Cypress CY7C1414AV18-250BZC 36-mbit qdr-iiâ ¢ sram 2-word burst architecture Datasheet

CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
36-Mbit QDR-II™ SRAM 2-Word Burst
Architecture
Features
Functional Description
• Separate Independent Read and Write data ports
The CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and
CY7C1414AV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports to access the memory array.
The Read port has dedicated Data Outputs to support Read
operations and the Write Port has dedicated Data Inputs to
support Write operations. QDR-II architecture has separate
data inputs and data outputs to completely eliminate the need
to “turn-around” the data bus required with common IO
devices. Access to each port is accomplished through a
common address bus. The Read address is latched on the
rising edge of the K clock and the Write address is latched on
the rising edge of the K clock. Accesses to the QDR-II Read
and Write ports are completely independent of one another. In
order to maximize data throughput, both Read and Write ports
are equipped with Double Data Rate (DDR) interfaces. Each
address location is associated with two 8-bit words
(CY7C1410AV18) or 9-bit words (CY7C1425AV18) or 18-bit
words (CY7C1412AV18) or 36-bit words (CY7C1414AV18)
that burst sequentially into or out of the device. While data can
be transferred into and out of the device on every rising edge
of both input clocks (K and K and C and C), memory bandwidth
is maximized while simplifying system design by eliminating
bus “turn-arounds.”
— Supports concurrent transactions
• 250-MHz clock for high bandwidth
• 2-Word Burst on all accesses
• Double Data Rate (DDR) interfaces on both Read and Write
ports (data transferred at 500 MHz) @ 250 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize clock
skew and flight-time mismatches
• Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
• Single multiplexed address input bus latches address inputs
for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self timed writes
• Available in x8, x9, x18, and x36 configurations
• Full data coherency, providing most current data
• Core VDD = 1.8V (±0.1V); IO VDDQ = 1.4V to VDD
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
• Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
• Offered in both Pb-free and non Pb-free packages
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self timed write circuitry.
• Variable drive HSTL output buffers
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1410AV18 – 4M x 8
CY7C1425AV18 – 4M x 9
CY7C1412AV18 – 2M x 18
CY7C1414AV18 – 1M x 36
Selection Guide
250 MHz
200 MHz
167 MHz
Unit
Maximum Operating Frequency
250
200
167
MHz
Maximum Operating Current
1065
870
740
mA
Cypress Semiconductor Corporation
Document #: 38-05615 Rev. *D
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised July 09, 2007
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Logic Block Diagram (CY7C1410AV18)
D[7:0]
CLK
Gen.
DOFF
Address
Register
Read Add. Decode
K
K
Write Add. Decode
21
Write
Reg
2M x 8 Array
Address
Register
Write
Reg
2M x 8 Array
A(20:0)
8
RPS
Control
Logic
C
C
Read Data Reg.
16
VREF
WPS
NWS[1:0]
CQ
CQ
8
Reg.
Control
Logic
A(20:0)
21
8
Reg.
8
8
Reg.
Q[7:0]
8
Logic Block Diagram (CY7C1425AV18)
K
K
CLK
Gen.
DOFF
VREF
WPS
BWS[0]
Address
Register
Read Add. Decode
21
Write
Reg
2M x 9 Array
Address
Register
Write
Reg
2M x 9 Array
A(20:0)
9
Write Add. Decode
D[8:0]
21
A(20:0)
RPS
Control
Logic
C
C
Read Data Reg.
CQ
CQ
18
Control
Logic
9
Reg.
9
Reg.
9
Document #: 38-05615 Rev. *D
Reg.
9
9 Q
[8:0]
Page 2 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Logic Block Diagram (CY7C1412AV18)
D[17:0]
K
K
CLK
Gen.
DOFF
Address
Register
Read Add. Decode
20
Write
Reg
1M x 18 Array
A(19:0)
Write
Reg
1M x 18 Array
Address
Register
Write Add. Decode
18
RPS
Control
Logic
C
C
Read Data Reg.
36
VREF
WPS
BWS[1:0]
CQ
CQ
18
Reg.
Control
Logic
A(19:0)
20
18
Reg.
18
18
Reg.
Q[17:0]
18
Logic Block Diagram (CY7C1414AV18)
K
K
CLK
Gen.
DOFF
VREF
WPS
BWS[3:0]
Address
Register
Read Add. Decode
19
Write
Reg
512K x 36 Array
Address
Register
Write
Reg
512K x 36 Array
A(18:0)
36
Write Add. Decode
D[35:0]
19
RPS
Control
Logic
C
C
Read Data Reg.
72
Control
Logic
Reg.
Reg.
36
Reg.
