PD-96914 IRHMJ7250 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ® ™ TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) RDS(on) 0.10Ω 0.10Ω ID 26A 26A IRHMJ4250 600K Rads (Si) 0.10Ω 26A IRHMJ8250 1000K Rads (Si) 0.10Ω 26A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Tabless Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 26 16 104 150 1.2 ±20 500 26 15 5.0 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (for 5s) 8.0 (Typical) g For footnotes refer to the last page www.irf.com 1 12/24/04 IRHMJ7250 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 1.0mA — 0.27 — V/°C Reference to 25°C, ID = 1.0mA — — 2.0 8.0 — — — — — — — — 0.10 0.11 4.0 — 25 250 — — — — — — — — — — — — — — — — — — — 6.8 100 -100 170 30 60 33 140 140 140 — ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — Typ Max Units 4700 850 210 Ω V S( ) — — — Ω BVDSS µA nA nC ns nH pF Test Conditions VGS = 12V, ID = 16A VGS = 12V, ID = 26A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 16A VDS= 160V,VGS=0V VDS = 160V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 26A VDS = 100V VDD = 100V, ID = 26A, VGS = 12V, RG = 2.35Ω Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 26 104 1.4 820 12 Test Conditions A V nS µC Tj = 25°C, IS = 26A, VGS = 0V à Tj = 25°C, IF = 26A, di/dt ≤100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient Min Typ Max — — — — 0.83 0.21 — — 48 Units Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation Radiation Characteristics IRHMJ7250 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 600K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage à Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (TO-254AA) Diode Forward Voltage à Test Conditions 1000K Rads (Si)2 Units Min Max Min Max 200 2.0 — — — — — 4.0 100 -100 25 0.094 200 1.25 — — — — — 4.5 100 -100 50 0.149 µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS =160V, VGS =0V VGS = 12V, ID =16A — 0.10 — 0.155 Ω VGS = 12V, ID =16A — 1.4 — 1.4 V nA V VGS = 0V, IS = 26A 1. Part numbers IRHMJ7250, IRHMJ3250 and IRHMJ4250 2. Part number IRHMJ8250 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 Range VDS(V) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 190 180 170 125 — 39 100 100 100 50 — 200 VDS 150 Cu Br 100 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMJ7250 Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Post-Irradiation Pre-Irradiation Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure www.irf.com Pre-Irradiation Post-Irradiation IRHMJ7250 Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure www.irf.com Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation Fig 9. High Dose Rate (Gamma Dot) Test Circuit 5 RadiationPost-Irradiation Characteristics Pre-Irradiation IRHMJ7250 Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc Fig 10. Typical Output Characteristics Pre-Irradiation Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si) 6 Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) www.irf.com Pre-Irradiation Radiation Characteristics IRHMJ7250 Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc Fig 14. Typical Output Characteristics Pre-Irradiation Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) www.irf.com 7 IRHMJ7250 Fig 18. Typical Output Characteristics Fig 20. Typical Transfer Characteristics 8 Pre-Irradiation Fig 19. Typical Output Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHMJ7250 Fig 22. Typical CapacitanceVs. Drain-to-Source Voltage Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage Fig 25. Maximum Safe Operating Area www.irf.com 9 IRHMJ7250 Pre-Irradiation V DS V GS RD D.U.T. RG + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 26a. Switching Time Test Circuit VDS 90% Fig 26. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 26b. Switching Time Waveforms Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 www.irf.com Pre-Irradiation IRHMJ7250 15V D.U.T. RG VGS 20V DRIVER L VDS + - VDD IAS tp A 0.01Ω Fig 28a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 28c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 28b. Unclamped Inductive Waveforms 50KΩ QG 12 V QGS .2µF .3µF D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 29a. Basic Gate Charge Waveform www.irf.com 12V IG ID Current Sampling Resistors Fig 29b. Gate Charge Test Circuit 11 IRHMJ7250 Pre-Irradiation Foot Notes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 1.5mH Peak IL = 26A, VGS = 12V  ISD ≤ 26A, di/dt ≤ 190A/µs, VDD ≤ 200V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 160 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-254AA Tabless NOT ES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. T HIS OUT LINE IS A MODIFIED T O-254AA JEDEC OUT LINE. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2004 12 www.irf.com