AP6N3R5I
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
BVDSS
60V
RDS(ON)
3.58mΩ
ID
G
72A
S
Description
AP4604 series
AP6N3R5
seriesare
arefrom
fromAdvanced
Advanced Power
Power innovated design and
silicon
and
silicon
process
process
technology
technology
to to
achieve
achievethe
thelowest
lowest possible onon-resistance
resistance
andand
fast fast
switching
switching
performance.
performance.
It provides
It provides
the designer
the
designer
with anefficient
extremedevice
efficient
userange
in a wide
with an extreme
for device
use in aforwide
of power
range
of power applications.
applications.
The TO-220 package is widely preferred for all commercialindustrial
throughpackage
hole is
applications.
The for
lowall commercialthermal
The TO-220CFM
widely preferred
resistance
and low
package
cost contribute
the worldwide
industrial through
hole
applications.
The moldtocompound
provides
popular
a high package.
isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
72
A
ID@TC=100℃
Drain Current, VGS @ 10V
45
A
300
A
31.2
W
1.92
W
183
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201612132
AP6N3R5I
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=30A
-
-
3.58
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=5V, ID=30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
78
125
nC
Qgs
Gate-Source Charge
VDS=30V
-
26
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
24
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
17
-
ns
tr
Rise Time
ID=30A
-
58
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
35
-
ns
tf
Fall Time
VGS=10V
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
4500 7200
pF
Coss
Output Capacitance
VDS=30V
-
2800
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Rg
Gate Resistance
-
2.3
4.6
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=30A, VGS=0V
-
62
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
70
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=30V , L=0.3mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6N3R5I
400
200
o
o
T C =150 C
10V
9.0V
T C = 25 C
10V
9.0V
8.0V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
160
300
8.0V
7.0V
200
V G =6.0V
120
V G =6.0V
80
100
40
0
0
0
4
8
12
16
0
20
Fig 1. Typical Output Characteristics
4
6
8
10
Fig 2. Typical Output Characteristics
2.4
8
I D =30A
I D =30A
V G =10V
T C =25 o C
2.0
6
5
.
4
Normalized RDS(ON)
7
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.6
1.2
0.8
3
0.4
2
5
6
7
8
9
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
100
I D =250uA
Normalized VGS(th)
1.6
IS(A)
10
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
0.1
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6N3R5I
f=1.0MHz
8000
I D =30A
V DS =30V
10
6000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
4000
C oss
4
2000
2
C rss
0
0
0
20
40
60
80
1
100
21
Q G , Total Gate Charge (nC)
41
61
81
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
ID (A)
100
Operation in this area
limited by RDS(ON)
10us
10
100us
1
1ms
10ms
0.1
T C =25 o C
Single Pulse
DC
.
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.01
0.01
0.1
1
10
0.00001
100
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
160
ID , Drain Current (A)
ID , Drain Current (A)
V DS =5V
60
40
120
80
T j =150 o C
20
40
0
0
o
T j =25 C
o
T j = -55 C
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP6N3R5I
40
50
T j =25 o C
PD, Power Dissipation(W)
40
RDS(ON) (mΩ)
30
20
10
30
20
10
V GS =10V
0
0
0
20
40
60
80
100
0
120
50
100
150
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
2
I D =1mA
Normalized BVDSS
1.6
1.2
.
0.8
0.4
0
-100
-50
T
0
j
50
100
150
, Junction Temperature ( o C)
Fig 15. Normalized BVDSS v.s. Junction
Temperature
5
AP6N3R5I
MARKING INFORMATION
Part Number
6N3R5
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6