Diode Semiconductor Korea MUR1005F - - - MUR1060F VOLTAGE RANGE: 50 --- 600 V CURRENT: 10 A SUPER FAST RECT IFIERS FEATURES Low cos t Low leakage ITO-220AC 4.5± 0.2 10.2± 0.2 3.1+0.2 -0.1 1 4.0± 0.3 13.5± 0.5 MECHANICAL DATA 2 Cas e:JEDEC ITO-220AC,molded plastic Term inals : Solderable per ? 3.2± 0.2 PIN The plas tic m aterial carries U/L recognition 94V-0 8.2± 0.2 16.5± 0.3 15.2± 0.5 High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents φ 3 .3± 0.1 Low forward voltage drop 2.6± 0.2 1.4± 0.1 0.6± 0.1 MIL- STD-750,Method 2026 Polarity: As marked 0.6± 0.1 5.0± 0.1 Weight: 0.064 ounces,1.81 gram Dimensions in millimeters Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. MUR MUR MUR MUR MUR MUR 1005F 1010F 1015F 1020F 1040F 1060F UNITS Maximum recurrent peak reverse voltage V RR M 50 100 150 200 400 600 V Maximum RMS voltage VRMS 35 70 105 140 280 420 V Maximum DC blocking voltage V DC 50 100 150 200 400 600 V Maximum average f orw ard rectif ied current @TC =100 IF(AV) 10 A IFSM 125 A Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage VF @ 10A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 Maximum reverse recovery time (Note1) Operating junction temperature range Storage temperature range IR t rr 1.3 0.975 1.5 5.0 10.0 250 500 25 50 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 V A ns NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.diode.kr Diode Semiconductor Korea MUR1005F - - - MUR1060F FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) 0 -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- PEAK FORWARD SURGE CURRENT F 60 F 40 10 UR M M UR 10 00 R1 MU 10 1.0 0.1 Tj=25oC Pulse Width=300 s 1% Duty Cycle .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 125 100 AMPERES PEAK FORWARD SURGE CURRENT 10 20 F 5F ~M UR 100 8.3ms Single Half Sine Wave TJ=125 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS z FIG.4-FORWORD DERATING CURVE 12 10 AMPERES AVERAGE FORWARD CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT 1000 8.0 6.0 Single Phase Half Wave 60HZ Resistive or Inductive Load 4.0 2.0 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE, www.diode.kr