P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ General Description Features The MDS3753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Low RDS(ON) and low gate charge operation offer superior benefit in the application. VDS = -40V ID = -7.1A @ VGS = 10V RDS(ON) <30m @ VGS = -10V <37m @ VGS = -4.5V Applications Inverters General purpose applications D 7(D) 6(D) 5(D) 8(D) G 4(G) 3(S) 2(S) 1(S) S Absolute Maximum Ratings (TA =25oC unless otherwise noted) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V ID -7.1 A Pulsed Drain Current Continuous Drain Current (Note 1) IDM -50 A Power Dissipation PD 2.5 W EAS 98 mJ TJ, Tstg -55~150 Symbol Rating RθJA 50 RθJC 25 Single Pulse Avalanche Energy (Note 2) Junction and Storage Temperature Range o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Case Nov 2011 Version 1.1 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS3753E– P-Channel Trench MOSFET MDS3753E Part Number Temp. Range MDS3753EURH o -55~150 C Package Packing RoHS Status SO-8 Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = -250μA, VGS = 0V -40 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA -1.0 -1.8 -3.0 V Drain Cut-Off Current IDSS VDS = -40V, VGS = 0V - - -10 Gate Leakage Current IGSS VGS = ±16V, VDS = 0V - - ±10 VGS = -10V, ID = -3.3A - 20 30 VGS = -4.5V, ID = -3.3A - 27 37 14 - - 32.7 - - 4.1 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS VDS = -10V, ID = -3.3A μA mΩ S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs VDD = -32V, ID = -4.7A,VGS = -10V nC Gate-Drain Charge Qgd - 7.4 - Input Capacitance Ciss - 1423 - Reverse Transfer Capacitance Crss - 129 - Output Capacitance Coss - 221 - Turn-On Delay Time td(on) - 14.7 - Turn-On Rise Time tr - 7.1 - Turn-Off Delay Time td(off) - 44.2 - - 9.0 - - 0.81 1.2 V - 34 - ns - 36.5 - nC Turn-Off Fall Time VDS = -15V, VGS = 0V, f = 1.0MHz VGS = -10V ,VDD = -20V, ID = -3.3A RGEN = 4.7Ω tf pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VSD trr Qrr IS = -4.7A, VGS = 0V IS = -4.7A, di/dt=100A/us Note : 1. Surface mounted FR4 board with 2oz. Copper. 2. Starting TJ=25°C, L=1mH, IAS=-14A VDD=-20V, VGS=-10V Nov 2011 Version 1.1 2 MagnaChip Semiconductor Ltd. MDS3753E– P-Channel Trench MOSFET Ordering Information 60 VGS = -10V -ID, Drain Current [A] -5.0V 15 Drain-Source On-Resistance [m Ω] -4.0V -3.5V -4.5V -6.0V 10 -3.0V 5 50 40 VGS = -4.5V 30 20 VGS = -10V 10 0 0.0 0.5 1.0 1.5 2.0 5 10 -VDS, Drain-Source Voltage [V] 15 20 -ID, Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 100 ※ Notes : 1. VGS = -10 V 2. ID = -3.3 A RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 1.6 1.4 1.2 1.0 0.8 80 60 TA = 125 ℃ 40 20 TA = 25 ℃ 0.6 -50 -25 0 25 50 75 100 125 0 150 2 4 6 8 10 o TJ, Junction Temperature [ C] -VGS, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Area Fig.4 On-Resistance Variation with Gate to Source Voltage 20 ※ Notes : ※ Notes : -IDR, Reverse Drain Current [A] 16 -ID, Drain Current [A] VGS = 0V 1 10 VDS = -10V 12 TA=25 ℃ 8 4 0 0 10 TA=125 ℃ 25 ℃ -1 0 1 2 3 4 10 5 Fig.5 Transfer Characteristics Nov 2011 Version 1.1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, Source-Drain voltage [V] -VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS3753E– P-Channel Trench MOSFET 20 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1.6n 8 Ciss VDS = -32V Capacitance [F] -VGS, Gate-Source Voltage [V] ※ Note : ID = -4.7A 6 4 1.2n 800.0p ※ Notes ; 2 400.0p 0 0.0 1. VGS = 0 V 2. f = 1 MHz Coss Crss 0 2 4 6 8 10 0 12 10 QG, Total Gate Charge [nC] 3 10 2 10 1 10 Operation in This Area is Limited by R DS(on) 8 100 s 1 ms 10 ms 100 ms 10 1s 10 s 0 100 s 10 30 Fig.8 Capacitance Characteristics -ID, Drain Current [A] -ID, Drain Current [A] Fig.7 Gate Charge Characteristics 10 20 -VDS, Drain-Source Voltage [V] DC 6 4 -1 2 Single Pulse RthJA=125 /W TA=25 ℃ ℃ 10 -2 10 -1 10 0 10 1 10 0 25 2 -VDS, Drain-Source Voltage [V] 50 75 100 125 150 TA, Case Temperature [ ] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 0 10 Zθ JA(t), Thermal Response D=0.5 0.2 0.1 -1 10 0.05 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA RΘ JA=125 /W 0.02 ℃ 0.01 -2 10 single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Nov 2011 Version 1.1 4 MagnaChip Semiconductor Ltd. MDS3753E– P-Channel Trench MOSFET 2.0n 10 8 Leads, SOIC Dimensions are in millimeters unless otherwise specified Nov 2011 Version 1.1 5 MagnaChip Semiconductor Ltd. MDS3753E– P-Channel Trench MOSFET Physical Dimensions MDS3753E– P-Channel Trench MOSFET DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Nov 2011 Version 1.1 6 MagnaChip Semiconductor Ltd.