36
36
Document #: 38-05615 Rev. *D
CQ
CQ
36
36
A(18:0)
Q[35:0]
Page 3 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Pin Configurations
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1410AV18 (4M x 8)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
CQ
NC/72M
3
4
5
NC
A
NC
WPS
A
NWS1
NC/288M
NC
NC
NC
NC
D4
NC
NC
VSS
VSS
A
NC
NC
Q4
VDDQ
VSS
VSS
NC
NC
NC
NC
VDDQ
VDD
VSS
DOFF
NC
D5
VREF
NC
Q5
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
7
8
9
10
11
NC/144M
NWS0
A
VSS
RPS
A
A
NC
A
NC
CQ
Q3
VSS
VSS
NC
NC
NC
D3
NC
VSS
VDDQ
NC
D2
Q2
VDD
VDDQ
NC
NC
NC
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
VDDQ
NC
NC
VREF
Q1
NC
ZQ
D1
6
K
K
A
VSS
NC
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
Q6
D6
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q0
NC
NC
NC
D7
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
D0
NC
NC
NC
Q7
A
A
C
A
A
NC
NC
NC
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
CY7C1425AV18 (4M x 9)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
4
5
6
7
8
9
10
11
CQ
NC/72M
WPS
NC
K
NC/144M
RPS
A
A
NC
A
NC
CQ
Q4
VSS
VSS
NC
NC
NC
NC
D4
NC
NC
NC
A
NC
A
NC/288M
K
NC
NC
NC
D5
NC
NC
VSS
VSS
A
VSS
A
VSS
BWS0
A
VSS
NC
NC
Q5
VDDQ
VSS
VSS
VSS
VDDQ
NC
D3
Q3
NC
NC
NC
NC
VDDQ
VDD
VSS
DOFF
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDDQ
VDDQ
VDDQ
NC
NC
VDDQ
NC
NC
Q6
VDDQ
NC
VDD
VDD
VDD
VDD
VDDQ
D6
VREF
NC
NC
VREF
Q2
NC
NC
ZQ
D2
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
Q7
D7
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q1
NC
NC
NC
D8
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
D1
NC
NC
NC
Q8
A
A
C
A
A
NC
D0
Q0
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document #: 38-05615 Rev. *D
Page 4 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Pin Configurations (continued)
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1412AV18 (2M x 18)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
4
5
6
7
8
9
10
11
CQ
NC
NC/144M
A
WPS
BWS1
K
NC/288M
A
NC
K
BWS0
A
NC
CQ
D9
RPS
A
NC/72M
Q9
NC
Q8
NC
NC
NC
D11
D10
Q10
VSS
VSS
A
A
VSS
VSS
VSS
NC
VSS
A
VSS
NC
Q7
NC
D8
D7
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
NC
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
Q13
VDDQ
D14
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
NC
VDDQ
NC
NC
D13
VREF
NC
NC
VREF
Q4
Q5
D5
ZQ
D4
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
NC
NC
NC
D17
D16
Q16
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
Q1
NC
D2
D1
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
7
8
9
10
11
DOFF
NC
CY7C1414AV18 (1M x 36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
3
5
6
WPS
BWS2
K
BWS1
D18
A
A
D17
Q17
CQ
Q8
Q28
D20
D19
Q19
VSS
VSS
K
A
VSS
BWS0
D27
D28
BWS3
A
VSS
RPS
A
NC/144M
Q18
A
VSS
VSS
VSS
D16
Q16
Q7
D15
D8
D7
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
Q30
Q21
D21
VDDQ
VDD
VSS
DOFF
D31
Q22
VDDQ
D23
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDDQ
VDDQ
VDDQ
D14
Q13
VDDQ
D12
Q14
D22
VREF
Q31
VDD
VDD
VDD
VDD
VDDQ
D30
D13
VREF
Q4
Q5
D5
ZQ
D4
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
D33
D34
Q34
D26
D25
Q25
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
D10
Q10
Q1
D9
D2
D1
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
CQ
Q27
NC/288M NC/72M
4
Document #: 38-05615 Rev. *D
Page 5 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Pin Definitions
IO
Pin Description
D[x:0]
Pin Name
InputSynchronous
Data input signals, sampled on the rising edge of K and K clocks during valid write
operations.
CY7C1410AV18 - D[7:0]
CY7C1425AV18 - D[8:0]
CY7C1412AV18 - D[17:0]
CY7C1414AV18 - D[35:0]
WPS
InputSynchronous
Write Port Select, Active LOW. Sampled on the rising edge of the K clock. When
asserted active, a Write operation is initiated. Deasserting deselects the Write port.
Deselecting the Write port causes D[x:0] to be ignored.
Nibble Write Select 0, 1 − Active LOW. (CY7C1410AV18 Only) Sampled on the rising
edge of the K and K clocks during Write operations. Used to select which nibble is written
into the device during the current portion of the Write operations.Nibbles not written
remain unaltered. NWS0 controls D[3:0] and NWS1 controls D[7:4]. All Nibble Write Selects
are sampled on the same edge as the data. Deselecting a Nibble Write Select causes
the corresponding nibble of data to be ignored and not written into the device.
NWS0,NWS1
BWS0, BWS1,
BWS2, BWS3
InputSynchronous
Byte Write Select 0, 1, 2 and 3 − Active LOW. Sampled on the rising edge of the K and
K clocks during Write operations. Used to select which byte is written into the device
during the current portion of the Write operations. Bytes not written remain unaltered.
CY7C1425AV18 − BWS0 controls D[8:0]
CY7C1412AV18 − BWS0 controls D[8:0], BWS1 controls D[17:9].
CY7C1414AV18 − BWS0 controls D[8:0], BWS1 controls D[17:9],BWS2 controls D[26:18]
and BWS3 controls D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte
Write Select causes the corresponding byte of data to be ignored and not written into the
device.
A
InputSynchronous
Address Inputs. Sampled on the rising edge of the K (Read address) and K (Write
address) clocks during active Read and Write operations. These address inputs are
multiplexed for both Read and Write operations. Internally, the device is organized as 4M
x 8 (2 arrays each of 2M x 8) for CY7C1410AV18, 4M x 9 (2 arrays each of 2M x 9) for
CY7C1425AV18, 2M x 18 (2 arrays each of 1M x 18) for CY7C1412AV18 and 1M x 36
(2 arrays each of 512K x 36) for CY7C1414AV18. Therefore, only 21 address inputs are
needed to access the entire memory array of CY7C1410AV18 and CY7C1425AV18, 20
address inputs for CY7C1412AV18 and 19 address inputs for CY7C1414AV18. These
inputs are ignored when the appropriate port is deselected.
Q[x:0]
OutputsSynchronous
Data Output signals. These pins drive out the requested data during a Read operation.
Valid data is driven out on the rising edge of both the C and C clocks during Read
operations or K and K when in single clock mode. When the Read port is deselected,
Q[x:0] are automatically tri-stated.
CY7C1410AV18 − Q[7:0]
CY7C1425AV18 − Q[8:0]
CY7C1412AV18 − Q[17:0]
CY7C1414AV18 − Q[35:0]
RPS
InputSynchronous
Read Port Select, Active LOW. Sampled on the rising edge of Positive Input Clock (K).
When active, a Read operation is initiated. Deasserting causes the Read port to be
deselected. When deselected, the pending access is allowed to complete and the output
drivers are automatically tri-stated following the next rising edge of the C clock. Each
read access consists of a burst of two sequential transfers.
C
Input-Clock
Positive Input Clock for Output Data. C is used in conjunction with C to clock out the
Read data from the device. C and C can be used together to deskew the flight times of
various devices on the board back to the controller. See application example for further
details.
