NSC NM93CS66LVN 256-/1024-/2048-/4096-bit serial eeprom with extended voltage (2.7v to 5.5v) and data protect (microwire-tm bus interface) Datasheet

NM93CS06L/CS46L/CS56L/CS66L
256-/1024-/2048-/4096-Bit Serial EEPROM
with Extended Voltage (2.7V to 5.5V) and Data Protect
(MICROWIRE TM Bus Interface)
General Description
The NM93CS06L/CS46L/CS56L/CS66L devices are
256/1024/2048/4096 bits, respectively, of non-volatile
electrically erasable memory divided into 16/64/128/256 x
16-bit registers (addresses). The NM93CSxxL Family functions in an extended voltage operating range, and is fabricated using National Semiconductor’s floating gate CMOS
technology for high reliability, high endurance and low power consumption. N registers (N s 16, N s 64, N s 128, N s
256) can be protected against data modification by programming the Protect Register with the address of the first
register to be protected against data modification. (All registers greater than, or equal to, the selected address are then
protected from further change.) Additionally, this address
can be ‘‘locked’’ into the device, making all future attempts
to change data impossible.
These devices are available in both SO and TSSOP packages for small space considerations.
The serial interface that controls these EEPROMs is
MICROWIRE compatible, providing simple interfacing to
standard microcontrollers and microprocessors. There
are a total of 10 instructions, 5 which operate on the EEPROM
memory and 5 which operate on the Protect Register. The
memory instructions are READ, WRITE, WRITE ALL,
WRITE ENABLE, and WRITE DISABLE. The Protect register instructions are PRREAD, PRWRITE, PRCLEAR,
PRDISABLE and PRENABLE.
Features
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Sequential register read
Write protection in a user defined section of memory
2.7V to 5.5V operating range in all modes
Typical active current of 200 mA; typical standby
current of 1 mA
No erase required before write
Reliable CMOS floating gate technology
MICROWIRE compatible serial I/O
Self timed write cycle
Device status during programming mode
40 year data retention
Endurance: 106 data changes
Packages Available: 8-pin SO, 8-pin DIP, and 8-pin
TSSOP
Block Diagram
TL/D/10044 – 1
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
MICROWIRETM is a trademark of National Semiconductor Corporation.
C1996 National Semiconductor Corporation
TL/D/10044
RRD-B30M126/Printed in U. S. A.
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NM93CS06L/CS46L/CS56L/CS66L 256-/1024-/2048-/4096-Bit Serial EEPROM
with Extended Voltage (2.7V to 5.5V) and Data Protect (MICROWIRE Bus Interface)
August 1996
Connection Diagrams
Pin Names
Dual-In-Line Package (N)
8-Pin SO Package (M8) and 8-Pin TSSOP Package (MT8)
CS
Chip Select
SK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
GND
TL/D/10044–2
PE
Top View
See NS Package Number N08E (N)
See NS Package Number M08A (M8)
See NS Package Number MTC08 (MT8)
Ground
Program Enable
PRE
Protect Register Enable
VCC
Power Supply
Ordering Information
Commercial Temp. Range (0§ C to a 70§ C)
Order Number
NM93CS06LN/NM93CS46LN/NM93CS56LN/NM93CS66LN
NM93CS06LM8/NM93CS46LM8/NM93CS56LM8/NM93CS66LM8
NM93CS46LMT8/NM93CS56LMT8/NM93CS66LMT8
Extended Temp. Range (b40§ C to a 85§ C)
Order Number
NM93CS06LEN/NM93CS46LEN/NM93CS56LEN/NM93CS66LEN
NM93CS06LEM8/NM93CS46LEM8/NM93CS56LEM8/NM93CS66LEM8
NM93CS46LEMT8/NM93CS56LEMT8/NM93CS66LEMT8
Automotive Temp. Range (b40§ C to a 125§ C)
Order Number
NM93CS06LVN/NM93CS46LVN/NM93CS56LVN/NM93CS66LVN
NM93CS06LVM8/NM93CS46LVM8/NM93CS56LVM8/NM93CS66LVM8
NM93CS46LVMT8/NM93CS56LVMT8/NM93CS66LVMT8
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2
Absolute Maximum Ratings
Operating Conditions
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Ambient Operating Temperature
NM93CSxxL
NM93CSxxLE
Ambient Storage Temperature
Power Supply (VCC) Range
Read Mode
WRALL Bulk Programming
All Other Modes
All Input or Output Voltages
with Respect to Ground
Lead Temperature (Soldering, 10 sec.)
