HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 900 900 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 10 12 13 40 48 13 10 12 13 A A A A A A A A A EAR TC = 25°C 30 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90 TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Symbol 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Test Conditions VDSS VGS(th) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 RDS(on) 900 V 900 V 900 V 10 A 12 A 13 A 1.1 W 0.9 W 0.8 W 4.5 V V ±100 nA TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) G D G = Gate, S = Source, D = Drain, TAB = Drain Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays l l l l l l l TJ = 25°C TJ = 125°C 10N90 12N90 13N90 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved ID25 trr £ 250 ns Symbol TJ TJM Tstg VDSS 25 1 mA mA 1.1 0.9 0.8 W W W l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l l l 91530G (3/98) 1-4 IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 6 12 S 4200 pF 315 pF 90 pF TO-247 AD (IXFH) Outline 18 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 12 50 ns td(off) RG = 2 W (External) 51 100 ns 18 50 ns 123 155 nC 27 45 nC 49 80 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.42 RthCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 10N90 12N90 13N90 10 12 13 A A A ISM Repetitive; pulse width limited by TJM 10N90 12N90 13N90 40 48 52 A A A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V TJ = 25°C TJ = 125°C 250 400 ns ns t rr QRM IF = IS -di/dt = 100 A/ms, VR = 100 V IRM TJ = 25°C TJ = 125°C 1 2 mC mC TJ = 25°C TJ = 125°C 10 15 A A Dim. Millimeter Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AA (IXFM) Outline Dim. A B C D E F G H J K Q R © 2000 IXYS All rights reserved Inches Min. Max. Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 2-4 IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90 Fig. 1 Output Characteristics 20 TJ = 25°C 18 Fig. 2 Input Admittance 20 VGS = 10V 18 7V 16 6V 14 ID - Amperes ID - Amperes 16 12 10 8 6 5V 14 12 TJ = 25°C 10 8 6 4 4 2 2 0 0 0 5 10 15 20 0 1 2 3 VDS - Volts 6 7 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.5 2.50 TJ = 25°C 2.25 RDS(on) - Normalized 1.4 RDS(on) - Normalized 5 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.3 1.2 VGS = 10V 1.1 VGS = 15V 1.0 2.00 1.75 1.50 ID = 6A 1.25 1.00 0.75 0.9 0 5 10 15 20 0.50 -50 25 -25 0 ID - Amperes 50 75 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 20 VGS(th) 18 BVDSS 1.1 14 BV/VG(th) - Normalized 16 12N90 12 10 10N90 8 6 4 1.0 0.9 0.8 0.7 0.6 2 0 -50 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes 4 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 ID - Amperes 8 VGE - Volts 10µs VDS = 450V ID = 13A IG = 10mA 6 4 100µs 10 Limited by RDS(on) 1ms 10ms 1 100ms 2 0 0.1 0 25 50 75 100 125 150 1 10 100 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves Fig.10Source Current vs. Source to Drain Voltage 4500 18 Ciss 4000 16 3500 14 3000 ID - Amperes Capacitance - pF 1000 f = 1 MHz VDS = 25V 2500 2000 1500 1000 0 5 10 8 TJ = 125°C 6 TJ = 25°C 2 Crss 0 10 4 Coss 500 12 15 20 0 0.0 25 0.2 VCE - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4