Infineon BSZ900N15NS3G Optimostm3 power-transistor Datasheet

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BSZ900N15NS3 G
TM
"%&$!"# 3 Power-Transistor
Product Summary
Package
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Marking
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Maximum ratings, 1CT V S D><5BB? C85AF9B5 [email protected] 9
6954
Parameter
Symbol Conditions
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)+
T 8
0
S
Unit
6
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+ 5E Value
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BSZ900N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
+&+
%
%
.(
)-(
%
%
*
+
,
%
(&()
)
%
)(
)((
%
)
)((
Z6
%
/,
1(
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%
/-
1)
%
)&/
%
"
.
)*
%
H
Thermal characteristics
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Electrical characteristics, 1CT V S D><5BB? C85AF9B5 [email protected] 96954
Static characteristics
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. I 9
=
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T V S
.
V 9H . V =H
T V S
.
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I =HH
V =H . V 9H
A19> B? DA3 5 ? > BC1C5 A5B9BC1>3 5
R 9H"[Z#
V =H
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U
.
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R=
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Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
+0(
-)(
%
,.
.)
Dynamic characteristics
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%
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%
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%
,
%
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%
0
%
tR
%
+
%
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Q S^
%
)&1
%
!1C5 C? 4A19> 3 81A75
Q SP
%
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%
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%
1<<C9
=5
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.
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.
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%
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%
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%
%
)+
6
%
%
-*
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%
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)*+
V 99 . V =H
.
J
Reverse Diode
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9? 45 @D<B5 3 DAA5>C
I H$\`X^Q
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V =H . I < T V S
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@175 BSZ900N15NS3 G
1 Power dissipation
2 Drain current
P _[_4R"T 8#
I 94R"T 8 V =H"
40
.
15
35
30
10
I D [A]
P tot [W]
25
20
15
5
10
5
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 S D 4(
Z [email protected]"t \#
@1A1=5C5A t \
@1A1=5C5A D 4t \'T
102
101
UB
UB
101
(&-
Z thJC [K/W]
UB
I D [A]
=B
100
(&)
98
100
(&*
(&((&(*
(&()
B9>7<5 @D<B5
10-1
10-1
10-1
100
101
102
103
V DS [V]
+ 5E t p [s]
@175 BSZ900N15NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V S
R 9H"[Z#4R"I 9 T V S
@1A1=5C5A V =H
@1A1=5C5A V =H
30
150
140
.
130
25
.
.
120
.
110
.
100
90
R DS(on) [m ]
I D [A]
20
15
.
.
80
.
70
60
10
50
40
.
30
5
20
.
10
.
0
0
0
1
2
3
0
4
8
V DS [V]
12
16
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H JV 9Hf5*fI 9fR 9H"[Z#YMc
g R^4R"I 9 T V S
@1A1=5C5A T V
28
20
24
15
20
I D [A]
g fs [S]
16
12
10
8
5
4
S
S
0
0
0
2
4
6
8
+ 5E 0
10
20
30
I D [A]
V GS [V]
@175 BSZ900N15NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9
V =H"_T#4R"T V V =H4V 9H
V =H
.
@1A1=5C5A I 9
200
4
180
3.5
160
U
3
U
2.5
120
V GS(th) [V]
R DS(on) [m ]
140
100
_d\
80
2
1.5
60
1
40
0.5
20
0
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
11 Typ. capacitances
C 4R"V 9H V =H
. f 60
100
140
180
T j [°C]
12 Forward characteristics of reverse diode
& " I
I <4R"V H9#
@1A1=5C5A T V
103
100
8U^^
102
S
I F [A]
C [pF]
8[^^
S S
10
101
S 8]^^
100
1
0
20
40
60
80
100
V DS [V]
+ 5E 0
0.5
1
1.5
2
V SD [V]
@175 BSZ900N15NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6H4R"t 6J R =H "
V =H4R"Q SM_Q I 9 @D<B54
@1A1=5C5A T V"^_M]_#
@1A1=5C5A V 99
100
10
.
8
.
.
V GS [V]
I AS [A]
6
10
4
S
S
2
S
1
0
1
10
100
1000
0
2
15 Drain-source breakdown voltage
V 7G"9HH#4R"T V I 9
4
6
Q gate [nC]
t AV [µs]
16 Gate charge waveforms
=
170
V =H
Qg
165
V BR(DSS) [V]
160
155
150
V S ^"_T#
145
Q S "_T#
140
Q ^b
Q S^
135
-60
-20
20
60
100
140
Q g ate
Q SP
180
T j [°C]
+ 5E @175 BSZ900N15NS3 G
Package Outline: PG-TDSON-8
+ 5E @175 BSZ900N15NS3 G
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