ADPOW APTGF90DU60T Dual common source npt igbt power module Datasheet

APTGF90DU60T
Dual common source
NPT IGBT Power Module
VCES = 600V
IC = 90A @ Tc = 80°C
Application
· AC Switches
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
C1
Features
C2
·
Q1
Q2
G1
G2
E1
E2
E
NTC1
NTC2
·
·
G2
C2
E2
C1
C2
E
E1
E2
NTC2
G1
G2
NTC1
Non Punch Through (NPT) THUNDERBOLT IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
·
·
Benefits
· Outstanding performance at high frequency
operation
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Easy paralleling due to positive TC of VCEsat
· Low profile
Absolute maximum ratings
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
600
110
90
315
±20
416
315A @ 600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF90DU60T – Rev 1 March, 2004
Symbol
VCES
APTGF90DU60T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, IC = 100µA
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 90A
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = 20 V, VCE = 0V
Min
600
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Typ
2.0
2.2
3
Max
100
1000
2.5
Unit
V
µA
V
5
±150
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Td(on)
Tr
Td(off)
Tf
Eon
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy u
Turn-off Switching Energy v
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
VGS = 15V
VBus = 300V
IC = 90A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 W
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 W
Typ
4300
470
400
330
290
200
26
25
150
30
3.35
2.85
26
25
170
40
4.3
pF
nC
ns
mJ
ns
mJ
3.5
Reverse diode ratings and characteristics
VF
Reverse Recovery Time
Qrr
Reverse Recovery Charge
50% duty cycle
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 400V
di/dt =400A/µs
IF = 60A
VR = 400V
di/dt =400A/µs
Diode Forward Voltage
trr
Test Conditions
Min
Tj = 125°C
Typ
60
1.6
1.9
1.4
Tj = 25°C
85
Tj = 125°C
160
Tj = 25°C
260
Tj = 125°C
1400
Tc = 70°C
Max
Unit
A
1.8
V
ns
nC
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APT website – http://www.advancedpower.com
2-6
APTGF90DU60T – Rev 1 March, 2004
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
APTGF90DU60T
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
Max
0.3
0.65
2500
Unit
°C/W
V
-40
-40
-40
150
125
100
4.7
160
M5
°C
N.m
g
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
Min
Typ
68
4080
Max
Unit
kW
K
R25
T: Thermistor temperature
é
æ 1 1 öù RT: Thermistor value at T
expê B25 / 85 çç
- ÷÷ú
è T25 T øû
ë
APT website – http://www.advancedpower.com
3-6
APTGF90DU60T – Rev 1 March, 2004
Package outline
APTGF90DU60T
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
300
Tc=-55°C
250µs Pulse Test
< 0.5% Duty cycle
300
250
Ic, Collector Current (A)
Tc=25°C
200
150
Tc=125°C
100
50
250µs Pulse Test
< 0.5% Duty cycle
250
200
Tc=25°C
150
100
Tc=125°C
50
0
0
0
1
2
3
VCE, Collector to Emitter Voltage (V)
0
4
1
VGE, Gate to Emitter Voltage (V)
200
150
100
TJ=25°C
50
TJ=125°C
TJ=-55°C
0
VCE, Collector to Emitter Voltage (V)
0
1
2 3 4 5 6 7 8 9
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=180A
5
4
3
Ic=90A
2
Ic=45A
1
0
6
8
10
12
14
VGE, Gate to Emitter Voltage (V)
IC = 90A
TJ = 25°C
16
14
4
VCE=120V
VCE=300V
12
10
VCE=480V
8
6
4
2
0
0
10
VCE, Collector to Emitter Voltage (V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
3
Gate Charge
18
250
2
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
300
50
100 150 200 250
Gate Charge (nC)
300
350
On state Voltage vs Junction Temperature
4
3.5
Ic=180A
3
2.5
Ic=90A
2
1.5
Ic=45A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
16
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
160
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
Tc=-55°C
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
140
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTGF90DU60T – Rev 1 March, 2004
Ic, Collector Current (A)
350
APTGF90DU60T
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
30
VGE = 15V
25
Tj = 25°C
VCE = 400V
RG = 5Ω
20
15
25
50
75
100
125
ICE, Collector to Emitter Current (A)
250
200
VGE=15V,
TJ=125°C
150
100
50
150
25
Current Rise Time vs Collector Current
100
125
150
Current Fall Time vs Collector Current
VCE = 400V
RG = 5Ω
60
VCE = 400V, VGE = 15V, RG = 5Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
75
80
VGE=15V,
TJ=125°C
40
20
0
60
TJ = 125°C
40
20
TJ = 25°C
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
25
Eoff, Turn-off Energy Loss (mJ)
VCE = 400V
RG = 5Ω
TJ=125°C,
VGE=15V
4
TJ=25°C,
VGE=15V
2
0
0
25
50
75
100
125
4
Eoff, 90A
8
Eon, 90A
Eoff, 45A
4
Eon, 45A
0
0
10
20
30
40
Gate Resistance (Ohms)
50
TJ = 25°C
3
2
1
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
Switching Energy Losses vs Junction Temp.
10
Switching Energy Losses (mJ)
12
Eoff, 180A
TJ = 125°C
0
150
Switching Energy Losses vs Gate Resistance
16
Eon, 180A
VCE = 400V
VGE = 15V
RG = 5Ω
5
ICE, Collector to Emitter Current (A)
VCE = 400V
VGE = 15V
TJ = 125°C
150
6
8
6
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
Eon, Turn-On Energy Loss (mJ)
50
ICE, Collector to Emitter Current (A)
80
Switching Energy Losses (mJ)
VGE=15V,
TJ=25°C
VCE = 400V
RG = 5Ω
VCE = 400V
VGE = 15V
RG = 5Ω
8
Eon, 180A
Eoff, 180A
6
Eon, 90A
4
Eoff, 90A
2
Eoff, 45A
Eon, 45A
0
0
25
50
75
100
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
125
5-6
APTGF90DU60T – Rev 1 March, 2004
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
35
APTGF90DU60T
Capacitance vs Collector to Emitter Voltage
Minimum Switching Safe Operating Area
10000
350
IC, Collector Current (A)
C, Capacitance (pF)
Cies
1000
Coes
Cres
300
250
200
150
100
50
0
100
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
0
50
200
400
600
800
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25
0.9
0.7
0.2
0.1
0.5
0.3
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
120
1
10
Operating Frequency vs Collector Current
VCE = 400V
D = 50%
RG = 5Ω
TJ = 125°C
100
80
60
40
20
0
20
40
60
80
100
IC, Collector Current (A)
120
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTGF90DU60T – Rev 1 March, 2004
0.15
Fmax, Operating Frequency (kHz)
Thermal Impedance (°C/W)
0.35
Similar pages