Excel ES29DL800FB-12RTG 32mbit(4m x 8/2m x 16) cmos 3.0 volt-only, boot sector flash memory Datasheet

EE SS II
Excel Semiconductor inc.
ES29LV320D
32Mbit(4M x 8/2M x 16)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
GENERAL FEATURES
• Minimum 100,000 program/erase cycles per sector
• 20 Year data retention at 125oC
• Single power supply operation
- 2.7V -3.6V for read, program and erase operations
SOFTWARE FEATURES
• Sector Structure
- 8Kbyte x 8 boot sectors
- 64Kbyte x 63 sectors
- 256byte security sector
•
•
•
•
•
•
• Top or Bottom boot block
- ES29LV320DT for Top boot block device
- ES29LV320DB for Bottom boot block device
• A 256 bytes of extra sector for security code
- Factory lockable
- Customer lockable
HARDWARE FEATURES
• Hardware reset input pin ( RESET#)
- Provides a hardware reset to device
- Any internal device operation is terminated and the
device returns to read mode by the reset
• Package Options
- 48-pin TSOP
- Pb-free packages
- All Pb-free products are RoHS-Compliant
• Ready/Busy# output pin ( RY/BY#)
- Provides a program or erase operational status
about whether it is finished for read or still being
progressed
• Low Vcc write inhibit
• Manufactured on 0.18um process technology
• Compatible with JEDEC standards
- Pinout and software compatible with single-power
supply flash standard
• WP#/ACC input pin
- Two outermost boot sectors are protected when
WP# is set to low, regardless of sector protection
- Program speed is accelerated by raising WP#/ACC
to a high voltage (12V)
DEVICE PERFORMANCE
• Read access time
- 90ns/120n for normal Vcc range ( 2.7V - 3.6V )
- 80ns for regulated Vcc range ( 3.0V - 3.6V )
• Sector protection / unprotection ( RESET# , A9 )
- Hardware method of locking a sector to prevent
any program or erase operation within that sector
- Two methods are provided :
- In-system method by RESET# pin
- A9 high-voltage method for PROM programmers
• Program and erase time
- Program time : 9us/byte, 11us/word ( typical )
- Accelerated program time : 8us/word ( typical )
- Sector erase time : 0.7sec/sector ( typical )
• Temporary Sector Unprotection ( RESET# )
- Allows temporary unprotection of previously
protected sectors to change data in-system
• Power consumption (typical values)
- 200nA in standby or automatic sleep mode
- 10 mA active read current at 5 MHz
- 15mA active write current during program or erase
ES29LV320D
Erase Suspend / Erase Resume
Data# poll and toggle for Program/erase status
CFI ( Common Flash Interface) supported
Unlock Bypass program
Autoselect mode
Auto-sleep mode after tACC + 30ns
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Excel Semiconductor inc.
GENERAL PRODUCT DESCRIPTION
Extra Security Sector of 256 bytes
The ES29LV320 is a 32 megabit, 3.0 volt-only flash
memory device, organized as 4M x 8 bits (Byte
mode) or 2M x 16 bits (Word mode) which is configurable by BYTE#. Eight boot sectors and sixty three
main sectors with uniform size are provided :
8Kbytes x 8 and 64Kbytes x 63. The device is manufactured with ESI’s proprietary, high performance
and highly reliable 0.18um CMOS flash technology.
The device can be programmed or erased in-system with standard 3.0 Volt Vcc supply ( 2.7V-3.6V)
and can also be programmed in standard EPROM
programmers. The device offers minimum endurance of 100,000 program/erase cycles and more
than 10 years of data retention.
In the device, an extra security sector of 256 bytes is
provided to customers. This extra sector can be
used for various purposes such as storing ESN
(Electronic Serial Number) or customer’s security
codes. Once after the extra sector is written, it can
be permanently locked by the device manufacturer(
factory-locked) or a customer( customer-lockable). At the same time, a lock indicator bit (DQ7)
is permanently set to a 1 if the part is factory- locked,
or set to 0 if it is customer-lockable. Therefore, this
lock indicator bit (DQ7) can be properly used to
avoid that any customer-lockable part is used to
replace a factory-locked part. The extra security
sector is an extra memory space for customers
when it is used as a customer-lockable version. So,
it can be read and written like any other sectors. But
it should be noted that the number of E/W(Erase and
Write) cycles is limited to 300 times (maximum) only
in the Security Sector.
The ES29LV320 offers access time as fast as 80ns
or 90ns, allowing operation of high-speed microprocessors without wait states. Three separate control
pins are provided to eliminate bus contention : chip
enable (CE#), write enable (WE#) and output
enable (OE#).
Special services such as ESN and factory-lock are
available to customers ( ESI’s Special-Code service ) The ES29LV320 is completely compatible with
the JEDEC standard command set of single power
supply Flash. Commands are written to the internal
command register using standard write timings of
microprocessor and data can be read out from the
cell array in the device with the same way as used in
other EPROM or flash devices.
All program and erase operation are automatically
and internally performed and controlled by embedded program/erase algorithms built in the device.
The device automatically generates and times the
necessary high-voltage pulses to be applied to the
cells, performs the verification, and counts the number of sequences. Some status bits (DQ7, DQ6 and
DQ5) read by data# polling or toggling between
consecutive read cycles provide to the users the
internal status of program/erase operation: whether
it is successfully done or still being progressed.
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PRODUCT SELECTOR GUIDE
Family Part Number
ES29LV320
Voltage Range
3.0 ~ 3.6V
2.7 ~ 3.6V
Speed Option
80R
90
120
Max Access Time (ns)
80
90
120
CE# Access (ns)
80
90
120
OE# Access (ns)
35
40
50
FUNCTION BLOCK DIAGRAM
RY/BY#
Vcc
Vcc Detector
Vss
Timer/
Counter
DQ0-DQ15(A-1)
Analog Bias
Generator
WE#
Command
Register
RESET#
Input/Output
Buffers
Write
State
Machine
Data Latch/
Sense Amps
Sector Switches
Y-Decoder
Y-Decoder
X-Decoder
Cell Array
CE#
OE#
BYTE#
ES29LV320D
Address Latch
A<0:20>
Chip Enable
Output Enable
Logic
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PIN DESCRIPTION
Pin
A0-A20
Description
21 Addresses
DQ0-DQ14
15 Data Inputs/Outputs
DQ15/A-1
DQ15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
CE#
Chip Enable
OE#
Output Enable
WE#
Write Enable
WP#/ACC
RESET#
Hardware Write Protect/Acceleration Pin
Hardware Reset Pin, Active Low
BYTE#
Selects 8-bit or 16-bit mode
RY/BY#
Ready/Busy Output
Vcc
3.0 volt-only single power supply
(see Product Selector Guide for speed options and voltage supply tolerances)
Vss
Device Ground
NC
Pin Not Connected Internally
LOGIC SYMBOL
21
16 or 8
A0 ~ A20
DQ0 ~ DQ15
(A-1)
CE#
OE#
WE#
WP#/ACC
RESET#
RY/BY#
BYTE#
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CONNECTION DIAGRAM
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
NC
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
ES29LV320D
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-Pin Standard TSOP
ES29LV320
5
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
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DEVICE BUS OPERATIONS
Several device operational modes are provided in
the ES29LV320 device. Commands are used to initiate the device operations. They are latched and
stored into internal registers with the address and
data information needed to execute the device
operation.
on the device address inputs produce valid data on
the device data outputs. The device stays at the read
mode until another operation is activated by writing
commands into the internal command register. Refer
to the AC read cycle timing diagrams for further
details ( Fig. 18 ).
The available device operational modes are listed
in Table 1 with the required inputs, controls, and the
resulting outputs. Each operational mode is
described in further detail in the following subsections.
Word/Byte Mode Configuration ( BYTE# )
The device data output can be configured by BYTE#
into one of two modes : word and byte modes. If the
BYTE# pin is set at logic ‘1’, the device is configured
in word mode, DQ0 - DQ15 are active and controlled
by CE# and OE#. If the BYTE# pin is set at logic ‘0’,
the device is configured in byte mode, and only data
I/O pins DQ0 - DQ7 are active and controlled by CE#
and OE#. The data I/O pins DQ8 - DQ14 are tristated, and the DQ15 pin is used as an input for the
LSB (A-1) address.
Read
The internal state of the device is set for the read
mode and the device is ready for reading array data
upon device power-up, or after a hardware reset. To
read the stored data from the cell array of the
device, CE# and OE# pins should be driven to VIL
while WE# pin remains at VIH. CE# is the power
control and selects the device. OE# is the output
control and gates array data to the output pins.
Standby Mode
When the device is not selected or activated in a
system, it needs to stay at the standby mode, in
which current consumption is greatly reduced with
outputs in the high impedance state.
Word or byte mode of output data is determined by
the BYTE# pin. No additional command is needed
in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses
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set-up cycle and the last cycle with the program
data and addresses. In this mode, two unlock
cycles are saved ( or bypassed ).
The device enters the CMOS standby mode when
CE# and RESET# pins are both held at Vcc+0.3V.
(Note that this is a more restricted voltage range
than VIH.) If CE# and RESET# are held at VIH, but
not within Vcc+0.3V, the device will be still in the
standby mode, but the standby current will be
greater than the CMOS standby current (0.2uA typically). When the device is in the standby mode, only
standard access time (tCE) is required for read
access, before it is ready for read data. And even if
the device is deselected by CE# pin during erase or
programming operation, the device draws active current until the operation is completely done. While the
device stays in the standby mode, the output is
placed in the high impedance state, independent of
the OE# input.
Sector Addresses
The entire memory space of cell array is divided
into a many of small sectors: 8kbytes x 8 boot sectors and 64Kbytes x 63 main sectors. In erase
operation, a single sector, multiple sectors, or the
entire device (chip erase) can be selected for
erase. The address space that each sector occupies is shown in detail in the Table 3-4.
Accelerated Program Mode
The device automatically enters a deep power-down
mode called the autosleep mode when addresses
remain stable for tACC+30ns. In this mode, current
consumption is greatly reduced ( less than 0.2uA
typical ), regardless of CE#, WE# and OE# control
signals.
The device offers accelerated program operations
through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function
is primarily intended to allow faster manufacturing
throughput at the factory. If the system asserts VHH
(11.5~12.5V) on this pin, the device automatically
enters the previously mentioned Unlock Bypass
mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to
reduce the time required for program operations.
Only two-cycle program command sequences are
required because the unlock bypass mode is automatically activated in this acceleration mode. The
device returns to the normal operation when VHH is
removed from the WP#/ACC pin. It should be
noted that the WP#/ACC pin must not be at VHH for
operations other than accelerated programming, or
device damage may result. In addition, the WP#/
ACC pin must not be left floating or unconnected;
inconsistent or undesired behavior of the device
may result.
Writing Commands
Autoselect Mode
To write a command or command sequences to initiate some operations such as program or erase, the
system must drive WE# and CE# to VIL, and OE# to
VIH. For program operations, the BYTE# pin determines whether the device accepts program data in
bytes or words. Refer to “BYTE# timings for Write
Operations” in the Fig. 21 for more information.
Flash memories are intended for use in applications where the local CPU alters memory contents.
In such applications, manufacturer and device
identification (ID) codes must be accessible while
the device resides in the target system ( the so
called “in-system program”). On the other hand,
signature codes have been typically accessed by
raising A9 pin to a high voltage in PROM programmers. However, multiplexing high voltage onto
address lines is not the generally desired system
design practice. Therefore, in the ES29LV320
device an autoselect command is provided to
allow the system to access the signature codes
without any high voltage. The conventional A9
high-voltage method used in the PROM programers for signature codes are still supported in this
device.
The device can enter the deep power-down mode
where current consumption is greatly reduced down
to less than 0.2uA typically by the following three
ways:
- CMOS standby ( CE#, RESET# = Vcc + 0.3V )
- During the device reset ( RESET# = Vss + 0.3V )
- In Autosleep Mode ( after tACC + 30ns )
Refer to the CMOS DC characteristics Table11 for
further current specification.
Autosleep Mode
Unlock Bypass Mode
To reduce more the programming time, an unlockbypass mode is provided. Once the device enters
this mode, only two write cycles are required to initiate the programming operation instead of four
cycles in the normal program command sequences
which are composed of two unlock cycles, program
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If the system writes the autoselect command
sequence, the device enters the Autoselect mode.
The system can then read some useful codes such
as manufacturer and device ID from the internal registers on DQ7 - DQ0. Standard read cycle timings
apply in this mode. In the Autoselect mode, the following four informations can be accessed through
either autoselect command method or A9 high-voltage autoselect method. Refer to the Table 2.
Flash memory, enabling the system to read the
boot-up firmware from the Flash memory.Refer to
the AC Characteristics tables for RESET# parameters and to Fig. 19 for the timing diagram.
SECTOR GROUP PROTECTION
The ES29LV320 features hardware sector group
protection. A sector group consists of two or more
adjacent sectors that are protected or unprotected
at the same time. In the device, sector protection is
performed on the group of sectors previously
defined in the Table 3-4. Once after a group of sectors are protected, any program or erase operation
is not allowed in the protected sector group. The
previously protected sectors must be unprotected
by one of the unprotect methods provided here
before changing data in those sectors. Sector protection can be implemented via two methods.
- Manufacturer ID
- Device ID
- Security Sector Lock-indicator
- Sector protection verify
Hardware Device Reset ( RESET# )
The RESET# pin provides a hardware method of
resetting the device to read array data. When the
RESET# pin is driven low for at least a period of tRP ,
the device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the
RESET# pulse The device also resets the internal
state machine to reading array data. The operation
that was interrupted should be reinitiated once after
the device is ready to accept another command
sequence, to ensure data integrity.
- In-system protection
- A9 High-voltage protection
To check whether the sector group protection was
successfully executed or not, another operation
called “protect verification” needs to be performed after the protection operation on a group of
sectors. All protection and protect verifications provided in the device are summarized in detail at the
Table 1.
CMOS Standby during Device Reset
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at Vss + 0.3V, the
device draws the greatly reduced CMOS standby
current ( ICC4 ). If RESET# is held at VIL but not
within Vss+0.3V, the standby current will be greater.
In-System Protection
“In-system protection”, the primary method,
requires VID (11.5V~12.5V) on the RESET# with
A6=0, A1=1, and A0=0. This method can be implemented either in-system or via programming equipment. This method uses standard microprocessor
bus cycle timing. Refer to Fig. 29 for timing diagram
and Fig. 3 for the protection algorithm.
RY/BY# and Terminating Operations
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains a “0” (busy) until
the internal reset operation is completed, which
requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to
determine whether the reset operation is completed.
If RESET# is asserted when a program or erase
operation is not executing (RY/BY# pin is “1”), the
reset operation is completed within a time of tREADY
(not during Embedded Algorithms). The system can
read data after the RESET# pin returns to VIH, which
requires a time of tRH.
A9 High-Voltage Protection
“High-voltage protection”, the alternate method
intended only for programming equipment, must
force VID (11.5~12.5V) on address pin A9 and control pin OE# with A6=0, A1=1 and A0=0. Refer to
Fig. 31 for timing diagram and Fig. 5 for the protection algorithm.
SECTOR UNPROTECTION
The previously protected sectors must be unprotected before modifying any data in the sectors.
The sector unprotection algorithm unprotects all
sectors in parallel. All unprotected sectors must first
RESET# tied to the System Reset
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the
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be protected prior to the first sector unprotection
write cycle to avoid any over-erase due to the intrinsic erase characteristics of the protection cell. After
the unprotection operation, all previously protected
sectors will need to be individually re-protected.
Standard microprocessor bus cycle timings are used
in the unprotection and unprotect verification operations. Three unprotect methods are provided in the
ES29LV320 device. All unprotection and unprotect
verification cycles are summarized in detail at the
Table 1.
If the system asserts VIL on the WP#/ACC pin, the
device disables program and erase functions in the
two “outermost” 8Kbytes boot sectors independently of whether those sectors were protected or
unprotected using the method described in “Sector
Group Protection and Unprotection”. The two outermost of 8 Kbyte boot sectors are the two sectors
containing the lowest addresses in a bottom-bootconfigured device, or the two sectors containing the
highest addresses in a top-boot-configured device.
If the system asserts VIH on the WP#/ACC pin, the
device reverts to whether the two outermost 8
Kbyte boot sectors were last set to be protected or
unprotected. That is, sector protection or unprotection for these two sectors depends on whether they
were last protected or unprotected using the
method described in “Sector Group Protection and
Unprotection”.
- In-system unprotection
- A9 High-voltage unprotection
- Temporary sector unprotection
In-System Unprotection
“In-system unprotection”, the primary method,
requires VID (11.5V~12.5V) on the RESET# with
A6=1, A1=1, and A0=0. This method can be implemented either in-system or via programming equipment. This method uses standard microprocessor
bus cycle timing. Refer to Fig. 29 for timing diagram
and Fig. 4 for the unprotection algorithm.
Note that the WP#/ACC pin must not be left floating
or unconnected; inconsistent behavior of the device
may result.
A9 High-Voltage Unprotection
START
“High-voltage unprotection”, the alternate method
intended only for programming equipment, must
force VID (11.5~12.5V) on address pin A9 and control pin OE# with A6=1, A1=1 and A0=0. Refer to
Fig. 32 for timing diagram and Fig. 6 for the unprotection algorithm.
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting
the RESET# pin to VID (11.5V-12.5V). During this
mode, formerly protected sectors can be programmed or erased by selecting the sector
addresses. Once VID is removed from the RESET#
pin, all the previously protected sectors are protected again. Fig. 1 shows the algorithm, and Fig. 27
shows the timing diagrams for this feature.
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors are unprotected (If WP#/ACC = VIL,
outermost boot sectors will remain protected).
2. All previously protected sectors are protected once again.
WRITE PROTECT ( WP# )
The Write Protect function provides a hardware
method of protecting certain boot sectors without
using VID. This function is one of two provided by the
WP#/ACC pin.
ES29LV320D
Figure 1. Temporary Sector Unprotect
Operation
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- A random, secure ESN (16 bytes ) only
- Customer code through the ESI’s Special-Code
service
- Both a random, secure ESN and customer
code through the ESI’s Special-Code service.
SECURITY SECTOR
The security sector of the ES29LV320 device provides an extra flash memory space that enables
permanent part identification through an Electronic
Serial Number (ESN). The security sector uses a
security lock-Indicator Bit (DQ7) to indicate
whether or not the security sector is locked when
shipped from the factory. This bit is permanently set
at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures
the security of the ESN once the product is shipped
to the field. Note that the ES29LV320 has a security
sector size of 256 bytes.
ESN ( Electronic Serial Number )
In devices that have an ESN, a Bottom Boot device
will have the 16-byte (8-word) ESN in sector 0 at
addresses 000000h-00000Fh in byte mode (or
000000h-000007h in word mode). In the Top Boot
device the ESN will be in sector 70 at addresses
3FFF00h-3FFF0Fh in byte mode (or 1FFF80h1FFF87h in word mode). Note that in upcoming top
boot versions of this device, the ESN will be located
in sector 70 at addresses 3FFF00h-3FFF0Fh in byte
mode (or 1FFF80h-1FFF87h in word mode).
Security Lock-Indicator Bit (DQ7)
In the device, the security sector can be provided in
either factory locked version or customer lockable
version. The factory-locked version is always protected when shipped from the factory, and has the
security lock-Indicator Bit permanently set to a “1”.
The customer-lockable version is shipped with
the security sector unprotected, allowing customers
to utilize the sector in any manner they choose. The
customer-lockable version has the security lockIndicator Bit permanently set to a “0”. Thus, the
security lock-Indicator Bit prevents customer-lockable devices from being used to replace devices
that are factory locked.
ESI’s Special-Code Service
Customers may opt to have their code programmed
by ESI through the ESI’s Special-Code service. ESI
programs the customer’s code, with or without the
random ESN. The devices are then shipped from
ESI’s factory with the Security Sector permanently
locked. Contact an ESI representative for details on
using ESI’s Special-Code service.
Customer-Lockable Device
The customer lockable version allows the security
sector to be freely programmed or erased and then
permanently locked. Note that the ES29LV320 has
a security sector size of 256 bytes (128 words). Note
that the accelerated programming (ACC) and unlock
bypass functions are not available when programming the security sector.
Access to the Security Sector
The security sector can be accessed through a
command sequence: Enter security and Exit
security sector commands. After the system has
written the Enter security sector command
sequence, it may read the security sector by using
the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit security sector command
sequence, or until power is removed from the
device. On power-up, or following a hardware reset,
the device returns to read mode in which the normal boot sectors can be accessed, instead of the
security sector.
Protection of the Security Sector
The security sector area can be protected using the
following procedures: Write the three-cycle “Enter
security sector command” sequence, and then following the in-system sector protect algorithm as
shown in Fig. 2, except that RESET# may be at
either VIH or VID. This allows in-system protection
of the security sector without raising any device pin
to a high voltage. Note that this method is only applicable to the security sector. To verify the protect/
unprotect status of the security sector. follow the
algorithm shown in Fig. 2.
Factory-Locked Device
In a factory-locked device, the security sector is
protected when the device is shipped from the factory. The security sector cannot be modified in any
way. The device is available preprogrammed with
one of the following:
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can only occur after successful completion of specific command sequences. And several features are
incorporated to prevent inadvertent write cycles
resulting from Vcc power-up and power-down transition or system noise.
Start
RESET# =
VIH or VID
If data=00h, security
sector is unprotected.
If data=01h, security
sector is protected
Low Vcc Write inhibit
When Vcc is less than VLKO, the device does not
accept any write cycles. This protects data during
Vcc power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode.
Subsequent writes are ignored until Vcc is greater
than VLKO. The system must provide proper signals
to the control pins to prevent unintentional writes
when Vcc is greater than VLKO.
Wait 1us
Remove VIH or VID
from RESET#
Write 60h to
any address
Write reset
command
Write 40h to security
sector address with
A6=0, A1=1,A0=0
Security sector
Protect Verify
complete
Write Pulse “Glitch” Protection
Read from security
sector address with
A6=0,A1=1,A0=0
Noise pulses of less than 5ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical inhibit
Write cycles are inhibited by holding any one of
OE#=VIL, CE#=VIH or WE#=VIH. To initiate a write
cycle, CE# and WE# must be a logical zero while
OE# is a logical one.
Figure 2. Security Sector Protect Verify
Exit from the Security Sector
Power-up Write Inhibit
Once the Security Sector is locked protected and
verified, the system must write the Exit Security
Sector Region command sequence to return to
reading and writing the remainder of the array.
If WE#=CE#=VIL and OE#=VIH during power up, the
device does not accept any commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
Caution for the Security Sector Protection
The security sector protection must be used with
caution since, once protected, there is no procedure available for unprotecting the security sector
area and none of the bits in the security sector
memory space can be modified in any way.
