FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • 6.7 A, 150 V RDS(ON) = 420 mΩ @ VGS = 10 V RDS(ON) = 470 mΩ @ VGS = 6 V • Low gate charge (8nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) . D D G G S TO-252 S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation TJ, TSTG Units 150 V ±20 V (Note 3) 6.7 A (Note 1a) 20 – Continuous – Pulsed Ratings (Note 1) 42 (Note 1a) 3.8 (Note 1b) 1.6 Operating and Storage Junction Temperature Range W −55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD2512 FDD2512 13’’ 16mm 2500 units 2001 Fairchild Semiconductor Corporation FDD2512 Rev B2(W) FDD2512 August 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse,VDD = 75 V, ID = 2.2A 90 mJ 2.2 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 120 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA 4 V On Characteristics 150 V 147 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage VDS = VGS, ID = 250 µA Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –5.6 Static Drain–Source On–Resistance 307 322 606 ID(on) On–State Drain Current VGS = 10 V, ID = 2.2 A VGS = 6 V, ID = 2.0 A VGS = 10 V, ID = 2.2 A,TJ = 125°C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 2.2 A 6.5 VDS = 75 V, f = 1.0 MHz V GS = 0 V, 344 pF 22 pF 9 pF 2 2.6 mV/°C 420 470 870 5 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = 75 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 75 V, VGS = 10 V 6.5 ID = 2.2 A, 13 ns 3.5 7 ns 22 33 ns 4 8 ns 8 11 nC 1.5 nC 2.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A 0.8 (Note 2) 3.2 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 2 1in pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD RDS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD2512 Rev B2(W) FDD2512 Electrical Characteristics FDD2512 Typical Characteristics 1.4 8 VGS =10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V ID, DRAIN CURRENT (A) 6.0V 6 4.0V 4 2 1.3 VGS = 4.0V 1.2 2 4 6 8 5.0V 6.0V 0.9 10 0 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) 3 4 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.6 0.8 ID = 1A ID = 2.2A VGS = 10V 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 1 0 0 4.5V 1.1 1.8 1.4 1 0.6 0.7 0.6 TA = 125oC 0.5 0.4 0.3 TA = 25oC 0.2 -50 -25 0 25 50 75 100 125 150 0.2 175 3 4 5 o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 7 8 9 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 8 IS, REVERSE DRAIN CURRENT (A) 25oC TA = -55oC VDS = 25V 125oC ID, DRAIN CURRENT (A) 6 VGS, GATE TO SOURCE VOLTAGE (V) 6 4 2 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD2512 Rev B2(W) FDD2512 Typical Characteristics 500 ID = 2.2A VDS = 50V f = 1MHz VGS = 0 V 75V 8 400 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 100V 6 4 CISS 300 200 100 2 COSS CRSS 0 0 0 1 2 3 4 5 6 7 8 0 9 25 Figure 7. Gate Charge Characteristics. 75 125 150 100 P(pk), PEAK TRANSIENT POWER (W) 100µs 10 1ms 10ms 100ms RDS(ON) LIMIT 1 1s 10s DC 0.1 VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.01 TA = 25oC 0.001 0.1 1 10 100 SINGLE PULSE RθJA =96°C/W TA = 25°C 80 60 40 20 0 0.01 1000 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 100 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 50 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD2512 Rev B2(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4