C
Input-Clock
Negative Input Clock for Output Data. C is used in conjunction with C to clock out the
Read data from the device. C and C can be used together to deskew the flight times of
various devices on the board back to the controller. See application example for further
details.
Document #: 38-05615 Rev. *D
Page 6 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Pin Definitions (continued)
Pin Name
IO
Pin Description
K
Input-Clock
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs
to the device and to drive out data through Q[x:0] when in single clock mode. All accesses
are initiated on the rising edge of K.
K
Input-Clock
Negative Input Clock Input. K is used to capture synchronous inputs being presented
to the device and to drive out data through Q[x:0] when in single clock mode.
CQ
Echo Clock
CQ is referenced with respect to C. This is a free running clock and is synchronized
to the Input clock for output data (C) of the QDR-II. In the single clock mode, CQ is
generated with respect to K. The timings for the echo clocks are shown in the AC Timing
table.
CQ
Echo Clock
ZQ
Input
CQ is referenced with respect to C. This is a free running clock and is synchronized
to the Input clock for output data (C) of the QDR-II. In the single clock mode, CQ is
generated with respect to K. The timings for the echo clocks are shown in the AC Timing
table.
Output Impedance Matching Input. This input is used to tune the device outputs to the
system data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ,
where RQ is a resistor connected between ZQ and ground. Alternately, this pin can be
connected directly to VDDQ, which enables the minimum impedance mode. This pin
cannot be connected directly to GND or left unconnected.
DOFF
Input
TDO
Output
DLL Turn Off, Active LOW. Connecting this pin to ground turns off the DLL inside the
device. The timings in the DLL turned off operation is different from those listed in this
data sheet.
TDO for JTAG.
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/144M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
N/A
Not connected to the die. Can be tied to any voltage level.
VREF
InputReference
VDD
Power Supply
VSS
Ground
VDDQ
Power Supply
Reference Voltage Input. Static input used to set the reference level for HSTL inputs
and Outputs as well as AC measurement points.
Power supply inputs to the core of the device.
Ground for the device.
Power supply inputs for the outputs of the device.
Functional Overview
The CY7C1410AV18, CY7C1425AV18, CY7C1412AV18 and
CY7C1414AV18 are synchronous pipelined Burst SRAMs
equipped with both a Read port and a Write port. The Read
port is dedicated to Read operations and the Write port is
dedicated to Write operations. Data flows into the SRAM
through the Write port and out through the Read port. These
devices multiplex the address inputs in order to minimize the
number of address pins required. By having separate Read
and Write ports, the QDR-II completely eliminates the need to
“turn-around” the data bus and avoids any possible data
contention, thereby simplifying system design. Each access
consists of two 8-bit data transfers in the case of
CY7C1410AV18, two 9-bit data transfers in the case of
CY7C1425AV18,two 18-bit data transfers in the case of
CY7C1412AV18 and two 36-bit data transfers in the case of
CY7C1414AV18, in one clock cycle.
Document #: 38-05615 Rev. *D
Accesses for both ports are initiated on the rising edge of the
positive Input Clock (K). All synchronous input timings are
referenced from the rising edge of the input clocks (K and K)
and all output timings are referenced to the rising edge of
output clocks (C and C or K and K when in single clock mode).
All synchronous data inputs (D[x:0]) inputs pass through input
registers controlled by the input clocks (K and K). All
synchronous data outputs (Q[x:0]) outputs pass through output
registers controlled by the rising edge of the output clocks (C
and C or K and K when in single clock mode).
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of the
input clocks (K and K).
CY7C1412AV18 is described in the following sections. The
same basic descriptions apply to CY7C1410AV18,
CY7C1425AV18, and CY7C1414AV18.
Page 7 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Read Operations
Concurrent Transactions
The CY7C1412AV18 is organized internally as 2 arrays of
1Mx18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the Positive Input Clock (K).
The address is latched on the rising edge of the K Clock. The
address presented to Address inputs is stored in the Read
address register. Following the next K clock rise the corresponding lowest order 18-bit word of data is driven onto the
Q[17:0] using C as the output timing reference. On the subsequent rising edge of C, the next 18-bit data word is driven onto
the Q[17:0]. The requested data is valid 0.45 ns from the rising
edge of the output clock (C and C or K and K when in single
clock mode).
The Read and Write ports on the CY7C1412AV18 operate
completely independently of one another. While each port
latches the address inputs on different clock edges, the user
can Read or Write to any location, regardless of the transaction on the other port. Also, reads and writes can be started
in the same clock cycle. If the ports access the same location
at the same time, the SRAM delivers the most recent information associated with the specified address location. This
includes forwarding data from a Write cycle that was initiated
on the previous K clock rise.
Synchronous internal circuitry automatically tri-states the
outputs following the next rising edge of the Output Clocks
(C/C). This allows for a seamless transition between devices
without the insertion of wait states in a depth expanded
memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the Positive Input Clock (K). On the same K
clock rise, the data presented to D[17:0] is latched and stored
into the lower 18-bit Write Data register provided BWS[1:0] are
both asserted active. On the subsequent rising edge of the
Negative Input Clock (K), the address is latched and the information presented to D[17:0] is stored into the Write Data
register provided BWS[1:0] are both asserted active. The 36
bits of data are then written into the memory array at the
specified location. When deselected, the write port ignores all
inputs after the pending Write operations have been
completed.
Byte Write Operations
Byte Write operations are supported by the CY7C1412AV18.
A Write operation is initiated as described in the Write Operations section above. The bytes that are written are determined
by BWS0 and BWS1, which are sampled with each 18-bit data
word. Asserting the appropriate Byte Write Select input during
the data portion of a Write allows the data being presented to
be latched and written into the device. Deasserting the Byte
Write Select input during the data portion of a write allows the
data stored in the device for that byte to remain unaltered. This
feature can be used to simplify Read/Modify/Write operations
to a Byte Write operation.
Single Clock Mode
The CY7C1412AV18 can be used with a single clock that
controls both the input and output registers. In this mode, the
device recognizes only a single pair of input clocks (K and K)
that control both the input and output registers. This operation
is identical to the operation if the device had zero skew
between the K/K and C/C clocks. All timing parameters remain
the same in this mode. To use this mode of operation, the user
must tie C and C HIGH at power on. This function is a strap
option and not alterable during device operation.
