MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters (inches) OUTLINE DRAWING The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 24±0.3 (0.945±0.012) (0.024±0.006) 0.6±0.15 FEATURES Class A operation Internally matched to 50 (Ω) system High output power P1dB=30W (TYP.) @f=2.1~2.3GHz High power gain GLP=12dB (TYP.) @f=2.1~2.3GHz High power added efficiency ηadd=45% (TYP.) @f=2.1~2.3GHz Loe distortion [item -51] IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L. R1.2 20.4±0.2 (0.803±0.008) APPLICATION item 01 : 2.1~2.3GHz band power amplifier item 51 : 2.1~2.3GHz band digital radio communication 16.7 (0.658) QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=6.5A RG=25Ω GF-38 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol (1) GATE (2) Source (FLANGE) (3) DRAIN Parameter < Keep safety first in your circuit designs! > Ratings Unit Mitsubishi Electric Corporation puts the maximum effort into VGDO Gate to drain voltage -15 V VGSO Gate to source voltage -15 V ID Drain current 22 A IGR Reverse gate current -61 mA IGF Forward gate current 76 mA PT Total power dissipation 88 W Tch Channel temperature 175 °C -65 ~ +175 °C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur *1 Tstg Storage temperature *1 : Tc=25°C with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS (Ta=25°C) Symbol Test conditions Parameter VGS (off) Saturated drain current P1dB Output power at 1dB gain compression GLP Linear power gain ID Drain current ηadd Power added efficiency VDS=3V, ID=60mA VDS=10V, ID(RF off)=6.5A, f=2.1~2.3GHz IM3 3rd order IM distortion *1 Rth (ch-c) Thermal resistance *2 ∆Vf method *1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.1, 2.2, 2.3GHz,∆f=5MHz *2 : Channel to case MITSUBISHI ELECTRIC Limits Unit Min. Typ. Max — — -5 V 44 45 — dBm 11 12 — dB — 7.5 — A — 45 — % -42 -45 — dBc — — 1.7 °C/W MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET TYPICAL CHARACTERISTICS Po, ηadd vs. Pin P1dB,GLP vs. Freq. 46 17 VDS=10V IDS=6.5A 50 70 VDS=10V IDS=6.5A f=2.2GHz P1dB 45 16 44 15 45 60 Po 40 35 GLP 43 40 ηadd 14 42 41 2.05 50 30 30 25 20 13 2.10 2.15 2.20 2.25 Frequency (GHz) 2.30 12 2.35 20 10 15 20 25 30 35 Input power Pin (dBm) Po,IM3 vs. Pin 40 0 VDS=10V IDS=6.5A f1=2.300GHz f2=2.305GHz 38 -10 Po 36 -20 34 -30 IM3 32 -40 30 -50 28 -60 15 17 19 21 23 25 Input power Pin (dBm S.C.L.) 27 29 S Parameters ( Tc=25˚C, VDS=10V, IDS=6.5A ) f (GHz) 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 Magn. 0.31 0.26 0.27 0.31 0.35 0.37 0.38 0.36 0.32 S11 Angle(deg) -34 -77 -120 -153 -178 161 143 126 107 Magn. 4.76 4.96 5.02 4.99 4.88 4.79 4.69 4.62 4.56 S-Parameter (TYP.) S21 S12 Angle(deg) Magn. Angle(deg) 148 0.031 123 129 0.032 99 109 0.035 76 0.035 90 53 73 0.034 31 56 0.034 17 39 0.035 -4 22 0.036 -22 5 0.037 -39 MITSUBISHI ELECTRIC Magn. 0.39 0.34 0.30 0.28 0.29 0.30 0.33 0.36 0.40 S22 Angle(deg) 17 -2 -26 -51 -72 -92 -109 -123 -134 40