ESD rating
b 65§ C to a 150§ C
a 6.5V to b 0.3V
a 300§ C
0§ C to a 70§ C
b 40§ C to a 85§ C
2.0V to 5.5V
3.0V to 5.5V
2.5V to 5.5V
2000V
DC and AC Electrical Characteristics: 2V k VCC k 4.5V
Max
Units
ICCA
Symbol
Operating Current
Parameter
CS e VIH, SK e 250 kHz
Conditions
Min
1
mA
ICCS
Standby Current
CS e VIL
50
mA
IIL
IOL
Input Leakage
Output Leakage
VIN e 0V to VCC
(Note 4)
g1
mA
VIL
VIH
Input Low Voltage
Input High Voltage
0.15 VCC
VCC a 1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL e 10 mA
IOH e b10 mA
fSK
SK Clock Frequency
(Note 5)
tSKH
SK High Time
tSKL
SK Low Time
tSKS
SK Setup Time
SK must be at VIL for
tSKS before CS goes high
tCS
Minimum CS
Low Time
(Note 2)
tCSS
b 0.1
0.8 VCC
0.1 VCC
V
250
kHz
0.9 VCC
0
1
ms
1
ms
0.2
ms
1
ms
CS Setup Time
0.2
ms
tPRES
PRE Setup Time
0.2
ms
tPES
PE Setup Time
0.2
ms
tDIS
DI Setup Time
0.4
ms
tDH
DO Hold Time
70
ns
tCSH
CS Hold Time
0
ms
tPEH
PE Hold Time
0.4
ms
tPREH
PRE Hold Time
0.4
ms
tDIH
DI Hold Time
0.4
tPD1
Output Delay to ‘‘1’’
tPD0
tSV
tDF
CS to DO in
TRI-STATEÉ
tWP
Write Cycle Time
ms
2
ms
Output Delay to ‘‘0’’
2
ms
CS to Status Valid
1
ms
0.4
ms
15
ms
CS e VIL
3
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DC and AC Electrical Characteristics: 4.5V k VCC k 5.5V
Max
Units
ICCA
Symbol
Operating Current
CMOS Input Levels
Parameter
CS e VIH, SK e 1.0 MHz
1
mA
ICCS
Standby Current
CS e VIL
50
mA
IIL
IOL
Input Leakage
Output Leakage
VIN e 0V to VCC
g1
mA
VIL
VIH
Input Low Voltage
Input High Voltage
0.8
VCC a 1
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL e 2.1 mA
IOL e 400 mA
2.4V
VOL2
VOH2
Output Low Voltage
Output High Voltage
IOL e 10 mA
IOL e b10 mA
VCCb0.2
fSK
SK Clock Frequency
tSKH
SK High Time
tSKL
SK Low Time
tSKS
SK Setup Time
SK must be at VIL for
tSKS before CS goes High
tCS
Minimum CS
Low Time
(Note 2)
250
tCSS
CS Setup Time
50
ns
tPRES
PRE Setup Time
50
ns
tDH
DO Hold Time
70
ns
tPES
PE Setup Time
50
ns
tDIS
DI Setup Time
100
ns
tCSH
CS Hold Time
0
ns
tPEH
PE Hold Time
250
ns
tPREH
PRE Hold Time
50
ns
tDIH
DI Hold Time
20
tPD1
Output Delay to ‘‘1’’
500
ns
tPD0
Output Delay to ‘‘0’’
500
ns
tSV
CS to Status Valid
500
ns
tDF
CS to DO in
TRI-STATE
100
ns
tWP
Write Cycle Time
10
ms
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Part Number
Conditions
Min
(Note 4)
b 0.1
2
(Note 5)
NM93CS06L-NM93CS66L
NM93CS06LE-NM93CS66LE
CS e VIL
4
0.4
0.2
0
1
V
V
MHz
250
300
ns
250
ns
50
ns
ns
ns
Capacitance (Note 3)
TA e 25§ C f e 1 MHz
Test
Max
Units
COUT
Symbol
Output Capacitance
5
pF
CIN
Input Capacitance
5
pF
Note 1: Stress ratings above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device. This is a stress rating only and
operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note 2: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all internal device registers (device reset) prior to beginning another
opcode cycle (This is shown in the opcode diagrams in the following pages).
