NXP BZV55-C75 Voltage regulator diode Datasheet

BZV55 series
Voltage regulator diodes
Rev. 5 — 26 January 2011
Product data sheet
1. Product profile
1.1 General description
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized
E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
1.2 Features and benefits
 Non-repetitive peak reverse power
dissipation:  40 W
 Total power dissipation:  500 mW
 Two tolerance series: 2 % and 5 %
 Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
 Low differential resistance
 Small hermetically sealed glass
SMD package
1.3 Applications
 General regulation functions
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
VF
forward voltage
IF = 10 mA
PZSM
[1]
[1]
non-repetitive peak
reverse power dissipation
Min
Typ
Max
Unit
-
-
0.9
V
-
-
40
W
tp = 100 s; square wave; Tj = 25 C prior to surge
2. Pinning information
Table 2.
Pin
Pinning
Description
1
cathode
2
anode
Simplified outline
Graphic symbol
[1]
k
a
1
2
006aaa152
[1]
The marking band indicates the cathode.
BZV55 series
NXP Semiconductors
Voltage regulator diodes
3. Ordering information
Table 3.
Ordering information
Type number
Package
BZV55-B2V4 to
BZV55-C75[1]
[1]
Name
Description
Version
-
hermetically sealed glass surface-mounted
package; 2 connectors
SOD80C
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Type number
Marking code
BZV55-B2V4 to BZV55-C75
marking band
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IF
forward current
Min
Max
Unit
mA
-
250
-
see
Table 8
and 9
IZSM
non-repetitive peak
reverse current
[1]
PZSM
non-repetitive peak
reverse power dissipation
[1]
-
40
W
Ptot
total power dissipation
Tamb  50 C
[2]
-
400
mW
Ttp  50 C
[2]
-
500
mW
Tstg
storage temperature
65
+200
C
Tj
junction temperature
65
+200
C
[1]
tp = 100 s; square wave; Tj = 25 C prior to surge
[2]
Device mounted on a ceramic substrate of 10  10  0.6 mm.
6. Thermal characteristics
Table 6.
Symbol
Product data sheet
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
[1]
BZV55_SER
Thermal characteristics
in free air
[1]
Min
Typ
Max
Unit
-
-
380
K/W
-
-
300
K/W
Device mounted on a ceramic substrate of 10  10  0.6 mm.
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
2 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
006aab072
103
Zth(j-a)
(K/W)
δ=1
0.75
0.50
0.33
102
0.20
0.10
0.05
10
0.02
0.01
≤ 0.001
1
10−1
1
102
10
103
104
105
tp (ms)
Fig 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Tj = 25 C unless otherwise specified.
BZV55_SER
Product data sheet
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 10 mA
-
-
0.9
V
IR
reverse current
BZV55-B/C2V4
VR = 1 V
-
-
50
A
BZV55-B/C2V7
VR = 1 V
-
-
20
A
BZV55-B/C3V0
VR = 1 V
-
-
10
A
BZV55-B/C3V3
VR = 1 V
-
-
5
A
BZV55-B/C3V6
VR = 1 V
-
-
5
A
BZV55-B/C3V9
VR = 1 V
-
-
3
A
BZV55-B/C4V3
VR = 1 V
-
-
3
A
BZV55-B/C4V7
VR = 2 V
-
-
3
A
BZV55-B/C5V1
VR = 2 V
-
-
2
A
BZV55-B/C5V6
VR = 2 V
-
-
1
A
BZV55-B/C6V2
VR = 4 V
-
-
3
A
BZV55-B/C6V8
VR = 4 V
-
-
2
A
BZV55-B/C7V5
VR = 5 V
-
-
1
A
BZV55-B/C8V2
VR = 5 V
-
-
700
nA
BZV55-B/C9V1
VR = 6 V
-
-
500
nA
BZV55-B/C10
VR = 7 V
-
-
200
nA
BZV55-B/C11
VR = 8 V
-
-
100
nA
BZV55-B/C12
VR = 8 V
-
-
100
nA
BZV55-B/C13
VR = 8 V
-
-
100
nA
BZV55-B/C15 to BZV55-B/C75
VR = 0.7VZ(nom)
-
-
50
nA
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
3 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
Table 8.
Characteristics per type; BZV55-B2V4 to BZV55-C24
Tj = 25 C unless otherwise specified.
