FZT788B Green 15V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -15V BVCBO > -15V IC = -3A High Continuous Current hFE > 300 @ -2A and Low Saturation Voltage Extremely Low Equivalent On-Resistance RCE(sat) 93mΩ at -3A Complementary NPN Type: FZT688B Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) Applications Flash Gun Convertors Battery Powered Circuits C SOT223 E B C C B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product FZT788BTA FZT788BTC Notes: Compliance AEC-Q101 AEC-Q101 Marking FZT788B FZT788B Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 2,500 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information FZT 788B FZT788B Document number: DS33167 Rev. 4 - 2 YWW SOT223 FZT 788B = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com November 2015 © Diodes Incorporated FZT788B Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value -15 -15 -7 -3 -8 Unit V V V A A Value 3 2 1.6 1.2 41.7 62.5 78.1 104 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance Junction to Lead Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 7) (Note 8) (Note 5) (Note 6) (Note 7) (Note 8) (Note 9) PD RJA RJL 12.9 TJ, TSTG -55 to +150 W °C/W °C ESD Ratings (Note 10) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 8. Same as Note 6, except the device is mounted on minimum recommended pad layout. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT788B Document number: DS33167 Rev. 4 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated FZT788B Thermal Characteristics and Derating Information 50 T amb=25°C 60 25mm x 25mm 2oz FR4 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 70 T amb=25°C 40 30 D=0.5 20 0 100µ 10 25mm x 25mm 2oz FR4 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Max Power Dissipation (W) Single Pulse T amb=25°C 1m Document number: DS33167 Rev. 4 - 2 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) 3.0 50mm x 50mm 2oz FR4 2.5 2.0 25mm x 25mm 2oz FR4 1.5 1.0 0.5 0.0 0 Pulse Power Dissipation FZT788B D=0.05 Transient Thermal Impedance 50mm x 50mm 2oz FR4 1 100µ Single Pulse D=0.2 10 Transient Thermal Impedance 100 50mm x 50mm 2oz FR4 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 7 www.diodes.com November 2015 © Diodes Incorporated FZT788B Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO -15 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 11) BVCEO -15 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 — — V IE = -100µA ICBO — — -100 nA VCB = -10V IEBO — — -100 nA VEB = -4V hFE 500 400 300 150 — — — — — — — — — IC = -10mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V Collector-Emitter Saturation Voltage (Note 11) VCE(sat) — — — — — — — — -0.15 -0.25 -0.45 -0.5 V IC = -0.5A, IB = -2.5mA IC = -1A, IB = -5mA IC = -2A, IB = -10mA IC =- 3A, IB = -50mA Base-Emitter Saturation Voltage (Note 11) VBE(sat) — — -0.9 V IC = -1A, IB = -5mA Base-Emitter Turn-On Voltage (Note 11) Collector-Base Cut-Off Current Emitter Cut-Off Current DC Current Gain (Note 11) Test Condition VBE(on) — -0.75 — V IC = -1A, VCE = -2V Input Capacitance Cibo — 225 — pF VEB = -0.5V, f = 1MHz Output Capacitance Cobo — 25 — pF VCB = -10V, f = 1MHz Current Gain-Bandwidth Product fT 100 — — MHz VCE = -5V, IC = -50mA, f=50MHz Turn-On Time ton — 35 — ns Turn-Off Time toff — 400 — ns Note: VCC = -10V, IC = -500mA IB1 = -IB2 = -50mA 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%. FZT788B Document number: DS33167 Rev. 4 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated FZT788B Typical Electrical Characteristics FZT788B Document number: DS33167 Rev. 4 - 2 (@TA = +25°C, unless otherwise specified.) 5 of 7 www.diodes.com November 2015 © Diodes Incorporated FZT788B Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm E1 Gauge Plane 0.25 Seating Plane e1 L b 0° -1 0° e A A1 7° 7° Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 C2 8.00 Y2 Y X FZT788B Document number: DS33167 Rev. 4 - 2 C 6 of 7 www.diodes.com November 2015 © Diodes Incorporated FZT788B IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com FZT788B Document number: DS33167 Rev. 4 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated