AP72T12GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
120V
RDS(ON)
22.5mΩ
ID
G
52A
S
Description
Advanced
Power
MOSFETs
fromfrom
APEC
provide
thethe
designer with the
The Advanced
Power
MOSFETs
APEC
provide
best
combination
of fast
switching,ofruggedized
device design, low ondesigner
with the best
combination
fast switching,
resistance
cost-effectiveness.
ruggedizedand
device
design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power
applications and suited for low voltage applications such as DC/DC
converters.
G
TO-220(P)
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
120
V
VGS
Gate-Source Voltage
+20
V
ID@Tc=25℃
Continuous Drain Current, V GS @ 10V
52
A
ID@Tc=100℃
Continuous Drain Current, V GS @ 10V
33
A
160
A
1
IDM
Pulsed Drain Current
PD@Tc=25℃
Total Power Dissipation
138.8
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.9
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201109141
AP72T12GP-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
120
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=30A
-
-
22.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
38
-
S
IDSS
Drain-Source Leakage Current
VDS=96V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
45
72
nC
Qgs
Gate-Source Charge
VDS=96V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
19
-
nC
td(on)
Turn-on Delay Time
VDS=60V
-
14
-
ns
tr
Rise Time
ID=30A
-
54
-
ns
td(off)
Turn-off Delay Time
RG=0.5Ω
-
24
-
ns
tf
Fall Time
VGS=10V
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
2600 4160
pF
Coss
Output Capacitance
VDS=25V
-
370
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
70
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
250
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP72T12GP-HF
120
160
T C =150 o C
10V
8.0V
o
T C =25 C
10V
8.0V
ID , Drain Current (A)
ID , Drain Current (A)
100
120
7.0V
80
6.0V
7.0V
80
60
6.0V
40
V G =5.0V
40
V G = 5.0V
20
0
0
0
4
8
12
16
20
24
0
4
V DS , Drain-to-Source Voltage (V)
8
12
16
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I D =30A
V G =10V
I D =1mA
Normalized RDS(ON)
Normalized BVDSS (V)
2.0
1.1
1
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
30
1.6
Normalized VGS(th) (V)
I D =250uA
20
IS(A)
T j =150 o C
T j =25 o C
10
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP72T12GP-HF
f=1.0MHz
12
4000
I D =30A
V DS =96V
3000
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
2000
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
ID (A)
Operation in this area
limited by RDS(ON)
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
1
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal
Impedance
80
80
V DS =5V
T j =150 o C
ID , Drain Current (A)
ID , Drain Current (A)
T j =25 o C
60
40
60
40
20
20
0
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
12
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 12. Maximum Continuous Drain
Currentv.s. Case Temperature
4