BZV55xxx
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
Sel
Working
voltage
VZ (V)
Differential resistance
rdif ()
Temperature
coefficient
SZ (mV/K)
IZ = 5 mA
IZ = 1 mA
IZ = 5 mA
IZ = 5 mA
Min
Max
Typ
Max
Typ
Max
Min
Typ
B
2.35
2.45
275
600
70
100
3.5
C
2.2
2.6
B
2.65
2.75
300
600
75
100
C
2.5
2.9
B
2.94
3.06
325
600
80
C
2.8
3.2
B
3.23
3.37
350
600
C
3.1
3.5
B
3.53
3.67
375
C
3.4
3.8
B
3.82
3.98
C
3.7
4.1
B
4.21
4.39
C
4.0
4.6
B
4.61
4.79
C
4.4
5.0
B
5.0
5.2
C
4.8
5.4
B
5.49
5.71
C
5.2
6.0
B
6.08
6.32
C
5.8
6.6
B
6.66
6.94
C
6.4
7.2
B
7.35
7.65
C
7.0
7.9
B
8.04
8.36
C
7.7
8.7
B
8.92
9.28
C
8.5
9.6
B
9.8
10.2
C
9.4
10.6
B
10.8
11.2
C
10.4
11.6
B
11.8
12.2
C
11.4
12.7
BZV55_SER
Product data sheet
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max
Max
Max
1.6
0
450
6.0
3.5
2.0
0
450
6.0
95
3.5
2.1
0
450
6.0
85
95
3.5
2.4
0
450
6.0
600
85
90
3.5
2.4
0
450
6.0
400
600
85
90
3.5
2.5
0
450
6.0
410
600
80
90
3.5
2.5
0
450
6.0
425
500
50
80
3.5
1.4
0.2
300
6.0
400
480
40
60
2.7
0.8
1.2
300
6.0
80
400
15
40
2.0
1.2
2.5
300
6.0
40
150
6
10
0.4
2.3
3.7
200
6.0
30
80
6
15
1.2
3.0
4.5
200
6.0
30
80
6
15
2.5
4.0
5.3
150
4.0
40
80
6
15
3.2
4.6
6.2
150
4.0
40
100
6
15
3.8
5.5
7.0
150
3.0
50
150
8
20
4.5
6.4
8.0
90
3.0
50
150
10
20
5.4
7.4
9.0
85
2.5
50
150
10
25
6.0
8.4
10.0
85
2.5
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
Table 8.
Characteristics per type; BZV55-B2V4 to BZV55-C24 …continued
Tj = 25 C unless otherwise specified.
BZV55xxx
13
15
16
18
20
22
24
Sel
Working
voltage
VZ (V)
Differential resistance
rdif ()
Temperature
coefficient
SZ (mV/K)
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
IZSM (A)[2]
IZ = 5 mA
IZ = 1 mA
IZ = 5 mA
IZ = 5 mA
Min
Max
Typ
Max
Typ
Max
Min
Typ
Max
Max
Max
B
12.7
13.3
50
170
10
30
7.0
9.4
11.0
80
2.5
C
12.4
14.1
B
14.7
15.3
50
200
10
30
C
13.8
15.6
9.2
11.4
13.0
75
2.0
B
15.7
16.3
50
200
10
40
10.4
12.4
14.0
75
1.5
C
15.3
17.1
B
17.6
18.4
50
225
C
16.8
19.1
10
45
12.4
14.4
16.0
70
1.5
B
19.6
20.4
60
225
15
55
12.3
15.6
18.0
60
1.5
C
18.8
21.2
B
21.6
22.4
C
20.8
23.3
60
250
20
55
14.1
17.6
20.0
60
1.25
B
23.5
24.5
60
250
25
70
15.9
19.6
22.0
55
1.25
C
22.8
25.6
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 s; square wave; Tj = 25 C prior to surge
BZV55_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
5 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
Table 9.
Characteristics per type; BZV55-B27 to BZV55-C75
Tj = 25 C unless otherwise specified.