Note 3: This parameter is periodically sampled and not 100% tested.
Note 4: Typical leakage values are in the 20 nA range.
Note 5: The shortest allowable SK clock period e 1/fSK (as shown under the fSK parameter). Maximum SK clock speed (minimum SK period) is determined by the
interaction of several AC parameters stated in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not allowable to set
1/fSK e tSKH (minimum) a tSKL (minimum) for shorter SK cycle time operation,
AC Test Conditions
VIL/VIH
Input Levels
VIL/VIH
Timing Level
VOL/VOH
Timing Level
IOL/IOH
2.0V s VCC k 4.5V
(Extended Voltage Levels)
0.3V/1.8V
1.0V
0.8V/1.5V
g 10 mA
4.5V s VCC s 5.5V
(TTL Levels)
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
b 2.1 mA/0.4 mA
VCC Range
Output Load: 1 TTL Gate (CL e 100 pF)
5
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Functional Description
The extended voltage EEPROMs of the NM93CSxxL Family
have 10 instructions as described below. Note that MSB of
any instruction is a ‘‘1’’ and is viewed as a start bit in the
interface sequence. For the CS06 and CS46 the next 8 bits
carry the opcode and the 6-bit address for register selection. For the CS56 and CS66, the next 10 bits carry the
opcode and the 8-bit address for register selection. All Data
In signals are clocked into the device on the low-to-high SK
transition.
Protect Register Read (PRREAD):
The PRREAD instruction outputs the address stored in the
Protect Register on the DO pin. The PRE pin MUST be held
high while loading the instruction sequence. Following the
PRREAD instruction the 6- or 8-bit address stored in the
memory protect register is transferred to the serial out shift
register. As in the READ mode, a dummy bit (logical 0) precedes the 6- or 8-bit address string.
Protect Register Enable (PREN):
The PREN instruction is used to enable the PRCLEAR,
PRWRITE, and PRDS modes. Before the PREN mode can
be entered, the part must be in the Write Enable (WEN)
mode. Both the PRE and PE pins MUST be held high while
loading the instruction sequence.
Note that a PREN instruction must immediately precede a
PRCLEAR, PRWRITE, or PRDS instruction.
Read and Sequential Register Read (READ):
The READ instruction outputs serial data on the D0 pin.
After a READ instruction is received, the instruction and address are decoded, followed by data transfer from the selected memory register into a 16-bit serial-out shift register.
A dummy bit (logical 0) precedes the 16-bit data output
string. Output data changes are initiated by a low to high
transition of the SK clock. In the Sequential Read mode of
operation, the memory automatically cycles to the next register after each 16 data bits are clocked out. The dummy-bit
is suppressed in this mode and a continuous string of data is
obtained.
Protect Register Clear (PRCLEAR):
The PRCLEAR instruction clears the address stored in the
Protect Register and therefore enables all registers for the
WRITE and WRALL instruction. The PRE and PE pins must
be held high while loading the instruction sequence; however, after loading the PRCLEAR instruction, the PRE and PE
pins become ‘‘don’t care’’. Note that a PREN instruction
must immediately precede a PRCLEAR instruction.
