DSK MUR1010F Super fast rectifier Datasheet

Diode Semiconductor Korea
MUR1005F - - - MUR1060F
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 10 A
SUPER FAST RECT IFIERS
FEATURES
Low cos t
Low leakage
ITO-220AC
4.5± 0.2
10.2± 0.2
3.1+0.2
-0.1
1
4.0± 0.3
13.5± 0.5
MECHANICAL DATA
2
Cas e:JEDEC ITO-220AC,molded plastic
Term inals : Solderable per
? 3.2± 0.2
PIN
The plas tic m aterial carries U/L recognition 94V-0
8.2± 0.2
16.5± 0.3
15.2± 0.5
High current capability
Eas ily cleaned with alcohol,Is opropanol
and s im ilar s olvents
φ 3 .3± 0.1
Low forward voltage drop
2.6± 0.2
1.4± 0.1
0.6± 0.1
MIL- STD-750,Method 2026
Polarity: As marked
0.6± 0.1
5.0± 0.1
Weight: 0.064 ounces,1.81 gram
Dimensions in millimeters
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
MUR
MUR
MUR
MUR
MUR
MUR
1005F
1010F
1015F
1020F
1040F
1060F
UNITS
Maximum recurrent peak reverse voltage
V RR M
50
100
150
200
400
600
V
Maximum RMS voltage
VRMS
35
70
105
140
280
420
V
Maximum DC blocking voltage
V DC
50
100
150
200
400
600
V
Maximum average f orw ard rectif ied current
@TC =100
IF(AV)
10
A
IFSM
125
A
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous f orw ard voltage
VF
@ 10A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =125
Maximum reverse recovery time
(Note1)
Operating junction temperature range
Storage temperature range
IR
t rr
1.3
0.975
1.5
5.0
10.0
250
500
25
50
TJ
- 55 ----- + 150
TSTG
- 55 ----- + 150
V
A
ns
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
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Diode Semiconductor Korea
MUR1005F - - - MUR1060F
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
0
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-1.0A
1cm
SET TIME BASE FOR 10/20 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- PEAK FORWARD SURGE CURRENT
F
60
F
40
10
UR
M
M
UR
10
00
R1
MU
10
1.0
0.1
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
125
100
AMPERES
PEAK FORWARD SURGE CURRENT
10
20
F
5F
~M
UR
100
8.3ms Single Half Sine Wave
TJ=125
75
50
25
0
1
10
100
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
z
FIG.4-FORWORD
DERATING CURVE
12
10
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
1000
8.0
6.0
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
4.0
2.0
0
0
25
50
75
100
125
150
175
CASE TEMPERATURE,
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