BZV55xxx
27
30
33
36
39
43
47
51
56
62
68
75
Sel
Working
voltage
VZ (V)
Differential resistance
rdif ()
Temperature
coefficient
SZ (mV/K)
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
IZSM (A)[2]
IZ = 2 mA
IZ = 0.5 mA
IZ = 2 mA
IZ = 2 mA
Min
Max
Typ
Max
Typ
Max
Min
Typ
Max
Max
Max
B
26.5
27.5
65
300
25
80
18.0
C
25.1
28.9
22.7
25.3
50
1.0
B
29.4
30.6
70
300
30
80
20.6
25.7
29.4
50
1.0
C
28.0
32.0
B
32.3
33.7
75
325
35
C
31.0
35.0
80
23.3
28.7
33.4
45
0.9
B
35.3
36.7
80
350
35
90
26.0
31.8
37.4
45
0.8
C
34.0
38.0
B
38.2
39.8
80
C
37.0
41.0
350
40
130
28.7
34.8
41.2
45
0.7
B
42.1
43.9
85
375
45
150
31.4
38.8
46.6
40
0.6
C
40.0
46.0
B
46.1
47.9
C
44.0
50.0
85
375
50
170
35.0
42.9
51.8
40
0.5
B
50.0
52.0
90
400
60
180
38.6
46.9
57.2
40
0.4
C
48.0
54.0
B
54.9
57.1
C
52.0
60.0
100
425
70
200
42.2
52.0
63.8
40
0.3
B
60.8
63.2
120
450
80
215
58.8
64.4
71.6
35
0.3
C
58.0
66.0
B
66.6
69.4
C
64.0
72.0
150
475
90
240
65.6
71.7
79.8
35
0.25
B
73.5
76.5
170
500
95
255
73.4
80.2
88.6
35
0.2
C
70.0
79.0
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 s; square wave; Tj = 25 C prior to surge
BZV55_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
6 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
mbg801
103
PZSM
(W)
mbg781
300
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
0
0.6
10
tp (ms)
0.8
1
VF (V)
(1) Tj = 25 C (prior to surge)
Tj = 25 C
(2) Tj = 150 C (prior to surge)
Fig 2.
Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 3.
mbg783
0
Forward current as a function of forward
voltage; typical values
mbg782
10
12
SZ
(mV/K)
SZ
(mV/K)
4V3
11
10
−1
9V1
5
3V9
8V2
7V5
6V8
3V6
−2
6V2
5V6
5V1
0
3V3
4V7
3V0
2V4
2V7
−3
Fig 4.
0
20
40
IZ (mA)
−5
60
0
4
8
12
BZV55-B/C2V4 to BZV55-B/C4V3
BZV55-B/C4V7 to BZV55-B/C12
Tj = 25 C to 150 C
Tj = 25 C to 150 C
Temperature coefficient as a function of
working current; typical values
BZV55_SER
Product data sheet
Fig 5.
16
IZ (mA)
20
Temperature coefficient as a function of
working current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
7 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
8. Package outline
0.3
0.3
1.60
1.45
3.7
3.3
Dimensions in mm
Fig 6.
06-03-16
Package outline SOD80C
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BZV55-B2V4 to
BZV55-C75
[1]
BZV55_SER
Product data sheet
Package
SOD80C
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
2500
10000
-115
-135
For further information and the availability of packing methods, see Section 13.
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
8 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
10. Soldering
4.55
4.30
2.30
solder lands
solder paste
2.25 1.70 1.60
solder resist
occupied area
Dimensions in mm
0.90
(2x)
Fig 7.
sod080c
Reflow soldering footprint SOD80C
6.30
4.90
2.70
1.90
solder lands
solder resist
occupied area
2.90 1.70
tracks
Dimensions in mm
sod080c
Fig 8.
BZV55_SER
Product data sheet
Wave soldering footprint SOD80C
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
9 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BZV55_SER v.5
20110126
Product data sheet
-
BZV55_SER v.4
Modifications:
•
•
•
•
Section 4 “Marking”: updated
Table 6 “Thermal characteristics”: changed Rth(j-t) for Rth(j-sp)
Figure 6: superseded by minimized outline drawing
Section 12 “Legal information”: updated
BZV55_SER v.4
20070719
Product data sheet
CPCN200508022F
BZV55 v.3
BZV55 v.3
20020228
Product specification
-
BZV55 v.2
BZV55 v.2
19990521
Product specification
-
BZV55 v.1
BZV55 v.1
19960426
Product specification
-
-
BZV55_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
10 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
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therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BZV55_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
11 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BZV55_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
12 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 26 January 2011
Document identifier: BZV55_SER