Please note that the PRCLEAR instruction and the
PRWRITE instruction will both program the Protect Register
with all 1s. However, the PRCLEAR instruction will allow the
LAST register to be programmed, whereas the PRWRITE
instruction e all 1s will PREVENT the last register from
being programmed. In addition, the PRCLEAR instruction
will allow the use of the WRALL command, where the
PRWRITE e all 1s will lock out the Bulk programming opcode.
Write Enable (WEN):
When VCC is applied to the part, it ‘‘powers up’’ in the Write
Disable (WDS) state. Therefore, all programming modes
must be preceded by a Write Enable (WEN) instruction.
Once a Write Enable instruction is executed, programming
remains enabled until a Write Disable (WDS) instruction is
executed or VCC is removed from the part.
Write (WRITE):
The WRITE instruction is followed by 16 bits of data to be
written into the specified address. After the last bit of data is
allocated to the data-in (DI) pin, CS must be brought low
before the next rising edge of the SK clock. This falling edge
of the CS initiates the self-timed programming cycle. The PE
pin MUST be held high while loading the WRITE instruction;
however, after loading the WRITE instruction, the PE pin
becomes a ‘‘don’t care’’. The D0 pin indicates the READY/
BUSY status of the chip if CS is brought high after the tCS
internal. D0 e logical 0 indicates that programming is still in
progress. D0 e logical 1 indicates that the register at the
address specified in the instruction has been written with
the data pattern specified in the instruction and that the part
is ready for another instruction.
Protect Register Write (PRWRITE):
The PRWRITE instruction is used to write into the Protect
Register the address of the first register to be protected.
After the PRWRITE instruction is executed, all memory registers whose addresses are greater than or equal to the
address specified in the Protect Register are protected from
the WRITE operation. Note that before executing a
PRWRITE instruction, the Protect Register must first be
cleared by executing a PRCLEAR operation and the PRE
and PE pins must be held high while loading the instruction;
however, after loading the PRWRITE instruction, the PRE
and PE pins become ‘‘don’t care’’. Note that a PREN instruction must immediately precede a PRWRITE instruction.
Write All (WRALL):
The WRALL instruction is valid only when the Protect Register has been cleared by executing a PRCLEAR instruction.
The WRALL instruction will simultaneously program all registers with the data pattern specified in the instruction. Like
the WRITE instruction, the PE pin MUST be held high while
loading the WRALL instruction; however, after loading the
WRITE instruction, the PE pin becomes a ‘‘don’t care’’. As
in the WRITE mode, the DO pin indicates the READY/
BUSY status of the chip if CS is brought high after the tCS
interval. This function is DISABLED if the protect register is
in use to lock out a section memory.
Protect Register Disable (PRDS):
The PRDS instruction is a ONE TIME ONLY instruction
which renders the Protect Register unalterable in the future.
Therefore, the specified registers become PERMANENTLY
protected against data changes. As in the PRWRITE instruction the PRE and PE pins must be held high while
loading the instruction, and after loading the PRDS instruction the PRE and PE pins become ‘‘don’t care’’.
Note that a PREN instruction must immediately precede a
PRDS instruction.
Write Disable (WDS):
To protect against accidental data disturb, the WDS instruction disables all programming modes and should follow all
programming operations. Execution of a READ instruction is
independent of both the WEN and WDS instructions.
Note: For all protect register operations: If the PRE pin is
not held at VIH, all instructions will be applied to the
EEPROM array, rather than the Protect Register.
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6
Instruction Set for the NM93CS06L and NM93CS46L
SB
Op Code
Address
READ
Instruction
1
10
A5–A0
Data
PRE
PE
Comments
0
X
Reads data stored in memory, starting at specified address.
WEN
1
00
11XXXX
WRITE
1
01
A5–A0
D15–D0
0
1
Enable all programming modes.
0
1
WRALL
1
00
01XXXX
D15–D0
Writes address if unprotected.
0
1
Writes all registers. Valid only when Protect Register is
cleared.
WDS
1
00
PRREAD
1
10
00XXXX
0
X
Disables all programming modes.
XXXXXX
1
X
PREN
1
00
Reads address stored in Protect Register.
