FGH20N6S2D / FGP20N6S2D / FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • 100kHz Operation at 390V, 7A • • • • • • • 200kHZ Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits • Low Conduction Loss • Low Eon • Soft Recovery Diode IGBT (co-pack) formerly Developmental Type TA49332 (Diode formerly Developmental Type TA49469) Symbol Package TO-247 C E C G TO-220AB E C G TO-263AB G G E E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES Parameter Collector to Emitter Breakdown Voltage COLLECTOR (FLANGE) Ratings 600 Units V A IC25 Collector Current Continuous, TC = 25°C 28 IC110 Collector Current Continuous, TC = 110°C 13 A Collector Current Pulsed (Note 1) 40 A ICM VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 35A at 600V A mJ EAS Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V 100 PD Power Dissipation Total TC = 25°C 125 W Power Dissipation Derating TC > 25°C 1.0 W/°C Operating Junction Temperature Range -55 to 150 °C Storage Junction Temperature Range -55 to 150 °C TJ TSTG CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D July 2002 Device Marking 20N6S2D Device FGH20N6S2D Package TO-247 Tape Width N/A Quantity 30 20N6S2D FGP20N6S2D TO-220AB N/A 50 20N6S2D FGB20N6S2D TO-263AB N/A 50 20N6S2D FGB20N6S2DT TO-263AB 24mm 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 ICES Collector to Emitter Leakage Current VCE = 600V IGES Gate to Emitter Leakage Current VGE = ± 20V BVCES TJ = 25°C TJ = 125°C 600 - - V - - 250 µA - - 2.0 mA - - ±250 nA TJ = 25°C - 2.2 2.7 V TJ = 125°C - 1.9 2.2 V - 1.9 2.7 V VGE = 15V - 30 36 nC VGE = 20V - 38 45 nC 3.5 4.3 5.0 V - 6.5 8.0 V On State Characteristics VCE(SAT) VEC Collector to Emitter Saturation Voltage Diode Forward Voltage IC = 7.0A, VGE = 15V IEC = 7.0A Dynamic Characteristics QG(ON) VGE(TH) VGEP Gate Charge IC = 7.0A, VCE = 300V Gate to Emitter Threshold Voltage IC = 250µA, VCE = 600V Gate to Emitter Plateau Voltage IC = 7.0A, VCE = 300V Switching Characteristics SSOA Switching SOA TJ = 150°C, RG = 25Ω, VGE = 15V, L = 0.5mH VCE = 600V 35 - - A td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 25°C, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω L = 0.5mH Test Circuit - Figure 26 - 7.7 - ns - 4.5 - ns - 87 - ns - 50 - ns - 25 - µJ - 85 - µJ - 58 75 µJ - 7 - ns trI td(OFF)I tfI Current Rise Time Current Turn-Off Delay Time Current Fall Time EON1 Turn-On Energy (Note 1) EON2 Turn-On Energy (Note 1) EOFF Turn-Off Energy (Note 2) td(ON)I Current Turn-On Delay Time trI td(OFF)I tfI Current Rise Time Current Turn-Off Delay Time Current Fall Time EON1 Turn-On Energy (Note 1) EON2 Turn-On Energy (Note 1) EOFF Turn-Off Energy (Note 2) trr Diode Reverse Recovery Time IGBT and Diode at TJ = 125°C ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω L = 0.5mH Test Circuit - Figure 26 - 4.5 - ns - 120 145 ns - 85 105 ns - 20 - µJ - 125 140 µJ - 135 180 µJ IEC = 7A, dIEC/dt = 200A/µs - 26 31 ns IEC = 1A, dIEC/dt = 200A/µs - 20 24 ns - - 1.0 °C/W 2.2 °C/W Thermal Characteristics RθJC Thermal Resistance Junction-Case IGBT Diode NOTE: 1. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 26. 