Order this document by MMBT5550LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 140 Vdc Collector – Base Voltage VCBO 160 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current — Continuous 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT5550LT1 = M1F; MMBT5551LT1 = G1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 140 160 — — 160 180 — — 6.0 — — — — — 100 50 100 50 — 50 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CEO MMBT5550 MMBT5551 V(BR)CBO MMBT5550 MMBT5551 Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc V(BR)EBO Vdc ICBO MMBT5550 MMBT5551 MMBT5550 MMBT5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) Vdc IEBO nAdc µAdc nAdc 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max MMBT5550 MMBT5551 60 80 — — (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5550 MMBT5551 60 80 250 250 (IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550 MMBT5551 20 30 — — Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Both Types — 0.15 (IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 MMBT5551 — — 0.25 0.20 Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Both Types — 1.0 (IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 MMBT5551 — — 1.2 1.0 Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) 2 hFE — VCE(sat) Vdc VBE(sat) Vdc Motorola Small–Signal Transistors, FETs and Diodes Device Data 500 300 h FE, DC CURRENT GAIN 200 VCE = 1.0 V VCE = 5.0 V TJ = 125°C 25°C 100 – 55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 5.0 2.0 10 20 50 Figure 2. Collector Saturation Region 101 1.0 TJ = 25°C 100 10–1 0.8 TJ = 125°C 10–2 IC = ICES 75°C 10–3 REVERSE FORWARD 25°C 10–4 10–5 0.4 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT ( µA) VCE = 30 V VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut–Off Region Motorola Small–Signal Transistors, FETs and Diodes Device Data 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 Figure 4. “On” Voltages 3 θV, TEMPERATURE COEFFICIENT (mV/ °C) 2.5 2.0 TJ = – 55°C to +135°C 1.5 1.0 Vin 0 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% – 2.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 RC RB Vout 5.1 k Vin 100 1N914 Figure 6. Switching Time Test Circuit 1000 TJ = 25°C 20 200 t, TIME (ns) 300 10 Cibo 7.0 5.0 tr @ VCC = 120 V tr @ VCC = 30 V 100 Cobo 3.0 IC/IB = 10 TJ = 25°C 500 30 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 2.0 1.0 0.2 3.0 k Values Shown are for IC @ 10 mA Figure 5. Temperature Coefficients 100 70 50 0.25 µF 10 µs INPUT PULSE qVB for VBE(sat) – 1.5 – 2.5 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 10 0.2 0.3 0.5 20 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances 20 30 50 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 200 Figure 8. Turn–On Time 5000 tf @ VCC = 120 V 3000 2000 IC/IB = 10 TJ = 25°C tf @ VCC = 30 V 1000 t, TIME (ns) C, CAPACITANCE (pF) 100 – 0.5 – 1.0 VCC 30 V VBB – 8.8 V 10.2 V qVC for VCE(sat) 0.5 500 300 ts @ VCC = 120 V 200 100 50 0.2 0.3 0.5 20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 200 Figure 9. Turn–Off Time 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 DIM A B C D G H J K L S V G C H D K J CASE 318–08 SOT–23 (TO–236AB) ISSUE AE INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT5550LT1/D