HABC817(NPN) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : BC817 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: HABC807(PNP) SOT-23 MAXIMU MRATINGS (T A = 25°C unless otherwise noted) Parameter Symbol Collector-Base Voltage 1: BASE 2：EMITTER 3: COLLECTOR Value Unit VCBO 50 V MARKING: Collector-Emitter Voltage VCEO 45 V HABC817-16 6A Emitter-Base Voltage VEBO 5 V HABC817-25 6C Collector Current -Continuous IC 500 mA HABC817-40 6C Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C Thermal Resistance Junction to Ambient RθJA 417 °C /w ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Parameter Symbol Test Collector-Base Breakdown Voltage VCBO IC=10μA , IE=0 50 V Collector-Emitter Breakdown Voltage VCEO IC=10mA , IB=0 45 V Emitter-Base Breakdown Voltage VEBO IE=1μA , IC=0 5 V Collector Cut-off Current ICBO VCB=45V , IE=0 0.1 μA Emitter Cut-off Current IEBO VEB=4V , IC=0 0.1 μA hFE(1) VCE=1V , IC=100mA 100 hFE(2) VCE=1V , IC=500mA 40 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA , IB=50mA 0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA , IB=50mA 1.2 V Base-Emitter Voltage VB VCE=1V , IC=500mA 1.2 V Collector Capacitance Cob VCB=10V , f=1MHz Transition Frequency fT VCE=5V , IC= 10mA DC Current Gain Min Max Unit 600 10 pF 100 MHz CLASSIFICATION OF hFE Rank Range ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD 6A 6B 6C 100-250 160-400 250-600 E-mail:[email protected] 1/4 HABC817(NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics Static Characteristic COLLECTOR CURRENT IC (mA) hFE —— 500 1mA 0.9mA 240 0.8mA 200 COMMON EMITTER Ta=25℃ 0.6mA 0.5mA 120 Ta=100 C 400 0.7mA 160 IC o DC CURRENT GAIN hFE 280 0.4mA 0.3mA 300 o Ta=25 C 200 80 0.2mA 40 VCE= 1V IB=0.1mA 0 100 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VCE 14 16 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1.0 Ta=25℃ 0.6 Ta=100℃ 500 100 VCEsat —— 0.4 β=10 0.8 10 COLLECTOR CURRENT VBEsat —— IC 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 1 (V) IC (mA) IC β=10 0.3 0.2 Ta=100℃ 0.1 0.4 Ta=25℃ 0.2 0.1 1 10 IC 500 —— IC 0.0 0.1 500 100 COLLECTOR CURRENT 1 (mA) 10 100 COLLECTOR CURRENT VBE Cob / Cib 100 —— IC VCB / VEB f=1MHz IE=0 / IC=0 IC (mA) 50 o Ta=25 C CAPACITANCE C (pF) COLLECTOR CURRENT 100 o Ta=100 C 10 Ta=25℃ 500 (mA) Cib 10 1 Cob VCE=1V 0.1 0.3 1 0.4 0.5 0.6 0.7 0.8 —— 0 5 10 REVERSE VOLTAGE IC Pc 0.4 COLLECTOR POWER DISSIPATION Pc (W) TRANSITION FREQUENCY fT (MHz) fT 1.0 VBE(V) BASE-EMITTER VOLTAGE 300 0.9 100 —— V (V) Ta 0.3 0.2 0.1 VCE=5V o Ta=25 C 10 0.0 1 60 10 COLLECTOR CURRENT IC ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD (mA) 0 25 50 75 AMBIENT TEMPERATURE E-mail:[email protected] 100 Ta 125 150 (℃ ) 2/4 HABC817(NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 RE F L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 3/4 HABC817(NPN) GENERAL PURPOSE TRANSISTOR SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 φ1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Traller SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 φ178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 4/4