Diodes FZT788B 15v pnp medium power high gain transistor Datasheet

FZT788B
Green
15V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223
Features
Mechanical Data

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
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BVCEO > -15V
BVCBO > -15V
IC = -3A High Continuous Current
hFE > 300 @ -2A and Low Saturation Voltage
Extremely Low Equivalent On-Resistance RCE(sat) 93mΩ at -3A



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Complementary NPN Type: FZT688B
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)



Applications


Flash Gun Convertors
Battery Powered Circuits
C
SOT223
E
B
C
C
B
E
Top View
Top View
Pin-Out
Device Symbol
Ordering Information (Note 4)
Product
FZT788BTA
FZT788BTC
Notes:
Compliance
AEC-Q101
AEC-Q101
Marking
FZT788B
FZT788B
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
2,500
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
FZT
788B
FZT788B
Document number: DS33167 Rev. 4 - 2
YWW
SOT223
FZT 788B = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
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FZT788B
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-15
-15
-7
-3
-8
Unit
V
V
V
A
A
Value
3
2
1.6
1.2
41.7
62.5
78.1
104
Unit
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
PD
RJA
RJL
12.9
TJ, TSTG
-55 to +150
W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT788B
Document number: DS33167 Rev. 4 - 2
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Thermal Characteristics and Derating Information
50
T amb=25°C
60
25mm x 25mm
2oz FR4
50
40
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
70
T amb=25°C
40
30
D=0.5
20
0
100µ
10
25mm x 25mm
2oz FR4
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Max Power Dissipation (W)
Single Pulse
T amb=25°C
1m
Document number: DS33167 Rev. 4 - 2
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
3.0
50mm x 50mm
2oz FR4
2.5
2.0
25mm x 25mm
2oz FR4
1.5
1.0
0.5
0.0
0
Pulse Power Dissipation
FZT788B
D=0.05
Transient Thermal Impedance
50mm x 50mm
2oz FR4
1
100µ
Single Pulse
D=0.2
10
Transient Thermal Impedance
100
50mm x 50mm
2oz FR4
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Characteristic
BVCBO
-15
—
—
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
-15
—
—
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
—
—
V
IE = -100µA
ICBO
—
—
-100
nA
VCB = -10V
IEBO
—
—
-100
nA
VEB = -4V
hFE
500
400
300
150
—
—
—
—
—
—
—
—
—
IC = -10mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
IC = -6A, VCE = -2V
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
—
—
—
—
—
—
—
—
-0.15
-0.25
-0.45
-0.5
V
IC = -0.5A, IB = -2.5mA
IC = -1A, IB = -5mA
IC = -2A, IB = -10mA
IC =- 3A, IB = -50mA
Base-Emitter Saturation Voltage (Note 11)
VBE(sat)
—
—
-0.9
V
IC = -1A, IB = -5mA
Base-Emitter Turn-On Voltage (Note 11)
Collector-Base Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (Note 11)
Test Condition
VBE(on)
—
-0.75
—
V
IC = -1A, VCE = -2V
Input Capacitance
Cibo
—
225
—
pF
VEB = -0.5V, f = 1MHz
Output Capacitance
Cobo
—
25
—
pF
VCB = -10V, f = 1MHz
Current Gain-Bandwidth Product
fT
100
—
—
MHz
VCE = -5V, IC = -50mA,
f=50MHz
Turn-On Time
ton
—
35
—
ns
Turn-Off Time
toff
—
400
—
ns
Note:
VCC = -10V, IC = -500mA
IB1 = -IB2 = -50mA
11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
FZT788B
Document number: DS33167 Rev. 4 - 2
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FZT788B
Typical Electrical Characteristics
FZT788B
Document number: DS33167 Rev. 4 - 2
(@TA = +25°C, unless otherwise specified.)
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
Q
b1
C
E
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
E1
Gauge
Plane
0.25
Seating
Plane
e1
L
b
0°
-1
0°
e
A
A1
7°
7°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
C1
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
C2
8.00
Y2
Y
X
FZT788B
Document number: DS33167 Rev. 4 - 2
C
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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FZT788B
Document number: DS33167 Rev. 4 - 2
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