HARDWARE DATA PROTECTION
The ES29LV320 device provides some protection
measures against accidental erasure or programming caused by spurious system level signals that
may exist during power transition. During powerup, all internal registers and latches in the device
are cleared and the device automatically resets to
the read mode. In addition, with its internal state
machine built-in the device, any alteration of the
memory contents or any initiation of new operation
ES29LV320D
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Rev. 2D Jan 5, 2006
EE SS II
Excel Semiconductor inc.
Table 1. ES29LV320 Device Bus Operations
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Note 1)
DQ0
~
DQ7
Read
L
L
H
H
L/H
AIN
DOUT
DOUT
Write
L
H
L
H
(Note 3)
AIN
(Note 4)
(Note 4)
Accelerated Program
L
H
L
H
VHH
AIN
(Note 4)
(Note 4)
Vcc+
0.3V
X
X
Vcc+
0.3V
H
X
High-Z
High-Z
L
H
H
H
L/H
X
High-Z
High-Z
X
X
X
L
L/H
X
High-Z
High-Z
L
H
L
VID
L/H
SA,A6=L,
A1=H,A0=L
(Note 4)
X
X
Sector Unprotect
(Note 2)
L
H
L
VID
L/H
(Note 3)
SA,A6=H,
A1=H,A0=L
(Note 4)
X
X
Temporary Sector Unprotect
X
X
X
VID
H
(Note 3)
AIN
(Note 4)
(Note 4)
High-Z
Sector protect
L
VID
L
H
H
(Note 3)
SA,A9=VID,
A6=L,
A1=H,A0=L
(Note 4)
(Note 4)
High-Z
H
H
(Note 3)
SA,A9=VID,
A6=H,
A1=H,A0=L
Operation
Standby
DQ8~DQ15
BYTE#
= VIH
BYTE#
= VIL
DQ8~DQ14 = High-Z,
DQ15 = A-1
High-Z
Output Disable
Reset
Sector Protect
(Note 2)
In-system
A9 High-Voltage Method
Sector unprotect
VID
L
L
Legend: L=Logic Low=VIL, H=Logic High=VIH, VID=11.5-12.5V, VHH=11.5-12.5V, X=Don’t Care, SA=Sector Address,
AIN=Address In, DIN=Data In, DOUT=Data Out
Notes:
1. Addresses are A20:A0 in word mode (BYTE#=VIH) , A20:A-1 in byte mode (BYTE#=VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
3. If WP#/ACC=VIL, the two outermost boot sectors remain protected. If WP#/ACC=VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC=VHH, all sectors will be unprotected.
4. DIN or DOUT as required by command sequence, data polling, or sector protection algorithm.
Table 2. Autoselect Codes (A9 High-Voltage Method)
Description
CE# OE# WE#
A20
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8~DQ15
BYTE# BYTE#
= VIH
= VIL
DQ7~DQ0
ManufactureID:ESI
L
L
H
X
X
VID
X
L
X
L
L
X
X
4Ah
Device ID:
ES29LV320
L
L
H
X
X
VID
X
L
X
L
H
22h
X
F6(T),F9h(B)
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
X
H
L
X
X
01h(protected)
00h(unprotected)
L
L
H
X
X
VID
X
L
X
H
H
X
X
99h(factory-locked),
19h(customer-lockable)
Security Sector
Indicator Bit(DQ7)
Legend: T= Top Boot Block, B = Bottom Boot Block, L=Logic Low=VIL, H=Logic High=VIH, SA=Sector Address, X = Don’t care
ES29LV320D
12
Rev. 2D Jan 5, 2006
EE SS II
Excel Semiconductor inc.
Table 3. Top Boot Sector Addresses (ES29LV320DT)
Group
SG0
SG1
SG2
SG3
SG4
SG5
SG6
SG7
SG8
SG9
SG10
SG11
SG12
SG13
Sector
Sector address
A20~A12
Sector Size
(Kbytes/Kwords)
(X8)
Address Range
(X16)
Address Range
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
SA39
SA40
SA41
SA42
SA43
SA44
SA45
SA46
SA47
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SA55
000000XXX
000001XXX
000010XXX
000011XXX
000100XXX
000101XXX
000110XXX
000111XXX
001000XXX
001001XXX
001010XXX
001011XXX
001100XXX
001101XXX
001110XXX
001111XXX
010000XXX
010001XXX
010010XXX
010011XXX
010100XXX
010101XXX
010110XXX
010111XXX
011000XXX
011001XXX
011010XXX
011011XXX
011100XXX
011101XXX
011110XXX
011111XXX
100000XXX
100001XXX
100010XXX
100011XXX
100100XXX
100101XXX
100110XXX
100111XXX
101000XXX
101001XXX
101010XXX
101011XXX
101100XXX
101101XXX
101110XXX
101111XXX
110000XXX
110001XXX
110010XXX
110011XXX
110100XXX
110101XXX
110110XXX
110111XXX
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
000000h~00FFFFh
010000h~01FFFFh
020000h~02FFFFh
030000h~03FFFFh
040000h~04FFFFh
050000h~05FFFFh
060000h~06FFFFh
070000h~07FFFFh
080000h~08FFFFh
090000h~09FFFFh
0A0000h~0AFFFFh
0B0000h~0BFFFFh
0C0000h~0CFFFFh
0D0000h~0DFFFFh
0E0000h~0EFFFFh
0F0000h~0FFFFFh
100000h~10FFFFh
110000h~11FFFFh
120000h~12FFFFh
130000h~13FFFFh
140000h~14FFFFh
150000h~15FFFFh
160000h~16FFFFh
170000h~17FFFFh
180000h~18FFFFh
190000h~19FFFFh
1A0000h~1AFFFFh
1B0000h~1BFFFFh
1C0000h~1CFFFFh
1D0000h~1DFFFFh
1E0000h~1EFFFFh
1F0000h~1FFFFFh
200000h~20FFFFh
210000h~21FFFFh
220000h~22FFFFh
230000h~23FFFFh
240000h~24FFFFh
250000h~25FFFFh
260000h~26FFFFh
270000h~27FFFFh
280000h~28FFFFh
290000h~29FFFFh
2A0000h~2AFFFFh
2B0000h~2BFFFFh
2C0000h~2CFFFFh
2D0000h~2DFFFFh
2E0000h~2EFFFFh
2F0000h~2FFFFFh
300000h~30FFFFh
310000h~31FFFFh
320000h~32FFFFh
330000h~33FFFFh
340000h~34FFFFh
350000h~35FFFFh
360000h~36FFFFh
370000h~37FFFFh
000000h~07FFFh
008000h~0FFFFh
010000h~17FFFh
018000h~01FFFFh
020000h~027FFFh
028000h~02FFFFh
030000h~037FFFh
038000h~03FFFFh
040000h~047FFFh
048000h~04FFFFh
050000h~057FFFh
058000h~05FFFFh
060000h~067FFFh
068000h~06FFFFh
070000h~077FFFh
078000h~07FFFFh
080000h~087FFFh
088000h~08FFFFh
090000h~097FFFh
098000h~09FFFFh
0A0000h~0A7FFFh
0A8000h~0AFFFFh
0B0000h~0B7FFFh
0B8000h~0BFFFFh
0C0000h~0C7FFFh
0C8000h~0CFFFFh
0D0000h~0D7FFFh
0D8000h~0DFFFFh
0E0000h~0E7FFFh
0E8000h~0EFFFFh
0F0000h~0F7FFFh
0F8000h~0FFFFFh
100000h~107FFFh
108000h~10FFFFh
110000h~117FFFh
118000h~11FFFFh
120000h~127FFFh
128000h~12FFFFh
130000h~137FFFh
138000h~13FFFFh
140000h~147FFFh
148000h~14FFFFh
150000h~157FFFh
158000h~15FFFFh
160000h~167FFFh
168000h~16FFFFh
170000h~177FFFh
178000h~17FFFFh
180000h~187FFFh
188000h~18FFFFh
190000h~197FFFh
198000h~19FFFFh
1A0000h~1A7FFFh
1A8000h~1AFFFFh
1B0000h~1B7FFFh
1B8000h~1BFFFFh
ES29LV320D
13
Remark
Main
Sector
Rev. 2D Jan 5, 2006
EE SS II
Excel Semiconductor inc.
Table 3. Top Boot Sector Addresses (ES29LV320DT) Continued
Group
SG14
SG15
SG16
SG17
SG18
SG19
SG20
SG21
SG22
SG23
Sector
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
Security Sector
Sector address
A20~A12
111000XXX
111001XXX
111010XXX
111011XXX
111100XXX
111101XXX
111110XXX
111111000
111111001
111111010
111111011
111111100
111111101
111111110
111111111
Sector Size
(Kbytes/Kwords)
64/32
64/32
64/32
64/32
64/32
64/32
64/32
8/4
8/4
8/4
8/4
8/4
8/4
8/4
8/4
(X8)
Address Range
380000h~38FFFFh
390000h~39FFFFh
3A0000h~3AFFFFh
3B0000h~3BFFFFh
3C0000h~3CFFFFh
3D0000h~3DFFFFh
3E0000h~3EFFFFh
3F0000h~3F1FFFh
3F2000h~3F3FFFh
3F4000h~3F5FFFh
3F6000h~3F7FFFh
3F8000h~3F9FFFh
3FA000h~3FBFFFh
3FC000h~3FDFFFh
3FE000h~3FFFFFh
(X16)
Address Range
1C0000h~1C7FFFh
1C8000h~1CFFFFh
1D0000h~1D7FFFh
1D8000h~1DFFFFh
1E0000h~1E7FFFh
1E8000h~1EFFFFh
1F0000h~1F7FFFh
1F8000h~1F8FFFh
1F9000h~1F9FFFh
1FA000h~1FAFFFh
1FB000h~1FBFFFh
1FC000h~1FCFFFh
1FD000h~1FDFFFh
1FE000h~1FEFFFh
1FF000h~1FFFFFh
111111111
bytes/words
(256/128)
3FFF00h~3FFFFFh
1FFF80h~1FFFFFh
Remark
Main
Sector
Boot
Sector
SA69,SA70
protected
at WP#/
ACC=low
Note:
The addresses range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH).
ES29LV320D
14
Rev. 2D Jan 5, 2006
EE SS II
Excel Semiconductor inc.
