POINN BDX34D Pnp silicon power darlington Datasheet

BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
●
AUGUST 1993 - REVISED MARCH 1997
Designed for Complementary Use with
BDX33, BDX33A, BDX33B, BDX33C and
BDX33D
●
70 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
Minimum hFE of 750 at 3 V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDX34
BDX34B
-60
VCBO
-80
BDX34C
-100
BDX34D
-120
BDX34
BDX34B
V
-45
BDX34A
Collector-emitter voltage (IB = 0)
UNIT
-45
BDX34A
Collector-base voltage (IE = 0)
VALUE
-60
VCEO
BDX34C
-80
V
-100
BDX34D
-120
V EBO
-5
V
Continuous collector current
IC
-10
A
Continuous base current
IB
-0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
70
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Operating free air temperature range
TJ
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
Emitter-base voltage
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V (BR)CEO
ICEO
ICBO
IEBO
hFE
VBE(on)
TEST CONDITIONS
Collector-emitter
breakdown voltage
IC = -100 mA
VEC
(see Note 3)
-45
BDX34A
-60
BDX34B
-80
BDX34C
-100
BDX34D
-120
TYP
BDX34
-0.5
V CE = -30 V
IB = 0
BDX34A
-0.5
V CE = -40 V
IB = 0
BDX34B
-0.5
V CE = -50 V
IB = 0
BDX34C
-0.5
Collector-emitter
V CE = -60 V
IB = 0
BDX34D
-0.5
cut-off current
V CE = -30 V
IB = 0
TC = 100°C
BDX34
-10
V CE = -30 V
IB = 0
TC = 100°C
BDX34A
-10
V CE = -40 V
IB = 0
TC = 100°C
BDX34B
-10
V CE = -50 V
IB = 0
TC = 100°C
BDX34C
-10
V CE = -60 V
IB = 0
TC = 100°C
BDX34D
-10
VCB = -45 V
IE = 0
BDX34
-1
V CB = -60 V
IE = 0
BDX34A
-1
V CB = -80 V
IE = 0
BDX34B
-1
V CB = -100 V
IE = 0
BDX34C
-1
Collector cut-off
V CB = -120 V
IE = 0
BDX34D
-1
current
V CB = -45 V
IE = 0
TC = 100°C
BDX34
-5
V CB = -60 V
IE = 0
TC = 100°C
BDX34A
-5
V CB = -80 V
IE = 0
TC = 100°C
BDX34B
-5
V CB = -100 V
IE = 0
TC = 100°C
BDX34C
-5
V CB = -120 V
IE = 0
TC = 100°C
BDX34D
-5
VEB =
-5 V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
-10
VCE =
-3 V
IC = -4 A
BDX34
750
V CE =
-3 V
IC = -4 A
BDX34A
750
V CE =
-3 V
IC = -3 A
BDX34B
750
V CE =
-3 V
IC = -3 A
BDX34C
750
V CE =
-3 V
IC = -3 A
BDX34D
750
VCE =
-3 V
IC = -4 A
BDX34
-2.5
V CE =
-3 V
IC = -4 A
BDX34A
-2.5
V CE =
-3 V
IC = -3 A
BDX34B
-2.5
V CE =
-3 V
IC = -3 A
BDX34C
-2.5
(see Notes 3 and 4)
(see Notes 3 and 4)
-3 V
IC = -3 A
BDX34D
-2.5
IB =
-8 mA
IC = -4 A
BDX34
-2.5
IB =
-8 mA
IC = -4 A
BDX34A
-2.5
IB =
-6 mA
IC = -3 A
BDX34B
-2.5
IB =
-6 mA
IC = -3 A
BDX34C
-2.5
IB =
-6 mA
IC = -3 A
BDX34D
-2.5
IE =
-8 A
(see Notes 3 and 4)
IB = 0
PRODUCT
INFORMATION
UNIT
V
IB = 0
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
2
MAX
VCE = -30 V
V CE =
VCE(sat)
IB = 0
MIN
BDX34
-4
mA
mA
mA
V
V
V
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.78
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
TYP
ton
Turn-on time
IC = -3 A
IB(on) = -12 mA
IB(off) = 12 mA
1
µs
toff
Turn-off time
VBE(off) = 3.5 V
RL = 10 Ω
tp = 20 µs, dc ≤ 2%
5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
3
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS135AF
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = -3 V
t p = 300 µs, duty cycle < 2%
100
-0·5
-1·0
-10
TCS135AH
-2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
TC = -40°C
TC = 25°C
TC = 100°C
-0·5
-0·5
IC - Collector Current - A
-1·0
-10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS135AJ
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-10
IC - Collector Current - A
Figure 3.
PRODUCT
4
INFORMATION
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AB
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
PRODUCT
INFORMATION
5
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
6
INFORMATION
MDXXBE
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
INFORMATION
7
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