100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on / off conditions need to be set for operation, making the device design easy. Structure NPN epitaxial planar silicon transistor (Resistor built-in type) Dimensions (Unit : mm) 0.7 1.6 DTC123JE 0.55 0.3 0.2 1.2 0.32 (3) 0.8 0.8 1.2 0.2 (1)(2) 0.4 0.4 (2) 0.13 (1) IN (2) GND (3) OUT 0.5 0.8 DTC123JUA 2.0 1.1 0.4 0.8 (3) 1.6 2.8 2.1 1.25 (3) (1) 0.1Min. (2) Each lead has same dimensions 2.9 0.7 0.2 0.3 (1) GND (2) IN (3) OUT Abbreviated symbol : E42 DTC123JKA 0.9 0.15 1.0 ROHM : EMT3 Abbreviated symbol : E42 0.65 0.65 0.15 1.3 ROHM : UMT3 EIAJ : SC-70 0.2 0.5 0.5 Each lead has same dimensions ROHM : VMT3 (1) 0.2 (2) (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : 142 (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 Packaging specifications 0.3Min. 0.22 0.1Min. (3) 1.6 DTC123JM (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : E42 Inner circuit Package VMT3 EMT3 UMT3 SMT3 Packaging type Taping Taping Taping Taping Code T2L TL T106 T146 Basic ordering unit (pieces) 8000 3000 3000 3000 − − − − − OUT R1 IN R2 Part No. DTC123JM DTC123JE − DTC123JUA − − DTC123JKA − − GND OUT IN − GND − R1=2.2kΩ, R2=47kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.C DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Data Sheet Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit DTC123JM DTC123JE DTC123JUA DTC123JKA Supply voltage VCC 50 V Input voltage VIN −5 to +12 V IO 100 IC(Max.) 100 Output current mA Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 200 mW Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 1.1 − − VO(on) − 0.1 0.3 V II − − 3.6 mA VI=5V IO(off) − − 0.5 μA VCC=50V, VI=0V GI 80 − − − VO=5V, IO=10mA Input resistance R1 1.54 2.2 2.86 kΩ Resistance ratio R2/R1 17 21 26 − fT ∗ − 250 − MHz Input voltage Output voltage Input current Output current DC current gain Transition frequency Unit Conditions VCC=5V, IO=100μA V VO=0.3V, IO=5mA IO/II=5mA/0.25mA − − VCE=10V, IE= −5mA, f=100MHz ∗Characteristics of built-in transistor Electrical characteristic curves 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V VO=5V 500 Ta=100°C 25°C −40°C 2m DC CURRENT GAIN : GI 100 1m 500μ Ta=100°C 25°C −40°C 200μ 100μ 50μ 20μ 10μ 5μ 200 100 50 20 10 5 2 2μ 1μ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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