11XXXX
1
1
Must immediately precede PRCLEAR, PRWRITE, and
PRDS instructions.
PRCLEAR
1
11
111111
1
1
Clears the Protect Register so that no registers are
protected from WRITE.
PRWRITE
1
01
A5–A0
1
1
Programs address into Protect Register. Thereafter,
memory addresses t the address in Protect Register are
protected from WRITE.
PRDS
1
00
000000
1
1
ONE TIME ONLY instruction after which the address in the
Protect Register cannot be altered.
Note: Address bits A5 and A4 become ‘‘Don’t Care’’ for the NM93CS06L.
Instruction Set for the NM93CS56L and NM93CS66L
SB
Op Code
Address
PRE
PE
Comments
READ
Instruction
1
10
A7–A0
Data
0
X
Reads data stored in memory, starting at specified address.
WEN
1
00
11XXXXXX
0
1
Enable all programming modes.
WRITE
1
01
A7–A0
D15– D0
0
1
Writes address if unprotected.
WRALL
1
00
01XXXXXX
D15– D0
0
1
Writes all registers. Valid only when Protect Register is
cleared.
WDS
1
00
00XXXXXX
0
X
Disables all programming modes.
PRREAD
1
10
XXXXXXXX
1
X
Reads address stored in Protect Register.
PREN
1
00
11XXXXXX
1
1
Must immediately precede PRCLEAR, PRWRITE, and
PRDS instructions.
PRCLEAR
1
11
11111111
1
1
Clears the ‘‘protect register’’ so that no registers are
protected from WRITE.
PRWRITE
1
01
A7–A0
1
1
Programs address into Protect Register. Thereafter,
memory addresses t the address in Protect Register are
protected from WRITE.
PRDS
1
00
00000000
1
1
ONE TIME ONLY instruction after which the address in the
Protect Register cannot be altered.
Note: Address bit A7 becomes ‘‘Don’t Care’’ for the NM93CS56L.
7
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Timing Diagrams
Synchronous Data Timing
TL/D/10044 – 15
READ:
PRE e 0, PE e X
TL/D/10044 – 5
² The
memory automatically cycles to the next register.
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8
Timing Diagrams (Continued)
WEN:
PRE e 0, D0 e TRI-STATE
TL/D/10044 – 6
WDS:
PRE e 0, PE e X, DO e TRI-STATE
TL/D/10044 – 7
WRITE:
PRE e 0
TL/D/10044 – 8
9
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Timing Diagrams (Continued)
WRALL:
PRE e 0
(PROTECT REGISTER MUST BE CLEARED)
TL/D/10044 – 9
PRREAD:
PE e X
TL/D/10044 – 10
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10
Timing Diagrams (Continued)
PREN:
D0 e TRI-STATE
(A WEN CYCLE MUST PRECEDE A PREN CYCLE)
TL/D/10044 – 11
PRCLEAR:
(A PREN CYCLE MUST IMMEDIATELY PRECEDE A PRCLEAR CYCLE)
TL/D/10044 – 12
11
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Timing Diagrams (Continued)
PRWRITE:
(A PREN CYCLE MUST IMMEDIATELY PRECEDE A PRWRITE CYCLE.
TL/D/10044 – 13
PRDS:
(ONE TIME ONLY INSTRUCTION. A PREN CYCLE MUST IMMEDIATELY PRECEDE A PRDS CYCLE.)
TL/D/10044 – 14
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Physical Dimensions inches (millimeters) unless otherwise noted
Molded Small Out-Line Package (M8)
NS Package Number M08A
Notes: Unless otherwise specified.
1. Reference JEDEC Registration M0-153, Variation AA. Dated 7/93.
8-Pin Molded TSSOP, JEDEC (MT8)
NS Package Number MTC08
13
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NM93CS06L/CS46L/CS56L/CS66L 256-/1024-/2048-/4096-Bit Serial EEPROM
with Extended Voltage (2.7V to 5.5V) and Data Protect (MICROWIRE Bus Interface)
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Molded Dual-In-Line Package (N)
NS Package Number N08E
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