Document #: 38-05615 Rev. *D
Depth Expansion
The CY7C1412AV18 has a Port Select input for each port.
This allows for easy depth expansion. Both Port Selects are
sampled on the rising edge of the Positive Input Clock only (K).
Each port select input can deselect the specified port.
Deselecting a port does not affect the other port. All pending
transactions (Read and Write) are completed prior to the
device being deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ
pin on the SRAM and VSS to allow the SRAM to adjust its
output driver impedance. The value of RQ must be 5x the
value of the intended line impedance driven by the SRAM. The
allowable range of RQ to guarantee impedance matching with
a tolerance of ±15% is between 175Ω and 350Ω, with
VDDQ = 1.5V.The output impedance is adjusted every 1024
cycles upon power up to account for drifts in supply voltage
and temperature.
Echo Clocks
Echo clocks are provided on the QDR-II to simplify data
capture on high-speed systems. Two echo clocks are
generated by the QDR-II. CQ is referenced with respect to C
and CQ is referenced with respect to C. These are
free-running clocks and are synchronized to the output clock
(C/C) of the QDR-II. In the single clock mode, CQ is generated
with respect to K and CQ is generated with respect to K. The
timings for the echo clocks are shown in the AC Timing table.
DLL
These chips use a Delay Lock Loop (DLL) that is designed to
function between 80 MHz and the specified maximum clock
frequency. During power up, when the DOFF is tied HIGH, the
DLL gets locked after 1024 cycles of stable clock. The DLL can
also be reset by slowing or stopping the input clock K and K
for a minimum of 30 ns. However, it is not necessary for the
DLL to be specifically reset in order to lock the DLL to the
desired frequency. The DLL automatically locks 1024 clock
cycles after a stable clock is presented.the DLL may be
disabled by applying ground to the DOFF pin. For information
refer to the application note “DLL Considerations in
QDRII/DDRII/QDRII+/DDRII+”.
Page 8 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Application Example[1]
R = 250οηµσ
SRAM #1
R
P
S
#
Vt
D
A
R
W
P
S
#
B
W
S
#
SRAM #4
ZQ
CQ/CQ#
Q
C C# K K#
R
P
S
#
D
A
DATA IN
DATA OUT
Address
RPS#
BUS
WPS#
MASTER
BWS#
(CPU CLKIN/CLKIN#
or
Source K
ASIC)
Source K#
R
W
P
S
#
B
W
S
#
ZQ R = 250οηµσ
CQ/CQ#
Q
C C# K K#
Vt
Vt
Delayed K
Delayed K#
R
R = 50οηµσ Vt = Vddq/2
Truth Table[2, 3, 4, 5, 6, 7]
Operation
K
RPS
WPS
Write Cycle:
Load address on the rising edge of K clock; input
write data on K and K rising edges.
L-H
X
L
D(A + 0) at K(t) ↑
Read Cycle:
Load address on the rising edge of K clock; wait one
and a half cycle; read data on C and C rising edges.
L-H
L
X
Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑
NOP: No Operation
L-H
H
H
D=X
Q = High-Z
D=X
Q = High-Z
Stopped
X
X
Previous State
Previous State
Standby: Clock Stopped
DQ
DQ
D(A + 1) at K(t) ↑
Write Cycle Descriptions (CY7C1410AV18 and CY7C1412AV18) [2, 8]
BWS0/NWS0 BWS1/NWS1
K
K
Comments
L
L
L-H
–
During the data portion of a write sequence:
CY7C1410AV18 − both nibbles (D[7:0]) are written into the device,
CY7C1412AV18 − both bytes (D[17:0]) are written into the device.
L
L
–
L-H
During the data portion of a write sequence:
CY7C1410AV18 − both nibbles (D[7:0]) are written into the device,
CY7C1412AV18 − both bytes (D[17:0]) are written into the device.
L
H
L-H
–
During the data portion of a write sequence:
CY7C1410AV18 − only the lower nibble (D[3:0]) is written into the device. D[7:4]
remains unaltered,
CY7C1412AV18 − only the lower byte (D[8:0]) is written into the device. D[17:9]
remains unaltered.
Notes:
1. The above application shows four QDR-II being used.
2. X = “Don't Care,” H = Logic HIGH, L= Logic LOW, ↑represents rising edge.
3. Device powers up deselected and the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 00, A + 01 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t + 1 and t + 2 are the first and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line
charging symmetrically.
8. Assumes a Write cycle was initiated according to the Write Port Cycle Description Truth Table. NWS0, NWS1, BWS0, BWS1, BWS2 and BWS3 can be altered
on different portions of a Write cycle, as long as the setup and hold requirements are achieved.
Document #: 38-05615 Rev. *D
Page 9 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Write Cycle Descriptions (CY7C1410AV18 and CY7C1412AV18) (continued)[2, 8]
BWS0/NWS0 BWS1/NWS1
K
K
Comments
L
H
–
L-H
During the data portion of a write sequence:
CY7C1410AV18 − only the lower nibble (D[3:0]) is written into the device. D[7:4]
remains unaltered,
CY7C1412AV18 − only the lower byte (D[8:0]) is written into the device. D[17:9]
remains unaltered.
H
L
L-H
–
During the data portion of a write sequence:
CY7C1410AV18 − only the upper nibble (D[7:4]) is written into the device. D[3:0]
remains unaltered,
CY7C1412AV18 − only the upper byte (D[17:9]) is written into the device. D[8:0]
remains unaltered.
H
L
–
L-H
During the data portion of a write sequence:
CY7C1410AV18 − only the upper nibble (D[7:4]) is written into the device. D[3:0]
remains unaltered,
CY7C1412AV18 − only the upper byte (D[17:9]) is written into the device. D[8:0]
remains unaltered.
H
H
L-H
–
No data is written into the devices during this portion of a write operation.
H
H
–
L-H
No data is written into the devices during this portion of a write operation.
Write Cycle Descriptions (CY7C1414AV18)
[2, 8]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L-H
–
L
L
L
L
–
L-H
L
H
H
H
L-H
–
L
H
H
H
–
L-H
H
L
H
H
L-H
–
H
L
H
H
–
L-H
H
H
L
H
L-H
–
H
H
L
H
–
L-H
H
H
H
L
L-H
H
H
H
L
–
L-H
H
H
H
H
H
H
H
H
L-H
–
–
L-H
During the data portion of a write sequence, all four bytes (D[35:0]) are
written into the device.
