Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. 2110 - 2170 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs • Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.5 dB Efficiency — 21% • Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz, 10 Watts CW Output Power Features • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel. CASE 360B - 05, STYLE 1 NI - 360 MRF21010LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF21010LSR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 43.75 0.25 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 5.5 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Class 1 (Minimum) M1 (Minimum) MRF21010LR1 MRF21010LSR1 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 V, ID = 50 μA) VGS(th) 2.5 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 2.5 4 4.5 Vdc Drain- Source On - Voltage (VGS = 10 V, ID = 0.5 A) VDS(on) — 0.4 0.5 Vdc Forward Transconductance (VDS = 10 V, ID = 1 A) gfs — 0.95 — S Crss — 1 — pF Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Gps 12 13.5 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) η 31 35 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) IMD — - 35 - 30 dBc Input Return Loss (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) IRL — - 12 - 10 dB P1dB — 11 — W Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Gps — 12 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) η — 42 — % Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID =10 μA) On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz) MRF21010LR1 MRF21010LSR1 2 RF Device Data Freescale Semiconductor VGG R1 C6 + C4 C3 C8 VDD C9 Z5 DUT Z1 C7 C5 Z4 RF INPUT + + R2 Z2 Z6 Z7 RF OUTPUT Z8 Z3 C10 C2 C1 Z1 Z2 Z3 Z4 Z5 0.964″ x 0.087″ Microstrip 0.905″ x 0.087″ Microstrip 0.433″ x 0.512″ Microstrip 1.068″ x 0.087″ Microstrip 0.752″ x 0.087″ Microstrip Z6 Z7 Z8 PCB 0.453″ x 1.118″ Microstrip 0.921″ x 0.154″ Microstrip 0.925″ x 0.087″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 Figure 1. MRF21010L Test Circuit Schematic Table 5. MRF21010L Test Circuit Component Designations and Values Part C1 * Description Part Number Manufacturer (eared) 2.2 pF Chip Capacitor 100B2R2BW ATC (earless) 1.8 pF Chip Capacitor 100B1R8BW ATC C2 0.5 pF Chip Capacitor 100B0R5BW ATC C3, C9 10 μF, 35 V Tantalum Chip Capacitors 293D106X9035D2T Sprague- Vishay C4, C7 1 nF Chip Capacitors 100B102JW ATC C5, C6 5.6 pF Chip Capacitors 100B5R6BW ATC C8 470 μF, 63 V Electrolytic Capacitor C10 10 pF Chip Capacitor 100B100GW ATC N1, N2 Type N Connector Flange Mounts 3052- 1648- 10 Macom R1 1.0 kW Chip Resistor (0805) R2 12 W Chip Resistor (0805) * Piece part depending on eared / earless version of the device. C8 VGG VDD C3 R1 C6 C7 R2 C9 C4 C5 RF Input C10 C2 RF Output CUTOUT AREA C1 MRF21010 C−XM−00−001−01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21010L Test Circuit Component Layout MRF21010LR1 MRF21010LSR1 RF Device Data Freescale Semiconductor 3 VGG R1 C1 C4 C5 T1 R2 R3 R4 C6 T2 C2 P1 R6 L5 R5 C3 C7 Ground V DD C8 L1 L2 L4 L3 C10 C9 MRF21010 C−XM−99−001−01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. MRF21010L Demonstration Board Component Layout Table 6. MRF21010L Demonstration Board Component Designations and Values Designators Description C1 1 mF Chip Capacitor (0805), AVX #08053G105ZATEA C2, C6 10 mF, 35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D C3, C4 6.8 pF Chip Capacitors, ACCU - P (0805), AVX #08051J6R8CBT C5 10 nF Chip Capacitor (0805), AVX #08055C103KATDA C7 1.5 pF Chip Capacitor, ACCU - P (0805), AVX #08051J2R2BBT C8, C10 0.5 pF Chip Capacitors, ACCU - P (0805), AVX #08051J0R5BBT C9 10 pF Chip Capacitor, ACCU - P (0805), AVX #08055J100GBT L1 19 mm × 1.07 mm L2 7.7 mm × 13.8 mm L3 9.3 mm × 22 mm L4 17.7 mm × 3.5 mm L5 3.4 mm × 1.5 mm R1, R6 10 W, 1/8 W Chip Resistors (0805) R2, R3 1 kW, 1/8 W Chip Resistors (0805) R4 2.2 kW, 1/8 W Chip Resistor (0805) R5 0 W, 1/8 W Chip Resistor (0805) P1 5 kW Potentiometer CMS Cermet Multi - Turn, Bourns #3224W T1 Voltage Regulator, Micro - 8, #LP2951 T2 Bipolar NPN Transistor, SOT - 23, #BC847 PCB Rogers RO4350, 0.5 mm, εr = 3.53 MRF21010LR1 MRF21010LSR1 4 RF Device Data Freescale Semiconductor −5 −10 30 IRL 25 −15 VDD = 28 Vdc, Pout = 10 W (PEP), IDQ = 100 mA Two Tone Measurement, 100 kHz Tone Spacing 20 −20 15 −25 10 Gps −30 5 IMD −35 0 2000 2140 2110 2170 f, FREQUENCY (MHz) 2080 2200 −40 2280 VDD = 28 Vdc, IDQ = 130 mA, f = 2140 MHz Channel Spacing 5 MHz, BW 4.096 MHz 25 (15 Channels) η 20 10 −35 −40 80 mA 100 mA −45 150 mA −50 130 mA −55 −60 0.1 1 10 100 −40 −50 ACPR 5 0.5 1 2 1.5 2.5 3 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA −20 VDD = 28 Vdc, IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing −25 3rd Order −30 −35 −40 5th Order −45 −50 −55 7th Order −60 −65 −70 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power Figure 7. Intermodulation Distortion Products versus Output Power 14.5 15 Pout = 10 W (PEP), IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 14.0 150 mA 130 mA 100 mA 13.0 80 mA 12.5 12.0 0.1 100 −30 VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing 13.5 −60 3.5 Figure 5. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −30 VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing −30 Gps 15 Figure 4. Class AB Broadband Circuit Performance −25 −20 −32 −34 14 Gps −36 −38 13 IMD −40 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain versus Output Power 100 12 22 26 28 30 VDD, DRAIN VOLTAGE (VOLTS) −42 32 Figure 9. Intermodulation and Gain versus Supply Voltage MRF21010LR1 MRF21010LSR1 RF Device Data Freescale Semiconductor ACPR, ADJACENT CHANNEL POWER RATIO (dB) η 35 −10 30 5 IMD, INTERMODULATION DISTORTION (dBc) 0 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS f = 1990 MHz Zo = 10 Ω Zload f = 2230 MHz f = 1990 MHz Zsource f = 2230 MHz VDD = 28 V, IDQ = 100 mA, Pout = 10 W PEP f MHz Zsource Ω Zload Ω 1990 2.85 - j4.38 2.93 - j1.71 2110 2.89 - j5.04 2.76 - j2.28 2230 2.73 - j6.19 2.83 - j2.59 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF21010LR1 MRF21010LSR1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q aaa 2X G B M T A M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 3 B (FLANGE) 2 D bbb M T A K 2X 2X M B M R (LID) N ccc (LID) T A M M B ccc M C E T M (INSULATOR) A M T A M B M F H S SEATING PLANE bbb M (INSULATOR) T A M B aaa M M T A M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 360B - 05 ISSUE G NI - 360 MRF21010LR1 A A (FLANGE) B 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 2 B (FLANGE) 2X D bbb M T A M 2X K B M R (LID) ccc N M T A M (LID) ccc M T A M B M B M F H E C S (INSULATOR) PIN 3 T M (INSULATOR) bbb M T A M B SEATING PLANE M aaa M T A M 360C - 05 ISSUE E NI - 360S MRF21010LSR1 B M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF21010LR1 MRF21010LSR1 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21010LR1 MRF21010LSR1 Document Number: MRF21010 8Rev. 9, 5/2006 RF Device Data Freescale Semiconductor