Powerex Power FS16UMA-4A Nch power mosfet high-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
ARY
FS16UMA-4A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
FS16UMA-4A
OUTLINE DRAWING
Dimensions in mm
4.5
10.5MAX.
1.3
16
7.0
3.2
➃
1.0
3.8MAX.
0.8
2.54
2.54
➀ ➁ ➂
0.5
2.6
4.5MAX.
12.5MIN.
φ 3.6
➁➃
● 10V DRIVE
● VDSS ............................................................................... 200V
● rDS (ON) (MAX) ............................................................. 0.25Ω
● ID ......................................................................................... 16A
➀ GATE
➁ DRAIN
➂ SOURCE
➃ DRAIN
➀
➂
TO-220
APPLICATION
CS Switch for CRT Display monitor, Switch mode
power supply, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
VDSS
VGSS
ID
Drain-source voltage
Gate-source voltage
Drain current
IDM
IDA
PD
Tch
Tstg
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
—
Weight
Conditions
VGS = 0V
VDS = 0V
L = 200µH
Typical value
Ratings
Unit
200
±20
16
V
V
A
48
16
65
–55 ~ +150
–55 ~ +150
A
A
W
°C
°C
2.0
g
Sep.1998
MITSUBISHI Nch POWER MOSFET
ARY
FS16UMA-4A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
(Tch = 25°C)
Gate-source threshold voltage
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
ID = 1mA, VDS = 0V
IGS = ±10µA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = 200V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V
ID = 8A, VGS = 10V
ID = 8A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 100V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
IS = 8A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
200
±20
—
Typ.
—
Max.
—
—
±10
V
V
µA
—
2.0
—
—
—
3.0
0.20
1.60
1
4.0
0.25
2.00
mA
V
Ω
V
—
—
—
—
13.0
1150
145
45
—
—
—
—
S
pF
pF
pF
—
—
—
—
20
30
170
50
—
—
—
—
ns
ns
ns
ns
—
0.95
—
V
—
—
1.92
°C/W
PERFORMANCE CURVES
MAXIMUM SAFE OPERATING AREA
102
7
5
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
80
64
48
32
16
0
0
50
100
150
200
7
5
100µs
3
2
1ms
100
7
5
10ms
DC
3
2
TC = 25°C
Single Pulse
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 20V
10V
8V
6V
5V
16
12
PD = 65W
8
4V
4
TC = 25°C
Pulse Test
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
tw = 10µs
101
10–1
20
0
3
2
VGS = 20V
10V
8V
6V
8
6
4V
4
2
0
TC = 25°C
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
MITSUBISHI Nch POWER MOSFET
ARY
FS16UMA-4A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
6
ID = 24A
4
16A
2
4
8
12
16
0.24
0.16
VGS = 10V
20V
0.08
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
5
4
3
16
2
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
0
TC = 25°C
Pulse Test
0.32
20
12
8
4
0
CAPACITANCE
Ciss, Coss, Crss (pF)
8A
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
8
0
0.40
TC = 25°C
Pulse Test
TC = 25°C
VDS = 10V
Pulse Test
0
4
8
12
16
VDS = 10V
Pulse Test
TC = 25°C
75°C
125°C
101
7
5
4
3
2
100
7
5
100
20
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
3
7
5
2
3
2
Ciss
103
7
5
3
2
Coss
102
7
5
Crss
3 TCh = 25°C
2 f = 1MHZ
VGS = 0V
101 0
10
2
3 4 5 7 101
2
3 4 5 7 102
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
10
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
td(off)
102
tf
7
5
4
3
tr
2
td(on)
101
7
5
4
3
TCh = 25°C
VDD = 100V
VGS = 10V
RGEN = RGS = 50Ω
100
2
3 4 5 7 101
2
3 4 5 7 102
DRAIN CURRENT ID (A)
Sep.1998
MITSUBISHI Nch POWER MOSFET
ARY
FS16UMA-4A
MIN
RELI
.
ation change.
ecific
nal sp subject to
fi
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
12
VDS = 50V
100V
150V
8
4
0
20
40
60
80
8
4
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
3
2
100
7
5
3
2
–50
0
50
100
3.0
2.0
1.0
0
150
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
CHANNEL TEMPERATURE Tch (°C)
0.4
0
GATE CHARGE Qg (nC)
VGS = 10V
7 ID = 8A
5 Pulse Test
1.4
TC = 125°C
75°C
25°C
12
0
101
10–1
VGS = 0V
Pulse Test
16
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
20
TCh = 25°C
ID = 16A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3 D = 1.0
2
0.5
100
7 0.2
5
3
2
10–1
7
5
3
2
PDM
0.1
0.05
0.02
0.01
Single Pulse
tw
T
D= tw
T
10–2 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Sep.1998
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