During the data portion of a write sequence, all four bytes (D[35:0]) are
written into the device.
During the data portion of a write sequence, only the lower byte (D[8:0])
is written into the device. D[35:9] remains unaltered.
During the data portion of a write sequence, only the lower byte (D[8:0])
is written into the device. D[35:9] remains unaltered.
During the data portion of a write sequence, only the byte (D[17:9]) is
written into the device. D[8:0] and D[35:18] remains unaltered.
During the data portion of a write sequence, only the byte (D[17:9]) is
written into the device. D[8:0] and D[35:18] remains unaltered.
During the data portion of a write sequence, only the byte (D[26:18]) is
written into the device. D[17:0] and D[35:27] remains unaltered.
During the data portion of a write sequence, only the byte (D[26:18]) is
written into the device. D[17:0] and D[35:27] remains unaltered.
During the data portion of a write sequence, only the byte (D[35:27]) is
written into the device. D[26:0] remains unaltered.
During the data portion of a write sequence, only the byte (D[35:27]) is
written into the device. D[26:0] remains unaltered.
No data is written into the device during this portion of a write operation.
No data is written into the device during this portion of a write operation.
Write Cycle Descriptions (CY7C1425AV18)
BWS0
K
K
L
L-H
–
L
–
L-H
H
H
L-H
–
–
L-H
Comments
During the data portion of a write sequence:
CY7C1425AV18 - the single byte (D[8:0]) is written into the device
During the data portion of a write sequence:
CY7C1425AV18 - the single byte (D[8:0]) is written into the device
No data is written into the devices during this portion of a Write operation.
No data is written into the devices during this portion of a Write operation.
Document #: 38-05615 Rev. *D
Page 10 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant
with IEEE Standard #1149.1-1900. The TAP operates using
JEDEC standard 1.8V IO logic levels.
Disabling the JTAG Feature
Upon power up, the instruction register is loaded with the
IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
When the TAP controller is in the Capture IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board level serial test path.
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull up resistor. TDO must be
left unconnected. Upon power up, the device is up in a reset
state which does not interfere with the operation of the device.
Bypass Register
Test Access Port—Test Clock
Boundary Scan Register
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Test Mode Select
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this pin unconnected if the TAP is not used. The pin is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine (see Instruction codes). The
output changes on the falling edge of TCK. TDO is connected
to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five
rising edges of TCK. This RESET does not affect the operation
of the SRAM and may be performed while the SRAM is
operating. At power up, the TAP is reset internally to ensure
that TDO comes up in a high-Z state.
TAP Registers
Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction registers. Data is serially loaded into the TDI pin
on the rising edge of TCK. Data is output on the TDO pin on
the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO pins as shown in TAP Controller Block Diagram.
Document #: 38-05615 Rev. *D
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices.
The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO pins when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the Input and
Output ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Code table. Three of these instructions are listed
as RESERVED and must not be used. The other five instructions are described in detail below.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO pins.
To execute the instruction after it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction
Page 11 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
is loaded into the instruction register upon power up or
whenever the TAP controller is supplied a test logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. The SAMPLE Z command puts
the output bus into a High-Z state until the next command is
supplied during the “Update IR” state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
undergoes a transition. The TAP may then try to capture a
signal while in transition (metastable state). This does not
harm the device, but there is no guarantee as to the value that
is captured. Repeatable results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus
hold times (tCS and tCH). The SRAM clock input might not be
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK captured in the
boundary scan register.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
prior to the selection of another boundary scan test operation.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO pins. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
EXTEST
The EXTEST instruction enables the preloaded data to be
driven out through the system output pins. This instruction also
selects the boundary scan register to be connected for serial
access between the TDI and TDO in the shift-DR controller
state.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller be
able to put the output bus into a tri-state mode.
The boundary scan register has a special bit located at bit
#108. When this scan cell, called the “extest output bus
tri-state,” is latched into the preload register during the
“Update-DR” state in the TAP controller, it directly controls the
state of the output (Q-bus) pins, when the EXTEST is entered
as the current instruction. When HIGH, it enables the output
buffers to drive the output bus. When LOW, this bit places the
output bus into a High-Z condition.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the “Shift-DR” state. During “Update-DR”, the value
loaded into that shift-register cell latches into the preload
register. When the EXTEST instruction is entered, this bit
directly controls the output Q-bus pins. Note that this bit is
pre-set LOW to enable the output when the device is
powered-up, and also when the TAP controller is in the
“Test-Logic-Reset” state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required—that is, while data
captured is shifted out, the preloaded data can be shifted in.
Document #: 38-05615 Rev. *D
Page 12 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
TAP Controller State Diagram[9]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
1
SELECT
DR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
0
SHIFT-DR
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-DR
0
0
PAUSE-IR
1
1
0
EXIT2-DR
EXIT2-IR
1
1
UPDATE-DR
1
0
SHIFT-IR
1
0
1
SELECT
IR-SCAN
0
UPDATE-IR
1
0
Note:
9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document #: 38-05615 Rev. *D
Page 13 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
TAP Controller Block Diagram
0
Bypass Register
Selection
Circuitry
2
TDI
1
0
1
0
Selection
Circuitry
TDO
Instruction Register
31 30 29
.
.
2
Identification Register
106 .
.
.
.
