Daya MMBTA42 Sot-23 plastic-encapsulate transistor Datasheet

SOT-23 Plastic-Encapsulate Transistors
MMBTA42
TRANSISTOR (NPN)
SOT-23
FEATURES
1. BASE
z
High breakdown voltage
z
Low collector-emitter saturation voltage
z
Complementary to MMBTA92(PNP)
2. EMITTER
3. COLLECTOR
MARKING:1D
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.3
PC
Collector Power Dissipation
0.35
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
A
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
300
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=200V,IE=0
0.25
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
hFE(1)
VCE=10V,IC=1mA
60
hFE(2)
VCE=10V,IC=10mA
100
hFE(3)
VCE=10V,IC=30mA
60
Collector-emitter saturation voltage
VCE(sat)
IC=20mA,IB=2mA
0.2
V
Base-emitter saturation voltage
VBE(sat)
IC=20mA,IB=2mA
0.9
V
DC current gain
Transition frequency
fT
VCE=20V,IC=10mA,f=30MHz
50
200
MHz
MMBTA42
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