SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT755 ISSUE 5 – MARCH 2005 FEATURES * 150 Volt VCEO * Low saturation voltage * Excellent hFE specified up to 1A (pulsed). C E COMPLEMENTARY TYPE – PARTMARKING DETAIL – FZT655 FZT755 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage V CBO -150 Collector-Emitter Voltage V CEO -150 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current IC -1 A Power Dissipation at T amb=25°C P tot 2 W Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. C o l l e c t o r - B a s e V(BR)CBO Breakdown Voltage -150 V IC=-100µA C o l l e c t o r - E m i t t e r V(BR)CEO Breakdown Voltage -150 V IC=-10mA* -5 V IE=-100µA Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO -0.1 µA VCB=-125V Emitter Cut-Off Current IEBO -0.1 µA VEB=-3V C o l l e c t o r - E m i t t e r VCE(sat) Saturation Voltage -0.5 -0.5 V V IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-500mA, VCE=-5V* Static Forward Current hFE Transfer Ratio 50 50 20 Transition Frequency fT 30 Output Capacitance Cobo IC=-10mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* 300 MHz 20 pF *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% TBA IC= - 1 0 m A , f=20MHz VCE=-20V VCB=-10V f=1MHz FZT755 TYPICAL CHARACTERISTICS td tr tf µs ts µs 0.8 0.4 Switching time VCE(sat) - (Volts) 0.6 IC/IB=10 0.4 0.2 0 0.001 0.01 0.1 IB1=IB2=IC/10 VCE=10V ts 2.0 0.5 td 0.3 tf 1.0 0.2 tr 0.1 0 0.01 1 IC - Collector Current (Amps) 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.0 IC/IB=10 80 VCE=5V VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 60 40 20 0.001 0.01 0.1 1 0.8 0.6 0.4 0.2 10 0.001 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (A) VBE - (Volts) VCE=5V 1.0 0.8 0.6 0.0001 0.001 0.01 0.1 1 1 DC 100ms 10ms 1ms 300µs 0.1 0.01 0.1 1 10 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) VBE(on) v IC Safe Operating Area TBA 1 Single Pulse Test at Tamb=25°C 10 1.2 0.4 0.1 0.01 100