASK DEFINED (PREFERRED) METAL SOLDER MASK DEFINED SOLDER MASK DETAILS 4214993/A 07/2013 NOTES: (continued) 4. This package is designed to be soldered to a thermal pad on the board. For more information, refer to QFN/SON PCB application note in literature No. SLUA271 (www.ti.com/lit/slua271). www.ti.com EXAMPLE STENCIL DESIGN NJY0054A WQFN WQFN SYMM METAL TYP (0.855) TYP 46 54 54X (0.6) 54X (0.25) 1 45 50X (0.5) (1.17) TYP SYMM (9.8) 12X (0.97) 18 28 19 27 12X (1.51) (5.3) SOLDERPASTE EXAMPLE BASED ON 0.125mm THICK STENCIL EXPOSED PAD 67% PRINTED SOLDER COVERAGE BY AREA SCALE:10X 4214993/A 07/2013 NOTES: (continued) 5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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