MCR69−2, MCR69−3 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features • Glass-Passivated Junctions for Greater Parameter Stability and http://onsemi.com Reliability • Center-Gate Geometry for Uniform Current Spreading Enabling • • • SCRs 25 AMPERES RMS 50 thru 100 VOLTS High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 750 Amps Pb−Free Packages are Available* G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = 40 to +125°C, Gate Open) MCR69−2 MCR69−3 VDRM, VRRM Peak Discharge Current (Note 2) Value Unit 4 50 100 ITM 750 A On-State RMS Current (180° Conduction Angles; TC = 85°C) IT(RMS) 25 A Average On-State Current (180° Conduction Angles; TC = 85°C) IT(AV) 16 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ITSM 300 A Circuit Fusing Considerations (t = 8.3 ms) I2 t 375 A2s Forward Peak Gate Current (t ≤ 1.0 s, TC = 85°C) IGM 2.0 A Forward Peak Gate Power (t ≤ 1.0 s, TC = 85°C) PGM 20 W PG(AV) 0.5 W Forward Average Gate Power (t = 8.3 ms, TC = 85°C) TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C − 8.0 in. lb. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. 3. Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value, TJ = 125°C. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 December, 2004 − Rev. 1 TO−220AB CASE 221A STYLE 3 1 2 AYWW MCR69x AKA 3 A = Assembly Location Y = Year WW = Work Week MCR69 = Device Code x = 2 or 3 AKA = Location Code PIN ASSIGNMENT Operating Junction Temperature Range Mounting Torque MARKING DIAGRAM V 1 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device Package Shipping† MCR69−2 TO220AB 500/Box MCR69−2G TO220AB (Pb−Free) 500/Box MCR69−3 TO220AB 500/Box MCR69−3G TO220AB (Pb−Free) 500/Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MCR69/D MCR69−2, MCR69−3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RJC 1.5 °C/W Thermal Resistance, Junction−to−Ambient RJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 2.0 A mA − − − 6.0 1.8 − OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM, IRRM TJ = 25°C TJ = 125°C ON CHARACTERISTICS Peak Forward On-State Voltage (ITM = 50 A) (Note 4) (ITM = 750 A, tw = 1 ms) (Note 5) VTM V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) IGT 2.0 7.0 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) VGT − 0.65 1.5 V Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 , TJ = 125°C) VGD 0.2 0.40 − V Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) IH 3.0 15 50 mA Latching Current (VD = 12 Vdc, IG = 150 mA) IL − − 60 mA Gate Controlled Turn-On Time (Note 6) (VD = Rated VDRM, IG = 150 mA) (ITM = 50 A Peak) tgt − 1.0 − s Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125°C) dv/dt 10 − − V/s Critical Rate-of-Rise of On-State Current IG = 150 mA di/dt − − 100 A/s DYNAMIC CHARACTERISTICS TJ = 125°C 4. Pulse duration 300 s, duty cycle 2%. 5. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. http://onsemi.com 2 MCR69−2, MCR69−3 Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) I TM , PEAK DISCHARGE CURRENT (AMPS) Anode − NORMALIZED PEAK CURRENT 1000 300 200 100 50 20 0.5 ITM tw tw = 5 time constants 1.0 0.8 0.6 0.4 0.2 0 5.0 2.0 1.0 10 20 25 50 tw, PULSE CURRENT DURATION (ms) 75 100 125 Figure 2. Peak Capacitor Discharge Current Derating P(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) Figure 1. Peak Capacitor Discharge Current 32 125 120 115 Half Wave 24 110 dc 105 dc 16 100 95 90 8.0 Half Wave 85 80 75 50 TC, CASE TEMPERATURE (°C) 4.0 8.0 12 16 20 0 TJ = 125°C 0 4.0 8.0 12 16 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 3. Current Derating Figure 4. Maximum Power Dissipation http://onsemi.com 3 20 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MCR69−2, MCR69−3 1 0.7 0.5 0.3 0.2 ZJC(t) = RJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10 k t, TIME (ms) Figure 5. Thermal Response NORMALIZED GATE TRIGGER VOLTAGE 5.0 VD = 12 Volts RL = 100 3.0 2.0 1.0 0.5 0.3 0.2 −60 −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 1.4 1.0 0.8 0.5 −60 140 VD = 12 Volts RL = 100 1.2 −40 −20 0 20 2.0 VD = 12 Volts ITM = 100 mA 1.0 0.8 0.5 −40 −20 60 80 100 Figure 7. Gate Trigger Voltage 3.0 0.3 −60 40 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate Trigger Current NORMALIZED HOLD CURRENT NORMALIZED GATE TRIGGER CURRENT 10 0 40 20 60 80 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Holding Current http://onsemi.com 4 100 120 140 120 140 MCR69−2, MCR69−3 PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA B F −T− T 4 Q SEATING PLANE C S A 1 2 3 H K U Z L V R G D J N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 5 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MCR69−2, MCR69−3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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