UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G G D S TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP5N50F FDPF5N50FT 500 Units V ±30 -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) V 4.5 4.5* 2.7 2.7* IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ dv/dt Peak Diode Recovery dv/dt 18* (Note 2) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC A 233 (Note 3) (TC = 25oC) PD TL 18 A mJ 4.5 V/ns 85 28 W 0.67 0.22 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP5N50F FDPF5N50FT RθJC Symbol Thermal Resistance, Junction to Case Parameter 1.4 4.5 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2012 Fairchild Semiconductor Corporation FDP5N50F / FDPF5N50FT Rev. C1 1 Units o C/W www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET May 2012 Device Marking FDP5N50F Device FDP5N50F Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF5N50FT FDPF5N50FT TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ID = 250μA, Referenced to 25oC - 0.6 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 2.25A - 1.25 1.55 Ω gFS Forward Transconductance VDS = 20V, ID = 2.25A - 4.3 - S - 490 650 pF - 66 88 pF - 5 7.5 pF - 11 15 nC - 3 - nC - 5 - nC - 13 36 ns - 22 54 ns - 28 66 ns - 20 50 ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 18 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4.5A - - 1.5 V trr Reverse Recovery Time - 65 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5A dIF/dt = 100A/μs - 120 - nC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L =23 mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP5N50F / FDPF5N50FT Rev. C1 2 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 2. Transfer Characteristics 10 20 1 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] Figure 1. On-Region Characteristics o 150 C o 25 C 1 *Notes: 1. 250μs Pulse Test 0.1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.04 0.1 1 VDS,Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 VGS,Gate-Source Voltage[V] 50 IS, Reverse Drain Current [A] 2.0 1.8 VGS = 10V VGS = 20V 1.6 1.4 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o 1.2 *Note: TJ = 25 C 0 4 8 12 ID, Drain Current [A] 16 0.2 0.0 20 2. 250μs Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 1000 10 750 Ciss VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.2 RDS(ON) [Ω], Drain-Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz 500 Coss 250 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] FDP5N50F / FDPF5N50FT Rev. C1 0 30 3 *Note: ID = 5A 0 3 6 9 Qg, Total Gate Charge [nC] 12 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDP5N50F 30 1.1 1.0 0.9 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] o 0.01 175 Figure 9. Maximum Safe Operating Area - FDPF5N50FT 30 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 10. Maximum Drain Current 5 30μs 10 100μs 4 1ms ID, Drain Current [A] ID, Drain Current [A] 30μs 100μs 10 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: 2 o 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP5N50F Thermal Response [ZθJC] 3 1 0.5 0.2 0.1 0.1 t1 0.02 0.01 *Notes: t2 o 0.01 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.003 -5 10 FDP5N50F / FDPF5N50FT Rev. C1 PDM 0.05 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF5N50FT Thermal Response [ZθJC] 10 0.5 1 0.2 0.1 0.1 t1 0.02 0.01 t2 *Notes: o 0.01 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 FDP5N50F / FDPF5N50FT Rev. C1 PDM 0.05 -4 10 -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 5 2 10 3 10 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5N50F / FDPF5N50FT Rev. C1 6 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP5N50F / FDPF5N50FT Rev. C1 7 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Mechanical Dimensions TO-220 FDP5N50F / FDPF5N50FT Rev. C1 8 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDP5N50F / FDPF5N50FT Rev. C1 9 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDP5N50F / FDPF5N50FT Rev. C1 10 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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