LIGITEK LA73B-4-DBK.9SEF.DGM-PF Led array Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
Pb
Lead-Free Parts
LA73B-4/DBK.9SEF.DGM-PF
DATA SHEET
DOC. NO :
QW0905-LA 73B-4/DBK.9SEF.DGM-PF
REV.
:
A
DATE
:
07 - Jan. - 2009
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LA73B-4/DBK.9SEF.DGM-PF
Package Dimensions
2.4±0.5
4.4
11.6
ψ2.9X3
2.19
DBK
9SEF
DGM
9SEF
DBK
5.08
15.3
1.5
5.08
DGM
2.95
□0.5
TYP
-
-
-
+
+
+
3.0±0.5
2.54±0.5
2.54TYP
2.54±0.5
4.65 ±0.5
+ -
7.15 ±0.5
9.65 ±0.5
LDBK2640/H
LDGM2640/H
L9SEF2640-1/H-PF
2.9
3.1
2.9 3.1
3.3
3.3
4.3
4.3
1.5MAX
1.5MAX
25.0MIN
25.0MIN
□0.5
TYP
□0.5
TYP
1.0MIN
1.0MIN
2.54TYP
+
-
2.54TYP
+
-
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
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Page 2/7
PART NO. LA73B-4/DBK.9SEF.DGM-PF
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
DBK
9SEF
DGM
Forward Current
IF
30
30
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
100
60
100
mA
Power Dissipation
PD
120
75
120
mW
Ir
50
10
50
μA
Electrostatic Discharge( * )
ESD
500
2000
500
V
Operating Temperature
Topr
-20 ~ +80
℃
Storage Temperature
Tstg
-30 ~ +100
℃
Reverse Current @5V
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic
* glove
is recommended when handing these LED. All devices, equipment and machinery must be properly
grounded.
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
LA73B-4/DBK.9SEF.DGM-PF
Lens
InGaN/GaN
Blue
AlGaInP
Orange Orange Diffused
InGaN/GaN Green
Dominant Spectral
wave halfwidth
length
△λnm
λDnm
Blue Diffused
Green Diffused
Forward
voltage
@20 mA(V)
Luminous Viewing
intensity
angle
@20mA(mcd) 2θ 1/2
(deg)
Min. Typ. Max. Min. Typ.
470
30
2.8
3.5
4.0 220 450
38
605
17
1.7
2.2
2.6 220 450
50
525
36
2.8
3.5
4.0 350
38
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
700
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Page 3/7
PART NO. LA73B-4/DBK.9SEF.DGM-PF
Typical Electro-Optical Characteristics Curve
DBK CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1
01
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.0
3.0
5.0
4.0
1
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
400
450
500
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
550
100
LIGITEK ELECTRONICS CO.,LTD.
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PART NO. LA73B-4/DBK.9SEF.DGM-PF
Page 4/7
Typical Electro-Optical Characteristics Curve
9SEF CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.0
3.0
4.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
Relative Intensity@20mA
Normalize @25℃
1.2
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO.LA73B-4/DBK.9SEF.DGM-PF
Page 5/7
Typical Electro-Optical Characteristics Curve
DGM CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2.0
1.0
3.0
4.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
1.2
3.0
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
450
500
550
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
600
100
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Page 6/7
PART NO. LA73B-4/DBK.9SEF.DGM-PF
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350 ° C Max
Soldering Time:3 Seconds Max(One time only)
Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120° C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5° C/sec(max)
Solder Bath:260°C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to body)
Temp(° C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
60 Seconds Max
50
100
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
150
Time(sec)
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PART NO. LA73B-4/DBK.9SEF.DGM-PF
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5 ℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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