PD - 95429
IRG4BC40WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Lead-Free
C
VCES = 600V
VCE(on) typ. = 2.05V
G
@VGE = 15V, IC = 20A
E
n-channel
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
V
A
V
mJ
W
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
0.5
2.0 (0.07)
0.77
80
Units
°C/W
g (oz)
1
06/17/04
IRG4BC40WPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 18
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.44
V/°C VGE = 0V, IC = 1.0mA
2.05 2.5
IC = 20A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
2.36
IC = 40A
See Fig.2, 5
V
1.90
IC = 20A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
6.0
VCE = VGE, IC = 250µA
∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage
13
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
18
28
S
VCE = 100 V, IC =20A
250
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
2500
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±100
nA VGE = ±20V
V(BR)CES
V(BR)ECS
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
t d(on)
tr
td(off)
tf
Eon
Eoff
E ts
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
98
12
36
27
22
100
74
0.11
0.23
0.34
25
23
170
124
0.85
7.5
1900
140
35
Max. Units
Conditions
147
IC =20A
18
nC
VCC = 400V
See Fig.8
54
VGE = 15V
TJ = 25°C
ns
150
IC = 20A, VCC = 480V
110
VGE = 15V, RG = 10Ω
Energy losses include "tail"
mJ
See Fig. 9,10, 14
0.45
TJ = 150°C,
IC = 20A, VCC = 480V
ns
VGE = 15V, RG = 10Ω
Energy losses include "tail"
mJ
See Fig. 10,11, 14
nH
Measured 5mm from package
VGE = 0V
pF
VCC = 30V
See Fig. 7
= 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40WPbF
50
For both:
40
Load Current ( A )
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 28W
Clamp voltage:
80% of rated
30
Square wave:
60% of rated
voltage
20
10
Ideal diodes
A
0
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
TJ = 25 ° C
100
TJ = 150 °C
10
V GE = 15V
80µs PULSE WIDTH
1
1.0
2.0
3.0
4.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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5.0
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
100
TJ = 150 °C
10
TJ = 25 °C
V CC = 50V
5µs PULSE WIDTH
1
5
7
9
11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC40WPbF
3.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
50
40
30
20
10
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 40 A
2.5
IC = 20 A
2.0
IC = 10 A
1.5
1.0
-60 -40 -20
TC , Case Temperature ( °C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40WPbF
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
3000
Cies
2000
Coes
1000
Cres
20
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
4000
0
1
10
16
12
8
4
0
100
0
VCE , Collector-to-Emitter Voltage (V)
20
40
60
80
100
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.0
10
V CC = 480V
V GE = 15V
0.9 TJ = 25 °C
I C = 20A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC = 400V
I C = 20A
0.8
0.7
0.6
0.5
RG = 10
10Ohm
Ω
VGE = 15V
VCC = 480V
IC = 40 A
1
IC = 20 A
IC = 10 A
0.4
0.3
10
20
30
40
50
RG , Gate Resistance (Ω)
(Ohm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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60
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC40WPbF
RG
TJ
VCC
VGE
1000
Ω
=10
10Ohm
= 150 ° C
= 480V
= 15V
I C, Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
2.0
1.5
1.0
0.5
100
SAFE OPERATING AREA
0.0
5
15
25
35
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
VGE = 20V
T J = 125 oC
45
10
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC40WPbF
L
D.U.T.
RL =
VC *
50V
0 - 480V
1000V
480V
4 X I C@25°C
480µF
960V
c
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
Driver*
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
VC
50V
1000V
c
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4BC40WPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- EMITTER
3- SOURCE
4 - DRAIN
1.15 (.045)
MIN
1
2
3
4- DRAIN
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
HEXFET
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
0.55 (.022)
0.46 (.018)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP L E : T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/