IRF IPS6044GPBF Intelligent power high side switch Datasheet

Data sheet No. PD60350
IPS6044GPbF
INTELLIGENT POWER HIGH SIDE SWITCH
Features
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Product Summary
Over temperature shutdown (with auto-restart)
Short circuit protection (current limit)
Reverse battery protection (turns On the MOSFET)
Full diagnostic capability (short circuit to battery)
Active clamp
Open load detection in On and Off state
Ground loss protection
Logic ground isolated from power ground
ESD protection
Rds(on)
Vclamp
I Limit
Open load
130mΩ max.
39V
7A
3V / 0.22A
Package
Description
The IPS6044GPbF is quad output Intelligent Power Switch
(IPS) for use in a high side configuration. It features short
circuit, over-temperature, ESD protection, inductive load
capability and diagnostic feedback. The output current is
limited to the Ilim value. The current limitation is activated
until the thermal protection acts. The over-temperature
protection turns off the device if the junction temperature
exceeds the Tshutdown value. It will automatically restart
after the junction has cooled 7°C below the Tshutdown
value. The reverse battery protection turns On the
MOSFET. A diagnostic pin provides different voltage
levels for each fault condition. The double level shifter
circuitry will allow large offsets between the logic and load
ground.
SO28 Wide body
Typical Connection
+5V
+Bat
Vcc
Rdgp
Dg
Pull-up resistors required for
open load off and short
circuit to Vbat detection
Control
Rdgs
In
Gnd
Out
V Diag
Rin
Input Signal
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Load
1
IPS6044GPbF
†
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Automotive
(per AEC-Q100††)
Comments: This family of ICs has passed an Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SOIC28W
MSL2, 260°C
(per IPC/JEDEC J-STD-020)
Class B
(per JEDEC standard JESD22-A115)
Class 1C
(per EIA/JEDEC standard EIA/JESD22-A114)
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
†† Exceptions to AEC-Q100 requirements are noted in the qualification report.
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2
IPS6044GPbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Parameter
Vout
Voffset
Vin
Vcc max.
Vcc cont.
Iin max.
Idg max.
Vdg
Maximum output voltage
Maximum logic ground to load ground offset
Maximum input voltage
Maximum Vcc voltage
Maximum continuous Vcc voltage
Maximum IN current
Maximum diagnostic output current
Maximum diagnostic output voltage
Maximum power dissipation (internally limited by thermal protection)
Rth=130°C/W per channel
Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω
Between In and Vcc
Other combinations
Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω,L=10µH
Between In and Vcc
Other combinations
Max. storage & operating temperature junction temperature
Soldering temperature (10 seconds)
Pd
ESD
Tj max.
Tsoldering
Min.
Max.
Units
Vcc-35 Vcc+0.3
Vcc-35 Vcc+0.3
-0.3
5.5
⎯
36
⎯
28
-3
10
-3
10
-0.3
5.5
V
mA
V
W
⎯
3.8
⎯
⎯
1500
4000
⎯
⎯
⎯
100
500
150
300
°C
°C
Typ.
Max.
Units
50
100
130
⎯
⎯
⎯
°C/W
-40
V
Thermal Characteristics
Symbol
Parameter
Rth1
Thermal resistance junction to ambient 1” sqrt. Footprint / 1 channel On
Rth2
Thermal resistance junction to ambient 1” sqrt. Footprint / 2 channels On
Rth3
Thermal resistance junction to ambient 1” sqrt. Footprint / 4 channels On
note : Tj=Power dissipated in one channel x Rth
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
Parameter
VIH
VIL
Iout
High level input voltage
Low level input voltage
Continuous drain current, Rth=130°C/W, Tj=150°C, 4 channels On
Tambient=85°C / 1” sqrt. footprint
Tambient=105°C / 1” sqrt. footprint
Recommended resistor in series with IN pin
Recommended resistor in series with DG pin for reverse battery protection
Recommended pull-up resistor for DG
Recommended pull-up resistor for open load detection
Max. switching frequency
Rin
Rdgs
Rdgp
Rol
F max.