2
1
0
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics Over the Operating Range[15, 18, 10]
Parameter
Description
Test Conditions
Min
VOH1
Output HIGH Voltage
IOH = −2.0 mA
1.4
VOH2
Output HIGH Voltage
IOH = −100 µA
1.6
VOL1
Output LOW Voltage
IOL = 2.0 mA
IOL = 100 µA
VOL2
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input and OutputLoad Current
GND ≤ VI ≤ VDD
Max
Unit
V
V
0.4
V
0.2
V
0.65VDD
VDD + 0.3
V
–0.3
0.35VDD
V
−5
5
µA
Note:
10. These characteristic pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
Document #: 38-05615 Rev. *D
Page 14 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
TAP AC Switching Characteristics Over the Operating Range[11, 12]
Parameter
Description
Min
Max
Unit
20
MHz
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH
20
ns
tTL
TCK Clock LOW
20
ns
tTMSS
TMS Setup to TCK Clock Rise
5
ns
tTDIS
TDI Setup to TCK Clock Rise
5
ns
tCS
Capture Setup to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
50
ns
Setup Times
Hold Times
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
0
ns
ns
TAP Timing and Test Conditions[12]
0.9V
50Ω
ALL INPUT PULSES
1.8V
TDO
0.9V
Z0 = 50Ω
0V
CL = 20 pF
tTH
tTL
GND
(a)
Test Clock
TCK
tTCYC
tTMSS
tTMSH
Test Mode Select
TMS
tTDIS
tTDIH
Test Data-In
TDI
Test Data-Out
TDO
tTDOV
tTDOX
Notes:
11. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
12. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Document #: 38-05615 Rev. *D
Page 15 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Identification Register Definitions
Value
Instruction Field
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
000
000
000
000
Revision Number
(31:29)
Cypress Device ID
(28:12)
Description
Version number.
11010011010000111 11010011010001111 11010011010010111 11010011010100111 Defines the type of
SRAM.
Cypress JEDEC ID
(11:1)
00000110100
00000110100
00000110100
00000110100
1
1
1
1
ID Register Presence
(0)
Unique identification of SRAM
vendor.
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan Cells
109
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the Input/Output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between
TDI and TDO. This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the Input/Output contents. Places the boundary scan register
between TDI and TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the Input/Output ring contents. Places the boundary scan register
between TDI and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not
affect SRAM operation.
Document #: 38-05615 Rev. *D
Page 16 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
28
10G
56
6A
84
1J
1
6P
29
9G
57
5B
85
2J
2
6N
30
11F
58
5A
86
3K
3
7P
31
11G
59
4A
87
3J
4
7N
32
9F
60
5C
88
2K
5
7R
33
10F
61
4B
89
1K
6
8R
34
11E
62
3A
90
2L
7
8P
35
10E
63
2A
91
3L
8
9R
36
10D
64
1A
92
1M
9
11P
37
9E
65
2B
93
1L
10
10P
38
10C
66
3B
94
3N
11
10N
39
11D
67
1C
95
3M
12
9P
40
9C
68
1B
96
1N
13
10M
41
9D
69
3D
97
2M
14
11N
42
11B
70
3C
98
3P
15
9M
43
11C
71
1D
99
2N
16
9N
44
9B
72
2C
100
2P
17
11L
45
10B
73
3E
101
1P
18
11M
46
11A
74
2D
102
3R
19
9L
47
10A
75
2E
103
4R
20
10L
48
9A
76
1E
104
4P
21
11K
49
8B
77
2F
105
5P
22
10K
50
7C
78
3F
106
5N
23
9J
51
6C
79
1G
107
5R
24
9K
52
8A
80
1F
108
Internal
25
10J
53
7A
81
3G
26
11J
54
7B
82
2G
27
11H
55
6B
83
1H
Document #: 38-05615 Rev. *D
Page 17 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Power Up Sequence in QDR-II SRAM[13, 14]
DLL Constraints
QDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
• DLL uses either K or C clock as its synchronizing input.The
input must have low phase jitter, which is specified as tKC Var.
Power Up Sequence
• The DLL functions at frequencies down to 80MHz.
• Apply power and drive DOFF LOW (All other inputs can be
HIGH or LOW)
— Apply VDD before VDDQ
— Apply VDDQ before VREF or at the same time as VREF
• If the input clock is unstable and the DLL is enabled, then
the DLL may lock to an incorrect frequency, causing
unstable SRAM behavior.
• After the power and clock (K, K, C, C) are stable take DOFF
HIGH
• The additional 1024 cycles of clocks are required for the
DLL to lock.
~
~
Power Up Waveforms
K
K
~
~
Unstable Clock
> 1024 Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix High (or tied to VDDQ)
Notes:
13. It is recommended that the DOFF pin be pulled HIGH via a pull up resistor of 1 Kohm.
14. During Power Up, when the DOFF is tied HIGH, the DLL gets locked after 1024 cycles of stable clock.
Document #: 38-05615 Rev. *D
Page 18 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
DC Input Voltage[18]............................... –0.5V to VDD + 0.3V
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied........................................... ––55°C to +125°C
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA
Operating Range
Supply Voltage on VDD Relative to GND........ –0.5V to +2.9V
Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD
DC Voltage Applied to Outputs
in High-Z State .................................... –0.5V to VDDQ + 0.3V
Range
Ambient
Temperature (TA)
VDD[19]
VDDQ[19]
0°C to +70°C
1.8 ± 0.1V
1.4V to VDD
Com’l
Ind’l
–40°C to +85°C
Electrical Characteristics Over the Operating Range[15, 19]
DC Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
VDD
Power Supply Voltage
1.7
1.8
1.9
V
VDDQ
IO Supply Voltage
1.4
1.5
VDD
V
VOH
Output HIGH Voltage
Note 16
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOL
Output LOW Voltage
Note 17
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH = −0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOL = 0.1 mA, Nominal Impedance
VSS
0.2
V
VIH
Input HIGH Voltage[18]
VREF + 0.1
VDDQ+0.3
V
VIL
Input LOW Voltage[18]
–0.3
VREF – 0.1
V
IX
Input Leakage Current
GND ≤ VI ≤ VDDQ
−5
5
µA
IOZ
Output Leakage Current
GND ≤ VI ≤ VDDQ, Output Disabled
−5
5
µA
VREF
Input Reference Voltage[20] Typical Value = 0.75V
IDD
VDD Operating Supply
ISB1
Automatic Power down
Current
VDD = Max., IOUT = 0
mA, f = fMAX = 1/tCYC
0.68
0.75
0.95
V
740
mA
167 MHz
200 MHz
870
mA
250 MHz
1065
mA
Max. VDD, Both Ports 167 MHz
Deselected, VIN ≥ VIH 200 MHz
or VIN ≤ VIL, f = fMAX =
250 MHz
1/tCYC, Inputs Static
270
mA
300
mA
350
mA
AC Input Requirements Over the Operating Range
Min
Typ
Max
Unit
VIH
Parameter
Input High (Logic 1) Voltage
Description
Test Conditions
VREF + 0.2
–
–
V
VIL
Input Low (Logic 0) Voltage
–
–
VREF – 0.2
V
Capacitance[21]
Parameter
Description
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CO
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VDD = 1.8V
VDDQ = 1.5V
Max
Unit
5
pF
4
pF
5
pF
Notes:
15. All voltage referenced to Ground.
16. Output are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
17. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
18. Overshoot: VIH(AC) < VDDQ +0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > –1.5V (Pulse width less than tCYC/2).