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. ©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Package Marking and Ordering Information 30 20 15 10 5 0 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 500µH 35 30 25 20 15 10 5 0 25 50 75 100 125 150 100 0 TC , CASE TEMPERATURE (oC) Figure 1. DC Collector Current vs Case Temperature 400 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) 400 500 600 VGE = 15V VGE = 10V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.27oC/W, SEE NOTES TJ = 125oC, RG = 25Ω, L = 500µH, V CE = 390V 20 VCE = 390V, RG = 25Ω, TJ = 125oC 180 10 tSC 150 8 ISC 6 120 4 90 2 1 700 210 12 TC = 75oC 10 60 9 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) Figure 3. Operating Frequency vs Collector to Emitter Current Figure 4. Short Circuit Withstand Time 14 14 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 300 Figure 2. Minimum Switching Safe Operating Area 700 12 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 25 ICE, COLLECTOR TO EMITTER CURRENT (A) 40 VGE = 15V 10 8 6 TJ = 25oC TJ = 150oC 4 2 TJ = 125oC 0 0.50 12 DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250µs 10 8 6 TJ = 25oC TJ = 150oC 4 2 TJ = 125oC 0 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5 2.75 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage ©2002 Fairchild Semiconductor Corporation 0.50 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Typical Performance Curves 350 400 RG = 25Ω, L = 500µH, VCE = 390V 350 300 EOFF TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS ( µJ) RG = 25Ω, L = 500µH, VCE = 390V 300 TJ = 25oC, TJ = 125oC, VGE = 10V 250 200 150 100 50 250 200 TJ = 125oC, VGE = 10V, VGE = 15V 150 100 50 TJ = 25oC, VGE = 10V, VGE = 15V TJ = 25oC, TJ = 125oC, VGE = 15V 0 0 0 2 4 6 8 10 12 0 14 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 7. Turn-On Energy Loss vs Collector to Emitter Current 4 6 8 10 12 14 Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current 35 13 RG = 25Ω, L = 500µH, VCE = 390V RG = 25Ω, L = 500µH, VCE = 390V 12 30 11 25 trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 2 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 TJ = 25oC, TJ = 125oC, VGE = 10V 9 TJ = 25oC, TJ = 125oC, VGE = 15V 8 20 TJ = 25oC, TJ = 125oC, VGE = 10V 15 10 7 5 6 0 TJ = 25oC, TJ = 125oC, VGE =15V 0 2 4 6 8 10 12 0 14 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 9. Turn-On Delay Time vs Collector to Emitter Current 4 6 8 10 12 14 Figure 10. Turn-On Rise Time vs Collector to Emitter Current 140 120 RG = 25Ω, L = 500µH, VCE = 390V RG = 25Ω, L = 500µH, VCE = 390V VGE = 10V, VGE = 15V, TJ = 125oC 120 100 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 2 ICE , COLLECTOR TO EMITTER CURRENT (A) 100 80 TJ = 125oC, VGE = 10V or 15V 80 60 TJ = 25oC, VGE = 10V or 15V VGE = 10V, VGE = 15V, TJ = 25oC 60 40 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 11. Turn-Off Delay Time vs Collector to Emitter Current ©2002 Fairchild Semiconductor Corporation 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 12. Fall Time vs Collector to Emitter Current FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Typical Performance Curves (Continued) 16 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs IG(REF) = 1mA, RL = 42.6Ω, TJ = 25oC 100 80 TJ = 25oC 60 40 TJ = 125oC 20 VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 120 14 12 VCE = 600V 10 8 6 VCE = 400V 4 VCE = 200V 2 TJ = -55oC 0 0 4 6 8 10 12 14 0 16 5 10 VGE, GATE TO EMITTER VOLTAGE (V) 0.8 RG = 25Ω, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 0.6 ICE = 14A 0.4 ICE = 7A 0.2 ICE = 3A 0 50 75 100 25 30 35 125 10 TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 1 ICE = 14A ICE = 7A ICE = 3A 0.1 0.05 1 150 10 TC , CASE TEMPERATURE (oC) 100 1000 RG, GATE RESISTANCE (Ω) Figure 15. Total Switching Loss vs Case Temperature Figure 16. Total Switching Loss vs Gate Resistance 1.