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Min.
Max.
4
0
5.5
0.9
⎯
⎯
1.5
1.2
10
20
20
100
3.5
4
4
4
5
⎯
Units
A
kΩ
kHz
3
IPS6044GPbF
Static Electrical Characteristics
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol
Parameter
Rds(on)
ON state resistance Tj=25°C
ON state resistance Tj=150°C(1)
ON state resistance Tj=25°C, Vcc=6V
ON state resistance during reverse battery
Operating voltage range
Vcc to Out clamp voltage 1
Vcc to Out clamp voltage 2
Supply current when Off
Supply current when On
Input high threshold voltage
Input low threshold voltage
Input hysteresis
Input current when device is On
Dg leakage current
Low level DG voltage
Vcc op.
V clamp 1
V clamp 2
Icc Off
Icc On
Vih
Vil
In hyst.
Iin On
Idg
Vdg
Min.
Typ.
Max.
⎯
⎯
⎯
⎯
110
190
125
140
130
230
155
180
28
6
37
⎯
⎯
⎯
⎯
1.5
0.2
⎯
⎯
⎯
⎯
39
40
4
2.2
2.5
2
0.5
45
0.1
0.25
Units
Test Conditions
mΩ
Vin=5V, Iout=2.5A
Vin=5V, Iout=2.5A
Vin=5V, Iout=1.5A
Vcc-Gnd=14V
⎯
V
42
9
5
2.9
µA
mA
⎯
V
1
100
10
0.4
µA
V
Iout=20mA
Iout=2.5A (see Fig. 1)
Vin=0V, Vout=0V
Vin=5V
Vin=5V
Vdg=5V
Idg=1.6mA
Switching Electrical Characteristics
Vcc=14V, Resistive load=6Ω, Vin=5V, Tj=25°C
Symbol
Parameter
Tdon
Tr1
Tr2
dV/dt (On)
EOn
Tdoff
Tf
dV/dt (Off)
EOff
Turn-on delay time
Rise time to Vout=Vcc-5V
Rise time to Vout=0.9 x Vcc
Turn On dV/dt
Turn On energy
Turn-off delay time
Fall time to Vout=0.1 x Vcc
Turn Off dV/dt
Turn Off energy
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Min.
Typ.
Max.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
3
4
2.5
100
10
3
6.5
50
15
10
20
5
⎯
20
10
20
⎯
Units
Test Conditions
µs
V/µs
µJ
see Fig. 3
µs
V/µs
µJ
4
IPS6044GPbF
Protection Characteristics
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
4
150(1)
7
165
158
3
5
10
A
Vout=0V
⎯
⎯
°C
See fig. 2
Ilim
Tsd+
TsdVsc
UV
UV hyst.
VOL Off
Internal current limit
Over temperature high threshold
Over temperature low threshold
Short-circuit detection voltage(2)
0.25
2
⎯
Open load detection threshold
3
4
5.9
1.6
4
I OL On
Open load detection threshold
0.05
0.15
0.22
⎯
2
⎯
Test Conditions
V
A
(1) Guaranteed by design
(2) Reference to Vcc
True Table
Operating Conditions
IN
OUT
DG
Normal
H
H
H
Normal
L
L
H
Open Load
H
H
L
Open Load (3)
L
H
L
Short circuit to Gnd
H
L
L
Short circuit to Gnd
L
L
H
Short circuit to Vcc
H
H
L (4)
Short circuit to Vcc (5)
L
H
L
Over-temperature
H
L
L
Over-temperature
L
L
H
(3) With a pull-up resistor connected between the output and Vcc.
(4) Vds lower than 10mV.
(5) Without a pull-up resistor connected between the output and Vcc.
