IXYS IXFR14N100Q2 Hiperfet power mosfet q2-class Datasheet

IXFR14N100Q2
HiPerFETTM
Power MOSFET
Q2-Class
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
= 1000V
= 9.5A
≤ 1.1Ω
Ω
≤ 300ns
ISOPLUS247
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
9.5
A
IDM
TC = 25°C, Pulse Width Limited by TJM
56
A
IA
EAS
TC = 25°C
TC = 25°C
14
2.5
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
200
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
TL
Maximum Lead Temperature for Soldering
300
°C
TSOLD
Plastic Body for 10s
260
°C
VISOL
50/60 Hz, RMS, 1 minute
2500
V~
FC
Mounting Force
20..120/4.5..27
N/lb.
5
g
Weight
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 7A, Note 1
Characteristic Values
Min.
Typ. Max.
1000
3.0
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
Isolated Tab
G = Gate
S = Source
D = Drain
Features
• Double Metal Process for Low Gate
Resistance
• International Standard Package
• Epoxy Meet UL 94 V-0, Flammability
Classification
• Low Rds(on), Low Qg
• Avalanche Energy and Current Rated
• Fast Intrinsic Recfifier
Applications
• DC-DC Converters
• Switched-Mode and Resonant-Mode
Power Supplies, >500kHz Switching
• DC Choppers
• Pulse Generation
• Laser Drivers
V
Advantages
5.5
V
± 200
nA
• Easy to Mount
• Space Savings
• High Power Density
25 μA
1 mA
1.1
Ω
DS99229B(04/09)
IXFR14N100Q2
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
10
VDS = 10V, ID = 7A, Note 1
Ciss
Coss
ISOPLUS247 (IXFR) Outline
14
S
2800
pF
287
pF
Crss
VGS = 0V, VDS = 25V, f = 1MHz
100
pF
td(on)
12
ns
tr
Resistive Switching Times
10
ns
td(off)
VGS = 10V, VDS = 0.5 • VDSS, ID = 7A
28
ns
tf
RG = 2Ω (External)
12
ns
83
nC
20
nC
40
nC
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 7A
Qgd
0.62 °C/W
RthJC
RthCS
0.15
Source-Drain Diode
TJ = 25°C Unless Otherwise Specified)
°C/W
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
14
A
ISM
Repetitive, Pulse Width Limited by TJM
56
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
300 ns
IF = 14A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
0.8
μC
7
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFR14N100Q2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
27
14
VGS = 10V
12
7V
8V
21
I D - Amperes
10
I D - Amperes
V GS = 10V
24
8
6
6V
18
7V
15
12
9
6V
4
6
2
3
5V
5V
0
0
0
2
4
6
8
10
12
0
14
3
6
9
12
15
18
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
24
27
30
Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs.
Junction Temperature
14
3.2
VGS = 10V
7V
VGS = 10V
2.8
R D S (on) - Normalized
12
I D - Amperes
21
10
6V
8
6
4
2
2.4
2.0
I D = 14A
I D = 7A
1.6
1.2
0.8
5V
0
0
4
8
12
16
20
24
0.4
-50
28
-25
0
V DS - Volts
Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D
50
75
100
125
150
Fig. 6. Drain Current vs. Case Temperature
2.6
11
VGS = 10V
2.4
10
T J = 125ºC
9
2.2
8
2.0
I D - Amperes
R D S (on) - Normalized
25
TJ - Degrees Centigrade
1.8
1.6
1.4
7
6
5
4
3
1.2
T J = 25ºC
2
1.0
1
0.8
0
3
6
9
12
I
D
15
18
- Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
21
24
27
0
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
125
150
IXFR14N100Q2
Fig. 8. Transconductance
Fig. 7. Input Admittance
20
28
T J = - 40ºC
18
24
14
T J = 125ºC
12
25ºC
10
20
g f s - Siemens
I D - Amperes
16
- 40ºC
8
6
25ºC
16
125ºC
12
8
4
4
2
0
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
4
8
V GS - Volts
I
20
24
28
Fig. 10. Gate Charge
45
10
40
9
35
8
VDS = 500V
I D = 7A
I G = 10mA
7
30
VG S - Volts
I S - Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
12
16
- Amperes
D
25
20
T J = 125ºC
15
6
5
4
3
T J = 25ºC
10
2
5
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
V SD - Volts
10
20
30
Q
G
40
50
60
70
80
90
- nanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
1
10000
Z (th) J C - (ºC/W)
Capacitance - pF
Ciss
1000
Coss
100
0.1
Crss
f = 1MHz
10
0.01
0
5
10
15
20
25
30
35
40
V DS - Volts
1
10
100
1000
Pulse Width - milliseconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_14N100Q2 (7F) 05-28-08-B
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