DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D121 BZD27 series Voltage regulator diodes Product specification Supersedes data of October 1991 1996 Jun 10 Philips Semiconductors Product specification Voltage regulator diodes BZD27 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD87 package through Implotec(1) technology. This package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability k handbook, 4 columns a • Zener working voltage range: 3.6 to 270 V for 46 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types MAM249 Fig.1 Simplified outline (SOD87) and symbol. • Supplied in 8 mm embossed tape. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Ptot PZSM PRSM PARAMETER MIN. MAX. BZD27-C3V6 to -C6V8 − 1.7 W BZD27-C7V5 to -C510 − 2.3 W total power dissipation total power dissipation CONDITIONS Ttp = 105 °C; see Figs 2 and 3 PCB mounted (see Fig.7) BZD27-C3V6 to -C6V8 Tamb = 60 °C; see Fig.2 − 0.8 W BZD27-C7V5 to -C510 Tamb = 55 °C; see Fig.3 − 0.8 W BZD27-C3V6 to -C6V8 − 300 W BZD27-C7V5 to -C510 − 300 W − 150 W BZD27-C3V6 to -C6V8 −65 +200 °C BZD27-C7V5 to -C510 −65 +175 °C BZD27-C3V6 to -C6V8 −65 +200 °C BZD27-C7V5 to -C510 −65 +175 °C non-repetitive peak reverse power dissipation non-repetitive peak reverse power dissipation tp = 100 µs; square pulse; Tj = 25 °C prior to surge; see Figs.4 and 5 10/1000 µs exponential pulse (see Fig.8); Tj = 25 °C prior to surge BZD27-C7V5 to -C510 Tstg Tj 1996 Jun 10 UNIT storage temperature junction temperature 2 Philips Semiconductors Product specification Voltage regulator diodes BZD27 series ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS forward voltage VF IF = 0.2 A; see Fig.6 MIN. MAX. − 1.2 UNIT V Per type when used as voltage regulator diodes Tj = 25 °C unless otherwise specified. TYPE No. SUFFIX WORKING VOLTAGE VZ (V) at IZ DIFFERENTIAL TEMPERATURE TEST RESISTANCE COEFFICIENT CURRENT rdif (Ω) at IZ SZ (%/K) at IZ (1) MIN. NOM. MAX. TYP. MAX. MIN. MAX. IZ (mA) REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. VR (V) C3V6 3.4 3.6 3.8 4 8 −0.14 −0.04 100 100 1 C3V9 3.7 3.9 4.1 4 8 −0.14 −0.04 100 50 1 C4V3 4.0 4.3 4.6 4 7 −0.12 −0.02 100 25 1 C4V7 4.4 4.7 5.0 3 7 −0.10 0.00 100 10 1 C5V1 4.8 5.1 5.4 3 6 −0.08 −0.02 100 5 1 C5V6 5.2 5.6 6.0 2 4 −0.04 0.04 100 10 2 C6V2 5.8 6.2 6.6 2 3 −0.01 0.06 100 5 2 C6V8 6.4 6.8 7.2 1 3 0.00 0.07 100 10 3 C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 50 3 C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 10 3 C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 10 5 C10 9.4 10 10.6 2 4 0.05 0.09 50 7 7.5 C11 10.4 11 11.6 4 7 0.05 0.10 50 4 8.2 C12 11.4 12 12.7 4 7 0.05 0.10 50 3 C13 12.4 13 14.1 5 10 0.05 0.10 50 2 10 C15 13.8 15 15.6 5 10 0.05 0.10 50 1 11 C16 15.3 16 17.1 6 15 0.06 0.11 25 1 12 C18 16.8 18 19.1 6 15 0.06 0.11 25 1 13 C20 18.8 20 21.2 6 15 0.06 0.11 25 1 15 C22 20.8 22 23.3 6 15 0.06 0.11 25 1 16 C24 22.8 24 25.6 7 15 0.06 0.11 25 1 18 C27 25.1 27 28.9 7 15 0.06 0.11 25 1 20 C30 28 30 32 8 15 0.06 0.11 25 1 22 C33 31 33 35 8 15 0.06 0.11 25 1 24 C36 34 36 38 21 40 0.06 0.11 10 1 