ELM ELM7S04B Inverter Datasheet

CMOS LOGIC IC
ELM7S04B Inverter
■General description
ELM7S04B is CMOS inverter IC. It realizes high speed operation similar to LS-TTL with lower power
consumption by CMOS features. The inner circuit structure of 3-stage logic gate obtains wider noise immunity
and constant output.
■Features
•
•
•
•
•
•
Same electrical characteristic as 74HC series (output current is around 1/2 of 74HC series)
Low consumption current
: Idd=1.0μA(Max.)(Top=25°C)
Wide power voltage range
: 2.0V to 6.0V
High speed
: Tpd=5ns(Typ.)(Vdd=5.0V)
Symmetrical output impedance : | Ioh |=Iol=2mA(Min.)(Vdd=4.5V)
Small package
: SOT-25
■Application
•
•
•
•
•
•
Cell phones
Digital cameras
Portable electrical appliances like PDA, etc.
Computers and peripherals
Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.
Modification inside print board, adjustment of timing, solution to noise
■Selection guide
ELM7S04B-EL
Symbol
a
b
c
Function
Product version
Taping direction
04: Inverter
B
EL: Refer to PKG file
ELM7S 0 4 B - EL
↑ ↑ ↑
a b c
■Maximum absolute ratings
Parameter
Power supply voltage
Input voltage
Output voltage
Input protection diode current
Output parasitic diode current
Output current
VDD/GND current
Power dissipation
Storage temperature
Symbol
Vdd
Vin
Vout
Iik
Iok
Iout
Idd, Ignd
Pd
Tstg
Limit
-0.5 to +7.0
-0.5 to Vdd+0.5
-0.5 to Vdd+0.5
±20
±20
±25
±25
200
-65 to +150
3-1
Unit
V
V
V
mA
mA
mA
mA
mW
°C
CMOS LOGIC IC
ELM7S04B Inverter
■Suggested operating condition
Parameter
Power voltage
Input voltage
Output voltage
Operating temperature
Symbol
Vdd
Vin
Vout
Top
High-input down-time
tr, tf
Limit
2.0 to 6.0
0 to Vdd
0 to Vdd
-40 to +85
Vdd=2.0V
Vdd=4.5V
Vdd=6.0V
Unit
V
V
V
°C
0 to 1000
0 to 500
0 to 400
ns
■Pin configuration
SOT-25(TOP VIEW)
1
Pin No.
1
2
3
4
5
4
5
2
3
Pin name
NC
INY
GND
OUTX
VDD
Input
INY
Low
High
■AC electrical characteristics
Parameter
Sym.
tTLH
tTHL
tPLH
tPHL
Output transition time
Propagation delay-time
Parameter
Sym.
tTLH
Output transition time
tTHL
tPLH
Propagation delay-time
tPHL
Input capacity
Equivalent inner capacity
Cin
Cpd
Vdd
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
Output
OUTX
High
Low
CL=15pF, tr=tf=6ns, Vdd=5V
Min.
Top=25°C
Typ.
Max.
4
10
3
10
5
15
5
15
Min.
Top=25°C
Typ.
22
8
6
16
7
6
18
8
7
17
7
6
5
10
Max.
125
25
21
125
25
21
100
20
17
100
20
17
10
Unit
Condition
ns
Refer to test circuit
ns
Refer to test circuit
CL=50pF, tr=tf=6ns
Top=-40 to +85°C
Unit
Min.
Max.
155
31
ns
26
155
31
ns
26
125
25
ns
21
125
25
ns
21
10
pF
pF
Condition
Refer to
test circuit
Refer to
test circuit
* Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test
circuit. Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd • Vdd • fin+Idd
3- 2
CMOS LOGIC IC
ELM7S04B Inverter
■DC electrical characteristics
Parameter
Sym.
Vih
Input voltage
Vil
Voh
Output voltage
Vol
Input current
Static current
Iin
Idd
Vdd
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
Min.
1.50
3.15
4.20
Top=25°C
Typ.
Max.
1.90
4.40
5.90
4.18
5.68
-0.1
Top=-40 to +85°C
Unit
Min.
Max.
1.50
3.15
V
4.20
0.50
1.35
V
1.80
1.90
4.40
5.90
V
4.13
5.63
0.10
0.10
0.10
V
0.33
0.33
-1.0
1.0
μA
10.0
μA
0.50
1.35
1.80
2.00
4.50
6.00
4.35
5.83
0.00
0.00
0.00
0.12
0.13
0.10
0.10
0.10
0.26
0.26
0.1
1.0
■Test circuit
Ioh=-20μA
Vin=Vil
Ioh=-2mA
Ioh=-2.6mA
Iol=20μA
Vin=Vih
Iol=2mA
Iol=2.6mA
Vin=Vdd or GND
Vin=Vdd or GND
■Measured wave pattern
6ns
Vdd
Pulse
Oscillator
Condition
INPUT
OUTPUT
INPUT
OUTPUT
CL
50�
10%
6ns
90%
50%
Vdd
90%
50%
10%
tTHL
90%
50%
tTLH
10%
10%
tPHL
tPLH
* Output should be opened when measuring current consumption.
■Marking
SOT-25
a
b
c
Sym.
a
b
c
3- 3
Mark
E
5
A to Z
(except I, O, X)
GND
Content
ELM7S series
ELM7S04B
Lot No.
Voh
90%
50%
Vol
Similar pages