IPB036N12N3 G OptiMOS™3 Power-Transistor Product Summary Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) V DS 120 V R DS(on),max 3.6 mΩ ID 180 A • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB036N12N3 G Package PG-TO263-7 Marking 036N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 180 T C=100 °C 139 Unit A Pulsed drain current2) I D,pulse T C=25 °C 720 Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 Ω 900 mJ Gate source voltage V GS ±20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 See figure 3 for more detailed information 3) See figure 13 for more detailed information 2) Rev. 2.2 page 1 2009-12-17 IPB036N12N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area4) - - 40 120 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 2.9 3.6 mΩ Gate resistance RG - 1.4 - Ω Transconductance g fs 98 195 - S |V DS|>2|I D|R DS(on)max, I D=100 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2009-12-17 IPB036N12N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 10400 13800 pF - 1320 1760 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 61 - Turn-on delay time t d(on) - 35 - Rise time tr - 52 - Turn-off delay time t d(off) - 76 - Fall time tf - 21 - Gate to source charge Q gs - 52 - Gate to drain charge Q gd - 37 - - 57 - V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=100 A, R G=1.6 Ω ns Gate Charge Characteristics 5) V DD=60 V, I D=100 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 158 211 Gate plateau voltage V plateau - 5.0 - Output charge Q oss - 182 242 nC - - 180 A - - 720 - 0.9 1.2 V - 123 - ns - 356 - nC V DD=60 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) Rev. 2.2 T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=37.5 V, I F=I S, di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2009-12-17 IPB036N12N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 350 200 180 300 160 140 120 200 I D [A] P tot [W] 250 150 100 80 60 100 40 50 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 200 T C [°C] 100 limited by on-state resistance 1 µs 10 µs 100 µs 0.5 102 Z thJC [K/W] I D [A] 1 ms DC 10-1 0.2 0.1 10 ms 10 1 0.05 0.02 0.01 single pulse 100 10-1 10-2 100 101 102 10-5 V DS [V] Rev. 2.2 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-12-17 IPB036N12N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 6 10 V 5V 350 7V 5 6V 5.5 V 300 6V 4 200 R DS(on) [mΩ] I D [A] 250 5.5 V 150 7V 10 V 3 2 100 5V 1 50 4.5 V 0 0 0 1 2 3 4 5 0 100 200 V DS [V] 300 400 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 250 350 200 300 250 g fs [S] I D [A] 150 200 100 150 100 50 50 175 °C 25 °C 0 0 0 2 4 6 8 Rev. 2.2 0 40 80 120 160 200 I D [A] V GS [V] page 5 2009-12-17 IPB036N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 8 4 7 3.5 6 3 5 2.5 2700 µA 270 µA V GS(th) [V] R DS(on) [mΩ] parameter: I D max 4 typ 2 3 1.5 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 Ciss 175 °C, max 104 25 °C 102 175 °C I F [A] C [pF] Coss 103 25 °C, max 10 Crss 1 102 101 100 0 20 40 60 80 V DS [V] Rev. 2.2 0 0.5 1 1.5 2 V SD [V] page 6 2009-12-17 IPB036N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 103 10 60 V 8 40 V 10 2 20 V 6 V GS [V] I AV [A] 25 °C 100 °C 150 °C 4 101 2 100 0 100 101 102 103 104 0 40 t AV [µs] 80 120 160 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 135 V GS Qg V BR(DSS) [V] 130 125 V g s(th) 120 115 Q g(th) Q sw Q gs 110 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.2 page 7 2009-12-17 IPB036N12N3 G PG-TO263-7 Rev. 2.2 page 8 2009-12-17 IPB036N12N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 9 2009-12-17