ON NTD4809NT4G Power mosfet 30 v, 58 a, single n--channel, dpak/ipak Datasheet

NTD4809N
Power MOSFET
30 V, 58 A, Single N--Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb--Free Devices
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V(BR)DSS
Applications
• CPU Power Delivery
• DC--DC Converters
• Low Side Switching
RDS(on) MAX
9.0 mΩ @ 10 V
30 V
D
Value
Unit
VDSS
30
V
VGS
20
V
ID
11.5
A
S
4
Continuous Drain
Current (RθJA) (Note 1)
TA = 25°C
Power Dissipation
(RθJA) (Note 1)
TA = 25°C
PD
2.0
W
Continuous Drain
Current (RθJA) (Note 2)
TA = 25°C
ID
9.0
A
Power Dissipation
(RθJA) (Note 2)
TA = 85°C
Steady
State
9.0
TA = 85°C
7.0
PD
1.3
W
Continuous Drain
Current (RθJC)
(Note 1)
TC = 25°C
ID
58
A
Power Dissipation
(RθJC) (Note 1)
TC = 25°C
TC = 85°C
tp=10ms
Current Limited by Package
45
PD
52
TA = 25°C
IDM
130
A
TA = 25°C
IDmaxPkg
45
A
TJ, Tstg
-- 55 to
175
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
4
4
1 2
TA = 25°C
Pulsed Drain Current
N--Channel
G
1
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
2 3
1
2
3
CASE 369AD
CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
W
IS
43
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain--to--Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 13.5 A, RG = 25 Ω)
EAS
91.0
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
YWW
48
09NG
Gate--to--Source Voltage
Symbol
YWW
48
09NG
Drain--to--Source Voltage
58 A
14 mΩ @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
4
Drain
YWW
48
09NG
•
•
•
•
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
WW
4809N
G
= Year
= Work Week
= Device Code
= Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 11
1
Publication Order Number:
NTD4809N/D
NTD4809N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction--to--Case (Drain)
Parameter
RθJC
2.9
°C/W
Junction--to--TAB (Drain)
RθJC--TAB
3.5
Junction--to--Ambient -- Steady State (Note 1)
RθJA
74
Junction--to--Ambient -- Steady State (Note 2)
RθJA
116
1. Surface--mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain--to--Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain--to--Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
1.5
5.7
VGS = 10 to
11.5 V
ID = 30 A
7.0
ID = 15 A
7.0
VGS = 4.5 V
ID = 30 A
12
ID = 15 A
11
VDS = 15 V, ID = 15 A
mV/°C
9.0
mΩ
14
9.0
S
1456
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate--to--Source Charge
QGS
Gate--to--Drain Charge
Total Gate Charge
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
200
11
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
QGD
QG(TOT)
315
13
nC
2.5
4.8
5.0
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
25
nC
12.3
ns
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 Ω
21.3
15.1
tf
5.3
td(on)
7.0
tr
td(off)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 Ω
tf
22.7
25.3
2.8
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD4809N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
TJ = 25°C
0.95
1.2
V
TJ = 125°C
0.83
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
19.5
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
ns
10.7
8.8
QRR
9.2
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
2.4
PACKAGE PARASITIC VALUES
TA = 25°C
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3
1.88
Ω
NTD4809N
TYPICAL PERFORMANCE CURVES
100
6V
6.5 V
5.5 V
120
TJ = 25°C
5V
90
80
VDS ≥ 10 V
4.5 V
70
60
4.2 V
50
40
4V
3.8 V
30
20
3.6 V
3.4 V
3.2 V
0
1
2
5
4
3
60
40
TJ = 125°C
TJ = 25°C
20
TJ = --55°C
0
1
2
4
3
5
6
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 1. On--Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
RDS(on), DRAIN--TO--SOURCE RESISTANCE
(NORMALIZED)
80
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
0.045
0
100
0
3
4
6
5
7
8
9
10
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
10
0
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
7V
0.020
TJ = 25°C
0.015
VGS = 4.5 V
0.010
VGS = 11.5 V
0.005
0
10
15
20
25
30
35
40
50
45
55
60
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
100,000
2.0
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 175°C
10,000
IDSS, LEAKAGE (nA)
ID, DRAIN CURRENT (AMPS)
110
ID, DRAIN CURRENT (AMPS)
120
1.5
1.0
0.5
--50 --25
1000
TJ = 125°C
100
10
0
25
50
75
100
125
150
175
5
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 5. On--Resistance Variation with
Temperature
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
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4
25
NTD4809N
TYPICAL PERFORMANCE CURVES
VDS = 0 V
TJ = 25°C
Ciss
2000
C, CAPACITANCE (pF)
VGS = 0 V
Ciss
1500
Crss
1000
500
Coss
0
10
Crss
5
VGS
0
VDS
5
10
15
25
20
12
VGS , GATE--TO--SOURCE VOLTAGE (VOLTS)
2500
9
8
7
6
5
3
2
ID = 30 A
0 V < VGS < 11.5 V
1
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 1011121314151617181920212223242526
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate--To--Source and Drain--To--Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
30
IS, SOURCE CURRENT (AMPS)
VDD = 15 V
ID = 30 A
VGS = 11.5 V
t, TIME (ns)
100
td(off)
tr
10
1
td(on)
tf
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
25
15
10
5
0
0.5
100
1 ms
0.1
0.01
0.01
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
dc
1
10
100
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
EAS, SINGLE PULSE DRAIN--TO--SOURCE
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (AMPS)
100 ms
VGS = 20 V
SINGLE PULSE
TA = 25°C
0.7
0.8
0.9
1.0
Figure 10. Diode Forward Voltage vs. Current
10 ms
10
0.6
VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
1000
100
TJ = 25°C
20
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1
Q2
Q1
4
GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS)
1000
QT
11
10
120
ID = 15 A
100
80
60
40
20
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4809N
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
25°C
100°C
125°C
10
1
0.1
10
100
PULSE WIDTH (ms)
1
1000
Figure 13. Avalanche Characteristics
100
D = 0.5
r(t) (°C/W)
10
0.2
0.1
0.05
1
0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 14. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD4809NT4G
DPAK
(Pb--Free)
2500 Tape & Reel
NTD4809N--1G
IPAK
(Pb--Free)
75 Units/Rail
NTD4809N--35G
IPAK Trimmed Lead
(3.5  0.15 mm)
(Pb--Free)
75 Units/Rail
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4809N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 90° CW
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
------ 0.040
0.155
------
6.17
0.243
SCALE 3:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
-----1.01
3.93
------
NTD4809N
PACKAGE DIMENSIONS
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD--01
ISSUE O
E
A
E3
L2
E2
A1
D2
D
L1
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
L
T
SEATING
PLANE
A1
b1
2X
e
A2
3X
E2
b
0.13
M
T
D2
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
-----6.35
6.73
4.70
-----4.45
5.46
2.28 BSC
3.40
3.60
-----2.10
0.89
1.27
OPTIONAL
CONSTRUCTION
IPAK (STRAIGHT LEAD DPAK)
CASE 369D--01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
--T-SEATING
PLANE
K
J
F
D
G
H
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
------
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
------
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
3 PL
0.13 (0.005)
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
T
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTD4809N/D
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