AOSMD AOD404 N-channel enhancement mode field effect transistor Datasheet

AOD404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD404 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 7mΩ (VGS = 10V)
RDS(ON) < 8mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
TO-252
D-PAK
Top View
D
Bottom View
D
G
G
S
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
B,G
Current
G
Maximum
30
Units
V
±12
V
85
TC=100°C B
ID
65
Pulsed Drain Current
IDM
200
Avalanche Current C
IAR
30
A
EAR
120
mJ
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
Power Dissipation
A
C
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Case
C
2.5
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.6
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
50
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
100
PD
TC=100°C
A
RθJA
RθJL
Typ
14.2
39
0.8
°C
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
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AOD404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
5
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
85
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
100
nA
2
V
5.4
7
8.4
10.5
6.6
8
mΩ
1
V
85
A
2520
pF
165
231
pF
0.95
1.2
Ω
19.7
24
nC
A
90
2100
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
VGS=4.5V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
7.9
tD(on)
Turn-On DelayTime
5.9
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
mΩ
S
536
0.5
µA
1.6
0.74
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
pF
3.6
nC
nC
10
ns
11
17
ns
36.2
55
ns
12
18
ns
IF=20A, dI/dt=100A/µs
35
42
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
33
50
ns
nC
Body Diode Reverse Recovery Time
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev 8: Sep 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOD404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
3.5V
50
50
VDS=5V
3V
40
30
30
20
25°C
20
VGS=2.5V
10
10
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
5
7.5
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
Normalized On-Resistance
ID=20A
1.6
VGS=4.5V
6.5
VGS=10V
1.4
6
VGS=4.5V
1.2
VGS=10V
5.5
5
4.5
1
0.8
0
10
20
30
40
50
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
20
1.0E+01
16
125°C
1.0E+00
ID=20A
IS (A)
RDS(ON) (mΩ )
3.5
1.8
7
RDS(ON) (mΩ )
125°C
ID(A)
ID (A)
40
12
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
8
25°C
1.0E-04
1.0E-05
4
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AOD404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
5
VDS=15V
ID=20A
3000
Capacitance (pF)
VGS (Volts)
4
3
2
2500
Ciss
2000
1500
Coss
1000
1
Crss
500
0
0
0
5
10
15
20
25
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
RDS(ON)
limited
10µs
1ms
10ms
80
0.1s
10
1s
TJ(Max)=150°C
TA=25°C
1
TJ(Max)=150°C
TA=25°C
100µs
Power (W)
ID (Amps)
30
100
100
60
40
10s
20
DC
0
0.01
0.1
0.1
1
10
100
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.001
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
100
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
80
60
tA =
40
L ⋅ ID
BV − VDD
20
0
0.00001
100
80
60
40
20
0
0.0001
0.001
0.01
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
Current rating ID(A)
80
60
40
20
0
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
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AOD404
G ate C harge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BV
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Isd
L
Vgs
Alpha & Omega Semiconductor, Ltd.
+ Vdd
IF
t rr
dI/dt
I RM
Vdd
VDC
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