PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF(AV) = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count VR = 1200V VF(typ.)* = 2.3V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free CATHODE 3 ANODE 2 IRRM(typ.) = 5.8A trr(typ.) = 30ns di(rec)M/dt (typ.)* = 76A/µs Description International Rectifier's HFA16TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-220AC Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max Units 1200 16 190 64 151 60 V -55 to +150 A W °C * 125°C www.irf.com 10/19/04 1 HFA16TB120PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR Cathode Anode Breakdown Voltage VFM Max Forward Voltage IRM Max Reverse Leakage Current CT Junction Capacitance LS Series Inductance Min Typ Max Units 1200 V 2.5 3.0 3.2 3.93 2.3 2.7 0.75 20 375 2000 27 40 V µA pF 8.0 nH Test Conditions IR = 100µA IF = 16A See Fig. 1 IF = 32A IF = 16A, TJ = 125°C VR = VR Rated See Fig. 2 TJ = 125°C, VR = 0.8 x VR RatedD Raed VR = 200V See Fig. 3 Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time See Fig. 5, 10 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8 Min Typ Max Units 30 90 164 5.8 8.3 260 680 120 76 135 245 10 15 675 1838 ns A nC A/µs Test Conditions I F = 1.0A, dif/dt = 200A/µs, V R = 30V TJ = 25°C TJ = 125°C I F = 16A TJ = 25°C TJ = 125°C V R = 200V TJ = 25°C TJ = 125°C dif/dt = 200A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameter Tlead RthJC RthJA RthCS Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Wt Weight Mounting Torque Min Typ Max Units 300 0.83 80 °C K/W 12 10 g (oz) Kg-cm lbfin 0.50 2.0 0.07 6.0 5.0 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA16TB120PbF Reverse Current - IR (µA) 1000 100 T = 125˚C J 10 1 TJ = 25˚C 0.1 10 A 0.01 0 200 400 600 800 1000 1200 Reverse Current - VR (V) T = 125˚C J Fig. 2 - Typical Reverse Current vs. Reverse Voltage T = 25˚C J 1000 T = 150˚C J Junction Capacitance -CT (pF) Instantaneous Forward Current - IF (A) 100 TJ = 150˚C 1 0.1 0 2 4 6 8 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 T J = 25˚C 10 A 1 1 10 100 1000 10000 Reverse Current - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response (Z thJC ) 1 0.1 D D D D D D = = = = = = 0.50 0.20 0.10 0.05 0.02 0.01 PDM Single Pulse (Thermal Resistance) t1 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak TJ = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) www.irf.com Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics 3 HFA16TB120PbF 270 30 220 25 20 170 Irr ( A) trr (nC) If = 16 A If = 8 A V R = 200V T J = 125˚C T J = 25˚C If = 16 A If = 8 A 15 120 10 70 5 VR = 200V TJ = 125˚C TJ = 25˚C 20 100 0 100 1000 di f / dt (A/µs) Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg) Fig. 5 - Typical Reverse Recovery vs. di f/dt, (per Leg) 1600 1400 1000 di f / dt (A/µs) 10000 V R = 200V T J = 125˚C T J = 25˚C V R = 200V T J = 125˚C T J = 25˚C Qrr (nC) 1000 di (rec) M/dt (A /µs) 1200 If = 16A If = 8A 800 600 1000 If = 16A If = 8A 100 400 200 0 100 di f / dt (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt, (per Leg) 4 10 100 di f / dt (A/µs) 1000 Fig. 8 - Typical di(rec)M/dt vs. dif/dt, (per Leg) www.irf.com HFA16TB120PbF 3 t rr IF REVERSE RECOVERY CIRCUIT tb ta 0 Q rr VR = 200V 2 I RRM 4 0.5 I RRM di(rec)M/dt 0.01 Ω 0.75 I RRM L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit www.irf.com 5 1 di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and I RRM trr X IRRM Q rr = 2 5. di(rec)M/dt - Peak rate of change of current during t b portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions 5 HFA16TB120PbF TO-220AC Package Outline Dimensions are shown in millimeters (inches) TO-220AC Part Marking Information PART NUMBE R EXAMPLE : T HIS IS A HFA06T B120 LOT CODE 1789 AS SEMBLED ON WW 19, 2001 IN T HE ASSE MBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO DAT E CODE ASS EMBLY LOT CODE P = LEAD-FREE YEAR 1 = 2001 WE EK 19 LINE C PART NUMBER E XAMPLE: T HIS IS A HFA06TB120 LOT CODE 1789 AS SE MBLED ON WW 19, 2001 IN T HE ASS EMBLY LINE "C" INT E RNATIONAL RECT IFIER LOGO DAT E CODE ASS EMBLY LOT CODE YE AR 1 = 2001 WE EK 19 P = LE AD-F REE Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/04 6 www.irf.com