Lead Assignments
1- Vcc
2- GND1
3- IN1
4- DG1
5- DG2
6- IN2
7- GND2
8- GND3
9- IN3
10- DG3
11- DG4
12- IN4
13- GND4
14- VCC
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15- Vcc
16- OUT4
17- OUT4
18- OUT4
19- OUT3
20- OUT3
21- OUT3
22- OUT2
23- OUT2
24- OUT2
25- OUT1
26- OUT1
27- OUT1
28- Vcc
28
15
1
14
SO28
5
IPS6044GPbF
Functional Block Diagram
All values are typical
VCC
165°C
Tj
37V
Charge
Pump
158°C
43V
Vcc-gnd >UV
2.5V
6V
150kΩ
IN
Level
Shifter
43V
Driver
2.0V
Over-temp
+
I sense
I Limit
Open load off
+
DG
6V
Short circuit
3V
+
3V
Open load on
Ground
Disconnect
+
20mV
GND
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OUT
6
IPS6044GPbF
T clamp
Vin
Vin
Iout
limiting
Thermal cycling
Ilim
Ids
Tj
Vcc
Tsd+
Tsd-
Vds
DG
Vds clamp
See Application Notes to evaluate power dissipation
Figure 1 – Active clamp waveforms
Figure 2 – Protection timing diagram
90%
Vin
Vcc
Dg
10%
Tr-in
In
Gnd
Vclamp
Out
+
14V
-
L
Vcc
90%
Vcc-5V
5V
Vin
Vout
0V
10%
Td on
Td off
Tf
Tr1
Vout
Rem :
During active
clamp, Vload
is negative
R
Iout
Tr2
Figure 3 – Switching times definitions
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Figure 4 – Active clamp test circuit
7
IPS6044GPbF
200%
250
200
Eon
150
100
Eoff
50
0
0
1
2
3
4
5
Rds(on), Drain-to-Source On Resistance
(Normalized)
Eon, Eoff, switching energy (µJ)
300
150%
100%
50%
-50
Iout, Output current (A)
0
50
150
Tj, junction temperature (°C)
Figure 5 – Switching energy (µJ) Vs Output
current (A)
Figure 6 - Normalized Rds(on) (%) Vs Tj (°C)
10
3
Ids, cont. Output current (A)
2.5
Iout, Output current (A)
100
1
100°C/W
2
1.5
1
0.5
0
0.1
0.1
1
10
100
Load inductance (mH)
Figure 7 – Max. Output current (A) Vs Load
inductance (mH)
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1000
-50
0
50
100
150
Tamb, Ambient temperature (°C)
Figure 8 – Max. ouput current (A)
Vs Ambient temperature (°C)
8
IPS6044GPbF
8
6
10.0
I limit (A)
Zth, transient thermal impedance (°C/W)
100.0
1.0
4
2
0
0.1
1.E-04
1.E-03
1.E-02
-50
1.E-01
0
Time (s)
Figure 10 –I limit (A)
Vs junction temperature (°C)
1.E+4
Icc on/ Icc off, supply current (µA)
1.E+4
Icc on/ Icc off, supply current (µA)
100
Tj, junction temperature (°C)
Figure 9 – Transient thermal impedance (°C/W)
Vs time (s)
1.E+3
Icc on
Icc off
1.E+2
1.E+1
1.E+0
0
5
10
15
20
25
Vcc, power supply voltage (V)
Figure 11 – Icc on/ Icc off (µA) Vs Vcc (V)
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50
30
1.E+3
Icc on
Icc off
1.E+2
1.E+1
1.E+0
-50
0
50
100
150
Tj, junction temperature (°C)
Figure 12 – Icc on/ Icc off (µA) Vs Tj (°C)
9
IPS6044GPbF
Case Outline – SO28
The information provided in this document is believed to be accurate and reliable. However, International Rectifier
assumes no responsibility for the consequences of the use of this information. International Rectifier assumes no
responsibility for any infringement of patents or of other rights of third parties which may result from the use of this
information. No license is granted by implication or otherwise under any patent or patent rights of International
Rectifier. The specifications mentioned in this document are subject to change without notice. This document
supersedes and replaces all information previously supplied.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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10
IPS6044GPbF
Revision History
Revision
A
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Date
Notes/Changes
25/04/08
First release
11
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