140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz • High Collector Base Breakdown Voltage - BVCBO = 100 V (min) • High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 70 Unit Vdc VCBO Collector-Base Voltage 100 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 400 mA 3.5 20 Watts mW/ ºC -65 to +200 ºC Thermal Data P D Tstg Total Device Dissipation @ TA = 25ºC Derate above 25ºC Storage Temperature Range MSC1315.PDF 10-25-99 MRF545 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 70 - - Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) 100 - - Vdc Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) 3.0 - - Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - - 20 µA Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - 1.0 100 µA 15 - - Vdc (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 2.5 - pF CIB Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) - 5.4 - pF CCB Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 2.8 3.2 pF 1000 1400 - MHz fT Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 250 MHz) MSC1315.PDF 10-25-99 MRF545 FUNCTIONAL Symbol G U max MAG 2 |S21| Test Conditions Maximum Unilateral Gain Maximum Available Gain Insertion Gain Value Min. Typ. Max. Unit IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz - 14 - dB IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz - 14.5 - dB IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz 11.5 12.5 - dB Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA f S11 S21 S12 S22 100 |S11| 0.139 ∠φ -105 |S21| 7.43 ∠φ 101 |S12| 0.031 ∠φ 83 |S22| 0.573 ∠φ -19 200 0.162 -168 4.35 80 0.066 82 0.508 -23 300 0.522 130 1.7 75 0.113 85 0.493 -29 400 0.260 129 2.23 63 0.154 85 0.487 -43 500 0.275 133 1.74 54 0.188 71 0.445 -53 600 0.262 123 1.49 46 0.226 74 0.495 -69 700 0.333 118 0.951 45 0.925 75 0.456 -71 800 0.327 122 1.3 35 0.379 66 0.424 -85 900 0.517 97 1.21 30 0.402 61 0.393 -109 1000 0.463 115 1.07 27 0.437 63 0.375 -115 (MHz) MSC1315.PDF 10-25-99 MRF545 MSC1315.PDF 10-25-99