19. Power up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH< VDD and VDDQ< VDD.
20. VREF (Min.) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max.) = 0.95V or 0.54VDDQ, whichever is smaller.
21. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05615 Rev. *D
Page 19 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Thermal Resistance[21]
Parameter
Description
Thermal Resistance
ΘJA
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
according to EIA/JESD51.
165 FBGA
Package
17.2
Unit
°C/W
3.2
°C/W
AC Test Loads and Waveforms
VREF = 0.75V
VREF
0.75V
VREF
OUTPUT
Z0 = 50Ω
Device
Under
Test
ZQ
RL = 50Ω
VREF = 0.75V
RQ =
250Ω
0.75V
R = 50Ω
ALL INPUT PULSES
1.25V
0.75V
OUTPUT
Device
Under
Test ZQ
5 pF
[22]
0.25V
Slew Rate = 2 V/ns
RQ =
250Ω
(a)
(b)
Note:
22. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input
pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads.
Document #: 38-05615 Rev. *D
Page 20 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Switching Characteristics Over the Operating Range [22, 23]
250 MHz
Cypress Consortium
Parameter Parameter
Description
VDD(Typical) to the first Access
tPOWER
Min
[26]
Max
1
200 MHz
Min
Max
1
167 MHz
Min
Max
1
Unit
ms
tCYC
tKHKH
K Clock and C Clock Cycle Time
4.0
6.3
5.0
7.9
6.0
8.4
ns
tKH
tKHKL
Input Clock (K/K and C/C) HIGH
1.6
–
2.0
–
2.4
–
ns
tKL
tKLKH
Input Clock (K/K and C/C) LOW
1.6
–
2.0
–
2.4
–
ns
tKHKH
tKHKH
K Clock Rise to K Clock Rise and C to C Rise
(rising edge to rising edge)
1.8
–
2.2
–
2.7
–
ns
tKHCH
tKHCH
K/K Clock Rise to C/C Clock Rise (rising edge
to rising edge)
0.0
1.8
0.0
2.2
0.0
2.7
ns
Setup Times
tSA
tAVKH
Address Setup to K Clock Rise
0.35
–
0.4
–
0.5
–
ns
tSC
tIVKH
Control Setup to K Clock Rise (RPS, WPS)
0.35
–
0.4
–
0.5
–
ns
tSCDDR
tIVKH
Double Data Rate Control Setup to Clock
(K, K) Rise (BWS0, BWS1, BWS3, BWS4)
0.35
–
0.4
–
0.5
–
ns
tSD
tDVKH
D[X:0] Setup to Clock (K/K) Rise
0.35
–
0.4
–
0.5
–
ns
Hold Times
tHA
tKHAX
Address Hold after K Clock Rise
0.35
–
0.4
–
0.5
–
ns
tHC
tKHIX
Control Hold after K Clock Rise (RPS, WPS)
0.35
–
0.4
–
0.5
–
ns
tHCDDR
tKHIX
Double Data Rate Control Hold after Clock
(K, K) Rise (BWS0, BWS1, BWS3, BWS4)
0.35
–
0.4
–
0.5
–
ns
tHD
tKHDX
D[X:0] Hold after Clock (K/K) Rise
0.35
–
0.4
–
0.5
–
ns
–
0.45
–
0.45
–
0.50
ns
–
–0.45
–
-0.50
–
ns
–
0.45
–
0.45
–
0.50
ns
–0.45
–
–0.45
–
–0.50
–
ns
–
0.30
–
0.35
–
0.40
ns
–0.30
–
–0.35
–
–0.40
–
ns
–
0.45
–
0.45
–
0.50
ns
–0.45
–
–0.45
–
–0.50
–
ns
–
0.20
–
0.20
–
0.20
ns
Output Times
tCO
tCHQV
C/C Clock Rise (or K/K in Single Clock Mode)
to Data Valid
tDOH
tCHQX
Data Output Hold after Output C/C Clock Rise –0.45
(Active to Active)
tCCQO
tCHCQV
C/C Clock Rise to Echo Clock Valid
tCQOH
tCHCQX
Echo Clock Hold after C/C Clock Rise
tCQD
tCQHQV
Echo Clock High to Data Valid
tCQDOH
tCQHQX
Echo Clock High to Data Invalid
tCHZ
tCHQZ
Clock (C/C) Rise to High-Z
(Active to High-Z)[24,25]
tCLZ
tCHQX1
Clock (C/C) Rise to Low-Z[24,25]
DLL Timing
tKC Var
tKC Var
Clock Phase Jitter
tKC lock
tKC lock
DLL Lock Time (K, C)
1024
–
1024
–
1024
–
cycles
tKC Reset
tKC Reset
K Static to DLL Reset
30
–
30
–
30
–
ns
Notes:
23. All devices can operate at clock frequencies as low as 119 MHz. When a part with a maximum frequency above 133 MHz is operating at a lower clock frequency,
it requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range.
24. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
25. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
26. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a read or write operation
can be initiated.
27. For D2 data signal on CY7C1425AV18 device, tSD is 0.5 ns for 200 MHz, and 250 MHz frequencies.
Document #: 38-05615 Rev. *D
Page 21 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Switching Waveforms[28, 29, 30]
Read/Write/Deselect Sequence
READ
WRITE
READ
WRITE
READ
WRITE
NOP
WRITE
NOP
1
2
3
4
5
6
7
8
9
10
K
tKH
tKL
tKHKH
tCYC
K
RPS
tSC
t HC
WPS
A
D
A1
A2
tSA tHA
tSA tHA
D11
D30
A0
D10
A3
A4
A5
D31
D50
D51
tSD
Q00
t CLZ
C
tKL
tKH
tKHCH
D60
D61
tSD tHD
tHD
Q
tKHCH
A6
Q01
tDOH
tCO
Q20
Q21
Q41
Q40
tCQDOH
t CHZ
tCQD
t CYC
tKHKH
C
tCQOH
tCCQO
CQ
tCQOH
tCCQO
CQ
DON’T CARE
UNDEFINED
Notes:
28. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0 + 1.
