Renesas CR5AS-12AC05 600v - 5a - thyristor medium power use Datasheet

Preliminary Datasheet
CR5AS-12A
600V - 5A - Thyristor
Medium Power Use
R07DS0332EJ0300
Rev.3.00
Jan 23, 2013
Features
 Non-Insulated Type
 Plannar Type
 IT (AV) : 5 A
 VDRM : 600 V
 IGT : 100 A
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
PRSS0004ZD-D
(Package name: DPAK(L)-(3))
4
4
2, 4
12
3
3
1
2
1
1.
2.
3.
4.
Cathode
Anode
Gate
Anode
3
Applications
Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for
autocycle, electric tool, strobe flasher, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Notes: 1. With gate to cathode resistance RGK = 220 .
R07DS0332EJ0300 Rev.3.00
Jan 23, 2013
Page 1 of 8
CR5AS-12A
Parameter
RMS on-state current
Average on-state current
Preliminary
Symbol
IT (RMS)
IT (AV)
Ratings
7.8
5
Unit
A
A
ITSM
90
A
I2t
33
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
—
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
0.32
0.36
W
W
V
V
A
°C
°C
g
g
Symbol
Min.
Typ.
Max.
Unit
Repetitive peak reverse current
IRRM
—
—
1.0
mA
Tj = 125°C, VRRM applied,
RGK = 220 
Repetitive peak off-state current
IDRM
—
—
1.0
mA
Tj = 125°C, VDRM applied,
RGK = 220 
On-state voltage
VTM
—
—
1.8
V
Gate trigger voltage
Gate non-trigger voltage
VGT
VGD
—
0.1
—
—
0.8
—
V
V
Gate trigger current
Holding current
IGT
IH
1
—
—
3.5
100
—
A
mA
Thermal resistance
Rth (j-c)
—
—
3.0
°C/W
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
MP-3A, Typical value
DPAK(L)-(3), Typical value
Electrical Characteristics
Parameter
Test conditions
Tc = 25°C, ITM = 15 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 125°C, VD = 1/2 VDRM,
RGK = 220 
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 25°C, VD = 12 V,
RGK = 220 
Junction to caseNote2
Notes: 2. The measurement point for case temperature is at anode tab.
R07DS0332EJ0300 Rev.3.00
Jan 23, 2013
Page 2 of 8
CR5AS-12A
Preliminary
Performance Curves
Maximum On-State Characteristics
100
Tc = 25°C
Surge On-State Current (A)
On-State Current (A)
102
Rated Surge On-State Current
101
100
10−1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
× 100 (%)
VGD = 0.1V
10−1
100
101
102
Gate Trigger Voltage (V)
101
102
103
VD = 6V
RL = 60Ω
102
101
Typical Example
100
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
1.0
Typical Distribution
0.8
0.6
Typical Example
0.2
VD = 6V
RL = 60Ω
–40
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
10−1
0
40
80
120
Junction Temperature (°C)
R07DS0332EJ0300 Rev.3.00
Jan 23, 2013
160
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
PGM = 0.5W
IGT = 100µA IFGM = 0.3A
(Tj = 25°C)
0
0
100
Gate Trigger Current vs.
Junction Temperature
VGT = 0.8V
0.4
20
Gate Characteristics
VFGM = 6V
10−2
40
Conduction Time (Cycles at 60Hz)
PG(AV) = 0.1W
100
60
On-State Voltage (V)
102
101
80
100
103
101
102
103
Junction to ambient
102
101
100 −3
10
Junction to case
10−2
10−1
100
Time (s)
Page 3 of 8
CR5AS-12A
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
14
90° 120°
12
60°
10
8
6
θ = 30°
θ
4
360°
2
0
160
180°
Case Temperature (°C)
Average Power Dissipation (W)
16
1
2
3
4
5
6
7
Resistive,
inductive loads
100
80
60
40
0
8
θ = 30°
90°
0
1
2
3
180°
120°
4
5
6
7
8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
140
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
θ = 30°
40
60°
90°
120°
20
180°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Ambient Temperature (°C)
160
140
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
θ = 30°
60°
90°
20
120°
180°
0
0
2
1
Aluminum Board
80×80×t2.3
40
3
4
5
6
8
7
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
16
160
