DAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com CATHODE 3 Features • Fast trr • Low CD • Pb−Free Packages are Available 1 ANODE 2 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc Peak Forward Current IFM 300 mAdc Peak Forward Surge Current (Note 1) IFSM 2.0 Adc Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 °C/W Storage Temperature Range Tstg −55 to +150 °C Reverse Voltage Peak Reverse Voltage Forward Current 1 SC−75/SOT−416 CASE 463 STYLE 3 THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 mS MARKING DIAGRAM N9 M G G 1 N9 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † DAN222 SC−75/SOT−416 3000/Tape & Reel DAN222G SC−75/SOT−416 3000/Tape & Reel (Pb−Free) DAN222T1 SC−75/SOT−416 3000/Tape & Reel DAN222T1G SC−75/SOT−416 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 4 1 Publication Order Number: DAN222/D DAN222 ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Characteristic Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V − 0.1 mAdc Forward Voltage VF IF = 100 mA − 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 mA 80 − Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz − 3.5 pF trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 4.0 ns Reverse Recovery Time 2. trr Test Circuit on following page. TYPICAL ELECTRICAL CHARACTERISTICS 10 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.0 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://onsemi.com 2 8 50 DAN222 tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 4. Reverse Recovery Time Test Circuit for the DAN222 http://onsemi.com 3 IF = 5.0 mA VR = 6 V RL = 100 W OUTPUT PULSE DAN222 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D 0.20 (0.008) E HE C INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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