MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 3 2.6 ± 0.2 2 3 1 • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diode (TYP.) ...........50ns • Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 1 GATE 2 DRAIN 3 SOURCE 1 2 TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Conditions VGS = 0V VDS = 0V Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value Ratings Unit –60 ±20 V V –20 –80 –20 –20 –80 25 A A A A A W –55 ~ +150 –55 ~ +150 2000 °C °C V 2.0 g Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX20KMJ-06 P HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Typ. Max. ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –60V, VGS = 0V –60 — — — — — — ±0.1 –0.1 V µA mA ID = –1mA, VDS = –10V ID = –10A, VGS = –10V ID = –10A, VGS = –4V ID = –10A, VGS = –10V ID = –10A, VDS = –10V –1.3 — — — –1.8 73 119 –0.73 –2.3 97 166 –0.97 V mΩ mΩ V — — — — 10.9 2370 306 147 — — — — S pF pF pF — — — — 15 37 131 72 — — — — ns ns ns ns — –1.0 –1.5 V — — — 50 5.00 — °C/W ns VDS = –10V, VGS = 0V, f = 1MHz VDD = –30V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = –10A, VGS = 0V Channel to case Thermal resistance Reverse recovery time Unit Min. IS = –20A, dis/dt = 100A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) –102 40 30 20 10 0 0 50 100 150 10µs –101 100µs –7 –5 1ms –3 –2 10ms TC = 25°C Single Pulse –100 –7 –5 DC –3 –2 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 200 OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) –20 VGS = –10V Tc = 25°C Pulse Test –30 –5V –20 –4V –10 –3V –2 –4 –6 –8 –10 DRAIN-SOURCE VOLTAGE VDS (V) Tc = 25°C Pulse Test VGS = –6V –8V –40 0 tw = –3 –2 DRAIN-SOURCE VOLTAGE VDS (V) PD = 25W 0 –7 –5 CASE TEMPERATURE TC (°C) –50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –2 –10V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 –16 –8V –4V –6V –12 –5V PD =25W –8 –4 0 –3V 0 –1.0 –2.0 –3.0 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX20KMJ-06 P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –8 –6 ID = –4 –40A –2 0 –10A 0 –2 –20A –4 –6 –8 Tc = 25°C Pulse Test 160 VGS = –4V 120 –10V 80 40 0 –10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –10 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) –50 102 Tc = 25°C VDS = –10V Pulse Test –40 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 200 Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –10 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) –30 –20 –10 VDS = –10V Pulse Test 7 5 4 3 2 TC = 75°C 125°C 25°C 101 7 5 4 3 2 0 0 –2 –4 –6 –8 100 0 –10 –10 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 7 5 4 3 3 2 Ciss Tch = 25°C f = 1MHZ VGS = 0V Coss 2 102 7 Crss 5 4 3 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 103 –2 –3 –4–5 –7–102 GATE-SOURCE VOLTAGE VGS (V) 3 2 –2 –3 –4 –5 –7–101 td(off) 102 tf 7 5 4 3 tr 2 td(on) 101 7 5 4 3 –5 –7 –100 Tch = 25°C VGS = –10V VDD = –30V RGEN = RGS = 50Ω –2 –3 –4–5 –7 –101 –2 –3 –4–5 DRAIN CURRENT ID (A) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX20KMJ-06 P HIGH-SPEED SWITCHING USE –10 SOURCE CURRENT IS (A) VGS = 0V Pulse Test VDS = –10V –20V –6 –40V –4 –2 0 10 20 30 40 75°C –20 25°C –10 0 –0.4 –0.8 –1.2 –1.6 –2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 VGS = –10V ID = 1/2ID Pulse Test 100 7 5 4 3 2 –50 0 50 100 VDS = –10V ID = –1mA –3.2 –2.4 –1.6 –0.8 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA 1.2 1.0 0.8 0.6 0.4 125°C GATE CHARGE Qg (nC) 2 10–1 TC = –30 0 101 7 5 4 3 –40 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) –50 Tch = 25°C ID = –20A –8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 0.5 3 2 0.2 100 7 5 3 2 10–1 7 5 0.1 0.05 PDM 0.02 0.01 Single Pulse tw T D= tw T 3 2 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999