Table 4. Bottom Boot Sector Addresses (ES29LV320DB)
Group
Sector
SG0
SG1
SG2
SG3
SG4
SG5
SG6
SG7
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
SA39
SA40
SA41
SA42
SA43
SA44
SA45
SA46
SA47
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SG8
SG9
SG10
SG11
SG12
SG13
SG14
SG15
SG16
SG17
SG18
SG19
ES29LV320D
Sector address
A20~A12
000000000
000000001
000000010
000000011
000000100
000000101
000000110
000000111
000001XXX
000010XXX
000011XXX
000100XXX
000101XXX
000110XXX
000111XXX
001000XXX
001001XXX
001010XXX
001011XXX
001100XXX
001101XXX
001110XXX
001111XXX
010000XXX
010001XXX
010010XXX
010011XXX
010100XXX
010101XXX
010110XXX
010111XXX
011000XXX
011001XXX
011010XXX
011011XXX
011100XXX
011101XXX
011110XXX
011111XXX
100000XXX
100001XXX
100010XXX
100011XXX
100100XXX
100101XXX
100110XXX
100111XXX
101000XXX
101001XXX
101010XXX
101011XXX
101100XXX
101101XXX
101110XXX
101111XXX
Sector Size
(Kbytes/Kwords)
8/4
8/4
8/4
8/4
8/4
8/4
8/4
8/4
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
(X8)
Address Range
000000h~001FFFh
002000h~003FFFh
004000h~005FFFh
006000h~007FFFh
008000h~009FFFh
00A000h~00BFFFh
00C000h~00DFFFh
00E000h~00FFFFh
010000h~01FFFFh
020000h~02FFFFh
030000h~03FFFFh
040000h~04FFFFh
050000h~05FFFFh
060000h~06FFFFh
070000h~07FFFFh
080000h~08FFFFh
090000h~09FFFFh
0A0000h~0AFFFFh
0B0000h~0BFFFFh
0C0000h~0CFFFFh
0D0000h~0DFFFFh
0E0000h~0EFFFFh
0F0000h~0FFFFFh
100000h~10FFFFh
110000h~11FFFFh
120000h~12FFFFh
130000h~13FFFFh
140000h~14FFFFh
150000h~15FFFFh
160000h~16FFFFh
170000h~17FFFFh
180000h~18FFFFh
190000h~19FFFFh
1A0000h~1AFFFFh
1B0000h~1BFFFFh
1C0000h~1CFFFFh
1D0000h~1DFFFFh
1E0000h~1EFFFFh
1F0000h~1FFFFFh
200000h~20FFFFh
210000h~21FFFFh
220000h~22FFFFh
230000h~23FFFFh
240000h~24FFFFh
250000h~25FFFFh
260000h~26FFFFh
270000h~27FFFFh
280000h~28FFFFh
290000h~29FFFFh
2A0000h~2AFFFFh
2B0000h~2BFFFFh
2C0000h~2CFFFFh
2D0000h~2DFFFFh
2E0000h~2EFFFFh
2F0000h~2FFFFFh
15
(X16)
Address Range
000000h~000FFFh
001000h~001FFFh
002000h~002FFFh
003000h~003FFFh
004000h~004FFFh
005000h~005FFFh
006000h~006FFFh
007000h~007FFFh
008000h~00FFFFh
010000h~017FFFh
018000h~01FFFFh
020000h~027FFFh
028000h~02FFFFh
030000h~037FFFh
038000h~03FFFFh
040000h~047FFFh
048000h~04FFFFh
050000h~057FFFh
058000h~05FFFFh
060000h~067FFFh
068000h~06FFFFh
070000h~077FFFh
078000h~07FFFFh
080000h~087FFFh
088000h~08FFFFh
090000h~097FFFh
098000h~09FFFFh
0A0000h~0A7FFFh
0A8000h~0AFFFFh
0B0000h~0B7FFFh
0B8000h~0BFFFFh
0C0000h~0C7FFFh
0C8000h~0CFFFFh
0D0000h~0D7FFFh
0D8000h~0DFFFFh
0E0000h~0E7FFFh
0E8000h~0EFFFFh
0F0000h~0F7FFFh
0F8000h~0FFFFFh
100000h~107FFFh
108000h~10FFFFh
110000h~117FFFh
118000h~11FFFFh
120000h~127FFFh
128000h~12FFFFh
130000h~137FFFh
138000h~13FFFFh
140000h~147FFFh
148000h~14FFFFh
150000h~157FFFh
158000h~15FFFFh
160000h~167FFFh
168000h~16FFFFh
170000h~177FFFh
178000h~17FFFFh
Remark
Boot
Sector
SA0,SA1
protected
at WP#/
ACC=low
Main
Sector
Rev. 2D Jan 5, 2006
EE SS II
Excel Semiconductor inc.
Table 4. Bottom Boot Sector Addresses (ES29LV320DB) Continued
Group
SG20
SG21
SG22
SG23
Sector
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
Security Sector
Sector address
A20~A12
110000XXX
110001XXX
110010XXX
110011XXX
110100XXX
110101XXX
110110XXX
110111XXX
111000XXX
111001XXX
111010XXX
111011XXX
111100XXX
111101XXX
111110XXX
111111XXX
Sector Size
(Kbytes/Kwords)
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
(X8)
Address Range
300000h~30FFFFh
310000h~31FFFFh
320000h~32FFFFh
330000h~33FFFFh
340000h~34FFFFh
350000h~35FFFFh
360000h~36FFFFh
370000h~37FFFFh
380000h~38FFFFh
390000h~39FFFFh
3A0000h~3AFFFFh
3B0000h~3BFFFFh
3C0000h~3CFFFFh
3D0000h~3DFFFFh
3E0000h~3EFFFFh
3F0000h~3FFFFFh
(X16)
Address Range
180000h~187FFFh
188000h~18FFFFh
190000h~197FFFh
198000h~19FFFFh
1A0000h~1A7FFFh
1A8000h~1AFFFFh
1B0000h~1B7FFFh
1B8000h~1BFFFFh
1C0000h~1C7FFFh
1C8000h~1CFFFFh
1D0000h~1D7FFFh
1D8000h~1DFFFFh
1E0000h~1E7FFFh
1E8000h~1EFFFFh
1F0000h~1F7FFFh
1F8000h~1FFFFFh
000000000
bytes/words
(256/128)
000000h~0000FFh
000000h~00007Fh
Remark
Main
Sector
Note:
The addresses range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH).
ES29LV320D
16
Rev. 2D Jan 5, 2006
EE SS II
Excel Semiconductor inc.
In-System Protection / Unprotection Method
START
START
Protect all sectors:
The indicated portion of the sector
protect algorithm
must be performed
for all unprotected
sectors prior to
issuing the first
sector unprotect
address
COUNT = 1
RESET# = VID
Wait 1us
Temporary Sector
Unprotect Mode
No
First Write
Cycle = 60h?
COUNT = 1
RESET# = VID
Wait 1us
First Write
Cycle = 60h?
Yes
Temporary Sector
Unprotect Mode
Yes
Set up sector
address
No
Sector Protect:
Write 60h to sector address with
A6 = 0, A1 = 1,
A0 = 0
All sectors
protected ?
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector address with
A6 = 1, A1 = 1,
Wait 150us
Verify Sector
Protect:
Write 40h to sector address with
A6 = 0, A1 = 1,
A0 = 0
Increment
COUNT
No
Wait 15ms
Reset
COUNT = 1
Read from sector address with
A6 = 0, A1 = 1,
A0 = 0
Verify Sector
Unprotect:
Write 40h to sector address with
A6 = 1, A1 = 1,
A0 = 0
Increment
COUNT
Set up next
sector address
No
Read from sector address with
A6 = 1, A1 = 1,
A0 = 0
No
COUNT=25?
Yes
Data = 01h?
No
Yes
No
Device failed
Protect another
sector?
Yes
No
Remove VID
from RESET#
COUNT
=1000?
Data = 00h?
Yes
Yes
Device failed
Last sector
verified?
No
Yes
Write reset
command
Remove VID from
RESET#
Sector Protect
complete
Write reset
command
Sector Unprotect
complete
Figure 4. In-System Sector
Unprotect Algorithm
Figure 3. In-System Sector
Protect Algorithm
ES29LV320D
17
Rev. 2D Jan 5, 2006
EE SS II
Excel Semiconductor inc.
A9 High-Voltage Method
Start
Note: All sectors must be
previously protected.
Start
COUNT = 1
COUNT = 1
SET A9=OE#=VID
SET A9=OE#=VID
CE#, A0=VIL ,
RESET#,
A6, A1=VIH
Set Sector Address
A<20 :12>
CE#, A6, A0=VIL
RESET#, A1=VIH
SET WE# = VIL
SET WE# = VIL
Wait 15ms
Wait 150 us
SET WE# = VIH
SET WE# = VIH
Increase COUNT
Increase COUNT
CE#,OE#, A0=VIL
RESET#, A6, A1=VIH
CE#,OE#,A6,A0=VIL
RESET#, A1 = VIH
Set Sector AddressA<20 :12>
Read Data
No
Read Data
No
No
COUNT= 25?
Data = 01h?
No
COUNT=1000?
Yes
Data = 00h?
Increase Sector
Address
Yes
Yes
Device failed
Yes
Yes
Protect Another
Sector ?
Device failed
No
The Last Sector
Address ?
No
Remove VID from
A9 and Write
Reset Command
Yes
Remove VID from A9 and
Write Reset Command
Sector Protection
Complete
Sector Unprotection
Complete
Figure 6. Sector Un-Protection Algorithm
(A9 High-Voltage Method)
Figure 5. Sector Protection Algorithm
(A9 High-Voltage Method)
ES29LV320D
18
Rev. 2D Jan 5, 2006
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This device enters the CFI Query mode when the
system writes the CFI query command, 98h, to
address 55h in word mode (or address AAh in byte
mode), any time the device is ready to read array
data. The system can read CFI information at the
addresses given in Tables 5-8. To terminate reading
CFI data, the system must write the reset command.The CFI query command can be written to the
system when the device is in the autoselect mode
or the erase-suspend-read mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 5-8.
When the reset command is written, the device
returns respectively to the read mode or erase-suspend-read mode.
Common Flash Memory
Interface (CFI)
CFI is supported in the ES29LV320 device. The
Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing interfaces for long-term compatibility.
Table 5. CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set(00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Description
Table 6. System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
Vcc Min. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1Ch
38h
0036h
Vcc Max. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1Dh
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2N us
20h
40h
0000h
Typical timeout for Min. size buffer write 2N us (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
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Table 7. Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0016h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description
02 = x8, x16 Asynchronous
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of bytes multi-byte write = 2N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
5Ah
5Ch
0007h
0000h
Erase Block Region 1 Information
Number of identical size erase block = 0007h+1 =8
2Fh
30h
5Eh
60h
0020h
0000h
Erase Block Region 1 Information
Number of identical size erase block = 0020h * 256byte = 8Kbyte
31h
32h
62h
64h
003Eh
0000h
Erase Block Region 2 Information
Number of identical size erase block = 003Eh+1 =63
33h
34h
66h
68h
0000h
0001h
Erase Block Region 2Information
Number of identical size erase block = 0100h * 256byte = 64Kbyte
35h
36h
6Ah
6Ch
0000h
0000h
Erase Block Region 3 Information
37h
38h
6Eh
70h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
72h
74h
0000h
0000h
Erase Block Region 4 Information
3Bh
3Ch
76h
78h
0000h
0000h
Erase Block Region 4 Information
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Table 8. Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0031h
Minor version number, ASCII
45h
8Ah
0000h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not required
Silicon Revision Number (Bits 7-2)
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0004h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
04 = In-System Method and A9 High-Voltage Method
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00B5h
ACC(Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100mV
4Eh
9Ch
00C5h
ACC(Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100mV
4Fh
9Eh
000Xh
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
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COMMAND DEFINITIONS
the Device Bus Operations section for more information.The Read-Only Operations table provides the
read parameters, and Fig. 18 shows the timing diagram
Writing specific address and data commands or
sequences into the command register initiates
device operations. Table 9 defines the valid register
command sequences. Note that writing incorrect
address and data values or writing them in the
improper sequence may place the device in an
unknown state. A reset command is required to
return the device to normal operation.
RESET COMMAND
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched
on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for
timing diagrams.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the device to
which the system was writing to the read mode.
Once erasure begins, however, the device ignores
reset commands until the operation is complete.
READING ARRAY DATA
The device is automatically set to reading array data
after device power-up. No commands are required
to retrieve data. The device is ready to read array
data after completing an Embedded Program or
Embedded Erase algorithm.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device
to which the system was writing to the read mode. If
the program command sequence is written to a sector that is in the Erase Suspend mode, writing the
reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the
operation is complete.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read
mode, after which the system can read data from
any non-erase-suspended sector. After completing a
programming operation in the Erase Suspend mode,
the system may once again read array data with the
same exception. See the Erase Suspend/Erase
Resume Commands section for more information.
The reset command may be written between the
sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset
command must be written to return to the read
mode. If the device entered the autoselect mode
while in the Erase Suspend mode, writing the reset
command returns the device to the erase-suspendread mode.