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.6 FREQUENCY = 1MHz 1.0 C, CAPACITANCE (nF) 20 Figure 14. Gate Charge ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) Figure 13. Transfer Characteristic 25 15 QG , GATE CHARGE (nC) 0.8 CIES 0.6 0.4 COES 0.2 CRES 0.0 DUTY CYCLE < 0.5% PULSE DURATION = 250µs, TJ = 25oC 3.4 3.2 ICE = 14A 3.0 ICE = 7A 2.8 2.6 ICE = 3A 2.4 2.2 2.0 0 10 20 30 40 50 60 70 80 90 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 17. Capacitance vs Collector to Emitter Voltage ©2002 Fairchild Semiconductor Corporation 5 6 7 8 9 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Typical Performance Curves (Continued) 250 14 DUTY CYCLE < 0.5%, PULSE DURATION = 250µs trr, REVERSE RECOVERY TIMES (ns) dIEC/dt = 200A/µs, VCE = 390V IEC , FORWARD CURRENT (A) 12 10 8 6 125oC 4 25oC 2 0 200 125oC tb, trr 150 100 25oC tb, trr 50 125oC ta 25o ta 0 0 0.5 1.0 2.0 1.5 2.5 0 3.0 2 VEC , FORWARD VOLTAGE (V) 10 12 14 Figure 20. Recovery Times vs Forward Current 160 500 Qrr , REVERSE RECOVERY CHARGE (nC) IEC = 7A, VCE = 390V ta, tb, REVERSE RECOVERY TIMES (ns) 8 IEC , FORWARD CURRENT (A) Figure 19. Diode Forward Current vs Forward Voltage Drop 140 120 100 125oC tb 80 25oC tb 60 40 125oC ta 20 0 200 25oC ta 300 VCE = 390V 450 400 125oC, IEC = 7A 350 300 125oC, IEC = 3.5A 250 25oC, IEC = 7A 200 25oC, IEC = 3.5A 150 100 400 500 600 700 800 900 200 1000 dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs) VCE = 390V, TJ = 125°C 5.5 IEC = 7A 5.0 4.5 IEC = 3.5A 4.0 3.5 3.0 300 400 500 600 700 800 900 1000 dIEC/dt, CURRENT RATE OF CHANGE (A/µs) Figure 23. Reverse Recovery Softness Factor vs Rate of Change of Current ©2002 Fairchild Semiconductor Corporation 400 500 600 700 800 900 1000 Figure 22. Stored Charge vs Rate of Change of Current IRRM, MAX REVERSE RECOVERY CURRENT (A) 6.0 200 300 dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs) Figure 21. Recovery Times vs Rate of Change of Current S, REVERSE RECOVERY SOFTNESS FACTOR 6 4 10 VCE = 390V, TJ = 125°C 9 8 IEC = 7A 7 6 IEC = 3.5A 5 4 3 200 300 400 500 600 700 800 900 1000 dIEC/dt, CURRENT RATE OF CHANGE (A/µs) Figure 24. Maximum Reverse Recovery Current vs Rate of Change of Current FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Typical Performance Curves (Continued) ZθJC , NORMALIZED THERMAL RESPONSE 100 0.50 0.20 t1 0.10 10-1 PD t2 0.05 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuit and Waveforms FGH20N6S2D DIODE TA49469 90% 10% VGE EON2 EOFF L = 500µH VCE RG = 25Ω 90% + FGH20N6S2D - ICE VDD = 390V 10% td(OFF)I tfI trI td(ON)I Figure 26. Inductive Switching Test Circuit ©2002 Fairchild Semiconductor Corporation Figure 27. Switching Test Waveforms FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Typical Performance Curves (Continued) Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by P C = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turnon and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0) ECCOSORBD is a Trademark of Emerson and Cumming, Inc. ©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Handling Precautions for IGBTs TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FASTâ FASTr FRFET GlobalOptoisolator GTO HiSeC I2C Across the board. Around the world. The Power Franchise ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETâ VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I