AP9561GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
-40V
RDS(ON)
16mΩ
ID
G
-45A
S
Description
AP9561 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP9561GJ) are available for low-profile
applications.
G
G
D
S
TO-252(H)
D
S
TO-251(J)
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
-45
A
ID@TC=100℃
Drain Current, VGS @ 10V
-29
A
-180
A
54.3
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance Junction-case
2.3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount) 3
62.5
℃/W
Rthj-a
Maximum Thermal Resistance Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
201410075
AP9561GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-40
-
-
V
VGS=-10V, ID=-30A
-
-
16
mΩ
VGS=-4.5V, ID=-20A
-
-
28
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-20A
-
33
-
S
IDSS
Drain-Source Leakage Current
VDS=-32V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=125 C) VDS=-32V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-20A
-
25
40
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-32V
-
4.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
18
-
nC
2
td(on)
Turn-on Delay Time
VDS=-20V
-
9
-
ns
tr
Rise Time
ID=-20A
-
46
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
46
-
ns
tf
Fall Time
VGS=-10V
-
95
-
ns
Ciss
Input Capacitance
VGS=0V
-
1700 2720
pF
Coss
Output Capacitance
VDS=-25V
-
360
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
290
-
pF
Min.
Typ.
IS=-20A, VGS=0V
-
-
-1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-20A, VGS=0V,
-
31
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
26
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9561GH/J-HF
160
100
-10V
-7.0 V
-6.0 V
TC=150oC
-10V
-7.0V
-6.0V
-5.0V
80
-ID , Drain Current (A)
-ID , Drain Current (A)
T C = 25 o C
120
-5.0 V
80
V G = - 4.0 V
60
V G = - 4.0 V
40
40
20
0
0
0
2
4
6
8
10
0
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
1.8
I D = -20 A
T C =25 ℃
I D =-30A
V G =-10V
1.6
22
.
18
Normalized RDS(ON)
RDS(ON) (mΩ )
26
1.4
1.2
1.0
14
0.8
0.6
10
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
2.2
2
T j =150 o C
-VGS(th) (V)
-IS(A)
20
T j =25 o C
1.8
1.6
1.4
10
1.2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9561GH/J-HF
f=1.0MHz
2400
10
2000
V DS =-32V
I D =-20A
C iss
1600
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
1200
4
800
2
400
C oss
C rss
0
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
Operation in this area
limited by RDS(ON)
-ID (A)
100us
.
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP9561GH/J-HF
MARKING INFORMATION
TO-251
9561GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
9561GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5