The system must issue the reset command to return
the device to the read (or erase-suspend-read)
mode if DQ5 goes high during an active program or
erase operation, or if the device is in the autoselect
mode. See the next section, Reset Command, for
more information.
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to
the read mode (or erase-suspend-read mode if the
device was in Erase-Suspend).
See also Requirements for Reading Array Data in
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Command Definitions
Table 9. ES29LV320 Command Definitions
Read (Note 6)
Reset (Note 7)
Autoselect (Note 8)
Manufacturer ID
Device ID
Word
Byte
Word
Byte
Security Sector Fac
tory Protect (Note 9)
Word
Sector Protect Verify
(Note 10)
Word
Enter Security Sector Region
Exit Security Sector Region
Program
Unlock Bypass
Byte
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Bus Cycles (Notes 2~5)
Cycles
Command
Sequence
(Note 1)
First
Addr
Data
1
RA
RD
1
XXX
F0
4
4
4
4
3
4
4
3
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
Second
AA
AA
AA
AA
AA
AA
AA
AA
Addr
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
Third
Data
PA
PD
XXX
00
Sector Erase
Word
Byte
6
555
AAA
AA
AA
Erase Suspend (Note 13)
1
XXX
B0
Erase Resume (Note 14)
1
XXX
30
CFI Query (Note 15)
Word
Byte
1
55
AA
555
2AA
555
555
AAA
555
55
90
AAA
555
AAA
55
A0
6
555
AAA
55
XXX
Byte
555
AAA
55
XXX
Chip Erase
555
AAA
55
2
2AA
555
AAA
55
2
555
AAA
55
Unlock Bypass Reset (Note 12)
Word
555
55
Unlock Bypass Program (Note 11)
Addr
AAA
555
55
AAA
555
55
AAA
Fourth
Fifth
Data
Addr
Data
90
X00
4A
X01
(See
Table 2)
90
90
90
X02
X03
X06
(SA)X02
(SA)X04
Addr
Sixth
Data
Addr
Data
99/19
00/01
88
90
XXX
00
A0
PA
PD
20
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
98
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20-A12 uniquely select any sector.
Notes:
9. The data is 99h for factory locked and 19h for not factory
locked.
10. The data is 00h for an unprotected sector and 01h for a
protected sector.
11. The Unlock Bypass command is required prior to the UnlockBypass Program command.
12. The Unlock Bypass Reset command is required to return
to the read mode when the device is in the unlock bypass
mode.
13. The system may read and program in non-erasing sectors,
or enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during
a sector erase operation.
14. The Erase Resume command is valid only during the Erase
Suspend mode.
15. Command is valid when device is ready to read array data
or when device is in autoselect mode.
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4. Data bits DQ15-DQ8 are don’t care in command sequences,
except for RD and PD
5. Unless otherwise noted, address bits A20-A11 are don’t cares.
6. No unlock or command cycles required when device is in
read mode.
7. The Reset command is required to return to the read mode
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a device is in the autoselect mode, or if DQ5
goes high (while the device is providing status information).
8. The fourth cycle of the autoselect command sequence
is a read cycle. Data bits DQ15-DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
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AUTOSELECT COMMAND
SECURITY SECTOR COMMAND
The autoselect command sequence allows the host
system to access the manufacturer and device
codes, and determine whether or not a sector is
protected, including information about factorylocked or customer lockable version.
In the ES29LV320 device, the security sector region
(256 bytes) provides a secured data area containing
a random, sixteen-byte electronic serial number(ESN) or customer’s security codes. The security sector region can be accessed by issuing the
three-cycle Enter Security Sector command
sequence. The device continues to access the
security sector region until the system issues the
four-cycle Exit Security Sector command
sequence. The Exit Security Sector command
sequence returns the device to normal operation.
Table 9 shows the address and data requirements
for both command sequences. Note that the accelerated programming function by WP#ACC and
unlock bypass mode are not available when the
device has entered the security sector. Refer to the
Fig. 7 for the security sector operation.
Identifier Code
Address
Data
Manufacturer ID
00h
4Ah
Device ID
01h
F6(T),
F9h(B)
Security Sector Factory Protect
03h
99 / 19
Sector Group Protect Verify
(SA)02h
00 / 01
Table 9 shows the address and data requirements.
This method is an alternative to “A9 high-voltage
method” shown in Table 2, which is intended for
PROM programmers and requires VID on address
pin A9. The autoselect command sequence may be
written to an address within sector that is either in
the read mode or erase-suspend-read mode. The
auto-select command may not be written while the
device is actively programming or erasing. The
autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command.
The device then enters the autoselect mode. The
system may read at any address any number of
times without initiating another autoselect command sequence.
Read Mode
Enter Security
Sector Command
Program, Erase or
Protection
Once after the device enters the auto-select mode,
the manufacture ID code ( 4Ah ) can be accessed
by one of two ways. Just one read cycle ( with A6,
A1 and A0 = 0 ) can be used. Or four consecutive
read cycles ( with A6 = 1 and A1, A0 = 0 ) for continuation codes (7Fh) and then another last cycle
for the code (4Ah) (with A6, A1 and A0 = 0) can be
used for reading the manufacturer code.
Exit Security
Sector Command
Read Mode
- 4Ah (one-cycle read)
- 7Fh 7Fh 7Fh 7Fh 4Ah (Five-cycle read)
Figure 7. Security Sector Operation
The system must write the reset command to return
to the read mode (or erase-suspend-read mode if
the device was previously in Erase Suspend).
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BYTE / WORD PROGRAM
Program Status Bits : DQ7, DQ6 or RY/BY#
The system may program the device by word or
byte, depending on the state of the BYTE# pin.
Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing
two unlock write cycles, followed by the program
set-up command. The program address and data
are written next, which in turn initiate the Embedded
Program algorithm. The system is not required to
provide further controls or timings. The device automatically provides internally generated program
pulses and verifies the programmed cell margin.
Table 9 shows the address and data requirements
for the byte program command sequence. Note that
the autoselect, commands related with the security
sector, and CFI modes are unavailable while a programming operation is in progress.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can
determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. Refer to the Write
Operation Status section Table 10 for information on
these status bits.
Any Commands Ignored during Programming Operation
Any commands written to the device during the
Embedded Program algorithm are ignored. Note that
a hardware reset can immediately terminates the
program operation. The program command
sequence should be reinitiated once the device has
returned to the read mode, to ensure data integrity.
Programming from “0” back to “1”
Programming is allowed in any sequence and
across sector boundaries. But a bit cannot be programmed from “0” back to a ”1”. Attempting to do so
may cause the device to set DQ5 = 1, or cause the
DQ7 and DQ6 status bits to indicate the operation
was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations
can convert a “0” to a “1”
START
Write Program Command Sequence
Embedded
Program
algorithm in
progress
Data Poll
from System
Unlock Bypass
In the ES29LV320 device, an unlock bypass program mode is provided for faster programming operation. In this mode, two cycles of program command
sequences can be saved. To enter this mode, an
unlock bypass enter command should be first written
to the system. The unlock bypass enter command
sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device
then enters the unlock-bypass program mode. A
two-cycle unlock bypass program command
sequence is all that is required to program in this
mode. The first cycle in this sequence contains the
unlock bypass program set-up command, A0h; the
second cycle contains the program address and
data. Additional data is programmed in the same
manner. This mode dispenses with the initial two
unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 9 shows the requirements for the
command sequence.
No
Verify Data?
Yes
No
Increment Address
Last Address?
Yes
Programming
Completed
Note: See Table 9 for program command sequence
Figure 8. Program Operation
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Table 9 shows the address and data requirements for
the chip erase command sequence. Note that the
autoselect, security sector, and CFI modes are
unavailable while an erase operation is in progress
During the unlock-bypass mode, only the unlockbypass program and unlock-bypass reset commands are valid. To exit the unlock-bypass mode,
the system must issue the two-cycle unlock-bypass
reset command sequence. The first cycle must contain the data 90h. The second cycle need to only
contain the data 00h. The device then returns to the
read mode.
Erase Status Bits : DQ7, DQ6, DQ2, or RY/BY#
When the Embedded Erase algorithm is complete,
the device returns to the read mode and addresses
are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. Refer to the Write Operation Status
section Table 10 for information on these status bits.
- Unlock Bypass Enter Command
- Unlock Bypass Reset Command
- Unlock Bypass Program Command
Unlock Bypass Program during WP#/ACC
Accelerated Program Mode
Commands Ignored during Erase Operation
The device offers accelerated program operations
through the WP#/ACC pin. When the system
asserts VHH on the WP#/ACC pin, the device automatically enters the unlock bypass mode. The system may then write the two-cycle unlock bypass
program command sequence. The device uses the
higher voltage on the WP#/ACC pin to accelerate
the operation. Note that the WP#/ACC pin must not
be at VHH in any operation other than accelerated
programming, or device damage may result. In
addition, the WP#/ACC pin must not be left floating
or unconnected; inconsistent behavior of the device
may result. Fig. 8 illustrates the algorithm for the
program operation. Refer to the Erase and Program
Operations table in the AC Characteristics section
for parameters, and Fig. 22 for timing diagrams.
Any command written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that
occurs, the chip erase command sequence should
be reinitiated once the device has returned to reading
array data. to ensure data integrity. Fig. 9 illustrates
the algorithm for the erase operation. Refer to the
Erase and Program Operations tables in the AC
Characteristics section for parameters, and Fig. 23
section for timing diagrams.
SECTOR ERASE COMMAND
By using a sector erase command, a single sector or
multiple sectors can be erased. The sector erase
command is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 9 shows the
address and data requirements for the sector erase
command sequence. Note that the autoselect, security sector, and CFI modes are unavailable while an
erase operation is in progress.
CHIP ERASE COMMAND
To erase the entire memory, a chip erase command
is used. This command is a six bus cycle operation.
The chip erase command sequence is initiated by
writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then
followed by the chip erase command, which in turn
invokes the Embedded Erase algorithm. The chip
erase command erases the entire memory including all other sectors except the protected sectors,
but the internal erase operation is performed on a
single sector base.
Embedded Sector Erase Algorithm
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically programs and verifies the entire memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings these operations.
Embedded Erase Algorithm
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the
entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any controls or timings during these operations.
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Sector Erase Time-out Window and DQ3
Status Bits : DQ7,DQ6,DQ2, or RY/BY#
After the command sequence is written, a sector
erase time-out of 50us occurs. During the time-out
period, additional sector addresses and sector
erase commands may be written. Loading the sector erase buffer may be done in any sequence, and
the number of sectors may be from one sector to all
sectors. The time between these additional cycles
must be less than 50 us, otherwise the last address
and command may not be accepted, and erasure
may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be reenabled after the last Sector Erase command is
written. The system can monitor DQ3 to determine
if the sector erase timer has timed out (See the section on DQ3:Sector Erase Timer.). The time-out
begins from the rising edge of the final WE# pulse
in the command sequence.
When the Sector Erase Embedded Erase algorithm
is complete, the device returns to reading array data
and addresses are no longer latched. Note that while
the Embedded Erase operation is in progress, the
system can read data from the non-erasing sector.
The system can determine the status of the erase
operation by reading DQ7,DQ6,DQ2, or RY/BY# in
the erasing sector. Refer to the Write Operation Status section Table 10 for information on these status
bits.
Valid Command during Sector Erase
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Any command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to the read mode. The system must rewrite
the command sequence and any additional
addresses and commands.
Fig. 9 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations
tables in the AC Characteristics section for parameters, and Fig. 23 section for timing diagrams.