27 C39 37 39 41 21 40 0.06 0.11 10 1 30 C43 40 43 46 24 45 0.07 0.12 10 1 33 C47 44 47 50 24 45 0.07 0.12 10 1 36 1996 Jun 10 3 9.1 Philips Semiconductors Product specification Voltage regulator diodes TYPE No. SUFFIX WORKING VOLTAGE VZ (V) at IZ BZD27 series DIFFERENTIAL TEMPERATURE TEST RESISTANCE COEFFICIENT CURRENT rdif (Ω) at IZ SZ (%/K) at IZ (1) MIN. NOM. MAX. TYP. MAX. MIN. MAX. IZ (mA) REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. VR (V) C51 48 51 54 25 60 0.07 0.12 10 1 39 C56 52 56 60 25 60 0.07 0.12 10 1 43 C62 58 62 66 25 80 0.08 0.13 10 1 47 C68 64 68 72 25 80 0.08 0.13 10 1 51 C75 70 75 79 30 100 0.08 0.13 10 1 56 C82 77 82 87 30 100 0.08 0.13 10 1 62 C91 85 91 96 60 200 0.09 0.13 5 1 68 C100 94 100 106 60 200 0.09 0.13 5 1 75 C110 104 110 116 80 250 0.09 0.13 5 1 82 C120 114 120 127 80 250 0.09 0.13 5 1 91 C130 124 130 141 110 300 0.09 0.13 5 1 100 C150 138 150 156 130 300 0.09 0.13 5 1 110 C160 153 160 171 150 350 0.09 0.13 5 1 120 C180 168 180 191 180 400 0.09 0.13 5 1 130 C200 188 200 212 200 500 0.09 0.13 5 1 150 C220 208 220 233 350 750 0.09 0.13 2 1 160 C240 228 240 256 400 850 0.09 0.13 2 1 180 C270 251 270 289 450 1000 0.09 0.13 2 1 200 Note 1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51. 1996 Jun 10 4 Philips Semiconductors Product specification Voltage regulator diodes BZD27 series Per type when used as transient suppressor diodes Tj = 25 °C unless otherwise specified. TYPE NUMBER REVERSE BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT V(BR)R (V) at Itest SZ (%/K) at Itest TEST CURREN T CLAMPING VOLTAGE REVERSE CURRENT at STAND-OFF VOLTAGE IR (µA) MAX. at IRSM (A) note 1 Itest (mA) V(CL)R (V) MIN. MIN. MAX. BZD27-C10 7.0 7.7 8.5 9.4 0.00 0.03 0.03 0.05 0.07 0.08 0.08 0.09 100 100 50 50 11.3 12.3 13.3 14.8 13.3 12.2 11.3 10.1 1500 1200 100 20 6.2 6.8 7.5 8.2 BZD27-C11 10.4 0.05 0.10 50 15.7 9.6 5 9.1 BZD27-C12 11.4 0.05 0.10 50 17.0 8.8 5 10 BZD27-C13 12.4 0.05 0.10 50 18.9 7.9 5 11 BZD27-C15 13.8 0.05 0.10 50 20.9 7.2 5 12 BZD27-C16 15.3 0.06 0.11 25 22.9 6.6 5 13 BZD27-C18 16.8 0.06 0.11 25 25.6 5.9 5 15 BZD27-C20 18.8 0.06 0.11 25 28.4 5.3 5 16 BZD27-C22 20.8 0.06 0.11 25 31.0 4.8 5 18 BZD27-C24 22.8 0.06 0.11 25 33.8 4.4 5 20 BZD27-C27 25.1 0.06 0.11 25 38.1 3.9 5 22 BZD27-C30 28 0.06 0.11 25 42.2 3.6 5 24 BZD27-C33 31 0.06 0.11 25 46.2 3.2 5 27 BZD27-C36 34 0.06 0.11 10 50.1 3.0 5 30 BZD27-C39 37 0.06 0.11 10 54.1 2.8 5 33 BZD27-C43 40 0.07 0.12 10 60.7 2.5 5 36 BZD27-C47 44 0.07 0.12 10 65.5 2.3 5 39 BZD27-C51 48 0.07 0.12 10 70.8 2.1 5 43 BZD27-C56 52 0.07 0.12 10 78.6 1.9 5 47 BZD27-C62 58 0.08 0.13 10 86.5 1.7 5 51 BZD27-C68 64 0.08 0.13 10 94.4 1.6 5 56 BZD27-C75 70 0.08 0.13 10 103.5 1.5 5 62 BZD27-C82 77 0.08 0.13 10 114 1.3 5 68 BZD27-C91 85 0.09 0.13 5 126 1.2 5 75 BZD27-C100 94 0.09 0.13 5 139 1.1 5 82 BZD27-C110 104 0.09 0.13 5 152 1.0 5 91 BZD27-C120 114 0.09 0.13 5 167 0.90 5 100 BZD27-C130 124 0.09 0.13 5 185 0.81 5 110 BZD27-C150 138 0.09 0.13 5 204 0.73 5 120 BZD27-C160 153 0.09 0.13 5 224 0.67 5 130 BZD27-C7V5 BZD27-C8V2 BZD27-C9V1 1996 Jun 10 5 MAX. at VR (V) Philips Semiconductors Product specification Voltage regulator diodes TYPE NUMBER BZD27 series REVERSE BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT V(BR)R (V) at Itest SZ (%/K) at Itest MIN. MIN. MAX. TEST CURREN T Itest (mA) CLAMPING VOLTAGE V(CL)R (V) MAX. at IRSM (A) note 1 REVERSE CURRENT at STAND-OFF VOLTAGE IR (µA) MAX. at VR (V) BZD27-C180 168 0.09 0.13 5 249 0.60 5 150 BZD27-C200 188 0.09 0.13 5 276 0.54 5 160 BZD27-C220 BZD27-C240 BZD27-C270 BZD27-C300 BZD27-C330 BZD27-C360 BZD27-C390 BZD27-C430 BZD27-C470 BZD27-C510 208 228 251 280 310 340 370 400 440 480 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 2 2 2 2 2 2 2 2 2 2 305 336 380 419 459 498 537 603 655 707 0.50 0.45 0.40 0.36 0.33 0.30 0.28 0.25 0.23 0.21 5 5 5 5 5 5 5 5 5 5 180 200 220 240 270 300 330 360 390 430 Note 1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.8. THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to tie-point BZD27-C3V6 to -C6V8 55 K/W BZD27-C7V5 to -C510 30 K/W BZD27-C3V6 to -C6V8 175 K/W BZD27-C7V5 to -C510 150 K/W thermal resistance from junction to ambient note 1 Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7. For more information please refer to the “General Part of associated Handbook”. 1996 Jun 10 6 Philips Semiconductors Product specification Voltage regulator diodes BZD27 series GRAPHICAL DATA MBH454 3 MBH455 3 handbook, halfpage handbook, halfpage Ptot Ptot (W) (W) 2 2 1 1 0 0 100 0 200 T (°C) Types BZD27-C3V6 to -C6V8 Solid line: tie-point temperature. Dotted line: ambient temperature; device mounted as shown in Fig.7. Fig.2 100 0 T (°C) 200 Types BZD27-C7V5 to -C510 Solid line: tie-point temperature. Dotted line: ambient temperature; device mounted as shown in Fig.7. Maximum total power dissipation as a function of temperature. Fig.3 Maximum total power dissipation as a function of temperature. MGD524 104 handbook, halfpage MGD525 400 handbook, halfpage PZSM (W) PZSM (W) 300 103 200 102 100 10 10−2 10−1 1 tp (ms) 0 10 0 Tj = 25 °C prior to surge. See also Fig 5. Fig.4 3V9 4V3 4V7 5V1 5V6 6V2 6V8 VZnom (V) Tj = 25 °C prior to surge. Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 1996 Jun 10 3V6 Fig.5 7 Maximum non-repetitive peak reverse power dissipation as a function of nominal working voltage. Philips Semiconductors Product specification Voltage regulator diodes BZD27 series MGD520 2 50 handbook, halfpage IF (A) 4.5 1 50 2.5 1.25 0 1 0 VF (V) Tj = 25 °C. Fig.6 Dimensions in mm. Forward current as a function of forward voltage; typical values. Fig.7 Printed-circuit board for surface mounting. IRSMhalfpage handbook, (%) 100 90 50 10 t t1 t2 MGD521 In accordance with “IEC 60-1, Section 8”. t1 = 10 µs. t2 = 1000 µs. Fig.8 1996 Jun 10 MSB213 2 Non-repetitive peak reverse current pulse definition. 8 Philips Semiconductors Product specification Voltage regulator diodes BZD27 series PACKAGE OUTLINE 3.5 handbook, full pagewidth 0.2 0.3 OD= 2.05 0.05 MBA505 O D1 = 1.9 0.1 Dimensions in mm. The marking band indicates the cathode. Fig.9 SOD87. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 10 9