29. Output are disabled (High-Z) one clock cycle after a NOP.
30. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole
diagram.
Document #: 38-05615 Rev. *D
Page 22 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit
www.cypress.com for actual products offered.
Speed
(MHz)
167
Ordering Code
CY7C1410AV18-167BZC
Package
Diagram
Package Type
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Operating
Range
Commercial
CY7C1425AV18-167BZC
CY7C1412AV18-167BZC
CY7C1414AV18-167BZC
CY7C1410AV18-167BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1425AV18-167BZXC
CY7C1412AV18-167BZXC
CY7C1414AV18-167BZXC
CY7C1410AV18-167BZI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
CY7C1425AV18-167BZI
CY7C1412AV18-167BZI
CY7C1414AV18-167BZI
CY7C1410AV18-167BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1425AV18-167BZXI
CY7C1412AV18-167BZXI
CY7C1414AV18-167BZXI
200
CY7C1410AV18-200BZC
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Commercial
CY7C1425AV18-200BZC
CY7C1412AV18-200BZC
CY7C1414AV18-200BZC
CY7C1410AV18-200BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1425AV18-200BZXC
CY7C1412AV18-200BZXC
CY7C1414AV18-200BZXC
CY7C1410AV18-200BZI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
CY7C1425AV18-200BZI
CY7C1412AV18-200BZI
CY7C1414AV18-200BZI
CY7C1410AV18-200BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1425AV18-200BZXI
CY7C1412AV18-200BZXI
CY7C1414AV18-200BZXI
250
CY7C1410AV18-250BZC
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Commercial
CY7C1425AV18-250BZC
CY7C1412AV18-250BZC
CY7C1414AV18-250BZC
CY7C1410AV18-250BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1425AV18-250BZXC
CY7C1412AV18-250BZXC
CY7C1414AV18-250BZXC
Document #: 38-05615 Rev. *D
Page 23 of 25
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit
www.cypress.com for actual products offered.
Speed
(MHz)
250
Package
Diagram
Ordering Code
CY7C1410AV18-250BZI
Operating
Range
Package Type
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
CY7C1425AV18-250BZI
CY7C1412AV18-250BZI
CY7C1414AV18-250BZI
CY7C1410AV18-250BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1425AV18-250BZXI
CY7C1412AV18-250BZXI
CY7C1414AV18-250BZXI
Package Diagram
165-Ball FBGA (15 x 17 x 1.40 mm) (51-85195)
"/44/- 6)%7
4/0 6)%7
Œ - # ! "
Œ
0). #/2.%2
Œ - #
0). #/2.%2
8
!
"
"
#
#
!
$
$
&
&
'
'
(
*
%
¼
%
(
*
+
,
,
+
-
-
.
.
0
0
2
2
!
"
¼
#
¼
¼
#
8
./4%3 3/,$%2 0!$ 490% ./. 3/,$%2 -!3+ $%&).%$ .3-$
0!#+!'% 7%)'(4 G
*%$%# 2%&%2%.#% -/ $%3)'. #
0!#+!'% #/$% ""!$
-!8
3%!4).' 0,!.%
#
51-85195-*A
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, Hitachi, IDT, NEC, and Samsung
technology. All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05615 Rev. *D
Page 24 of 25
© Cypress Semiconductor Corporation, 2004-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for
the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended
to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document History Page
Document Title: CY7C1410AV18/CY7C1425AV18/CY7C1412AV18/CY7C1414AV18 36-Mbit QDR-II™ SRAM 2-Word Burst
Architecture
Document Number: 38-05615
REV.
ECN No.
Issue Date
Orig. of
Change
Description of Change
**
247331
See ECN
SYT
New Data Sheet
*A
326519
See ECN
SYT
Removed CY7C1425AV18 from the title
Included 300 MHz Speed grade
Replaced TBDs with their respective values for IDD and ISB1
Added Industrial temperature grade
Replaced the TBDs on the Thermal Characteristics Table to ΘJA = 17.2°C/W
and ΘJC = 3.2°C/W
Replaced TBDs in the Capacitance Table to their respective values for the
165 FBGA Package
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS
TRI-STATE on Page 16
Added Pb-free Product Information
Updated the Ordering Information by Shading and Unshading MPNs
according to availability
*B
413953
See ECN
NXR
Converted from preliminary to final.
Added CY7C1425AV18 part number to title.
Removed 300-MHz speed Bin.
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed C, C Description in Feature Section and Pin Description.
Added Power up sequence and Wave form on page# 19
Added foot notes # 13, 14, 15 on page# 19
Replaced Three-state with Tri-state.
Changed the description of IX from Input Load Current to Input Leakage
Current on page# 20
Modified the IDD and ISB values.
Modified test condition in Footnote # 20 on page# 20 from VDDQ < VDD to
VDDQ < VDD.
Replaced Package Name column with Package Diagram in the Ordering
Information table.
Updated Ordering Information Table.
*C
468029
See ECN
NXR
Modified the ZQ Definition from Alternately, this pin can be connected directly
to VDD to Alternately, this pin can be connected directly to VDDQ.
Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND
Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD.
Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH,
tTDIH, tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in TAP
AC Switching Characteristics table
Modified Power Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Changed the tSC and tHC value for 250 MHz from 0.5 ns to 0.35 ns,
for 200 MHz from 0.6 ns to 0.4 ns, and for 167 MHz from 0.7 ns to 0.5 ns.
Modified AC Switching Waveform.
Corrected the typo In the AC Switching Characteristics Table.
Updated the Ordering Information Table.
*D
1274725
See ECN
Document #: 38-05615 Rev. *D
VKN/AESA Modified footnote# 30
Page 25 of 25
Similar pages