PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz while the input matched transistor provides optimal gain, power and efficiency in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. The typical performance plots in the datasheet are derived with CGHV35060MP matched into a 3.1-3.5GHz high power amplifier. PN: CGHV350 60MP Typical Performance Over 3.1 - 3.5 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.3 GHz 3.5 GHz Units 14.5 14.3 13.8 dB Output Power 88 88 75 W Drain Efficiency 61 67 64 % Gain Note: Measured in the CGHV35060MP-TB amplifier circuit, under 100 μs pulse width, 10% duty cycle, PIN = 35 dBm. st 2015 Rev 1.0 – Augu Features • Reference design amplifier 3.1 - 3.5 GHz • 75W Typical output power • 14.5 dB power gain • 67% Drain efficiency • Internally pre-matched on input, unmatched output Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 150 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature ˚C TSTG -65, +150 Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 10.4 mA 25˚C Maximum Drain Current IDMAX 6.3 A 25˚C Soldering Temperature2 TS 245 ˚C CW Thermal Resistance, Junction to Case3 RθJC 2.6 ˚C/W 85˚C, PDISS = 52 W Pulsed Thermal Resistance, Junction to Case RθJC 1.95 ˚C/W 85˚C, PDISS = 62 W, 100 μsec 10% TC -40, +107 ˚C CW 1 Case Operating Temperature4 Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV35060MP 4 See also, the Power Dissipation De-rating Curve on Page 4. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 10.4 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 125 mA Saturated Drain Current IDS 8.4 10.4 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 10.4 mA DC Characteristics Conditions 1 2 RF Characteristics4 (TC = 25˚C, F0 = 3.3 GHz unless otherwise noted) Saturated Output Power3 PSAT – 75 – W VDD = 50 V, IDQ = 125 mA, PIN = 35 dBm Pulsed Drain Efficiency3 η – 67 – % VDD = 50 V, IDQ = 125 mA, PIN = 35 dBm Gain3 G – 14.5 – dB VDD = 50 V, IDQ = 125 mA, PIN = 35 dBm Gain G – 17 – dB VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm ACLR – -35 – dBc VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm η – 35 – % VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm VSWR – – TBD Y No damage at all phase angles, VDD = 50 V, IDQ = 125 mA, POUT = 60 W Pulsed CGS – 32.16 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 4.4 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.5 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz 5 WCDMA Linearity5 Drain Efficiency5 Output Mismatch Stress3 Dynamic Characteristics Input Capacitance6 6 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 100 µs, Duty Cycle = 10% 4 Measured in CGHV35060MP-TB. 5 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V. 6 Includes package. Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV35060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - Small Signal Gain and Return Losses of the CGHV35060MP CGHV35060MP Measured in Demonstration Circuit 35dBm pin,Amplifier 10% 100us, Vd 50V,CGHV35060MP-TB Id 125mA 20 15 Gain and Return Loss (dB) 10 5 0 -5 -10 S21 -15 S11 S22 -20 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 Frequency (GHz) 3.6 3.7 3.8 Figure 2. - Gain, Efficiency & Output Power for the CGHV35060MP at PIN = 35 dBm with CGHV35060MP 100 μs/10% as Measured in Demonstration Amplifier Circuit CGHV35060MP 35dBm pin, 10% 100us, Vd 50V, Id 125mA Output Power (W), Gain (dB), & Efficiency (%) 100 Output Power 90 80 70 60 Efficiency 50 40 30 20 Output Power(W) Gain (dB) Efficiency (%) Gain 10 0 3.05 Gain 3.10 3.15 3.20 3.25 3.30 3.35 Frequency (GHz) 3.40 3.45 3.50 Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV35060MP Rev 1.0 3.55 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV35060MP Power Dissipation De-rating Curve Power dissipation derating curve vs. Max Tcase Pulsed (100 uS/ 10% duty) 100 90 80 Power dissipation (W) 70 60 50 Note 1 40 30 20 Pulse 100uS / 10% 10 0 0 50 100 150 200 250 Case Temperature (C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV35060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV35060MP Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV35060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV35060MP Plastic Overmold Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency Value Units 3.5 GHz Power Output 60 W Package MP - 1 Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV35060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV35060MP GaN HEMT Each Test board with GaN HEMT installed Each CGHV35060MP-AMP1 Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV35060MP Rev 1.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV35060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf