IXFK 24N90Q IXFX 24N90Q HiPerFETTM Power MOSFETs Q-CLASS VDSS ID25 = = = RDS(on) 900 V 24 A 0.45 W trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 900 900 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 24 96 24 A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 500 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C G Maximum Ratings (TAB) D TO-264 AA (IXFK) G TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.4/6 PLUS 247 TO-264 6 10 Symbol Test Conditions VDSS VGS = 0 V, ID = 250uA 900 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2000 IXYS All rights reserved Nm/lb.in. g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 4.5 V ±100 nA TJ = 125°C 100 mA 2 mA 0.45 W D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l 98679B (08/00) IXFK 24N90Q IXFX 24N90Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 16 Ciss Coss 22 S 5900 pF 650 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 130 pF td(on) 25 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 21 ns td(off) RG = 1 W (External), 60 ns 12 ns 170 nC 38 nC 75 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.26 RthJC RthCK K/W 0.15 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 24 A ISM Repetitive; pulse width limited by TJM 96 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns trr QRM IF = IS,-di/dt = 100 A/ms, VR = 100 V IRM 1.4 mC 9 A Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025