14
140
θ
120
360°
Resistive loads
θ
12
θ
Case Temperature (°C)
Ambient Temperature (°C)
360°
60°
160
Average Power Dissipation (W)
θ
120
20
Resistive,
inductive loads
0
140
180°
360°
10 Resistive
loads
8
90°
θ = 30° 60°
120°
6
4
2
0
100
80
60
40
θ = 30°
20
0
1
2
3
4
5
6
7
Average On-State Current (A)
R07DS0332EJ0300 Rev.3.00
Jan 23, 2013
8
θ
0
0
1
2
60° 90° 120° 180°
3
4
5
6
8
7
Average On-State Current (A)
Page 4 of 8
CR5AS-12A
Preliminary
160
140
140
θ
360°
Resistive loads
Natural convection
100
80
60 θ = 30°
60°
40
90°
120°
20
180°
0
θ
Resistive loads
Natural convection
100
80
θ = 30°
60°
90°
120°
180°
60
40
20
0
1
2
3
4
5
6
7
Average On-State Current (A)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Gate to Cathode Resistance
Typical Example
RGK = 220Ω
140
120
100
80
60
40
20
160
θ
360°
Average On-State Current (A)
160
0
–40
Aluminum Board
80×80×t2.3
120
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
40
80
120
160
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 220Ω) × 100 (%)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
θ
120
Ambient Temperature (°C)
160
0
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
8
103
Typical Example
Tj = 125°C
102
101
100 −2
10
10−1
100
101
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
Typical Example
140
102
Tj = 125°C
RGK = 220Ω
VD = 12V
RGK = 220Ω
Holding Current (mA)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
120
100
80
60
40
Typical Distribution
103
100
Typical Example
20
0
100
101
102
103
Rate of Rise of Off-State Voltage (V/μs)
R07DS0332EJ0300 Rev.3.00
Jan 23, 2013
10−1
–40
0
40
80
120
160
Junction Temperature (°C)
Page 5 of 8
Preliminary
400
Tj = 25°C
Typical Example
300
200
100
0
10−2
10−1
100
101
Gate to Cathode Resistance (kΩ)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Holding Current (RGK = rΩ)
Holding Current (RGK = 220Ω)
× 100 (%)
Holding Current vs.
Gate to Cathode Resistance
× 100 (%)
CR5AS-12A
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
× 100 (%)
104
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
102
VD = 6V
RL = 60Ω
Ta = 25°C
101 0
10
101
102
103
Gate Current Pulse Width (μs)
R07DS0332EJ0300 Rev.3.00
Jan 23, 2013
Page 6 of 8
CR5AS-12A
Preliminary
Package Dimensions
Previous Code
TMP3
0.76 ± 0.2
Unit: mm
2.3
0.5 ± 0.2
0.1 ± 0.1
2.5Min
1Max
6.1 ± 0.2
6.6
5.3 ± 0.2
MASS[Typ.]
0.32g
1.4 ± 0.2
RENESAS Code
PRSS0004ZG-A
1 ± 0.2
JEITA Package Code
SC-63
10.4Max
Package Name
MP-3A
0.76
0.5 ± 0.2
Package Name
DPAK(L)-(3)
JEITA Package Code
⎯
1
2.3
2.3 ± 0.2
RENESAS Code
PRSS0004ZD-D
Previous Code
DPAK(L)-(3)/DPAK(L)-(3)V
MASS[Typ.]
0.36g
Unit: mm
6.5 ± 0.5
2.3 ± 0.2
5.4 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
(1.3)
1.15 ± 0.1
0.8 ± 0.1
0.6 ± 0.1
0.6 ± 0.1
4.7 ± 0.5
6.9 ± 0.5
5.5 ± 0.5
8.2 ± 0.6
0.55 ± 0.1
0.55 ± 0.1
0.55 ± 0.1
2.29
R07DS0332EJ0300 Rev.3.00
Jan 23, 2013
2.29
0.55 ± 0.1
Page 7 of 8
CR5AS-12A
Preliminary
Ordering Information
Orderable Part Number
CR5AS-12A#B01
CR5AS-12A#C04
CR5AS-12A#C05
CR5AS-12A-T13#B01
CR5AS-12A-T13#C04
CR5AS-12A-T13#C05
CR5AS-12A-A1#B00
CR5AS-12A-BA1#B00
CR5AS-12A-EA1#B00
Packing
Tube
Tube
Tube
Embossed Tape
Embossed Tape
Embossed Tape
Tube
Tube
Tube
Quantity
75 pcs.
75 pcs.
75 pcs.
3000 pcs.
3000 pcs.
3000 pcs.
80 pcs.
80 pcs.
80 pcs.
Package
MP-3A
MP-3A
MP-3A
MP-3A
MP-3A
MP-3A
DPAK(L)-(3)
DPAK(L)-(3)
DPAK(L)-(3)
IGT
1-100 A
20-50 A
20-100 A
1-100 A
20-50 A
20-100 A
1-100 A
20-50 A
20-100 A
Note : Please confirm the specification about the shipping in detail.
R07DS0332EJ0300 Rev.3.00
Jan 23, 2013
Page 8 of 8
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