ERASE SUSPEND/ERASE RESUME
An erase operation is a long-time operation so that
two useful commands are provided in the
ES29LV320 device Erase Suspend and Erase
Resume Commands. Through the two commands,
erase operation can be suspended for a while and
the suspended operation can be resumed later when
it is required. While the erase is suspended, read or
program operations can be performed by the system.
START
Write Erase
Command Sequence
(Notes 1,2)
Data Poll to
Erasing Bank
from System
Embedded
Erase
algorithm in
progress
Erase Suspend Command, (B0h)
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then
read data from, or program data to, any sector not
selected for erasure. This command is valid only during the sector erase operation, including the 50us
time-out period during the sector erase command
sequence. The Erase Suspend command is ignored
if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend
command is written during the sector erase operation, the device requires a maximum of 20us to suspend the erase operation. However, when the Erase
Suspend command is written during the sector erase
time-out, the device immediately terminates the timeout period and suspends the erase operation.
No
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 9 for erase command sequence
2. See the section on DQ3 for information on the sector erase timer
Figure 9. Erase Operation
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Read and Program during Erase-SuspendRead Mode
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The
system can read data from or program data to any
sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Reading
at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section
for information on these status bits (Table 10).
After an erase-suspended program operation is
complete, the device returns to the erase-suspendread mode. The system can determine the status for
the program operation using the DQ7 or DQ6 status
bits, just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
Autoselect during Erase-Suspend- Read
Mode
In the erase-suspend-read mode, the system can
also issue the autoselected command sequence.
Refer to the Autoselect Mode and Autoselect Command Sequence section for details (Table 9).
Erase Resume Command
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored.
Another Erase Suspend command can be written
after the chip has resumed erasing.
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COMMAND DIAGRAM
PA/PD
Program
Done
A0
20
Unlock
Bypass
90
AA
80
90
Security
Sector
88
55
AA
55
Autoselect
55
10
98
90
Chip
Erase
AA
F0
SA/30
00
SA/30
Done
CFI
Read
50us
F0
Done
00
Sector
Erase
98
Resume
30
B0
Suspend
Erasesuspend
Read
Figure 10. Command Diagram
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WRITE OPERATION STATUS
Erase algorithm is complete, or if the device enters
the Erase Suspend mode, Data# polling produces a
“1” on DQ7. The system must provide an address
within any of the sectors selected for erasure to read
valid status information on DQ7.
In the ES29LV320 device, several bits are provided
to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, DQ7 and RY/BY#.
Table 10 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a
method for determining whether a program or erase
operation is complete or in progress. The device
also provides a hardware-based output signal, RY/
BY#, to determine whether an Embedded Program
or Erase operation is in progress or has been completed.
Erase on the Protected Sectors
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 1.8us,
then the device returns to the read mode. If not all
selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a
protected sector, the status may not be valid.
DQ7 (DATA# POLLING)
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Program or Erase
algorithm is in progress or completed, or whether a
device is in Erase Suspend. Data# Polling is valid
after the rising edge of the final WE# pulse in the
command sequence.
Data# Polling Algorithm
Just prior to the completion of an Embedded
Program or Ease operation, DQ7 may change
asynchronously with DQ0-DQ6 while Output
Enable(OE#) is asserted low. That is, this device
may change from providing status information to
valid data on DQ7. Depending on when the system
samples the DQ7 output, it may read the status or
valid data. Even if the device has completed the
program or erase operation and DQ7 has valid data,
the data outputs on DQ0-DQ7 will appear on
successive read cycles.
During Programming
During the Embedded Program algorithm, the
device outputs on DQ7 the complement of the
datum programmed to DQ7. This DQ7 status also
applies to programming during Erase Suspend.
When the Embedded Program algorithm is complete, the device outputs the datum programmed to
DQ7. The system must provide the program
address to read valid status information on DQ7. If
a program address falls within a protected sector,
Data# Polling on DQ7 is active for approximately
250ns, then the device returns to the read mode.
Table 10 shows the outputs for Data# Polling on
DQ7. Fig. 11 shows the Data# Polling algorithm. Fig.
24 in the AC Characteristics section shows the
Data# Polling timing diagram.
During Erase
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded
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Erase Suspend mode. Toggle Bit I may be read at
any address, and is valid after the rising edge of the
final WE# pulse in the command sequence ( prior to
the program or erase operation), and during the sector erase time-out. During an Embedded Program or
Erase algorithm operation, successive read cycles to
any address cause DQ6 to toggle. The system may
use either OE# or CE# to control the read cycles.
When the operation is complete, DQ6 stops toggling.
START
Read DQ7-DQ0
Addr = VA
DQ7 = Data ?
Yes
No
No
DQ5 = 1 ?
The system can use DQ6 and DQ2 together to
determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in
progress), DQ6 toggles. When the device enters the
Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine
which sectors are erasing or erase-suspended.
Alternatively, the system can use DQ7(see the subsection on DQ7:Data# Polling). DQ6 also toggles
during the erase-suspend-program mode, and stops
toggling once the Embedded Program algorithm is
complete.
Yes
Read DQ7-DQ0
Addr = VA
Yes
DQ7 = Data ?
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector erase
operation, a valid address is any sector address within the
sector being erased. During chip erase, a valid address in
any non-protected sector address.
Table 10 shows the outputs for Toggle Bit I on DQ6.
Fig. 12 shows the toggle bit algorithm. Fig. 25 in the
“AC Characteristics” section shows the toggle bit
timing diagrams. Fig. 26 shows the differences
between DQ2 and DQ6 in graphical form. See also
the subsection on DQ2 : (Toggle Bit II).
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5
Figure 11. Data# Polling Algorithm
Toggling on the Protected Sectors
RY/BY# ( READY/BUSY# )
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 1.8us, then returns to reading
array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that
are protected. If a program address falls within a
protected sector, DQ6 toggles for approximately
250ns after the program command sequence is written, then returns to reading array data.
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is
in progress or complete. The RY/BY# status is valid
after the rising edge of the final WE# pulse in the
command sequence. Since RY/BY# is an opendrain output, several RY/BY# pins can be tied
together in parallel with a pull-up resistor to Vcc. If
the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the
standby mode, or in the erase-suspend-read mode.
Table 10 shows the outputs for RY/BY#.
DQ2 ( TOGGLE BIT II )
The “Toggle Bit II” on DQ2, when used with DQ6,
indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in
progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of
the final WE# pulse in the command sequence DQ2
DQ6 ( TOGGLE BIT I )
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or
complete, or whether the device has entered the
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toggles when the system reads at addresses within
those sectors that have been selected for erasure.
(The system may use either OE# or CE# to control
the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erasesuspended. DQ6, by comparison, indicates
whether the device is actively erasing, or is in Erase
Suspend, but cannot distinguish which sectors are
selected for erasure. Thus, both status bits are
required for sector and mode information. Refer to
Table 10 to compare outputs for DQ2 and DQ6. Fig.
12 shows the toggle bit algorithm in flowchart form,
and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection. Fig. 25 shows the toggle bit timing diagram.
Fig. 26 shows how differently DQ2 operates compared with DQ6.
START
Read DQ7-DQ0
Read DQ7-DQ0
Toggle Bit
= Toggle ?
Yes
No
DQ5 = 1 ?
Yes
Read DQ7-DQ0
Twice
Reading Toggle Bits DQ6/DQ2
Toggle Bit
= Toggle ?
Refer to Fig. 12 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7-DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically, the system would note and store the value of
the toggle bit after the first read. After the second
read, the system would compare the new value of
the toggle bit with the first. If the toggle bit is not
toggling, the device has completed the program or
erase operation. The system can read array data
on DQ7-DQ0 on the following read cycle. However,
if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system
also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no
longer toggling, the device has successfully completed the program or erase operation. If it is still
toggling, the device did not completed the operation
successfully, and the system must write the reset
command to return to reading array data. The
remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read
cycles, determining the status as described in the
previous paragraph. Alternatively, it may choose to
perform other system tasks. In this case, this system must start at the beginning of the algorithm
when it returns to determine the status of the operation (top of Fig. 12).
ES29LV320D
No
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation
Complete
Note:
The system should recheck the toggle bit even if DQ5 = “1”
because the toggle bit may stop toggling as DQ5 changes to “1”.
See the subsections on DQ6 and DQ2 for more information.
Figure 12. Toggle Bit Algorithm
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If additional sectors are selected for erasure, the
entire time-out also applies after each additional
sector erase command. When the time-out period is
complete, DQ3 switches from a “0” to a”1”. If the
time between additional sector erase commands
from the system can be assumed to be less than
50us, the system need not monitor DQ3. See also
the Sector Erase Command Sequence section. After
the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or
DQ6 (Toggle Bit I) to ensure that the device has
accepted the command sequence, and then read
DQ3. If DQ3 is “1”, the Embedded Erase algorithm
has begun; all further commands (except Erase Suspend) are ignored until the erasure operation is complete. If DQ3 is “0”, the device will accept additional
sector erase commands. To ensure the command
has been accepted, the system software should
check the status of DQ3 prior to and following each
subsequent sector erase command. If DQ3 is high
on the second status check, the last command might
not have been accepted. In Table 10, DQ3 status
operation is well defined and summarized with other
status bits, DQ7, DQ6, DQ5, and DQ2.
DQ5 ( EXCEEDED TIMING LIMITS )
DQ5 indicates whether the program or erase time
has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1”, indicating that the program or erase cycle was not successfully completed. The device may output a “1”
on DQ5 if the system tries to program a “1” to a
location that was previously programmed to “0”
Only an erase operation can change a “0” back to a
“1”. Under this condition, the device halts the operation, and when the timing limit has been exceeded,
DQ5 produces a ”1”. Under both these conditions,
the system must write the reset command to return
to the read mode.
DQ3 ( SECTOR ERASE TIMER )
After writing a sector erase command sequence,
the system may read DQ3 to determine whether or
not erasure has begun. (The sector erase time
does not apply to the chip erase command.)
Table 10. Write Operation Status
DQ7
(Note 2)
Status
Standard
Mode
Erase Suspend Mode
Embedded Program Algorithm
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/
BY#
DQ7#
Toggle
0
N/A
No toggle
0
0
Toggle
0
1
Toggle
0
Erase Suspended
Sector
1
No toggle
0
N/A
Toggle
1
Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Embedded Erase Algorithm
Erase-SuspendRead
DQ6
Erase-Suspend-Program
Notes :
1. DQ5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the
section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
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ABSOLUTE MAXIMUM RATINGS
20ns
Storage Temperature
20ns
+0.8V
Plastic Packages ..............................................-65oC to +150oC
Vss-0.5V
Ambient Temperature
with Power Applied ...........................................-65oC to +125oC
Vss-2.0V
Voltage with Respect to Ground
20ns
Vcc (Note 1) ..........................................................-0.5V to +4.0V
A9, OE#, RESET# and WP#/ACC (Note 2) ......-0.5V to +12.5V
All other pins (Note 1) ...................................-0.5V to Vcc + 0.5V
Negative Overshoot
Output Short Circuit Current (Note 3) ................. 200 mA
20ns
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage
transitions, input or I/O pins may overshoot Vss to -2.0V for periods of up to 20ns. Maximum DC voltage on input or I/O pins is
Vcc+0.5V. See Fig. 13. During voltage transition, input or I/O pins
may overshoot to Vcc+2.0V for periods up to 20ns. See Fig. 13.
