This product complies with the RoHS Directive (EU 2002/95/EC). DSK5J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor Features Package High gate-drain voltage (source open) VGDO Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SMini3-F2-B Pin Name 1: Source 2: Drain 3: Gate Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Marking Symbol: B6 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VGDS –55 V Drain current ID 30 mA Gate current IG 10 mA Power dissipation PD 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Gate-drain breakdown voltage Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Gate-drain breakdown voltage VGDS IG = –100 mA, VDS = 0 –55 Drain-source cutoff current * IDSS VDS = 10 V, VGS = 0 1.0 Gate-source cutoff current IGSS Gate-source cutoff voltage Forward transfer admittance Typ Max Unit V 12.0 mA VGS = –30 V, VDS = 0 –10 nA VGSC VDS = 10 V, ID = 10 mA –5 V Yfs VDS = 10 V, ID = 5 mA, f = 1 MHz Short-circuit input capacitance (Common source) Ciss Reverse transfer capacitance (Common source) Crss VDS = 10 V, VGS = 0, f = 1 MHz 2.5 7.5 mS 6.0 pF 2.5 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Code P Q R Rank P Q R IDSS 1.0 to 3.0 2.0 to 6.5 5.0 to 12.0 Marking Symbol B6P B6Q B6R Publication date: November 2010 Ver. AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DSK5J01 DSK9J01_ ID-VGS DSK9J01_ ID-VDS ID VDS 8 4 DSK5J01_ PD-Ta ID VGS PD Ta 200 Ta = 25°C VGS = 0 V 2 − 0.2 V − 0.4 V 1 6 Power dissipation PD (mW) 3 Drain current ID (mA) Drain current ID (mA) VDS = 10 V −30°C 25°C 4 Ta = 85°C 2 150 100 50 − 0.6 V 0 0 4 8 0 −1.5 12 Drain-source voltage VDS (V) Gate-source voltage VGS (V) DSK9J01_Ciss , Crss , Coss -VDS DSK9J01_|Yfs|-ID 10 Crss 6 Coss 4 2 0 0 5 10 15 Drain-source voltage VDS (V) 2 20 Ta = 25°C VDS = 10 V 10 1 10−1 −2 10 10−1 1 Drain current ID (mA) Ver. AED 0 0 40 80 120 Ambient temperature Ta (°C) Yfs ID Ta = 25°C Ciss 0.5 102 Forward transfer admittance |Yfs | (mS) Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) Ciss , Crss , Coss VDS 8 0 − 0.5 −1.0 10 160 This product complies with the RoHS Directive (EU 2002/95/EC). DSK5J01 SMini3-F2-B Unit: mm 2.00 ±0.20 +0.05 0.30 −0.02 1 0.425 ±0.05 (5°) 2.10 ±0.10 1.25 ±0.10 3 2 (0.65) (0.65) +0.05 0.13 −0.02 (0.49) 1.30 ±0.10 0 to 0.10 0.90 ±0.10 (5°) Ver. AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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