Plastic-Encapsulate Transistors FEATURES BC846A/B (NPN) BC847A/B/C (NPN) BC848A/B/C (NPN) For general AF applications High collector current High current gain Low collector-emitter saturation voltage Marking BC846A BC846B 1A 1B BC847C BC848A 1G 1J BC847A 1E BC848B 1K BC847B 1F BC848C 1. BASE 1L 2. EMITTER SOT-23 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit V BC846 VCBO 80 BC847 VCBO 50 BC848 VCBO 30 BC846 VCEO 65 BC847 VCEO 45 BC848 VCEO 30 VEBO 6 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. V Page:P3-P1 Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Test conditions BC846 BC847 IC= 10µA, IE=0 Collector cut-off current 30 VCEO VEBO BC846 BC847 ICBO BC848 Collector cut-off current BC846 BC847 ICEO BC848 IEBO Emitter cut-off current DC current gain IC= 10mA, IB=0 V 45 IE= 10µA, IC=0 VCB=70 V , IE=0 VCB=50 V , IE=0 VCB=30 V , IE=0 VCE=60 V , IB=0 VCE=45 V , IB=0 VCE=30 V , VEB=5 V , hFE VCE= 5V, 30 V 6 V IB=0 IC=0 BC846A,847A,848A BC846B,847B,848B Unit 65 BC848 Emitter-base breakdown voltage Max 50 BC846 BC847 Typ 80 VCBO BC848 Collector-emitter breakdown voltage Min IC= 2mA BC847C,BC848C 0.1 μA 0.1 μA 0.1 μA 110 220 200 450 420 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1.1 V fT Transition frequency f=100MHz Collector output capacitance BC846A/B BC847A/B/C BC848A/B/C VCE= 5 V, IC= 10mA Cob VCB=10V,f=1MHz 100 MHz 4.5 pF Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P3-P2 Plastic-Encapsulate Transistors BC846A/B BC847A/B/C BC848A/B/C Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P3-P3