ETL G2306 N - c h a n n e l e n h a n c e m e n t m o d e p o w e r m o s f e t Datasheet

Pb Free Plating Product
CORPORATION
G2306
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
BVDSS
RDS(ON)
ID
20V
32m
5.3A
Description
The G2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
Features
Capable of 2.5V gate drive
Lower on-resistance
Reliable and Rugged
Applications
Power Management in Notebook Computer
Portable Equipment
Battery Powered System.
Package Dimensions
REF.
A
B
C
D
E
F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, [email protected]
3
Continuous Drain Current , [email protected]
1,2
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
20
12
5.3
4.3
10
1.38
0.01
-55 ~ +150
Symbol
Rthj-a
Ratings
90
Unit
/W
1/4
CORPORATION
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
BVDSS
20
-
-
V
-
0.1
-
0.5
-
1.2
BVDSS/ Tj
Breakdown Voltage Temperature Coefficient
VGS(th)
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
V/
Test Conditions
VGS=0, ID=250uA
Reference to 25
V
VDS= VGS, ID=250uA
Forward Transconductance
gfs
-
13
-
S
VDS=5.0V, ID=5.3A
Gate-Source Leakage Current
IGSS
-
-
100
nA
VGS=
-
-
1
uA
VDS=20V, VGS=0
-
-
10
uA
VDS=16V, VGS=0
-
-
30
-
-
35
-
-
50
Drain-Source Leakage Current(Tj=25
)
Drain-Source Leakage Current(Tj=70
)
Static Drain-Source On-Resistance
IDSS
RDS(ON)
, ID=1mA
12V
ID=5.5A, VGS =10V
m
ID=5.3A, VGS =4.5V
ID=2.6A, VGS =2.5V
ID=1.0A, VGS =1.8V
-
-
90
Qg
-
8.7
-
Gate-Source Charge
Qgs
-
1.5
-
Gate-Drain (“Miller”) Change
Qgd
-
3.6
-
VGS=4.5V
Td(on)
-
6
-
Tr
-
14
-
Td(off)
-
18.4
-
ns
Tf
-
2.8
-
VDS=15V
ID=1A
VGS=10V
RG=2
RD=15
Input Capacitance
Ciss
-
603
-
Output Capacitance
Coss
-
144
-
pF
Reverse Transfer Capacitance
Crss
-
111
-
VGS=0V
VDS=15V
f=1.0MHz
VSD
-
-
1.2
V
IS=1.2A, VGS=0 Tj=25
IS=5.0A,VGS=0
dI/dt=100A/ s
Total Gate Charge2
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
ID=5.3A
nC
VDS=10V
Source-Drain Diode
Forward On Voltage2
Reverse Recovery Time
Trr
-
16.8
-
ns
Reverse Recovery Charge
Qrr
-
11
-
nC
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270 /w when mounted on min. copper pad.
Characteristics Curve
2/4
CORPORATION
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
3/4
CORPORATION
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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