NSS1C201L, NSV1C201L 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com 100 VOLTS, 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE Features • NSV Prefix for Automotive and Other Applications Requiring • 2 EMITTER Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO 100 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 2.0 A ICM 3.0 A Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 490 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 255 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 710 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 176 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Rating Collector Current − Continuous Collector Current − Peak 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM VT MG G THERMAL CHARACTERISTICS Characteristic Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ 100 mm2, 1 oz. copper traces. 2. FR− 4 @ 500 mm2, 1 oz. copper traces. © Semiconductor Components Industries, LLC, 2008 October, 2016 − Rev. 6 1 1 VT = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS1C201LT1G, NSV1C201LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS1C201L/D NSS1C201L, NSV1C201L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 140 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc 100 Vdc 140 Vdc 7.0 nAdc 100 nAdc 50 ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.01 A) (IC = 0.5 A, IB = 0.05 A) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.100 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) 150 120 80 40 240 360 V 0.030 0.060 0.090 0.150 V 0.950 V 0.850 fT MHz 110 Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Cibo 230 pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 14 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. TYPICAL CHARACTERISTICS PD, POWER DERATING (W) 0.8 0.7 Note 2 0.6 0.5 0.4 Note 1 0.3 0.2 0.1 0 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 1. Power Derating www.onsemi.com 2 140 NSS1C201L, NSV1C201L TYPICAL CHARACTERISTICS 400 300 25°C 250 200 150 −55°C 100 0.01 0.1 1 25°C 250 200 150 −55°C 100 0 10 0.1 −55°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC/IB = 20 150°C 25°C 0.1 −55°C 0.01 0.001 VBE(sat), BASE−EMITTER SATURATION (V) VBE(sat), BASE−EMITTER SATURATION (V) IC/IB = 10 −55°C 0.8 25°C 0.6 150°C 0.4 0.01 0.1 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Voltage 1.2 1.0 10 1 Figure 4. Collector−Emitter Saturation Voltage 0.001 1 Figure 3. DC Current Gain 25°C 0.2 0.1 Figure 2. DC Current Gain 150°C 0.001 0.01 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.01 0.001 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER SATURATION (V) 0.001 1 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 300 50 50 0 VCE = 4 V 150°C 350 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 350 400 VCE = 2 V 150°C 10 1.2 IC/IB = 50 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage Figure 7. Base−Emitter Saturation Voltage www.onsemi.com 3 10 NSS1C201L, NSV1C201L 1.2 1 VCE = 2 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 0.01 0.1 1 COB, OUTPUT CAPACITANCE (pF) 150 100 50 0 1 2 3 4 5 6 7 8 0.1 1 TJ = 25°C fTEST = 1 MHz 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 80 60 40 20 0.01 90 100 10 TJ = 25°C fTEST = 1 MHz VCE = 2 V 0.001 45 VEB, EMITTER BASE VOLTAGE (V) IC, COLLECTOR CURRENT (A) CIB, INPUT CAPACITANCE (pF) fTau, CURRENT GAIN BANDWIDTH (MHz) 0.01 50 TJ = 25°C fTEST = 1 MHz 200 0 0.001 Figure 9. Collector Saturation Region 250 100 0.0001 Figure 8. Base Emitter Voltage 300 120 IC = 0.1 A IB, BASE CURRENT (A) 350 140 0.5 A 0.1 IC, COLLECTOR CURRENT (A) 400 0 1A 0.01 10 3A 2A 0.1 10 mS 1 Thermal Limit 0.1 0.01 1 1 mS 100 mS 0.1 1 10 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area www.onsemi.com 4 100 NSS1C201L, NSV1C201L 1000 D = 0.5 R(t), (°C/W) 100 D = 0.2 D = 0.1 D = 0.05 10 D = 0.02 D = 0.01 1 0.1 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 14. Transient Thermal Resistnce www.onsemi.com 5 1.0 10 100 1000 NSS1C201L, NSV1C201L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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