ESH1B-M3, ESH1C-M3, ESH1D-M3 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for ultrafast switching speeds AC/AC and DC/DC converters in high temperature conditions for both consumer applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 150 V, 200 V trr 25 ns VF 0.90 V MECHANICAL DATA TJ max. 175 °C Package DO-214AC (SMA) Diode variations Single die Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code ESH1B ESH1C ESH1D EHB EHC EHD UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V 100 150 200 Maximum DC blocking voltage VDC Maximum average forward rectified current at TL = 150 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 50 A TJ, TSTG -55 to +175 °C Operating junction and storage temperature range V Revision: 19-Feb-15 Document Number: 89401 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH1B-M3, ESH1C-M3, ESH1D-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL VALUE VF (1) 0.87 VF 0.90 IF = 0.7 A IF = 1 A TA = 25 °C Maximum DC reverse current at rated DC blocking voltage IR TA = 125 °C Maximum reverse current VR = 20 V, TJ = 150 °C Maximum reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A Typical reverse recovery time IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 25 °C Typical stored charge IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 25 °C Typical junction capacitance 4.0 V, 1 MHz μA 50 μA trr 25 ns Qrr TJ = 100 °C 25 V IR trr TJ = 100 °C 1.0 UNIT CJ 25 35 10 15 25 ns nC pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance ESH1B ESH1C RJA (1) 85 RJL (1) 30 ESH1D UNIT °C/W Note (1) Units mounted on PCB with 5.0 mm x 5.0 mm (0.013 mm thick) land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ESH1D-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel ESH1D-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel Revision: 19-Feb-15 Document Number: 89401 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH1B-M3, ESH1C-M3, ESH1D-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 1.2 1.0 0.8 0.6 TL Measured at the Cathode Band Terminal 0.4 0.2 105 115 125 135 145 155 165 175 TJ = 175 °C 1 TJ = 25 °C 0.1 0.4 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Characteristics 100 Junction Capacitance (pF) 40 30 20 10 0 10 1 100 10 1 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 100 Transient Thermal Impedance (°C/W) TJ = 175 °C Instantaneous Reverse Leakage Current (µA) 1.4 Lead Temperature (°C) 50 Peak Forward Surge Current (A) TJ = 150 °C 0.01 0.2 0 95 TJ = 125 °C 10 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.001 20 40 60 80 100 10 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 3 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 19-Feb-15 Document Number: 89401 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH1B-M3, ESH1C-M3, ESH1D-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 19-Feb-15 Document Number: 89401 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000