20ns
Vcc+2.0V
Vcc+0.5V
2.0V
2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#
/ACC is -0.5V. During voltage transitions, A9, OE#, WP#/ACC,
and RESET# may overshoot Vss to -2.0V for periods of up to
20ns. See Fig. 13. Maximum DC input voltage on pin A9 is +12.5V
which may overshoot to +14.0V for periods up to 20ns. Maximum
DC input voltage on WP#/ACC is +9.5V which may overshoot to
+12.0V for periods up to 20ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
20ns
Positive Overshoot
Figure 13. Maximum Overshoot Waveform
Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA).................................-40oC to +85oC
Commercial Devices
Ambient Temperature (TA)....................................0oC to +70oC
Vcc Supply Voltages
Vcc for all devices ............................................2.7V to 3.6V
Vcc for regulated voltage range .....................3.0V to 3.6V
Operating ranges define those limits between which the functionality of the device is guaranteed.
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DC CHARACTERISTICS
Table 11. CMOS Compatible
Parameter
Symbol
Parameter Description
ILI
Input Load Current
ILIT
A9 Input Load Current
ILR
RESET# Input Load Current
ILO
Output Leakage Current
ICCI
Vcc Active Read Current
(Notes 1,2)
Test Conditions
Min
Typ
Max
Unit
+ 3.0
uA
Vcc=Vcc max; A9=12.5V
35
uA
Vcc=Vcc max; RESET#=12.5V
35
uA
+ 1.0
uA
VIN=Vss to Vcc
Vcc=Vcc max
Vout=Vss to Vcc,
Vcc=Vcc max
5MHz
10
16
1MHz
2
4
5MHz
10
16
1MHz
2
4
CE#=VIL, OE#=VIH, WE#=VIL
15
30
mA
CE#, RESET#= Vcc+0.3V
0.2
10
uA
RESET#=Vss + 0.3V
0.2
10
uA
VIH = Vcc + 0.3V
VIL = Vss + 0.3V
0.2
10
uA
CE#=VIL OE#=VIH, Byte
mode
mA
CE#=VIL, OE#=VIH, Word
mode
ICC2
Vcc Active Write Current (Note 2,3)
ICC3
Vcc Standby Current (Note 2)
ICC4
Vcc Reset Current (Note 2)
ICC5
Automatic Sleep Mode
(Notes2,4)
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7xVcc
Vcc+0.3
V
VHH
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
Vcc = 3.0V + 10%
11.5
12.5
V
Vcc = 3.0V + 10%
11.5
12.5
V
0.45
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VOL
Output Low Voltage
VOH1
IOL = 4.0 mA, Vcc = Vcc min
IOH = -2.0mA, Vcc = Vcc min
0.85 Vcc
IOH = -100 uA, Vcc = Vcc min
Vcc - 0.4
V
Output High Voltage
VOH2
VLKO
Low Vcc Lock-Out Voltage (Note 5)
2.3
2.5
V
Notes:
1. The Icc current listed is typically less than 2 mA/MHz, with OE# at VIH , Typical condition : 25oC, Vcc = 3V
2. Maximum ICC specifications are tested with Vcc = Vcc max.
3. Icc active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
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DC CHARACTERISTICS
Zero-Power Flash
25
Supply Current in mA
Icc1 (Active Read current)
20
Icc5 (Automatic Sleep Mode)
15
10
5
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 14. Icc1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.6V
10
2.7V
Supply Current in mA
8
6
4
2
0
1
Note: T = 25oC
2
3
4
5
Frequency in MHz
Figure 15. Typical Icc1 vs. Frequency
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3.3V
Table 12. Test Specifications
2.7kΩ
Device
Under
Test
Test Condition
80R
Output Load
CL
6.2kΩ
90
1TTL gate
Output Load Capacitance, CL (including jig
capacitance)
30 pF
30 pF
Input Rise and Fall Times
100 pF
5 ns
Input Pulse Levels
Figure 16. Test Setup
120
0.0 - 3.0 V
Input timing measurement reference levels
1.5 V
Output timing measurement reference levels
1.5 V
Note: Diodes are IN3064 or equivalent
Key To Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0V
Input
1.5V
Measurement Level
1.5V Output
0.0V
Figure 17. Input Waveforms and Measurement Levels
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AC CHARACTERISTICS
Table 13. Read-Only Operations
Parameter
Speed Options
Description
JEDEC Std.
Test Setup
Unit
80R
90
120
Min
80
90
120
ns
tAVAV
tRC
Read Cycle Time(Note 1)
tAVQV
tACC
Address to Output Delay
CE#,OE#=VIL
Max
80
90
120
ns
tELQV
tCE
Chip Enable to Output Delay
OE#=VIL
Max
80
90
120
ns
tGLQV
tOE
Output Enable to Output Delay
Max
35
40
50
ns
tEHQZ
tDF
Chip Enable to Output High Z (Note 1)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
tOEH
Output Enable Hold
Time (Note 1)
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
Note : 1. Not 100% tested
tRC
Address
Address Stable
tACC
CE#
tRH
tDF
tRH
tOE
OE#
tOEH
WE#
tCE
tOH
High-Z
High-Z
OUTPUTS
Output Valid
RESET#
RY/BY#
0V
Figure 18. Read Operation Timings
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AC CHARACTERISTICS
Table 14. Hardware Reset ( RESET #)
Parameter
Description
JEDEC Std.
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms) to Read Mode
(See Note)
Max
20
us
tReady
RESET# Pin Low (Not During Embedded Algorithms) to Read
Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
us
tRB
RY/BY# Recovery Time
Min
0
ns
Note : Not 100% tested
RY/BY#
0V
CE#,OE#
tRH
RESET#
tRP
tREADY
(A) Not During Embedded Algorithm
tREADY
RY/BY#
tRB
CE#,OE#
RESET#
tRP
(B) During Embedded Algorithm
Figure 19. Reset Timings
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AC CHARACTERISTICS
Table 15. Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Description
Std.
80R
90
120
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
5
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
30
ns
tFHQV
BYTE# Switching High to Output Active
Min
80
90
120
ns
CE#
OE#
BYTE#
tELFL
BYTE# Switching
Switching from
word to byte mode
Data Output
(DQ0-DQ14)
DQ0-DQ14
DQ15
Output
DQ15/A-1
Data Output
(DQ0-DQ7)
Address Input
tFLQZ
tELFH
BYTE#
BYTE# Switching
Switching from
byte to word mode
Data Output
(DQ0-DQ7)
DQ0-DQ14
DQ15/A-1
Address Input
Data Output
(DQ0-DQ14)
DQ15
Output
tFHQV
Figure 20. BYTE# Timing for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD
(tAH)
Note : Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 21. BYTE# Timing for Write Operations
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AC CHARACTERISTICS
Table 16. Erase and Program Operations
Parameter
Description
80R
90
120
Unit
80
90
120
ns
JEDEC
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
Byte
Typ
9
tWHWH1
tWHWH1
Programming Operation (Note 2)
Word
Typ
11
tWHWH1
tWHWH1
Accelerated Programming Operation, Word or Byte (Note 2)
Typ
8
us
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
Vcc Setup Time (Note 1)
Min
50
us
tRB
Write Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tWLAX
45
45
50
0
45
35
45
ns
50
35
ns
50
ns
ns
us
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
ES29LV320D
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AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tWC
tAS
555h
Address
Read Status Data(last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tCS tWP
tWHWH1
WE#
tWPH
tDS tDH
A0h
DATA
PD
Status
tBUSY
RY/BY#
Dout
tRB
tVCS
Vcc
NOTES :
1. PA = program address, PD = program data, Dout is the true data at the program address.
2. Illustration shows device in word mode.
Figure 22. Program Operation Timings
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AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tWC
Address
tAS
2AAh
Read Status Data
tAH
VA
SA
VA
555h for chip erase
CE#
tCH
OE#
tCS tWP
tWHWH2
WE#
tWPH
tDS tDH
10h for chip erase
55h
DATA
30h
In
Progress
tBUSY
RY/BY#
Complete
tRB
tVCS
Vcc
NOTES :
1. SA = sector address(for Sector Erase), VA = valid address for reading status data(see “Write Operation Status”).
2. These waveforms are for the word mode.
Figure 23. Chip/Sector Erase Operation Timings
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AC CHARACTERISTICS
tRC
Address
VA
VA
tACC
VA
tCE
CE#
tCH
tOE
OE#
tOEH
WE#
tDF
tOH
HIGH-Z
DQ7
Complement
Complement
DQ0-DQ6
Status Data
Status Data
True
Valid Data
HIGH-Z
True
Valid Data
tBUSY
RY/BY#
NOTE : VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle
Figure 24. Data# Polling Timings (During Embedded Algorithms)
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AC CHARACTERISTICS
tAHT
tAS
Address
tASO
tAHT
CE#
tOEH
tCEPH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
Valid Data
tOE
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
NOTE : VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 25. Toggle Bit Timings (During Embedded Algorithms)
Enter
Embedded
Erasing
Enter Erase
Suspend
Program
Enter
Suspend
Erase
Resume
WE#
Erase
Erase
Suspend
Read
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
NOTE : DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 26. DQ2 vs. DQ6
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AC CHARACTERISTICS
Table 17. Temporary Sector Unprotect
Parameter
JEDEC
Description
Std.
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector Unprotect
Min
4
us
tRRB
RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect
Min
4
us
Note: Not 100% tested.
VID
RESET#
Vss,VIL,
or VIH
tVIDR
Program or Erase Command Sequence
tVIDR
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 27. Temporary Sector Unprotect Timing Diagram
VHH
WP#/ACC
VIL or VIH
VIL
or VIH
tVHH
tVHH
Figure 28. Accelerated Program Timing Diagram
ES29LV320D
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AC CHARACTERISTICS
VID
VIH
RESET#
SA,A6,
A1,A0
Valid*
Valid*
Verify
Sector/Sector Group Protect or Unprotect
DQ
60h
1us
Valid*
60h
40h
Status
Sector/Sector Group Protect : 150us,
Sector/Sector Group Unprotect: 15ms
CE#
WE#
OE#
* For sector protect, A6=0,A1=1,A0=0 For sector unprotect, A6=1,A1=1,A0=0
Figure 29. Sector/Sector Group Protect & Unprotect Timing Diagram
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AC CHARACTERISTICS
Table 18. Alternate CE# Controlled Erase and Program Operations
Parameter
Description
80R
90
120
Unit
80
90
120
ns
JEDEC
Std.
tAVAV
tWC
Write Cycle Time( Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
45
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tELEL
tCPH
CE# Pulse Width High
Min
30
Byte
Typ
9
tWHWH1
tWHWH1
Programming Operation (Note 2)
Word
Typ
11
tWHWH1
tWHWH1
Accelerated Programming Operation, Word or Byte (Note 2)
Typ
8
us
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
0
45
45
ns
50
ns
ns
us
Notes :
1. Not 100% tested
2. See the “Erase And Programming Performance” section for more information.
ES29LV320D
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AC CHARACTERISTICS
555 for program
2AA for erase
PD for program
SA for sector erase
555 for chip erase
Data Polling
Address
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tDS
tCPH
tBUSY
tDH
DATA
DQ7#
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
NOTES :
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data
3. DQ7# is the complement of the data written to the device. Dout is the data written to the device.
4. Waveforms are for the word mode.
Figure 30. Alternate CE# Controlled
Write(Erase/Program) Operation Timings
ES29LV320D
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Table 19. AC CHARACTERISTICS
Parameter
Description
tOE
Value
Unit
Output Enable to Output Delay
Max
35/40/50
ns
tVIDR
Voltage Transition Time
Min
500
ns
tWPP1
Write Pulse Width for Protection Operation
Min
150
us
tWPP2
Write Pulse Width for Unprotection Operation
Min
15
ms
tOESP
OE# Setup Time to WE# Active
Min
4
us
tCSP
CE# Setup Time to WE# Active
Min
4
us
Voltage Setup Time
Min
4
us
tST
A<20:12>
SAy
SAx
A<0>
A<1>
A<6>
tVIDR
VID
A<9>
tVIDR
tST
VID
OE#
tOESP
tWPP1
WE#
tST
tCSP
tOE
CE#
DQ
0x01
RESET#
Vcc
Figure 31. Sector Protection timings (A9 High-Voltage Method)
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AC CHARACTERISTICS
A<20:12>
SA1
SA0
A<0>
A<1>
A<6>
tVIDR
VID
A<9>
tVIDR
tST
VID
OE#
tOESP
tWPP2
WE#
tST
tOE
tCSP
CE#
DQ
0x00
RESET#
Vcc
NOTE : It is recommended to verify for all sectors.
Figure 32. Sector Unprotection timings (A9 High-Voltage Method)
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Table 20. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Sector Erase Time
0.7
Chip Erase Time
112
Max (Note 2)
15
Unit
sec
sec
Byte Program Time
9
300
us
Accelerated Byte/Word Program Time
8
210
us
Word Program Time
11
360
us
Byte Mode
36
108
Word Mode
24
72
Chip Program Time (Note 3)
Comments
Excludes 00h programming prior to
erasure (Note 4)
Exclude system level overhead (Note 5)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25oC, 3.0V Vcc, 10,000 cycles. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90oC, Vcc = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two-or-four-bus-cycle sequence for the program command. See
Table 9 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Table 21. LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins (including A9, OE#, and RESET#)
- 1.0V
12.5 V
Input voltage with respect to Vss on all I/O pins
- 1.0V
Vcc + 1.0 V
Vcc Current
- 100 mA
+100 mA
Note: Includes all pins except Vcc. Test conditions: Vcc = 3.0 V, one pin at a time
Table 22. TSOP AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
CIN
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
CIN2
Control Pin Capacitance
VIN = 0
Typ
Max
Unit
TSOP
6
7.5
pF
TSOP
8.5
12
pF
TSOP
7.5
9
pF
Notes:
1. Sampled, not 100% tested
2. Test conditions TA = 25oC, f=1.0MHz.
Table 23. DATA RETENTION
Parameter Description
Test conditions
Min
Unit
150oC
10
Years
125oC
20
Years
Minimum Pattern Data Retention Time
ES29LV320D
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PHYSICAL DIMENSIONS
48-Pin Standard TSOP (measured in millimeters)
0.10 C
2
A2
1
N
SEE DETAIL B
-B-
-AE 5
e
9
N
---- + 1
N
----
2
2
5
4
D1
D
A1
-CSEATING
PLANE
B
0.08MM (0.0031”) M C A-B S
A
b
6 7
WITH
PLATING
B
SEE DETAIL A
7
(c)
c1
BASE
METAL
b1
R
c
SECTION B-B
GAUGE
PLANE
0.25MM
(0.0098”) BSC
θ°
PARALLEL TO
SEATING PLANE
L
e/2
-X-
DETAIL A
X = A OR B
DETAIL B
Package
TS 48
JEDEC
MO-142 (B) DD
NOTES:
Symbol
MIN
NOM
MAX
A
-
-
1.20
A1
0.05
-
0.15
A2
0.95
1.00
1.05
b1
0.17
0.20
0.23
b
0.17
0.22
0.27
c1
0.10
-
0.16
c
0.10
-
0.21
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
E
11.90
12.00
12.10
e
L
0.50 BASIC
0.50
θ
R
1. Controlling dimensions are in millimeters(mm). (Dimensioning
and tolerancing conforms to ANSI Y14.5M-1982)
2. Pin 1 identifier for standard pin out (Die up).
3. Pin 1 identifier for reverse pin out (Die down): Ink or Laser mark
4. To be determined at the seating plane. The seating plane is defined as the plane of contact that is made when the package leads are allowed to rest freely on a flat horizontal surface.
5. Dimension D1 and E do not include mold protrusion. Allowable
mold protrusion is 0.15mm (0.0059”) per side.
6. Dimension b does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.0031”) total in excess
of b dimension at max. material condition. Minimum space
between protrusion and an adjacent lead to be 0.07mm
(0.0028”).
7. These dimensions apply to the flat section of the lead between
0.10mm (0.0039”) and 0.25mm (0.0098”) from the lead tip.
8. Lead coplanarity shall be within 0.10mm (0.004”) as measured
from the seating plane.
9. Dimension “e” is measured at the centerline of the leads.
0.60
0°
0.08
N
ES29LV320D
3°
-
0.70
5°
0.20
48
53
Rev. 2D Jan 5, 2006
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ES29LV320D
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ORDERNG INFORMATION
Standard Products
ESI standard products are available in several package and operating ranges. The order number (Valid Combination) is formed by a combination of the following:
ES
29
LV
320 X
X - XX
X
X X X
TEMPERATURE RANGE
Blank : Commercial (0oC to + 70oC)
I
:
Industrial (- 40oC to + 85oC)
Pb-free
C
G
:
:
Pb product
Pb-free product
PACKAGE TYPE
T
W
:
:
Standard TSOP (48-pin)
FBGA (48-ball)
VOLTAGE RANGE
Blank : 2.7 ~ 3.6V
R
: 3.0 ~ 3.6V
SPEED OPTION
70 : 70ns
80 : 80ns
90 : 90ns
12 : 120ns
SECTOR ARCHITECTURE
Blank : Uniform sector
T
: Top sector
B
: Bottom sector
TECHNOLOGY
D : 0.18um
E : 0.15um
F : 0.13um
DENSITY & ORGANIZATION
400 : 4M ( x8 / x16)
160 : 16M ( x8 / x16)
640 : 64M ( x8 / x16)
800 : 8M ( x8 / x16)
320 : 32M ( x8 / x16)
POWER SUPPLY AND INTERFACE
F
: 5.0V
LV : 3.0V
DL
: 3.0V, Dual Bank
DS : 1.8V, Dual Bank
BDS : 1.8V, Burst mode, Dual Bank
COMPONENT GROUP
29 : Flash Memory
EXCEL SEMICONDUCTOR
ES29LV320D
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Rev. 2D Jan 5, 2006
EE SS II
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Product Selection Guide
Industrial Device
Part No.
Speed Vcc
Boot Sector Package
Pb
ES29LV320DT-80RTGI
80ns
3.0 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV320DT-80RTCI
80ns
3.0 - 3.6V
Top
48-pin TSOP
-
ES29LV320DB-80RTGI
80ns
3.0 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV320DB-80RTCI
80ns
3.0 - 3.6V
Bottom
48-pin TSOP
-
ES29LV320DT-90TGI
90ns
2.7 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV320DT-90TCI
90ns
2.7 - 3.6V
Top
48-pin TSOP
-
ES29LV320DB-90TGI
90ns
2.7 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV320DB-90TCI
90ns
2.7 - 3.6V
Bottom
48-pin TSOP
-
ES29LV320DT-12TGI
120ns
2.7 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV320DT-12TCI
120ns
2.7 - 3.6V
Top
48-pin TSOP
-
ES29LV320DB-12TGI
120ns
2.7 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV320DB-12TCI
120ns
2.7 - 3.6V
Bottom
48-pin TSOP
-
ES29LV320D
56
Ball Pitch/Size
Body Size
Rev. 2D Jan 5, 2006
EE SS II
Excel Semiconductor inc.
Product Selection Guide
Commercial Device
Part No.
Speed Vcc
Boot Sector Package
Pb
ES29LV320DT-80RTG
80ns
3.0 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV320DT-80RTC
80ns
3.0 - 3.6V
Top
48-pin TSOP
-
ES29LV320DB-80RTG
80ns
3.0 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV320DB-80RTC
80ns
3.0 - 3.6V
Bottom
48-pin TSOP
-
ES29LV320DT-90TG
90ns
2.7 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV320DT-90TC
90ns
2.7 - 3.6V
Top
48-pin TSOP
-
ES29LV320DB-90TG
90ns
2.7 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV320DB-90TC
90ns
2.7 - 3.6V
Bottom
48-pin TSOP
-
ES29LV320DT-12TG
120ns
2.7 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV320DT-12TC
120ns
2.7 - 3.6V
Top
48-pin TSOP
-
ES29LV320DB-12TG
120ns
2.7 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV320DB-12TC
120ns
2.7 - 3.6V
Bottom
48-pin TSOP
-
ES29LV320D
57
Ball Pitch/Size
Body Size
Rev. 2D Jan 5, 2006
EE SS II
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Document Title
32M Flash Memory
Revision History
Revision Number
Rev. 0A
Data
Nov. 10, 2003
Items
Initial Release Version.
1. The typical program/erase current value changed from 30mA to
15mA.
Rev. 0B
Nov. 26, 2003
2. The Table 6 for manufacture ID is changed to 4Ah.
3. The extended temperature range is removed and the commercial temperature range is added.
Rev. 0C
Feb. 4, 2004
1. E/W cycle number is changed from 1,000,000 to 100,000.
2. CFI code is changed : 45h : 04h ----> 45h : 00h
1. The format of datasheet is entirely changed and updated
2. 70ns product is removed
3. 80R product ( 80ns : Vcc = 3.0 ~ 3.6V) is newly added.
4. A command diagram is added.
5. Sector protection / unprotection algorithm by A9 high-voltage
Rev. 1A
Mar. 1, 2004
method is described.
6. A limitation to the maximum number of E/W cycles in the Security Sector is described (300 E/W cycles at Max.).
7. A product selection table is added.
8. Test condtions for the typical performance of program/erase :
after 100,000 E/W cycles ----> after 10,000 E/W cycles
1. The bias condition of RESET# in Table 1 for A9 high-Voltage is
Rev. 1B
Apr. 23, 2004
changed from VID to H.
2. The bias condition of A9 in Table 1 for A9 high-Voltage method
is added.
ES29LV320D
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Rev. 2D Jan 5, 2006
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Document Title
32M Flash Memory
Revision History
Revision Number
Data
Items
1. The preliminary is removed from the datasheet.
2. The Icc3 (max) is changed from 5uA to 10uA.
3. The Icc4 (max) is changed from 5uA to 10uA.
4. The Icc5 (max) is changed from 5uA to 10uA.
Rev. 2A
Dec. 1, 2004
5. The size of FBGA is changed from 8mm x 9mm to 7mm x 8mm.
6. The overall thickness of FBGA , A (max), is changed from 1.20
to 1.10. Therefore, ball height (A1) and body thickness (A2)
also is changed accordingly.
7. The ball diameter of FBGA, b(min), b(nom), b(max), is changed
from 0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40 respectively.
1. The arrow from Erase Suspend Read to Read is changed to
Rev. 2B
Dec. 13, 2004
Sector Erase.
2. VLKO(min), 2.3V is added
Rev. 2C
Apr. 1, 2005
1. Remove FBGA Package Type.
Rev. 2D
Jan. 5, 2005
1. Add RoHS-Compliant Package Option.
Excel Semiconductor Inc.
1010 Keumkang Hightech Valley, Sangdaewon1-Dong 133-1, Jungwon-Gu, Seongnam-Si, Kyongki-Do, Rep.
of Korea. Zip Code : 462-807 Tel : +82-31-777-5060 Fax : +82-31-740-3798 / Homepage : www.excelsemi.com
The attached datasheets are provided by Excel Semiconductor.inc (ESI). ESI reserves the right to change the specifications and products. ESI will answer to your questions about device. If you have any questions, please contact the
ESI office.
ES29LV320D
59
Rev. 2D Jan 5, 2006